JP2016186960A - 成膜装置及び温度測定方法 - Google Patents
成膜装置及び温度測定方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000009529 body temperature measurement Methods 0.000 title abstract description 13
- 230000008021 deposition Effects 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 claims abstract description 196
- 230000005855 radiation Effects 0.000 claims abstract description 149
- 238000005259 measurement Methods 0.000 claims abstract description 88
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 230000008569 process Effects 0.000 claims abstract description 12
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 230000006866 deterioration Effects 0.000 abstract 1
- 238000007599 discharging Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 86
- 239000007789 gas Substances 0.000 description 41
- 230000015572 biosynthetic process Effects 0.000 description 39
- 230000003287 optical effect Effects 0.000 description 32
- 239000010409 thin film Substances 0.000 description 19
- 238000009826 distribution Methods 0.000 description 13
- 239000013307 optical fiber Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 230000009471 action Effects 0.000 description 9
- 230000008859 change Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 230000007423 decrease Effects 0.000 description 8
- 239000002994 raw material Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000005457 Black-body radiation Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
- G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
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- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
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- G01J5/0846—Optical arrangements having multiple detectors for performing different types of detection, e.g. using radiometry and reflectometry channels
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- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
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- G01J5/0896—Optical arrangements using a light source, e.g. for illuminating a surface
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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Abstract
【解決手段】実施形態に係る成膜装置1は、基板Wを支持する支持部と、支持部を介して基板Wの中心を回転中心とし基板Wを面内方向に回転させる回転部と、基板W上にプロセスガスを供給するガス供給部と、排気ガスを排出する排気部と、基板Wを加熱する加熱部と、基板Wの表面の温度を測定する放射温度計10とを備える。この放射温度計10は、基板Wの表面に照射される照射光の光源10aと、基板Wの表面における回転中心から所定距離の第1の測定領域からの反射光L1aを受光する第1の受光部10fと、基板Wの表面における回転中心から前記所定距離で基板Wの回転方向に延伸した第2の測定領域からの熱輻射光L2を受光する第2の受光部10fとを具備する。
【選択図】図2
Description
第1の実施形態について図1乃至図8を参照して説明する。
第2の実施形態について図9を参照して説明する。第2の実施形態では、第1の実施形態との相違点(放射温度計10の構造)について説明し、その他の説明は省略する。
前述の実施形態においては、MOCVDやMBEなどでの成膜を主な適用例として挙げているが、成膜に伴う基板の温度変化が生ずる可能性があれば、MOCVDやMBEに限るものではなく、スパッタや蒸着などの手法にも適用可能である。また、前述の放射温度計10の構成については、図2や図7に示すものは例示であり、この構成要素や構成方法等にさまざまな変更を加えることが可能である。
2 チャンバ
2a 光透過窓
3 ガス供給部
3a ガス貯留部
3b ガス管
3c ガスバルブ
4 原料放出部
4a ガス供給流路
4b ガス吐出孔
5 サセプタ
5a 開口部
6 回転部
6a 円筒部
6b 回転体
6c シャフト
7 ヒータ
7a 配線
8 ガス排出部
9 排気機構
9a ガス排気流路
9b 排気バルブ
9c 真空ポンプ
10 放射温度計
10a 光源
10b ハーフミラー
10c レンズ
10d 光学フィルタ
10d1 光学フィルタ
10d2 光学フィルタ
10e 絞り
10f 受光部
10f1 受光部
10f2 受光部
10g 算出部
10j 集光部品
10k 光ファイバ
L1 照射光
L1a 反射光
L2 熱輻射光
W 成膜対象物
Wa 成膜対象面
Claims (5)
- 基板を支持する支持部と、
前記支持部を介して前記基板の中心を回転中心とし前記基板を面内方向に回転させる回転部と、
前記基板上にプロセスガスを供給するガス供給部と、
排気ガスを排出する排気部と、
前記基板を加熱する加熱部と、
前記基板の表面の温度を測定する放射温度計と、
を備え、
前記放射温度計は、
前記基板の表面に照射される照射光の光源と、
前記基板の表面における前記回転中心から所定距離の第1の測定領域からの反射光を受光する第1の受光部と、
前記基板の表面における前記回転中心から前記所定距離で前記基板の回転方向に延伸した第2の測定領域からの熱輻射光を受光する第2の受光部と、
を具備することを特徴とする成膜装置。 - 前記第1の測定領域における前記基板の回転方向に直交する方向の長さと前記第2の測定領域における前記基板の回転方向に直交する方向の長さは等しいことを特徴とする請求項1に記載の成膜装置。
- 前記第1の測定領域は前記第2の測定領域内に存在することを特徴とする請求項1又は請求項2に記載の成膜装置。
- 前記第1の測定領域および前記第2の測定領域の少なくとも一部は重ならないように設定されていることを特徴とする請求項1又は請求項2に記載の成膜装置。
- 基板の中心を回転中心とし前記基板を回転させて加熱しつつ、前記基板の表面にプロセスガスを供給する工程と、
前記基板の表面に光を照射し、前記基板の表面における前記回転中心から所定距離の第1の測定領域からの反射光を測定する工程と、
前記基板の表面における前記回転中心から前記所定距離で前記基板の回転方向に延伸した第2の測定領域からの熱輻射光を測定する工程と、
を有することを特徴とする温度測定方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2015065729A JP6479525B2 (ja) | 2015-03-27 | 2015-03-27 | 成膜装置及び温度測定方法 |
US15/071,909 US10151637B2 (en) | 2015-03-27 | 2016-03-16 | Film forming apparatus and thermometry method |
CN201610183643.3A CN106011787B (zh) | 2015-03-27 | 2016-03-28 | 成膜装置以及温度测量方法 |
KR1020160036773A KR101918952B1 (ko) | 2015-03-27 | 2016-03-28 | 성막 장치 및 온도 측정 방법 |
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JP2015065729A JP6479525B2 (ja) | 2015-03-27 | 2015-03-27 | 成膜装置及び温度測定方法 |
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JP6479525B2 JP6479525B2 (ja) | 2019-03-06 |
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CN (1) | CN106011787B (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017057696A1 (ja) * | 2015-10-02 | 2017-04-06 | 株式会社ニューフレアテクノロジー | 位置ずれ検出装置、気相成長装置および位置ずれ検出方法 |
WO2018135422A1 (ja) * | 2017-01-17 | 2018-07-26 | 国立大学法人名古屋大学 | 気相成長装置 |
JP2018151354A (ja) * | 2017-03-15 | 2018-09-27 | Jfeスチール株式会社 | 放射温度測定装置及び放射温度測定方法 |
JP2018166204A (ja) * | 2017-03-28 | 2018-10-25 | 株式会社ニューフレアテクノロジー | 成膜装置および成膜方法 |
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CN106011787B (zh) | 2018-11-09 |
JP6479525B2 (ja) | 2019-03-06 |
US20160282188A1 (en) | 2016-09-29 |
KR20160115856A (ko) | 2016-10-06 |
KR101918952B1 (ko) | 2018-11-15 |
CN106011787A (zh) | 2016-10-12 |
US10151637B2 (en) | 2018-12-11 |
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