TWI739024B - 電漿處理裝置 - Google Patents
電漿處理裝置 Download PDFInfo
- Publication number
- TWI739024B TWI739024B TW107127210A TW107127210A TWI739024B TW I739024 B TWI739024 B TW I739024B TW 107127210 A TW107127210 A TW 107127210A TW 107127210 A TW107127210 A TW 107127210A TW I739024 B TWI739024 B TW I739024B
- Authority
- TW
- Taiwan
- Prior art keywords
- processing
- plasma
- plasma processing
- data
- prediction model
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 213
- 238000004020 luminiscence type Methods 0.000 claims abstract description 24
- 238000004458 analytical method Methods 0.000 claims description 53
- 238000012544 monitoring process Methods 0.000 claims description 27
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 15
- 238000003860 storage Methods 0.000 abstract description 7
- 235000012431 wafers Nutrition 0.000 description 33
- 238000010586 diagram Methods 0.000 description 12
- 238000004364 calculation method Methods 0.000 description 8
- 238000009832 plasma treatment Methods 0.000 description 8
- 238000004891 communication Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 238000001636 atomic emission spectroscopy Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000010238 partial least squares regression Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32926—Software, data control or modelling
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/443—Emission spectrometry
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B19/00—Programme-control systems
- G05B19/02—Programme-control systems electric
- G05B19/418—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
- G05B19/41875—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM] characterised by quality surveillance of production
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32972—Spectral analysis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/20—Pc systems
- G05B2219/26—Pc applications
- G05B2219/2602—Wafer processing
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Engineering & Computer Science (AREA)
- Quality & Reliability (AREA)
- Automation & Control Theory (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-005761 | 2018-01-17 | ||
| JP2018005761A JP7058129B2 (ja) | 2018-01-17 | 2018-01-17 | プラズマ処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201933418A TW201933418A (zh) | 2019-08-16 |
| TWI739024B true TWI739024B (zh) | 2021-09-11 |
Family
ID=67214239
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107127210A TWI739024B (zh) | 2018-01-17 | 2018-08-06 | 電漿處理裝置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US11289313B2 (enExample) |
| JP (1) | JP7058129B2 (enExample) |
| KR (1) | KR102100210B1 (enExample) |
| TW (1) | TWI739024B (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11966203B2 (en) | 2019-08-21 | 2024-04-23 | Kla Corporation | System and method to adjust a kinetics model of surface reactions during plasma processing |
| JP7542417B2 (ja) | 2019-12-27 | 2024-08-30 | 株式会社Screenホールディングス | 基板処理装置、基板処理方法、基板処理システム、及び学習用データの生成方法 |
| JP7429623B2 (ja) * | 2020-08-31 | 2024-02-08 | 株式会社日立製作所 | 製造条件設定自動化装置及び方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8992721B2 (en) * | 2009-10-09 | 2015-03-31 | Hitachi High-Technologies Corporation | Plasma processing apparatus |
| TW201515095A (zh) * | 2013-10-04 | 2015-04-16 | Applied Materials Inc | 匹配兩電漿反應器之預測方法 |
| US20160379896A1 (en) * | 2015-06-26 | 2016-12-29 | Hitachi High-Technologies Corporation | Plasma processing apparatus and data analysis apparatus |
| TW201724157A (zh) * | 2015-06-12 | 2017-07-01 | Tokyo Electron Ltd | 電漿處理裝置、電漿處理裝置之控制方法及記憶媒體 |
| TW201742101A (zh) * | 2016-03-03 | 2017-12-01 | 蘭姆研究公司 | 使用一或多夾具及效率決定匹配網路模型之參數的系統及方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4317701B2 (ja) * | 2003-03-12 | 2009-08-19 | 東京エレクトロン株式会社 | 処理結果の予測方法及び予測装置 |
| JP2004335841A (ja) * | 2003-05-09 | 2004-11-25 | Tokyo Electron Ltd | プラズマ処理装置の予測装置及び予測方法 |
| JP2005051269A (ja) * | 2004-10-12 | 2005-02-24 | Hitachi Ltd | 半導体処理装置 |
| WO2007066404A1 (ja) * | 2005-12-08 | 2007-06-14 | Spansion Llc | 半導体製造装置、その制御システムおよびその制御方法 |
| JP2009049382A (ja) | 2007-07-26 | 2009-03-05 | Panasonic Corp | ドライエッチング方法およびドライエッチング装置 |
| JP4836994B2 (ja) * | 2008-06-11 | 2011-12-14 | 株式会社日立製作所 | 半導体処理装置 |
| JP6220319B2 (ja) | 2014-07-17 | 2017-10-25 | 株式会社日立ハイテクノロジーズ | データ解析方法及びプラズマエッチング方法並びにプラズマ処理装置 |
| JP6310866B2 (ja) * | 2015-01-30 | 2018-04-11 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法並びに解析方法 |
-
2018
- 2018-01-17 JP JP2018005761A patent/JP7058129B2/ja active Active
- 2018-07-19 KR KR1020180083797A patent/KR102100210B1/ko active Active
- 2018-08-06 TW TW107127210A patent/TWI739024B/zh active
- 2018-09-06 US US16/123,208 patent/US11289313B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8992721B2 (en) * | 2009-10-09 | 2015-03-31 | Hitachi High-Technologies Corporation | Plasma processing apparatus |
| TW201515095A (zh) * | 2013-10-04 | 2015-04-16 | Applied Materials Inc | 匹配兩電漿反應器之預測方法 |
| TW201724157A (zh) * | 2015-06-12 | 2017-07-01 | Tokyo Electron Ltd | 電漿處理裝置、電漿處理裝置之控制方法及記憶媒體 |
| US20160379896A1 (en) * | 2015-06-26 | 2016-12-29 | Hitachi High-Technologies Corporation | Plasma processing apparatus and data analysis apparatus |
| TW201742101A (zh) * | 2016-03-03 | 2017-12-01 | 蘭姆研究公司 | 使用一或多夾具及效率決定匹配網路模型之參數的系統及方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20190087940A (ko) | 2019-07-25 |
| US11289313B2 (en) | 2022-03-29 |
| JP2019125506A (ja) | 2019-07-25 |
| JP7058129B2 (ja) | 2022-04-21 |
| KR102100210B1 (ko) | 2020-04-14 |
| US20190221407A1 (en) | 2019-07-18 |
| TW201933418A (zh) | 2019-08-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US12014909B2 (en) | Plasma processing apparatus and plasma processing system | |
| KR101571928B1 (ko) | 분석 방법, 분석 장치 및 에칭 처리 시스템 | |
| CN112805635B (zh) | 先进半导体工艺优化和制造期间的自适应控制 | |
| US11538671B2 (en) | Plasma processing apparatus and data analysis apparatus | |
| US8437870B2 (en) | System and method for implementing a virtual metrology advanced process control platform | |
| TWI546638B (zh) | 電漿處理裝置及電漿處理方法以及解析方法 | |
| EP3819930A1 (en) | Manufacturing process determination device for substrate processing device, substrate processing system, manufacturing process determination device for substrate processing device, group of learning models, method for generating group of learning models, and program | |
| US9443704B2 (en) | Data analysis method for plasma processing apparatus, plasma processing method and plasma processing apparatus | |
| TWI739024B (zh) | 電漿處理裝置 | |
| TW201003812A (en) | Etching process state judgment method and system therefor | |
| TW201404247A (zh) | 電漿處理裝置 | |
| JP6173851B2 (ja) | 分析方法およびプラズマエッチング装置 | |
| KR101887383B1 (ko) | 플라스마 처리 장치 및 플라스마 처리 데이터를 해석하는 해석 방법 | |
| JP5596832B2 (ja) | プラズマ処理方法のRun−to−Run制御方法 |