JP2019160900A - 半導体受光素子、光受信モジュール、光モジュール、及び光伝送装置 - Google Patents
半導体受光素子、光受信モジュール、光モジュール、及び光伝送装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 184
- 230000005540 biological transmission Effects 0.000 title claims abstract description 34
- 230000007935 neutral effect Effects 0.000 claims abstract description 3
- 238000010521 absorption reaction Methods 0.000 claims description 161
- 230000003287 optical effect Effects 0.000 claims description 121
- 230000005684 electric field Effects 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 12
- 230000031700 light absorption Effects 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 9
- 230000000717 retained effect Effects 0.000 abstract 1
- 238000004364 calculation method Methods 0.000 description 19
- 239000000758 substrate Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 13
- 239000013307 optical fiber Substances 0.000 description 12
- 230000007423 decrease Effects 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
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Abstract
Description
図1は、本発明の第1の実施形態に係る光伝送装置1及び光モジュール2の構成を示す模式図である。光伝送装置1は、プリント回路基板11とIC12を備えている。光伝送装置1は、例えば、大容量のルータやスイッチである。光伝送装置1は、例えば交換機の機能を有しており、基地局などに配置される。光伝送装置1に、複数の光モジュール2が搭載されており、光モジュール2より受信用のデータ(受信用の電気信号)を取得し、IC12などを用いて、どこへ何のデータを送信するかを判断し、送信用のデータ(送信用の電気信号)を生成し、プリント回路基板11を介して、該当する光モジュール2へそのデータを伝達する。
図6は、本発明の第2の実施形態に係るフォトダイオード230の概略図である。当該実施形態に係るフォトダイオード230は裏面入射型の半導体受光素子であり、図6はその構成を模式的に示す断面図である。当該実施形態に係るフォトダイオード230は、半導体多層構造に、第1半導体吸収層(アンドープInGaAs吸収層211)とn型半導体コンタクト層(n型InPコンタクト層214)との間に配置されるアンドープInAlGaAs電子走行層238がさらに含まれる点で第1の実施形態と異なっているが、それ以外は第1の実施形態と同じ構造をしている。
Claims (9)
- p型電極と、
前記p型電極に接続するp型半導体コンタクト層と、
n型電極と、
前記n型電極に接続するn型半導体コンタクト層と、
前記p型半導体コンタクト層と前記n型半導体コンタクト層との間に配置される、光吸収層と、
を備える、半導体受光素子であって、
前記光吸収層は、
前記n型半導体コンタクト層側に配置され、厚さWdを有する第1半導体吸収層と、
前記第1半導体吸収層に接し、前記p型半導体コンタクト層側に配置され、厚さWpを有しp型にドープされる第2半導体吸収層と、
を含み、
前記第1半導体吸収層と前記第2吸収層とは同一組成で構成され、
前記第1半導体吸収層は、入力される光を吸収するバンドギャップエネルギーを有し、
前記p型電極と前記n型電極との間に所定の逆バイアス電圧が印加される場合に、前記第1半導体吸収層は空乏化し、前記第2半導体吸収層は前記第1半導体吸収層との界面近傍領域を除いて電荷中立条件を保ち、
厚さWdと厚みWpとの関係が、0.47≦Wp/(Wp+Wd)≦0.9である、
ことを特徴とする、半導体受光素子。 - 請求項1に記載の半導体受光素子であって、
前記第1半導体吸収層は前記n型半導体コンタクト層に接しており、
前記第2半導体吸収層は前記p型半導体コンタクト層に接しており、
厚さWdと厚みWpとの関係が、0.47≦Wp/(Wp+Wd)≦0.85である、
ことを特徴とする、半導体受光素子。 - 請求項1に記載の半導体受光素子であって、
前記第1半導体吸収層と前記n型半導体コンタクト層との間に配置される、半導体電子走行層を、さらに備え、
前記半導体電子走行層は、入力される光を吸収するバンドギャップエネルギーより大きく、光吸収層として機能しないバンドギャップエネルギーを有し、
前記p型電極と前記n型電極との間に所定の逆バイアス電圧が印加される場合に、前記半導体電子走行層は空乏化し、
厚さWdと厚みWpとの関係が、0.5≦Wp/(Wp+Wd)≦0.88である、
ことを特徴とする、半導体受光素子。 - 請求項3に記載の半導体受光素子であって、
前記第1半導体吸収層と前記半導体電子走行層との間に配置され、前記第1半導体吸収層のドーピング濃度及び前記半導体電子走行層のドーピング濃度のいずれよりも高いドーピング濃度の不純物が添加される半導体電界調整層を、
さらに備える、半導体受光素子。 - 請求項1乃至4のいずれかに記載の半導体受光素子であって、
III−V族化合物半導体で構成される半導体多層構造を有する、
ことを特徴とする、半導体受光素子。 - 請求項1乃至4のいずれかに記載の半導体受光素子であって、
前記第1半導体吸収層及び前記第2半導体吸収層がともに、InGaAs、InGaAsP、InAlGaAsからなる群より選択される1の組成によって構成される、
ことを特徴とする、半導体受光素子。 - 請求項1乃至6のいずれかに記載の半導体受光素子、を備える、光受信モジュール。
- 請求項7に記載の光受信モジュールと、
光送信モジュールと、
を備える、光モジュール。 - 請求項8に記載の光モジュールが搭載される、光伝送装置。
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US16/296,492 US10978605B2 (en) | 2018-03-09 | 2019-03-08 | Semiconductor photodiode, optical receiver module, optical module, and optical transmission equipment |
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US11476382B2 (en) | 2021-01-26 | 2022-10-18 | Lumentum Japan, Inc. | Semiconductor light-receiving element |
US11916161B2 (en) | 2021-01-26 | 2024-02-27 | Lumentum Japan, Inc. | Semiconductor light-receiving element |
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CN114864730A (zh) * | 2021-02-04 | 2022-08-05 | 迈络思科技有限公司 | 高调制速度pin型光电二极管 |
US20220246781A1 (en) * | 2021-02-04 | 2022-08-04 | Mellanox Technologies, Ltd. | High modulation speed pin-type photodiode |
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JP2003174184A (ja) * | 2001-12-04 | 2003-06-20 | Ntt Electornics Corp | フォトダイオード |
US6740908B1 (en) * | 2003-03-18 | 2004-05-25 | Agilent Technologies, Inc. | Extended drift heterostructure photodiode having enhanced electron response |
JP2005223022A (ja) * | 2004-02-03 | 2005-08-18 | Ntt Electornics Corp | アバランシ・フォトダイオード |
JP2011176094A (ja) * | 2010-02-24 | 2011-09-08 | Nippon Telegr & Teleph Corp <Ntt> | フォトダイオード |
JP2013008719A (ja) * | 2011-06-22 | 2013-01-10 | Nippon Telegr & Teleph Corp <Ntt> | 半導体受光素子 |
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US6177710B1 (en) | 1996-06-13 | 2001-01-23 | The Furukawa Electric Co., Ltd. | Semiconductor waveguide type photodetector and method for manufacturing the same |
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JP2003174184A (ja) * | 2001-12-04 | 2003-06-20 | Ntt Electornics Corp | フォトダイオード |
US6740908B1 (en) * | 2003-03-18 | 2004-05-25 | Agilent Technologies, Inc. | Extended drift heterostructure photodiode having enhanced electron response |
JP2005223022A (ja) * | 2004-02-03 | 2005-08-18 | Ntt Electornics Corp | アバランシ・フォトダイオード |
JP2011176094A (ja) * | 2010-02-24 | 2011-09-08 | Nippon Telegr & Teleph Corp <Ntt> | フォトダイオード |
JP2013008719A (ja) * | 2011-06-22 | 2013-01-10 | Nippon Telegr & Teleph Corp <Ntt> | 半導体受光素子 |
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US11476382B2 (en) | 2021-01-26 | 2022-10-18 | Lumentum Japan, Inc. | Semiconductor light-receiving element |
US11916161B2 (en) | 2021-01-26 | 2024-02-27 | Lumentum Japan, Inc. | Semiconductor light-receiving element |
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