JP7037372B2 - 成膜装置および成膜方法 - Google Patents
成膜装置および成膜方法 Download PDFInfo
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- JP7037372B2 JP7037372B2 JP2018005160A JP2018005160A JP7037372B2 JP 7037372 B2 JP7037372 B2 JP 7037372B2 JP 2018005160 A JP2018005160 A JP 2018005160A JP 2018005160 A JP2018005160 A JP 2018005160A JP 7037372 B2 JP7037372 B2 JP 7037372B2
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- 230000005855 radiation Effects 0.000 claims description 131
- 230000008569 process Effects 0.000 claims description 105
- 230000012010 growth Effects 0.000 claims description 94
- 239000000758 substrate Substances 0.000 claims description 76
- 230000003287 optical effect Effects 0.000 claims description 73
- 239000010409 thin film Substances 0.000 claims description 73
- 238000012937 correction Methods 0.000 claims description 22
- 230000000694 effects Effects 0.000 claims description 15
- 230000007613 environmental effect Effects 0.000 claims description 14
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- 235000012431 wafers Nutrition 0.000 description 160
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- 238000005755 formation reaction Methods 0.000 description 68
- 239000007789 gas Substances 0.000 description 59
- 238000002834 transmittance Methods 0.000 description 57
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- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 7
- 238000009529 body temperature measurement Methods 0.000 description 7
- 238000004364 calculation method Methods 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000001276 controlling effect Effects 0.000 description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 4
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- 230000002596 correlated effect Effects 0.000 description 2
- 238000010574 gas phase reaction Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 230000005457 Black-body radiation Effects 0.000 description 1
- -1 InGaN or AlGaN Chemical class 0.000 description 1
- 238000004616 Pyrometry Methods 0.000 description 1
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- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
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- 239000011368 organic material Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Images
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- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW107107295A TWI729274B (zh) | 2017-03-28 | 2018-03-05 | 成膜裝置與成膜方法 |
| US15/937,275 US20180286719A1 (en) | 2017-03-28 | 2018-03-27 | Film forming apparatus and film forming method |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017063076 | 2017-03-28 | ||
| JP2017063076 | 2017-03-28 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018166204A JP2018166204A (ja) | 2018-10-25 |
| JP2018166204A5 JP2018166204A5 (enExample) | 2021-01-14 |
| JP7037372B2 true JP7037372B2 (ja) | 2022-03-16 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018005160A Active JP7037372B2 (ja) | 2017-03-28 | 2018-01-16 | 成膜装置および成膜方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7037372B2 (enExample) |
| TW (1) | TWI729274B (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102737498B1 (ko) | 2019-12-13 | 2024-12-04 | 삼성전자주식회사 | 비-접촉식 온도 센서를 가진 공정 설비 |
| DE102020126597A1 (de) * | 2020-10-09 | 2022-04-14 | Aixtron Se | Verfahren zur emissivitätskorrigierten Pyrometrie |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003106902A (ja) | 2001-09-27 | 2003-04-09 | Toshiba Corp | 非接触温度測定方法及びその装置 |
| JP2016186960A (ja) | 2015-03-27 | 2016-10-27 | 株式会社ニューフレアテクノロジー | 成膜装置及び温度測定方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6279396B2 (ja) * | 2014-05-12 | 2018-02-14 | 株式会社ニューフレアテクノロジー | 気相成長方法及び気相成長装置 |
| JP6430337B2 (ja) * | 2015-07-06 | 2018-11-28 | 株式会社ニューフレアテクノロジー | 気相成長方法および気相成長装置 |
-
2018
- 2018-01-16 JP JP2018005160A patent/JP7037372B2/ja active Active
- 2018-03-05 TW TW107107295A patent/TWI729274B/zh active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003106902A (ja) | 2001-09-27 | 2003-04-09 | Toshiba Corp | 非接触温度測定方法及びその装置 |
| JP2016186960A (ja) | 2015-03-27 | 2016-10-27 | 株式会社ニューフレアテクノロジー | 成膜装置及び温度測定方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201837228A (zh) | 2018-10-16 |
| TWI729274B (zh) | 2021-06-01 |
| JP2018166204A (ja) | 2018-10-25 |
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