JP7045884B2 - 半導体受光素子、光受信モジュール、光モジュール、及び光伝送装置 - Google Patents
半導体受光素子、光受信モジュール、光モジュール、及び光伝送装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 182
- 230000003287 optical effect Effects 0.000 title claims description 120
- 230000005540 biological transmission Effects 0.000 title claims description 35
- 238000010521 absorption reaction Methods 0.000 claims description 128
- 230000005684 electric field Effects 0.000 claims description 14
- 230000031700 light absorption Effects 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 11
- 230000007935 neutral effect Effects 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims 1
- 238000004364 calculation method Methods 0.000 description 19
- 239000000758 substrate Substances 0.000 description 16
- 239000013307 optical fiber Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 230000035945 sensitivity Effects 0.000 description 8
- 230000007423 decrease Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
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- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
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- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
- H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
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- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
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- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
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- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
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- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
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- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4215—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical elements being wavelength selective optical elements, e.g. variable wavelength optical modules or wavelength lockers
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- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
Description
図1は、本発明の第1の実施形態に係る光伝送装置1及び光モジュール2の構成を示す模式図である。光伝送装置1は、プリント回路基板11とIC12を備えている。光伝送装置1は、例えば、大容量のルータやスイッチである。光伝送装置1は、例えば交換機の機能を有しており、基地局などに配置される。光伝送装置1に、複数の光モジュール2が搭載されており、光モジュール2より受信用のデータ(受信用の電気信号)を取得し、IC12などを用いて、どこへ何のデータを送信するかを判断し、送信用のデータ(送信用の電気信号)を生成し、プリント回路基板11を介して、該当する光モジュール2へそのデータを伝達する。
図6は、本発明の第2の実施形態に係るフォトダイオード230の概略図である。当該実施形態に係るフォトダイオード230は裏面入射型の半導体受光素子であり、図6はその構成を模式的に示す断面図である。当該実施形態に係るフォトダイオード230は、半導体多層構造に、第1半導体吸収層(アンドープInGaAs吸収層211)とn型半導体コンタクト層(n型InPコンタクト層214)との間に配置されるアンドープInAlGaAs電子走行層238がさらに含まれる点で第1の実施形態と異なっているが、それ以外は第1の実施形態と同じ構造をしている。
Claims (8)
- p型電極と、
前記p型電極に接続するp型半導体コンタクト層と、
n型電極と、
前記n型電極に接続するn型半導体コンタクト層と、
前記p型半導体コンタクト層と前記n型半導体コンタクト層との間に配置される、光吸収層と、
を備える、半導体受光素子であって、
前記光吸収層は、
前記n型半導体コンタクト層に接し、厚さWdを有する第1半導体吸収層と、
前記第1半導体吸収層に接し、前記p型半導体コンタクト層に接し、厚さWpを有しp型にドープされる第2半導体吸収層と、
を含み、
前記第1半導体吸収層と前記第2半導体吸収層とは同一組成で構成され、
前記第1半導体吸収層は、入力される光を吸収するバンドギャップエネルギーを有し、
前記p型電極と前記n型電極との間に所定の逆バイアス電圧が印加される場合に、前記第1半導体吸収層は空乏化し、前記第2半導体吸収層は前記第1半導体吸収層との界面近傍領域を除いて電荷中立条件を保ち、
厚さWdと厚みWpとの関係が、0.6≦Wp/(Wp+Wd)≦0.82である、
ことを特徴とする、半導体受光素子。 - p型電極と、
前記p型電極に接続するp型半導体コンタクト層と、
n型電極と、
前記n型電極に接続するn型半導体コンタクト層と、
前記p型半導体コンタクト層と前記n型半導体コンタクト層との間に配置される、光吸収層と、
を備える、半導体受光素子であって、
前記光吸収層は、
前記n型半導体コンタクト層側に配置され、厚さWdを有する第1半導体吸収層と、
前記第1半導体吸収層と前記n型半導体コンタクト層との間に配置される、半導体電子走行層と、
前記第1半導体吸収層に接し、前記p型半導体コンタクト層側に配置され、厚さWpを有しp型にドープされる第2半導体吸収層と、
を含み、
前記第1半導体吸収層と前記第2半導体吸収層とは同一組成で構成され、
前記第1半導体吸収層は、入力される光を吸収するバンドギャップエネルギーを有し、
前記半導体電子走行層は、入力される光を吸収するバンドギャップエネルギーより大きく、光吸収層として機能しないバンドギャップエネルギーを有し、
前記p型電極と前記n型電極との間に所定の逆バイアス電圧が印加される場合に、前記第1半導体吸収層は空乏化し、前記半導体電子走行層は空乏化し、前記第2半導体吸収層は前記第1半導体吸収層との界面近傍領域を除いて電荷中立条件を保ち、
厚さWdと厚みWpとの関係が、0.7≦Wp/(Wp+Wd)≦0.88である、
ことを特徴とする、半導体受光素子。 - 請求項2に記載の半導体受光素子であって、
前記第1半導体吸収層と前記半導体電子走行層との間に配置され、前記第1半導体吸収層のドーピング濃度及び前記半導体電子走行層のドーピング濃度のいずれよりも高いドーピング濃度の不純物が添加される半導体電界調整層を、
さらに備える、半導体受光素子。 - 請求項1乃至3のいずれかに記載の半導体受光素子であって、
III-V族化合物半導体で構成される半導体多層構造を有する、
ことを特徴とする、半導体受光素子。 - 請求項1乃至3のいずれかに記載の半導体受光素子であって、
前記第1半導体吸収層及び前記第2半導体吸収層がともに、InGaAs、InGaAsP、InAlGaAsからなる群より選択される1の組成によって構成される、
ことを特徴とする、半導体受光素子。 - 請求項1乃至5のいずれかに記載の半導体受光素子、を備える、光受信モジュール。
- 請求項6に記載の光受信モジュールと、
光送信モジュールと、
を備える、光モジュール。 - 請求項7に記載の光モジュールが搭載される、光伝送装置。
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JP2018042679A JP7045884B2 (ja) | 2018-03-09 | 2018-03-09 | 半導体受光素子、光受信モジュール、光モジュール、及び光伝送装置 |
US16/296,492 US10978605B2 (en) | 2018-03-09 | 2019-03-08 | Semiconductor photodiode, optical receiver module, optical module, and optical transmission equipment |
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US11476382B2 (en) | 2021-01-26 | 2022-10-18 | Lumentum Japan, Inc. | Semiconductor light-receiving element |
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US20220246781A1 (en) * | 2021-02-04 | 2022-08-04 | Mellanox Technologies, Ltd. | High modulation speed pin-type photodiode |
CN114864730A (zh) * | 2021-02-04 | 2022-08-05 | 迈络思科技有限公司 | 高调制速度pin型光电二极管 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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WO1997048137A1 (fr) | 1996-06-13 | 1997-12-18 | The Furukawa Electric Co., Ltd. | Photodetecteur de type guide d'ondes a semi-conducteur et procede de fabrication de ce dernier |
JP2003174184A (ja) | 2001-12-04 | 2003-06-20 | Ntt Electornics Corp | フォトダイオード |
JP2005223022A (ja) | 2004-02-03 | 2005-08-18 | Ntt Electornics Corp | アバランシ・フォトダイオード |
JP2011176094A (ja) | 2010-02-24 | 2011-09-08 | Nippon Telegr & Teleph Corp <Ntt> | フォトダイオード |
JP2013008719A (ja) | 2011-06-22 | 2013-01-10 | Nippon Telegr & Teleph Corp <Ntt> | 半導体受光素子 |
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US6740908B1 (en) * | 2003-03-18 | 2004-05-25 | Agilent Technologies, Inc. | Extended drift heterostructure photodiode having enhanced electron response |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997048137A1 (fr) | 1996-06-13 | 1997-12-18 | The Furukawa Electric Co., Ltd. | Photodetecteur de type guide d'ondes a semi-conducteur et procede de fabrication de ce dernier |
JP2003174184A (ja) | 2001-12-04 | 2003-06-20 | Ntt Electornics Corp | フォトダイオード |
JP2005223022A (ja) | 2004-02-03 | 2005-08-18 | Ntt Electornics Corp | アバランシ・フォトダイオード |
JP2011176094A (ja) | 2010-02-24 | 2011-09-08 | Nippon Telegr & Teleph Corp <Ntt> | フォトダイオード |
JP2013008719A (ja) | 2011-06-22 | 2013-01-10 | Nippon Telegr & Teleph Corp <Ntt> | 半導体受光素子 |
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