JP7044618B2 - Etching device - Google Patents

Description

The present invention relates to an etching apparatus.

As an etching apparatus that injects an etching solution onto an object to be etched (work) to perform etching, there is a type that injects the etching solution from a spray nozzle (for example, Patent Document 1).

Japanese Unexamined Patent Publication No. 2017-13307

In an etching apparatus of the type that injects an etching solution from a spray nozzle, as shown in FIGS. 3 and 4 of Patent Document 1, the etching solution spreads in a conical shape from the tip of the spray nozzle toward the object to be etched and is ejected. To. For this reason, in the etching target, etching proceeds rapidly in the portion directly below the spray nozzle (the portion where the distance from the nozzle hole is relatively short), and the portion far from directly below the spray nozzle (the distance from the nozzle hole is relative). Etching progresses slowly in the part far from the nozzle.
That is, in the type of etching apparatus that injects the etching solution from the spray nozzle, there is room for improvement in the in-plane uniformity of the etching process.

The present invention has been made in view of the above problems, and provides an etching apparatus having a structure capable of achieving good in-plane uniformity of etching treatment.

According to the present invention, an etching apparatus for supplying an etching solution to one surface of a sheet-shaped workpiece to be conveyed to etch the workpiece.
A transport unit that transports the work in a predetermined transport direction,
The etching solution discharge port for discharging the etching solution and the etching solution discharge port
Equipped with
The etching solution discharge port has a long slit shape in the width direction of the work orthogonal to the transport direction, and continuously extends between both ends in the width direction of the work .
It is arranged independently of the etching solution discharge port in the vicinity of the etching solution discharge port on the downstream side or the upstream side of the etching solution discharge port in the transport direction, and injects gas onto the one surface of the work. Equipped with a gas injection port,
The gas injection port has a long slit shape in the width direction of the work, and continuously extends between both ends in the width direction of the work.
The gas is injected from the gas injection port in a first direction orthogonal to the one surface of the work.
An etching apparatus is provided in which the second direction, which is the ejection direction of the etching solution from the etching solution ejection port, is a direction intersecting with the first direction .

According to the present invention, good in-plane uniformity of the etching process can be realized.

It is a side sectional view of the etching apparatus which concerns on 1st Embodiment, and shows the structure of an etching unit and its periphery. It is a partially enlarged view of FIG. It is a partially enlarged view of FIG. 4A is a cross-sectional view taken along the line AA of FIG. 3, and FIG. 4B is a cross-sectional view taken along the line BB of FIG. It is a schematic diagram which shows the whole structure of the etching apparatus which concerns on 1st Embodiment. It is a side sectional view of the partial enlargement of the etching unit of the etching apparatus which concerns on 2nd Embodiment. It is a side sectional view of the etching apparatus which concerns on 3rd Embodiment, and shows the structure of an etching unit and its periphery. FIG. 7 is a partially enlarged view of FIG. 7. It is a side sectional view of the partial enlargement of the etching unit of the etching apparatus which concerns on 4th Embodiment. It is a side sectional view of the partial enlargement of the etching unit of the etching apparatus which concerns on 5th Embodiment. It is a side sectional view of the partial enlargement of the etching unit of the etching apparatus which concerns on 6th Embodiment. It is a schematic diagram which shows the whole structure of the etching apparatus which concerns on 6th Embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same components are designated by the same reference numerals, and the description thereof will be omitted as appropriate.

[First Embodiment]
First, the first embodiment will be described with reference to FIGS. 1 to 5.
FIG. 1 is a side sectional view of the etching apparatus 100 according to the first embodiment, and shows the configuration of the etching unit 90 and its surroundings.
FIG. 2 is a partially enlarged view of FIG. 1, showing the configuration of the tip end portion (lower end portion) of the discharge head 60 and its periphery.
FIG. 3 is a partially enlarged view of FIG. 2, showing the configuration of the gas injection port 33, the etching solution discharge port 43, and their surroundings.
4A is a cross-sectional view taken along the line AA of FIG. 3, and FIG. 4B is a cross-sectional view taken along the line BB of FIG.
FIG. 5 is a schematic view showing the overall configuration of the etching apparatus 100 according to the present embodiment.

As shown in any of FIGS. 1 to 3, the etching apparatus 100 according to the present embodiment supplies an etching solution to one surface 11 (FIGS. 2 and 3) of the sheet-shaped workpiece 10 to be conveyed. It is an etching apparatus 100 that etches the work 10.

Here, the etching performed by the etching apparatus 100 on the work 10 may be acid etching or alkaline etching. That is, the etching solution may be acidic or alkaline.
The work 10 has, for example, a sheet-shaped base material, a metal film formed on the base material, and a mask pattern formed on the metal film. The mask pattern is formed on one surface 11 side of the work 10. The etching process in this case is, for example, a process of forming a wiring pattern on a substrate by etching a metal film with an acidic etching solution via a mask pattern.
Further, the work 10 may have a sheet-shaped base material, a metal film formed on the base material, and an exposed resist film formed on the metal film. The resist film is formed on one surface 11 side of the work 10. The etching process in this case is, for example, a process of forming a mask pattern on the metal film by etching the resist film with an alkaline etching solution (so-called development process).

The etching apparatus 100 according to the present embodiment has a transport unit (for example, rollers 20, 21 and a suction plate 51) that transports the work 10 in a predetermined transport direction (right direction in FIGS. 1 to 3; arrow D direction in FIG. 3). , Etc.) and an etching solution discharge port 43 for discharging the etching solution.
The etching solution discharge port 43 has a long slit shape in the width direction of the work 10 (depth direction of FIGS. 1 to 3) orthogonal to the transport direction, and is continuous over both ends in the width direction of the work 10. It has been extended.

According to the present embodiment, the work is formed from an etching solution discharge port 43 which is formed in a long slit shape in the width direction of the work 10 and continuously extends between both ends in the width direction of the work 10. The work 10 can be etched by discharging the etching solution onto one surface 11 of the 10.
Therefore, it is possible to realize good in-plane uniformity of the etching process.

The sheet-shaped work 10 also includes a film-shaped work 10.
The work 10 may be a substrate.
The work 10 may be long and continuously conveyed by the conveying section, or may be short and sequentially conveyed by the conveying section.
The work 10 may have a partially punched structure (a structure having a partial opening). According to the etching apparatus 100 according to the present embodiment, etching (for example, deburring treatment) of the inner peripheral surface of the opening of the work 10 having a partially punched structure can also be suitably performed.

In the following description, the downstream side in the transport direction may be simply referred to as the downstream side, or may be referred to as the front side (front side, front side). Further, the upstream side in the transport direction may be simply referred to as the upstream side, or may be referred to as the rear side (rear side, rear side). Further, in the work 10, a direction along a portion facing the gas injection port 33 and the etching solution discharge port 43 and orthogonal to the transport direction may be referred to as a left-right direction.

In the case of the present embodiment, the etching apparatus 100 further includes a gas injection port 33 for injecting gas onto one surface 11 of the work 10. The gas injection port 33 is arranged independently of the etching liquid discharge port 43 in the vicinity of the etching liquid discharge port 43 on the downstream side or the upstream side in the transport direction from the etching liquid discharge port 43.
The gas injection port 33 has a long slit shape in the width direction of the work 10, and continuously extends between both ends in the width direction of the work 10.

The etching liquid discharged from the etching liquid discharge port 43 can be urged by the gas ejected from the gas injection port 33 and supplied to one surface 11 of the work 10. Therefore, since the etching solution can be vigorously supplied to one surface 11 of the work 10, the progress of etching in the direction perpendicular to the surface of the work 10 can be easily promoted. Therefore, since a good etching factor can be realized, it is possible to easily perform etching of a finer pattern.

In the case of the present embodiment, the gas injection port 33 is arranged on the downstream side in the transport direction with respect to the etching solution discharge port 43.
The gas injection port 33 extends in parallel with the etching solution discharge port 43.
Each of the etching solution discharge port 43 and the gas injection port 33 extends linearly along the width direction of the work 10.

The etching apparatus 100 is configured to inject gas from the gas injection port 33 in a first direction orthogonal to one surface 11 of the work 10.
Therefore, the progress of etching in the direction perpendicular to the plane of the work 10 can be further promoted, and a good etching factor can be realized, so that a finer pattern can be easily etched.
Here, the fact that the first direction is orthogonal to one surface 11 of the work 10 means that the first direction is substantially orthogonal to one surface 11, for example, the first direction. The angle formed by one surface 11 is preferably 90 degrees ± 10 degrees or less, and the angle formed by the first direction and one surface 11 is more preferably ± 5 degrees or less.

On the other hand, the second direction, which is the discharge direction of the etching liquid from the etching liquid discharge port 43, is a direction that intersects with the first direction, which is the gas injection direction from the gas injection port 33.
Therefore, it is possible to more reliably perform the operation of urging the etching liquid discharged from the etching liquid discharge port 43 by the gas injected from the gas injection port 33 and supplying it to one surface 11 of the work 10. It becomes.

In the case of the present embodiment, the second direction is inclined with respect to the first direction so that the ejection direction (second direction) of the etching solution from the etching solution discharge port 43 is forward with respect to the transport direction. In the case of the embodiment, the angle formed by the first direction and one surface 11 is larger than the angle formed by the second direction and one surface 11.
Further, the transport direction is a direction along one surface 11 of the work 10.

The etching apparatus 100 includes an etching unit 90 described below, and a transport unit including rollers 20, 21 and a suction plate 51.

In the case of the present embodiment, the etching apparatus 100 etches one surface 11 of the work 10 by the etching unit 90 while the work 10 is conveyed in one direction (arrow D direction) in a flat state by the conveying unit.
In the case of the present embodiment, more specifically, the arrow D direction is the horizontal direction. However, the present invention is not limited to this example, and the transport direction (arrow D direction) of the work 10 is not particularly limited.

The transport unit is, for example, a pair of upper and lower rollers 20 arranged on the upstream side of the etching unit 90 and holding the work 10 from above and below, and upper and lower rollers arranged on the downstream side of the etching unit 90 and holding the work 10 from above and below. It includes a pair of rollers 21 and.
At least one of the pair of rollers 20 on the upstream side is rotationally driven by an actuator such as a motor (not shown), and at least one of the pair of rollers 21 on the downstream side is rotationally driven by an actuator such as a motor (not shown) on the downstream side. The 10 is conveyed in the conveying direction.

The suction plate 51 is a flat plate-shaped member, and is horizontally arranged between the pair of rollers 20 and the pair of rollers 21.
The height position (position in the vertical direction) of the support surface 51a, which is the upper surface of the suction plate 51, is the upper end of the lower roller 20 of the pair of rollers 20 and the lower roller 21 of the pair of rollers 21. It is set at the same position as the top edge. Therefore, the work 10 is conveyed along the support surface 51a of the suction plate 51.
The width dimension of the suction plate 51 (dimension direction dimension in FIG. 1) is larger than the width dimension of the work 10 (depth direction dimension in FIG. 1), and the work 10 is conveyed between both ends of the suction plate 51 in the width direction. It has become so.

A suction box 52 is arranged below the suction plate 51. The upper end of the suction box 52 is open, and the opening at the upper end of the suction box 52 is closed by the suction plate 51. The suction plate 51 is supported by, for example, a suction box 52.
The internal space of the suction box 52 is a negative pressure chamber 52a set to negative pressure. That is, the atmosphere inside the negative pressure chamber 52a of the suction box 52 is sucked by a suction source (not shown), so that the negative pressure chamber 52a is maintained at negative pressure.
The suction plate 51 is formed with a large number of pores (not shown) penetrating the suction plate 51 up and down. Therefore, the atmosphere on the upper side of the suction plate 51 is sucked to the lower side of the suction plate 51 through a large number of pores of the suction plate 51.
When the work 10 is conveyed along the support surface 51a which is the upper surface of the suction plate 51, the work 10 is sucked toward the support surface 51a, so that the work 10 can be suppressed from rising (fluttering), and the work 10 can be suppressed. The transport path can be maintained as a horizontal path along the support surface 51a.
That is, the work 10 is horizontally conveyed along the support surface 51a of the suction plate 51 between the pair of rollers 20 and the pair of rollers 21.
In the present invention, the transport mechanism for transporting the work 10 is not limited to this example, and the short work 10 is transported to the position on the upstream side of the etching unit 90 by the roller 20 on the upstream side of the suction plate 51, and the roller 20 is transported. After delivering the work 10 to the suction plate 51, the work 10 is sucked by the suction plate 51, and the suction plate 51 moves in the transport direction in that state, and the work 10 is etched by the etching unit 90 in the process. The work 10 may be handed over from the suction plate 51 to the roller 21 on the downstream side thereof. Further, in a state where the work 10 is attracted to the suction plate 51, the etching unit 90 moves relative to the work 10 and the suction plate 51 (moves to the left in FIG. 1), and the etching unit 90 moves in the process. The work 10 may be etched.

As described above, the transport portion has a support surface 51a that supports the work 10 on the back surface 12 (FIGS. 2 and 3) with respect to one surface 11.

The etching unit 90 is arranged above the suction plate 51 at a distance.
The size of the suction plate 51 in the transport direction is larger than the dimension of the etching unit 90 in the transport direction. The end of the suction plate 51 on the upstream side in the transport direction is located on the upstream side in the transport direction with respect to the end of the etching unit 90 on the upstream side in the transport direction, and the end of the suction plate 51 on the downstream side in the transport direction. The portion is located on the downstream side in the transport direction with respect to the end portion of the etching unit 90 on the downstream side in the transport direction.
When the work 10 is conveyed along the support surface 51a of the suction plate 51, the etching unit 90 is located above the portion of the work 10 located on the support surface 51a.
The etching unit 90 has a gas injection port 33, an etching liquid discharge port 43, and a first recovery path 71 and a second recovery path 81, which will be described later. That is, the gas injection port 33, the etching solution discharge port 43, the first recovery path 71, and the second recovery path 81 are arranged at positions above the work 10.

The etching unit 90 includes a discharge head 60 having a gas injection port 33 and an etching liquid discharge port 43.
The facing surface 61, which is the lower end surface of the discharge head 60, faces the support surface 51a of the suction plate 51.
Here, the facing distance between each part of the facing surface 61 and the support surface 51a (distance d3 in FIGS. 2 and 3) is equal (constant in each part of the facing surface 61). The gas injection port 33 and the etching solution discharge port 43 are opened independently of each other on the facing surface 61.

Therefore, the distance d1 (FIG. 3) from the gas injection port 33 to the support surface 51a and the distance d2 (FIG. 3) from the etching solution discharge port 43 to the support surface 51a are equal to each other.

More specifically, as shown in FIG. 3, the facing surface 61 has a first portion 61a located on the upstream side of the etching solution discharge port 43, a downstream side of the etching solution discharge port 43 and an upstream side of the gas injection port 33. It has a second portion 61b located in, and a third portion 61c located on the downstream side of the gas injection port 33.
The distance between the first portion 61a and the support surface 51a, the distance between the second portion 61b and the support surface 51a, and the distance between the third portion 61c and the support surface 51a are equal to each other. It is d3.
Similarly, the facing distance between the first portion 61a and one surface 11 of the work 10, the facing distance between the second portion 61b and one surface 11, and the facing distance between the third portion 61c and one surface 11 are , Equal to each other, both at a distance d0.

In the case of the present embodiment, the support surface 51a and the facing surface 61 are each planar, and the support surface 51a and the facing surface 61 face each other in parallel.

The discharge head 60 has an etching liquid supply path 42 for supplying the etching liquid to the etching liquid discharge port 43 and a gas supply path 32 for supplying the gas to the gas injection port 33.
The etching solution supply path 42 is arranged on the upstream side of the gas supply path 32.
The etching solution discharge port 43 is open at the downstream end (lower end) of the etching liquid supply path 42, and the gas injection port 33 is open at the downstream end (lower end) of the gas supply path 32.

The upper end of the gas supply path 32 communicates with the gas front chamber 31, which will be described later. In the gas supply path 32, the peripheral portion excluding the portion communicating with the gas front chamber 31 and the gas injection port 33 at the lower end is surrounded by the actual portion of the discharge head 60.
Therefore, the gas supplied from the gas supply source described later to the gas supply path 32 via the gas front chamber 31 is injected from the gas injection port 33.

The upper end of the etching solution supply path 42 communicates with the etching solution front chamber 41, which will be described later. In the etching solution supply path 42, the peripheral portion excluding the portion communicating with the etching solution front chamber 41 and the etching solution discharge port 43 at the lower end is surrounded by the actual portion of the discharge head 60.
Therefore, the etching solution supplied from the etching solution supply source described later to the etching solution supply path 42 via the etching solution front chamber 41 is discharged from the etching solution discharge port 43.

In a cross section (cross section shown in FIGS. 1 to 3) cut along a plane orthogonal to one surface 11 of the work 10 and along the transport direction, the gas injection port 33 and the support surface are on the extension line of the gas supply path 32. There are no obstacles between the etching solution and the support surface 51a, and there are no obstacles between the etching solution discharge port 43 and the support surface 51a on the extension line of the etching solution supply path 42. The obstacle referred to here is a component of the etching apparatus 100, and the work 10 is excluded from the obstacle referred to here.

In the case of the present embodiment, the extension line of the gas supply path 32 and the etching solution are formed in a cross section (cross section shown in FIGS. 1 to 3) cut along a plane orthogonal to one surface 11 of the work 10 and along the transport direction. The extension line of the supply path 42 intersects with the extension line of the supply path 42 before reaching one surface 11 of the work 10.
That is, the intersection I of the straight line L1 (the axis of the gas supply path 32 in the above cross section) and the straight line L2 (the axis of the etching solution supply path 42 in the above cross section) shown in FIG. 3 is one surface of the facing surface 61 and the work 10. It is designed to be located between 11 and 11.

Here, the gas supply path 32 includes a first portion 32a, a second portion 32b, and a third portion 32c in order from the side far from the gas injection port 33.
Of these, the flow path width of the second portion 32b (the flow path width in the left-right direction in FIGS. 2 and 3, that is, the flow path width in the transport direction) is smaller than the flow path width of the first portion 32a, and the flow path width of the third portion 32c. Is even smaller than the flow path width of the second portion 32b.
That is, in the width direction (front-back direction) of the gas injection port 33 orthogonal to the longitudinal direction (left-right direction) of the gas injection port 33, the dimension of the lumen region of the gas supply path 32 is stepwise toward the downstream side. It has been reduced to.
Therefore, the gas can be injected more vigorously from the gas injection port 33.

More specifically, the second portion 32b is connected to the lower side of the first portion 32a, and the third portion 32c is connected to the lower side of the second portion 32b. The first portion 32a allows gas to pass from the upper end to the lower end of the first portion 32a, the second portion 32b allows gas to pass from the upper end to the lower end of the second portion 32b, and the third portion 32c. Passes the gas from the upper end to the lower end of the third portion 32c.
The first portion 32a, the second portion 32b, and the third portion 32c have the same dimensions in the width direction (depth direction in FIGS. 1 to 3) of the work 10.
The dimension of the second portion 32b in the transport direction is smaller than the dimension of the first portion 32a in the transport direction, and the dimension of the third portion 32c in the transport direction is further smaller than the dimension of the second portion 32b in the transport direction.
The dimension of the first portion 32a in the transport direction is constant from the upper end to the lower end of the first portion 32a.
Similarly, the dimension of the second portion 32b in the transport direction is constant from the upper end to the lower end of the second portion 32b.
Similarly, the dimension of the third portion 32c in the transport direction is constant from the upper end to the lower end of the third portion 32c.

Here, the third portion 32c of the gas supply path 32 has a slit shape that is orthogonal to the width direction of the work 10 (the depth direction of FIGS. 1 to 3), that is, the transport direction and extends in the direction along the support surface 51a. Is. The third portion 32c extends continuously between both ends of the work 10 in the width direction.
The third portion 32c has a slit shape, and the internal space of the third portion 32c has a plate shape. This virtual plate (hereinafter referred to as the first plate) is arranged vertically, and the plate surface faces the downstream side and the upstream side in the transport direction.
Further, the gas injection port 33 also has a slit shape that is orthogonal to the transport direction and extends in the direction along the support surface 51a, similarly to the third portion 32c.
Therefore, the gas supplied from the gas supply source described later to the gas supply path 32 via the gas front chamber 31 substantially linearly flows vertically downward in the second portion 32b, and then flows from the gas injection port 33. It is sprayed substantially vertically downward (in the direction along the first plate).
That is, the gas is injected from the gas injection port 33 in the shape of a flat plate blade along the gas supply path 32.

Further, the etching solution supply path 42 also has a slit shape orthogonal to the transport direction and extending in the direction along the support surface 51a. The etching solution supply path 42 also extends continuously between both ends of the work 10 in the width direction.
The etching solution supply path 42 has a slit shape, and the internal space of the etching solution supply path 42 has a plate shape. This virtual plate (hereinafter referred to as the second plate) is inclined with respect to the above-mentioned first plate. That is, the second plate is inclined downward to the right in FIGS. 2 and 3.
Further, the etching solution discharge port 43 also has a slit shape that is orthogonal to the transport direction and extends in the direction along the support surface 51a, similarly to the etching solution supply path 42.
Therefore, the etching solution supplied from the etching solution supply source described later to the etching solution supply path 42 via the etching solution front chamber 41 is substantially in the lower right direction in FIGS. 2 and 3 in the etching solution supply path 42. After flowing linearly, it is discharged from the etching solution discharge port 43 in the lower right direction (direction along the second plate) in FIGS. 2 and 3.
As a result, the etching solution is preferably discharged from the etching solution discharge port 43 in the shape of a flat plate blade along the etching solution supply path 42.

As described above, each of the gas supply path 32 (particularly the third portion 32c) and the etching solution supply path 42 has a slit shape that is orthogonal to the transport direction and extends in the direction along the support surface 51a, and is a work 10. It extends continuously between both ends in the width direction of (see FIGS. 4 (a) and 4 (b)).

Here, the first direction, which is the gas injection direction from the gas injection port 33, is the direction along the plate surface of the first plate and the direction from the second portion 32b toward the gas injection port 33. ..
Further, the second direction, which is the ejection direction of the etching solution from the etching solution discharge port 43, is a direction along the plate surface of the second plate, and is directed from the etching solution front chamber 41 toward the etching solution discharge port 43. It becomes the direction.
The inclination angle of the second direction (the injection direction of the etching liquid from the etching liquid discharge port 43) with respect to the first direction (the injection direction of the gas from the gas injection port 33) is not particularly limited, but is, for example, 10 degrees or more and 80 degrees or less. It may be 30 degrees or more and 60 degrees or less.

The gas front chamber 31 is, for example, a space having a wider flow path than the first portion 32a of the gas supply path 32, and is connected to the upper side of the first portion 32a of the gas supply path 32. The gas front chamber 31 is connected to a gas supply source described later.
The etching solution front chamber 41 is a space having a wider flow path than the etching solution supply path 42, and is connected to the upper side of the etching solution supply path 42. The etching solution front chamber 41 is connected to an etching solution supply source described later.

As described above, the discharge head 60 has an etching solution discharge port 43.
The etching unit 90 is further arranged at a position on the upstream side of the discharge head 60 in the transport direction, and has a first recovery path 71 that sucks and collects the etch liquid discharged from the etchant discharge port 43 and a transport direction. A second recovery path 81, which is arranged at a position on the downstream side of the discharge head 60 and sucks and collects the etching liquid discharged from the etching liquid discharge port 43, is provided.
In the case of the present embodiment, more specifically, each of the first recovery path 71 and the second recovery path 81 sucks the etching solution discharged from the etching solution discharge port 43 together with the gas ejected from the gas injection port 33. And collect it.

The first recovery path 71 is arranged adjacent to the upstream side of the discharge head 60 in the transport direction, and is open at the lower end of the first recovery path 71.
For example, in the first recovery path 71, the front end portion of the first recovery path 71 is defined by the rear surface of the discharge head 60.
Further, the rear end portion and the left and right end portions of the first recovery path 71 are defined by the first recovery path constituent wall 72.
The first recovery path 71 is a tubular space. A suction source communication unit 73, which is a space connected to a suction source described later, is arranged on the upper side of the first collection path 71, and the lower end of the suction source communication unit 73 communicates with the upper end of the first collection path 71. is doing. The suction source communication unit 73 is arranged behind the gas front chamber 31.
The first recovery path 71 sucks the atmosphere from the opening at the lower end thereof to suck the etching liquid discharged from the etching liquid discharge port 43 onto one surface 11 of the work 10 and the gas ejected from the gas injection port 33. Suction.

The second recovery path 81 is arranged adjacent to the downstream side of the discharge head 60 in the transport direction, and is open at the lower end of the second recovery path 81.
For example, in the second recovery path 81, the rear end portion of the second recovery path 81 is defined by the front surface of the discharge head 60.
Further, the front end portion and the left and right end portions of the second recovery path 81 are defined by the second recovery path constituent wall 82.
The second recovery path 81 is a cylindrical space. A suction source communication unit 83, which is a space connected to a suction source described later, is arranged on the upper side of the second collection path 81, and the lower end of the suction source communication unit 83 communicates with the upper end of the second collection path 81. is doing. The suction source communication unit 83 is arranged on the front side of the gas front chamber 31.
The second recovery path 81 sucks the atmosphere from the opening at the lower end thereof, so that the etching liquid discharged from the etching liquid discharge port 43 onto one surface 11 of the work 10 and the gas ejected from the gas injection port 33 can be sucked. Suction.

The height position of the opening at the lower end of the first recovery path 71 is set to a height position equivalent to the height position of the facing surface 61 of the discharge head 60. That is, the height position of the lower end 72a of the first recovery path constituent wall 72 is set to be the same as the height position of the facing surface 61.
Similarly, the height position of the opening at the lower end of the second recovery path 81 is set to the same height position as the height position of the facing surface 61 of the discharge head 60. That is, the height position of the lower end 82a of the second recovery path constituent wall 82 is set to be the same as the height position of the facing surface 61.

The total of the volume of the atmosphere sucked by the first recovery path 71 per unit time and the volume of the atmosphere sucked by the second recovery path 81 per unit time is discharged from the etching solution discharge port 43 per unit time. It is preferably larger than the total amount of the etching solution and the gas injected from the gas injection port 33 per unit time.

Although an example in which the etching unit 90 separately includes the first recovery path construction wall 72 and the second recovery path construction wall 82 has been described here, the first recovery path construction wall 72 and the second recovery path configuration wall 72 have been described. The wall 82 may be composed of parts of a common tubular body.
That is, for example, the circumference of the discharge head 60 may be surrounded by one tubular body, and the lower end of the tubular body may be open. In this case, in the internal space of the cylindrical body, the portion located on the rear side of the discharge head 60 is the first recovery path 71, and the portion located on the front side of the discharge head 60 is the second recovery path 81.
Further, in this case, the suction source communication unit 73 and the suction source communication unit 83 may be configured by a part of one space surrounding the periphery of the gas front chamber 31. That is, for example, the circumference of the gas anterior chamber 31 is surrounded by one tubular body, and in the internal space of the tubular body, the portion located behind the gas anterior chamber 31 is the suction source connecting portion 73. At the same time, the portion located in front of the gas anterior chamber 31 may be the suction source communication unit 83.

Here, as shown in FIG. 2, the dimension (distance d4) of the facing surface 61 in the transport direction is larger than the facing distance (distance d3) between the facing surface 61 and the support surface 51a.
Therefore, the facing distance between the facing surface 61 and one surface 11 of the work 10 is sufficiently narrower than the dimension of the facing surface 61 in the transport direction, and the etching of one surface 11 by the etching solution is performed in the narrow space. It will be done.

Further, in the transport direction, the distance d5 from the etching solution discharge port 43 to the gas injection port 33 is smaller than the distance d6 from the gas injection port 33 to the downstream end of the facing surface 61.
Further, the distance d5 is preferably smaller than the facing distance between one surface 11 of the work 10 and the facing surface 61 (distance d0 shown in FIG. 3).
However, the distance d5 is preferably larger than the dimension of the third portion 32c of the gas supply path 32 in the transport direction.
Further, in the transport direction, the distance d5 from the etching liquid discharge port 43 to the gas injection port 33 is smaller than the distance d7 from the etching liquid discharge port 43 to the upstream end of the facing surface 61.
Therefore, the gas ejected from the gas injection port 33 arranged close to the etching solution discharge port 43 causes the etching solution discharged from the etching solution discharge port 43 to be continuously applied to one surface 11 of the work 10. You can hit it.

The distance d0 can be, for example, 0.5 mm or more and 20 mm or less, preferably 1 mm or more and 10 mm or less.
Further, since the distances d1, d2, and d3 are the sum of the distance d0 and the thickness of the work 10, they are determined according to the distance d0 and the thickness of the work 10. The thickness of the work 10 to be etched by the etching apparatus 100 is not particularly limited, but may be, for example, several μm or more. The upper limit of the thickness of the work 10 is not particularly limited.
Further, the etching apparatus 100 is configured so that the distance d0 can be adjusted (therefore, the distances d1, d2, and d3 can be adjusted). For example, the distance d0 can be adjusted by raising and lowering at least one of the etching unit 90 and the suction plate 51.
Further, the distance d4 can be, for example, 20 mm or more and 200 mm or less.
In the case of the present embodiment, the distance d5 is "an extension of the gas supply path 32 and an extension of the etching solution supply path 42 in a cross section cut along a plane orthogonal to one surface 11 of the work 10 and along the transport direction. Within the range that satisfies the condition that "lines intersect before reaching one surface 11 of the work 10", the distance d0, the angle formed by the one surface 11 of the work 10 and the first direction, and the first direction. It can be set according to the tilt angle in the second direction with respect to. The distance d5 is preferably 0.5 mm or more, and 1 mm or more so that the gas injection from the gas injection port 33 and the etching liquid discharge from the etching liquid discharge port 43 can be performed independently of each other. Is more preferable.
Further, the distance d6 can be, for example, 10 mm or more and 100 mm or less.
Further, the distance d7 can be, for example, 15 mm or more and 150 mm or less.

As shown in FIG. 5, the etching apparatus 100 includes, for example, a blower 34 which is a source of gas injected from the gas injection port 33, and a filter 35 which filters the gas supplied from the blower 34. .. The filter 35 includes, for example, a pre-filter and a HEPA filter.
The etching unit 90 includes a gas introduction unit 91 that introduces the gas supplied from the blower 34 through the filter 35 into the etching unit 90. The gas introduced into the gas introduction unit 91 is supplied to the gas supply path 32 via the gas front chamber 31 shown in FIG. 1 and is injected from the gas injection port 33.
A gas supply path (not shown) is interposed between the blower 34 and the filter 35, and between the filter 35 and the gas introduction unit 91, so that clean gas can be supplied from the blower 34 to the gas introduction unit 91. It has become.

Further, the etching apparatus 100 includes, for example, a liquid tank 44 and a pump 45, which are sources of etching liquid discharged from the etching liquid discharge port 43. The etching solution is stored in the liquid tank 44.
The etching unit 90 includes an etching solution introduction unit 92 that introduces the etching solution pumped by the pump 45 into the etching unit 90. The etching solution introduced into the etching solution introduction unit 92 is supplied to the etching solution supply path 42 via the etching solution front chamber 41 shown in FIG. 1 and the like, and is discharged from the etching solution discharge port 43.
The liquid tank 44 and the pump 45, and the pump 45 and the etching liquid introduction portion 92 are connected by pipes (not shown).
The etching apparatus 100 further includes a valve 46, a flow rate controller 47, and a check valve 48, which are provided in the piping between the pump 45 and the etching solution introduction unit 92, respectively. The valve 46 can stop the supply of the etching solution to the etching solution introduction section 92, and the flow controller 47 can adjust the flow rate of the etching solution supplied to the etching solution introduction section 92.

Further, the etching apparatus 100 includes a blower 76 which is a suction source for sucking the atmosphere from the first recovery path 71 and the second recovery path 81 through the suction source communication unit 73 and the suction source communication unit 83.
The etching unit 90 includes a suction source communication unit 73 and a discharge unit 93 connected to the suction source communication unit 83.
The discharge unit 93 and the blower 76 are connected by a gas exhaust passage (not shown) so that the exhaust gas from the etching unit 90 can be sent from the discharge unit 93 to the blower 76 without leaking.
In the gas exhaust passage between the discharge unit 93 and the blower 76, an inertial dust collecting drainer filter box 74 and a filter 75 are provided in this order from the discharge unit 93 side.
Further, a filter 77 is provided after the blower 76.
The filter 75 is, for example, a pre-filter, and the filter 77 is, for example, a HEPA filter.
The inertial dust collecting drainer filter box 74 can collect the etching solution and foreign matter contained in the exhaust gas, and then the filter 75 can collect finer foreign matter contained in the exhaust gas. Further, by discharging the exhaust gas from the blower 76 through the filter 77, the exhaust gas from the etching apparatus 100 can be purified.

Next, the operation will be described.

The etching of the work 10 by the etching unit 90 of the etching apparatus 100 is performed while the work 10 is being conveyed by the conveying unit.
That is, while transporting the work 10 toward the right in FIG. 1, gas is injected from the gas injection port 33 to one surface 11 of the work 10 and etching from the etching solution discharge port 43 to one surface 11 of the work 10. Discharge the liquid.
Further, the recovery of the etching liquid via the first recovery path 71 and the recovery of the etching liquid via the second recovery path 81 are also performed in parallel with the injection of the gas to the one surface 11 and the discharge of the etching liquid.
The work 10 is continuously conveyed, for example, at a constant speed.
Further, the gas injection from the gas injection port 33 is continuously performed, for example, at a constant flow rate.
Further, the etching liquid is continuously discharged from the etching liquid discharge port 43, for example, at a constant flow rate.
Further, the exhaust from the first recovery path 71 is continuously performed, for example, at a constant flow rate.
Further, the exhaust from the second recovery path 81 is continuously performed, for example, at a constant flow rate.

This makes it possible to etch one of the surfaces 11.
Here, the etching liquid discharged from the etching liquid discharge port 43 collides with the gas near the intersection I shown in FIG. 3, is urged downward by the gas, and collides with one surface 11.
Therefore, the etching can be performed while hitting one surface 11 of the work 10 with the etching solution. Therefore, the retention of the etching solution can be suppressed, and etching can be performed while constantly supplying a new etching solution having a high etching ability to one surface 11.
Further, as described above, since the first direction, which is the gas injection direction from the gas injection port 33, is orthogonal to one surface 11, the progress of etching in the plane-direct direction of the work 10 is promoted. Since it is possible to realize a good etching factor, it is possible to easily perform etching of a finer pattern.

The etching liquid supplied to one surface 11 from the etching liquid discharge port 43 and the gas jetted from the gas injection port 33 are the first recovery path 71 and the first recovery path 71 and the gas injected from the upstream side and the downstream side of the discharge head 60, respectively. 2 Collected by the collection path 81.

Here, since the etching solution discharge port 43 is arranged independently of the gas injection port 33, it is suppressed that the etching solution becomes an extremely fine mist, and the etching solution is in the form of a lump relatively larger than such a mist. The etching solution of No. 1 is urged by a gas and is struck on one surface 11. Therefore, the etching solution can be applied to one surface 11 with a larger energy, and the etching process can be performed more efficiently. Since the etching can be performed in a shorter time, the progress of etching in the surface direction of the work 10 can be suppressed, and a good etching factor can be realized, so that the etching of a finer pattern can be easily performed.

Further, in a cross section cut along a plane orthogonal to one surface 11 of the work 10 and along the transport direction, an obstacle is formed between the gas injection port 33 and the support surface 51a on the extension line of the gas supply path 32. There is no obstacle on the extension line of the etching solution supply path 42 between the etching solution discharge port 43 and the support surface 51a. Therefore, the momentum of the etching solution struck on one surface 11 of the work 10 is not weakened by obstacles.

Further, in a cross section cut along a plane orthogonal to one surface 11 of the work 10 and along the transport direction, the extension line of the gas supply path 32 and the extension line of the etching solution supply path 42 are one of the work 10. Since it intersects before reaching the surface 11, the gas and the etching liquid collide with each other in the air between the gas injection port 33 and the etching liquid discharge port 43 and the one surface 11, and the etching liquid is urged by the gas. , The etching solution can be applied to one surface 11.

Further, each of the gas supply path 32 and the etching solution supply path 42 has a slit shape that is orthogonal to the transport direction and extends in the direction along the support surface 51a, and extends between both ends in the width direction of the work 10. Since the gas and the etching solution are continuously extended, the gas and the etching solution can be injected or discharged in a blade shape from the gas injection port 33 and the etching solution discharge port 43, respectively. Therefore, one surface 11 can be etched with a blade-shaped (spatula-shaped) etching solution.
As a result, etching can be performed uniformly over the entire width direction of one surface 11 of the work 10, and as a result, etching can be performed uniformly over the entire surface of one surface 11 of the work 10. It is possible.

Further, since the facing distance between each portion of the facing surface 61 of the discharge head 60 and the support surface 51a is equal, the entire facing distance between the facing surface 61 and the support surface 51a can be made a narrow distance, and the discharge head can be set to a narrow distance. It is possible to improve the recovery efficiency of the etching solution and the like by the first recovery path 71 and the second recovery path 81 arranged before and after the 60.

Further, in the transport direction, the distance d5 from the etching solution discharge port 43 to the gas injection port 33 is smaller than the distance d6 from the gas injection port 33 to the downstream end of the facing surface 61, so that on the downstream side of the gas injection port 33. A region where the facing distance between the facing surface 61 and the supporting surface 51a is narrow is formed to have a length of a certain length or more. Therefore, the etching solution can be satisfactorily sucked by the second recovery path 81 on the downstream side through this region.

Further, in the transport direction, the distance d5 from the etching liquid discharge port 43 to the gas injection port 33 is smaller than the distance d7 from the etching liquid discharge port 43 to the upstream end of the facing surface 61, so that it is upstream of the etching liquid discharge port 43. On the side, a region where the facing distance between the facing surface 61 and the supporting surface 51a is narrow is formed to have a length of a certain length or more. Therefore, the etching solution can be satisfactorily sucked by the first recovery path 71 on the upstream side through this region.

[Second Embodiment]
Next, the etching apparatus 100 according to the second embodiment will be described with reference to FIG.
FIG. 6 is a partially enlarged side sectional view of the etching unit 90 of the etching apparatus 100 according to the present embodiment.
The etching apparatus 100 according to the present embodiment is different from the etching apparatus 100 according to the first embodiment in the following points, and is different from the etching apparatus 100 according to the first embodiment in other respects. It is configured in the same way.

In the case of the present embodiment, the extension line of the gas supply path 32 and the etching solution supply path 42 in a cross section (cross section shown in FIG. 6) cut along a plane orthogonal to one surface 11 of the work 10 and along the transport direction. Is configured to intersect with the extension line of the work 10 after reaching one surface 11 of the work 10.
That is, the intersection I of the straight line L1 (the axis of the gas supply path 32 in the above cross section) and the straight line L2 (the axis of the etching solution supply path 42 in the above cross section) shown in FIG. 6 is a facing surface with respect to one surface 11. It is located on the opposite side (lower side) from the 61 side.

Also in the case of the present embodiment, the distance d0, the angle formed by the one surface 11 of the work 10 and the first direction, and the inclination angle in the second direction with respect to the first direction are the same as those in the first embodiment.
In the case of the present embodiment, the distance d5 may be larger than the distance d0.
In the case of this embodiment, the distance d5 can be, for example, 1 mm or more.

In the case of the present embodiment, the etching liquid discharged from the etching liquid discharge port 43 and the gas injected from the gas injection port 33 do not collide with each other, for example, between the facing surface 61 and one surface 11, and the etching liquid does not collide with each other. Is supplied onto one surface 11, the gas ejected from the gas injection port 33 collides with the etching solution, and the etching solution is continuously urged by the gas to the one surface 11. It becomes an action to hit.

Also in this embodiment, it is possible to satisfactorily etch the work 10.
In this embodiment, since the extension line of the gas supply path 32 and the extension line of the etching solution supply path 42 intersect after reaching one surface 11 of the work 10, the etching solution adhered to one surface 11. Can be prevented from moving to the downstream side by the air flow ejected from the gas injection port 33. Therefore, it is possible to more reliably prevent the work 10 from being conveyed to the downstream side of the etching unit 90 with the etching solution adhering to one surface 11. Further, a part of the etching solution between the facing surface 61 and one surface 11 is flushed upstream together with the foreign matter removed from the one surface 11 by the gas injected from the gas injection port 33, and this is first. It can be collected by the collection path 71.

[Third Embodiment]
Next, the etching apparatus 100 according to the third embodiment will be described with reference to FIGS. 7 and 8.
FIG. 7 is a side sectional view of the etching apparatus 100 according to the third embodiment, and shows the configuration of the etching unit 90 and its surroundings.
FIG. 8 is a partially enlarged view of FIG. 7, showing a configuration in the vicinity of the facing surface 61 of the discharge head 60.
The etching apparatus 100 according to the present embodiment is different from the etching apparatus 100 according to the first embodiment in the following points, and is different from the etching apparatus 100 according to the first embodiment in other respects. It is configured in the same way.

In the first embodiment described above, an example in which the work 10 moves linearly along the flat plate-shaped suction plate 51 at a position facing the etching unit 90 has been described.
On the other hand, in the case of the present embodiment, the transport unit does not include the roller 20, the roller 21, the suction plate 51 and the suction box 52, and instead, the roller 25 is rotationally driven by an actuator such as a motor (not shown). It is equipped with.
In the present embodiment, the work 10 moves in an arc shape along the peripheral surface 25a of the cylindrical roller 25 at a position facing the etching unit 90, and the support surface that supports the work 10 is a roller. It is a peripheral surface 25a of 25.

Further, the shape of the portion of the etching unit 90 facing the roller 25 is also a concave curved surface along the peripheral surface 25a of the roller 25.
That is, the transport portion is a cylindrical roller 25, the support surface is a peripheral surface 25a of the roller 25, and the facing surface 61 of the discharge head 60 is a concave curved surface along the peripheral surface 25a of the roller 25.
Further, the curved surface facing portion 72b and the curved surface facing portion 82b, which are the portions of the first recovery path constituent wall 72 and the second recovery path constituent wall 82 facing the roller 25, also have a shape along the peripheral surface 25a of the roller 25. It has become.

As shown in FIG. 8, also in the present embodiment, the distance d1 from the gas injection port 33 to the support surface 51a and the distance d2 from the etching solution discharge port 43 to the support surface 51a are equal to each other.
Further, the facing distance (distance d3) between each part of the facing surface 61 and the peripheral surface 25a which is a support surface is an equal distance (constant in each part of the facing surface 61).

The facing surface 61 of the etching unit 90 is arranged downward, for example.
The etching unit 90 etches one surface 11 of the work 10.

One surface 11 of the work 10 can be etched by the etching unit 90 while the work 10 is conveyed by the conveying portion including the roller 25.

The same effect as that of the first embodiment can be obtained by this embodiment as well.

[Fourth Embodiment]
Next, the etching apparatus 100 according to the fourth embodiment will be described with reference to FIG.
The etching apparatus 100 according to the present embodiment is different from the etching apparatus 100 according to the first embodiment in the following points, and is different from the etching apparatus 100 according to the first embodiment in other respects. It is configured in the same way.

As shown in FIG. 9, the etching apparatus 100 according to the present embodiment is arranged at a position on the downstream side of the second recovery path 81 in the transport direction of the work 10, and injects gas toward the second recovery path 81. It is equipped with an air knife 110. That is, the air knife 110 injects gas toward the upstream side in the transport direction.

The air knife 110 has, for example, a main flow path 111 extending in the depth direction of FIG. 9 (orthogonal to the transport direction and extending in a direction along the support surface 51a) and a slit shape communicating with the main flow path 111. The injection slit 112 and the like are provided. The injection slit 112 extends in the depth direction of FIG. The injection slit 112 extends from the main flow path 111 in the direction opposite to the transport direction, and injects gas from the end of the injection slit 112 opposite to the main flow path 111 side (that is, the tip of the injection slit 112). Therefore, the gas can be injected from the tip of the injection slit 112 toward the second recovery path 81 (toward the upstream side in the transport direction).
The air knife 110 is fixed to, for example, a lower end portion on the front surface of the second recovery path constituent wall 82, and injects gas between the lower end 82 a of the second recovery path constituent wall 82 and one surface 11 of the work 10. It has become like.
The injection slit 112 is arranged so as to be inclined downward to the left in FIG. 9, and the height position of the tip end (left end and lower end) of the injection slit 112 is set to the same height position as the lower end 82a.
Gas is supplied to the main flow path 111 from a gas supply source (not shown). This gas supply source may be the same as the gas supply source that supplies the gas to the gas front chamber 31 via the gas introduction unit 91, or may be another gas supply source.
The gas supplied to the main flow path 111 is introduced into the injection slit 112 and is injected from the tip of the injection slit 112.

According to the present embodiment, since the etching apparatus 100 is provided with the air knife 110, of the etching liquid discharged from the etching liquid discharge port 43 and adhering to one surface 11 of the work 10, the upstream side of the discharge head 60. The etching solution that could not be recovered by the first recovery path 71 and the second recovery path 81 on the downstream side and was once conveyed to the downstream side of the second recovery path 81 is pushed back to the second recovery path 81 side, and the second recovery path 81 is used. 2 The recovery path 81 can be used for more reliable recovery.
Therefore, since the residue of the etching solution on one surface 11 of the work 10 after passing through the etching unit 90 can be suppressed, the one surface 11 of the work 10 after passing through the etching unit 90 is made into a drier state. be able to. As a result, it is possible to prevent the etching solution from adhering to the rollers (roller 21 shown in FIG. 1) arranged on the downstream side of the etching unit 90.

[Fifth Embodiment]
Next, the etching apparatus 100 according to the fifth embodiment will be described with reference to FIG.
The etching apparatus 100 according to the present embodiment is different from the etching apparatus 100 according to the third embodiment in the following points, and is different from the etching apparatus 100 according to the third embodiment in other respects. It is configured in the same way.

As shown in FIG. 10, the etching apparatus 100 according to the present embodiment is arranged at a position on the downstream side of the second recovery path 81 in the transport direction of the work 10, and injects gas toward the second recovery path 81. It is equipped with an air knife 110. That is, the air knife 110 injects gas toward the upstream side in the transport direction.

The structure of the air knife 110 is the same as that of the fourth embodiment.
That is, the air knife 110 includes, for example, a main flow path 111 extending in the depth direction of FIG. 10 and a slit-shaped injection slit 112 communicating with the main flow path 111, from the tip of the injection slit 112. The gas can be injected toward the second recovery path 81.
The air knife 110 is fixed to, for example, the lower surface of the front end portion of the second recovery path constituent wall 82, and is a gas between the curved surface facing portion 82b of the second recovery path constituent wall 82 and one surface 11 of the work 10. Is designed to be sprayed.
The injection slit 112 is arranged so as to be inclined upward to the left in FIG. The distance between the tip of the injection slit 112 and the peripheral surface 25a is set to be the same as the distance between the curved surface facing portion 82b and the peripheral surface 25a.

Also in this embodiment, since the etching apparatus 100 is provided with the air knife 110, among the etching liquids discharged from the etching liquid discharge port 43 and adhering to one surface 11 of the work 10, the upstream side of the discharge head 60 and the etching liquid The etching solution that could not be recovered by the first recovery path 71 and the second recovery path 81 on the downstream side and was once conveyed to the downstream side of the second recovery path 81 is pushed back to the second recovery path 81 side, and the second recovery path 81 is used. It can be recovered more reliably by the recovery path 81.
Therefore, since the residue of the etching solution on one surface 11 of the work 10 after passing through the etching unit 90 can be suppressed, the one surface 11 of the work 10 after passing through the etching unit 90 is made into a drier state. be able to. As a result, it is possible to prevent the etching solution from adhering to the rollers arranged on the downstream side of the etching unit 90.

[Sixth Embodiment]
Next, the etching apparatus 100 according to the sixth embodiment will be described with reference to FIGS. 11 and 12.
The etching apparatus 100 according to the present embodiment is different from the etching apparatus 100 according to the first embodiment in the following points, and is different from the etching apparatus 100 according to the first embodiment in other respects. It is configured in the same way.

In the first embodiment described above, an example of injecting gas while ejecting the etching solution from the ejection head 60 has been described, but in the case of the present embodiment, only the etching solution of the etching solution and the gas is worked from the ejection head 60. Discharge to 10.
Therefore, as shown in FIG. 11, the etching unit 90 does not have a gas front chamber 31, a gas supply path 32, a gas injection port 33, and the like.
Further, as shown in FIG. 12, the etching apparatus 100 does not have a blower 34, a filter 35, and a gas introduction unit 91.

In the case of the present embodiment, the etching solution front chamber 41, the etching solution supply path 42, and the etching solution discharge port 43 are configured and configured in the same manner as the gas front chamber 31, the gas supply path 32, and the gas injection port 33 in the first embodiment. Have been placed.

Therefore, in the case of the present embodiment, the etching apparatus 100 is configured to discharge the etching liquid from the etching liquid discharge port 43 in a direction orthogonal to one surface 11 of the work 10.
Therefore, also in the case of the present embodiment, since the etching solution can be vigorously supplied to one surface 11 of the work 10, the progress of etching in the direction perpendicular to the surface of the work 10 can be easily promoted. Therefore, since a good etching factor can be realized, it is possible to easily perform etching of a finer pattern.

Here, the fact that the ejection direction of the etching solution from the etching solution ejection port 43 is orthogonal to one surface 11 of the work 10 means that the ejection direction is substantially orthogonal to one surface 11. For example, the angle between the discharge direction and one surface 11 is preferably 90 degrees ± 10 degrees or less, and the angle between the discharge direction and one surface 11 is within ± 5 degrees. Is more preferable.

The etching solution supply path 42 includes a first portion 42a, a second portion 42b, and a third portion 42c in order from the side far from the etching liquid discharge port 43.
Of these, the flow path width of the second portion 42b (the flow path width in the left-right direction in FIG. 11, that is, the flow path width in the transport direction) is smaller than the flow path width of the first portion 42a, and the flow path width of the third portion 42c is the second. It is even smaller than the flow path width of the two portions 42b.
That is, in the width direction of the etching solution discharge port 43 orthogonal to the longitudinal direction of the etching solution discharge port 43, the dimension of the lumen region of the etching solution supply path 42 is gradually reduced toward the downstream side. ..
Therefore, the etching solution can be vigorously supplied from one surface 11 of the work 10.
The shapes and arrangements of the first portion 42a, the second portion 42b, and the third portion 42c are the same as the shapes and arrangements of the first portion 32a, the second portion 32b, and the third portion 32c in the first embodiment.

Also in the case of this embodiment, the facing distance between each part of the facing surface 61 of the discharge head 60 and the support surface 51a of the suction plate 51 is equal.
That is, the etching apparatus 100 includes a discharge head 60 having an etching solution discharge port 43, the transport unit has a support surface 51a that supports the work 10 on the back surface 12 with respect to one surface 11, and the discharge head 60 has a support surface 51a. It has a facing surface 61 facing the support surface 51a, and the distance between each portion of the facing surface 61 and the support surface 51a is equal.

Although each embodiment has been described above with reference to the drawings, these are examples of the present invention, and various configurations other than the above can be adopted.

The posture of the work 10 conveyed at a position facing the etching solution discharge port 43 is not limited to a horizontal posture, and may be, for example, a vertical posture or an inclined posture.
Further, the injection direction of the gas from the gas injection port 33 and the ejection direction of the etching solution from the etching solution discharge port 43 are not limited to the direction having the downward component, and may be, for example, the horizontal direction.

Further, the above embodiments can be combined as long as the contents do not conflict with each other.

This embodiment includes the following technical ideas.
(1) An etching apparatus for supplying an etching solution to one surface of a sheet-shaped workpiece to be conveyed to etch the workpiece.
A transport unit that transports the work in a predetermined transport direction,
The etching solution discharge port for discharging the etching solution and the etching solution discharge port
Equipped with
The etching solution discharge port is an etching apparatus having a long slit shape in the width direction of the work orthogonal to the transport direction and continuously extending between both ends in the width direction of the work. ..
(2) It is arranged independently of the etching solution discharge port in the vicinity of the etching solution discharge port on the downstream side or the upstream side in the transport direction from the etching solution discharge port, and is gas on one surface of the work. Equipped with a gas injection port to inject
The etching apparatus according to (1), wherein the gas injection port has a long slit shape in the width direction of the work and continuously extends between both ends in the width direction of the work.
(3) The etching apparatus according to (2), wherein the gas is injected from the gas injection port in a first direction orthogonal to the one surface of the work.
(4) The etching apparatus according to (3), wherein the second direction, which is the ejection direction of the etching solution from the etching solution ejection port, is a direction intersecting with the first direction.
(5) An etching solution supply path for supplying the etching solution to the etching solution discharge port, and an etching solution supply path.
A gas supply path for supplying gas to the gas injection port and
Equipped with
The etching solution discharge port is open at the downstream end of the etching solution supply path.
The front gas injection port is open at the downstream end of the gas supply path, and the front gas injection port is open.
In a cross section cut along a plane orthogonal to the one surface and along the transport direction, the extension line of the gas supply path and the extension line of the etching solution supply path are attached to the one surface of the work. The etching apparatus according to any one of (2) to (4), which intersects before reaching.
(6) A gas supply path for supplying gas to the gas injection port is provided.
The front gas injection port is open at the downstream end of the gas supply path, and the front gas injection port is open.
In the width direction of the gas injection port orthogonal to the longitudinal direction of the gas injection port, the dimension of the lumen region of the gas supply path is gradually reduced toward the downstream side (2). The etching apparatus according to any one of 5).
(7) The transport unit has a support surface that supports the work on the back surface with respect to one surface.
The etching apparatus according to any one of (2) to (6), wherein the distance from the gas injection port to the support surface and the distance from the etching solution discharge port to the support surface are equal to each other.
(8) Further provided with a discharge head having the gas injection port and the etching solution discharge port.
The discharge head has a facing surface facing the supporting surface.
The facing distance between each part of the facing surface and the supporting surface is equal.
The etching apparatus according to (7), wherein the gas injection port and the etching solution discharge port are opened independently of each other on the facing surface.
(9) The etching apparatus according to (1), wherein the etching solution is discharged from the etching solution ejection port in a direction orthogonal to the one surface of the work.
(10) The etching solution discharge port is provided with an etching solution supply path for supplying the etching solution.
The etching solution discharge port is open at the downstream end of the etching solution supply path.
In the width direction of the etching solution discharge port orthogonal to the longitudinal direction of the etching solution discharge port, the dimension of the lumen region of the etching solution supply path is gradually reduced toward the downstream side (9). ). The etching apparatus.
(11) A discharge head having the etching solution discharge port is further provided.
The transport portion has a support surface that supports the work on the back surface with respect to one surface.
The discharge head has a facing surface facing the supporting surface.
The etching apparatus according to (9) or (10), wherein the facing distance between each part of the facing surface and the supporting surface is equal.
(12) The etching apparatus according to (8) or (11), wherein the support surface and the facing surface are each planar, and the supporting surface and the facing surface face each other in parallel.
(13) The transport portion is a cylindrical roller.
The support surface is the peripheral surface of the roller.
The etching apparatus according to (8) or (11), wherein the facing surface is a concave curved surface along the peripheral surface of the roller.
(14) The item according to any one of (8), (11), (12) or (13), wherein the dimension of the facing surface in the transport direction is larger than the facing distance between the facing surface and the supporting surface. Etching device.
(15) A discharge head having the etching solution discharge port and
A first recovery path, which is arranged at a position on the upstream side of the discharge head in the transport direction and sucks and collects the etching liquid discharged from the etching liquid discharge port.
A second recovery path, which is arranged at a position on the downstream side of the discharge head in the transport direction and sucks and collects the etching liquid discharged from the etching liquid discharge port.
The etching apparatus according to any one of (1) to (14).

10 Work 11 One side 12 Back side 20 Rollers (constituting a transport unit)
21 Roller (Contains a transport unit)
25 Roller (Contains the transport section)
25a Circumferential surface (support surface)
31 Gas front chamber 32 Gas supply path 32a 1st part 32b 2nd part 32c 3rd part 33 Gas injection port 34 Blower 35 Filter 41 Etching liquid front chamber 42 Etching liquid supply path 42a 1st part 42b 2nd part 42c 3rd part 43 Etching liquid discharge port 44 Liquid tank 45 Pump 46 Valve 47 Flow controller 48 Check valve 51 Suction plate (constituting a transport unit)
51a Support surface 52 Suction box (constituting a transport section)
52a Negative pressure chamber 60 Discharge head 61 Facing surface 61a First part 61b Second part 61c Third part 71 First recovery path 72 First recovery path configuration wall 72a Lower end 72b Curved facing part 72c Upper end 73 Suction source communication part 74 Inertia Dust collection drain filter box 75 Filter 76 Blower 77 Filter 81 Second collection path 82 Second collection path configuration Wall 82a Lower end 82b Curved facing part 82c Upper end 83 Suction source communication part 90 Etching unit 91 Gas introduction part 92 Etching liquid introduction part 93 Discharge section 100 Etching device 110 Air knife 110a Bottom surface 110b Facing surface 111 Main flow path 112 Injection slit

Claims (12)

An etching device that supplies an etching solution to one surface of a sheet-shaped workpiece to be conveyed to etch the workpiece.
A transport unit that transports the work in a predetermined transport direction,
The etching solution discharge port for discharging the etching solution and the etching solution discharge port
Equipped with
The etching solution discharge port has a long slit shape in the width direction of the work orthogonal to the transport direction, and continuously extends between both ends in the width direction of the work.
It is arranged independently of the etching solution discharge port in the vicinity of the etching solution discharge port on the downstream side or the upstream side of the etching solution discharge port in the transport direction, and injects gas onto the one surface of the work. Equipped with a gas injection port,
The gas injection port has a long slit shape in the width direction of the work, and continuously extends between both ends in the width direction of the work.
The gas is injected from the gas injection port in a first direction orthogonal to the one surface of the work.
An etching apparatus whose second direction, which is the ejection direction of the etching solution from the etching solution ejection port, is a direction intersecting with the first direction. An etching device that supplies an etching solution to one surface of a sheet-shaped workpiece to be conveyed to etch the workpiece.
A transport unit that transports the work in a predetermined transport direction,
The etching solution discharge port for discharging the etching solution and the etching solution discharge port
Equipped with
The etching solution discharge port has a long slit shape in the width direction of the work orthogonal to the transport direction, and continuously extends between both ends in the width direction of the work.
It is arranged independently of the etching solution discharge port in the vicinity of the etching solution discharge port on the downstream side or the upstream side of the etching solution discharge port in the transport direction, and injects gas onto the one surface of the work. Equipped with a gas injection port,
The gas injection port has a long slit shape in the width direction of the work, and continuously extends between both ends in the width direction of the work.
The etching device
An etching solution supply path for supplying the etching solution to the etching solution discharge port, and an etching solution supply path.
A gas supply path for supplying gas to the gas injection port and
Further prepare
The etching solution discharge port is open at the downstream end of the etching solution supply path.
The front gas injection port is open at the downstream end of the gas supply path, and the front gas injection port is open.
In a cross section cut along a plane orthogonal to the one surface and along the transport direction, the extension line of the gas supply path and the extension line of the etching solution supply path are attached to the one surface of the work. Etching equipment that intersects before arrival. An etching device that supplies an etching solution to one surface of a sheet-shaped workpiece to be conveyed to etch the workpiece.
A transport unit that transports the work in a predetermined transport direction,
The etching solution discharge port for discharging the etching solution and the etching solution discharge port
Equipped with
The etching solution discharge port has a long slit shape in the width direction of the work orthogonal to the transport direction, and continuously extends between both ends in the width direction of the work.
It is arranged independently of the etching solution discharge port in the vicinity of the etching solution discharge port on the downstream side or the upstream side of the etching solution discharge port in the transport direction, and injects gas onto the one surface of the work. Equipped with a gas injection port,
The gas injection port has a long slit shape in the width direction of the work, and continuously extends between both ends in the width direction of the work.
A gas supply path for supplying gas to the gas injection port is provided.
The front gas injection port is open at the downstream end of the gas supply path, and the front gas injection port is open.
An etching apparatus in which the dimension of the lumen region of the gas supply path is gradually reduced toward the downstream side in the width direction of the gas injection port orthogonal to the longitudinal direction of the gas injection port. An etching device that supplies an etching solution to one surface of a sheet-shaped workpiece to be conveyed to etch the workpiece.
A transport unit that transports the work in a predetermined transport direction,
The etching solution discharge port for discharging the etching solution and the etching solution discharge port
Equipped with
The etching solution discharge port has a long slit shape in the width direction of the work perpendicular to the transport direction, and continuously extends between both ends in the width direction of the work.
It is arranged independently of the etching solution discharge port in the vicinity of the etching solution discharge port on the downstream side or the upstream side of the etching solution discharge port in the transport direction, and injects gas onto the one surface of the work. Equipped with a gas injection port,
The gas injection port has a long slit shape in the width direction of the work, and continuously extends between both ends in the width direction of the work.
The transport portion has a support surface that supports the work on the back surface with respect to one surface.
An etching apparatus in which the distance from the gas injection port to the support surface and the distance from the etching solution discharge port to the support surface are equal to each other. A discharge head having the gas injection port and the etching solution discharge port is further provided.
The discharge head has a facing surface facing the supporting surface.
The facing distance between each part of the facing surface and the supporting surface is equal.
The etching apparatus according to claim 4, wherein the gas injection port and the etching solution discharge port are opened independently of each other on the facing surface. The etching apparatus according to claim 5, wherein the support surface and the facing surface are each planar, and the supporting surface and the facing surface face each other in parallel. The transport portion is a cylindrical roller, and is
The support surface is the peripheral surface of the roller.
The etching apparatus according to claim 5, wherein the facing surface is a concave curved surface along the peripheral surface of the roller. The etching apparatus according to any one of claims 2 to 7, wherein the gas is injected from the gas injection port in a first direction orthogonal to the one surface of the work. An etching device that supplies an etching solution to one surface of a sheet-shaped workpiece to be conveyed to etch the workpiece.
A transport unit that transports the work in a predetermined transport direction,
The etching solution discharge port for discharging the etching solution and the etching solution discharge port
Equipped with
The etching solution discharge port has a long slit shape in the width direction of the work orthogonal to the transport direction, and continuously extends between both ends in the width direction of the work.
The etching solution is discharged from the etching solution ejection port in a direction orthogonal to the one surface of the work.
The etching apparatus further includes a discharge head having the etching solution discharge port.
The transport portion has a support surface that supports the work on the back surface with respect to one surface.
The discharge head has a facing surface facing the supporting surface.
The support surface and the facing surface are each planar, and the support surface and the facing surface face each other in parallel.
An etching apparatus in which the facing distance between each part of the facing surface and the supporting surface is equal. The etching solution discharge port is provided with an etching solution supply path for supplying the etching solution.
The etching solution discharge port is open at the downstream end of the etching solution supply path.
Claim that the dimension of the lumen region of the etching solution supply path is gradually reduced toward the downstream side in the width direction of the etching solution ejection port orthogonal to the longitudinal direction of the etching solution ejection port. 9. The etching apparatus according to 9. The etching apparatus according to any one of claims 5, 7 or 9, wherein the size of the facing surface in the transport direction is larger than the facing distance between the facing surface and the supporting surface. A discharge head having the etching solution discharge port and
A first recovery path, which is arranged at a position on the upstream side of the discharge head in the transport direction and sucks and collects the etching liquid discharged from the etching liquid discharge port.
A second recovery path, which is arranged at a position on the downstream side of the discharge head in the transport direction and sucks and collects the etching liquid discharged from the etching liquid discharge port.
The etching apparatus according to any one of claims 1 to 11.

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