JP7036604B2 - 積層圧電セラミック部品及び圧電デバイス - Google Patents

積層圧電セラミック部品及び圧電デバイス Download PDF

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Publication number
JP7036604B2
JP7036604B2 JP2018013962A JP2018013962A JP7036604B2 JP 7036604 B2 JP7036604 B2 JP 7036604B2 JP 2018013962 A JP2018013962 A JP 2018013962A JP 2018013962 A JP2018013962 A JP 2018013962A JP 7036604 B2 JP7036604 B2 JP 7036604B2
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Japan
Prior art keywords
internal electrode
piezoelectric ceramic
electrode
face
ceramic body
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JP2018013962A
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English (en)
Japanese (ja)
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JP2019134035A (ja
JP2019134035A5 (enExample
Inventor
隆幸 後藤
寛之 清水
純明 岸本
幸宏 小西
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Taiyo Yuden Co Ltd
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Taiyo Yuden Co Ltd
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Publication date
Application filed by Taiyo Yuden Co Ltd filed Critical Taiyo Yuden Co Ltd
Priority to JP2018013962A priority Critical patent/JP7036604B2/ja
Priority to US16/258,376 priority patent/US11362261B2/en
Priority to CN201910090497.3A priority patent/CN110098316B/zh
Publication of JP2019134035A publication Critical patent/JP2019134035A/ja
Publication of JP2019134035A5 publication Critical patent/JP2019134035A5/ja
Application granted granted Critical
Publication of JP7036604B2 publication Critical patent/JP7036604B2/ja
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/85Piezoelectric or electrostrictive active materials
    • H10N30/853Ceramic compositions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/08Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/085Shaping or machining of piezoelectric or electrostrictive bodies by machining
    • H10N30/088Shaping or machining of piezoelectric or electrostrictive bodies by machining by cutting or dicing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/20Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/20Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/50Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/87Electrodes or interconnections, e.g. leads or terminals
    • H10N30/871Single-layered electrodes of multilayer piezoelectric or electrostrictive devices, e.g. internal electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/87Electrodes or interconnections, e.g. leads or terminals
    • H10N30/872Interconnections, e.g. connection electrodes of multilayer piezoelectric or electrostrictive devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/88Mounts; Supports; Enclosures; Casings
    • H10N30/883Additional insulation means preventing electrical, physical or chemical damage, e.g. protective coatings

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
JP2018013962A 2018-01-30 2018-01-30 積層圧電セラミック部品及び圧電デバイス Active JP7036604B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2018013962A JP7036604B2 (ja) 2018-01-30 2018-01-30 積層圧電セラミック部品及び圧電デバイス
US16/258,376 US11362261B2 (en) 2018-01-30 2019-01-25 Multi-layer piezoelectric ceramic component and piezoelectric device
CN201910090497.3A CN110098316B (zh) 2018-01-30 2019-01-30 层叠压电陶瓷部件和压电器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018013962A JP7036604B2 (ja) 2018-01-30 2018-01-30 積層圧電セラミック部品及び圧電デバイス

Publications (3)

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JP2019134035A JP2019134035A (ja) 2019-08-08
JP2019134035A5 JP2019134035A5 (enExample) 2021-02-04
JP7036604B2 true JP7036604B2 (ja) 2022-03-15

Family

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JP2018013962A Active JP7036604B2 (ja) 2018-01-30 2018-01-30 積層圧電セラミック部品及び圧電デバイス

Country Status (3)

Country Link
US (1) US11362261B2 (enExample)
JP (1) JP7036604B2 (enExample)
CN (1) CN110098316B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7128628B2 (ja) * 2018-01-30 2022-08-31 太陽誘電株式会社 積層圧電セラミック部品及び圧電デバイス

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001085753A (ja) 1999-09-16 2001-03-30 Murata Mfg Co Ltd 圧電アクチュエータ
JP2002094134A (ja) 2000-09-14 2002-03-29 Ngk Insulators Ltd 薄型積層圧電/電歪素子および同積層圧電/電歪素子の製造方法
JP2002280630A (ja) 2001-03-06 2002-09-27 Ceramtec Ag Innov Ceramic Eng 圧電セラミック多層アクチュエーターおよびその製造方法
WO2006087871A1 (ja) 2005-02-15 2006-08-24 Murata Manufacturing Co., Ltd. 積層型圧電素子
JP2007150200A (ja) 2005-11-30 2007-06-14 Murata Mfg Co Ltd 電子部品の製造方法
JP2011066308A (ja) 2009-09-18 2011-03-31 Tdk Corp セラミック電子部品およびその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61239682A (ja) * 1985-04-16 1986-10-24 Tohoku Metal Ind Ltd 積層型圧電バイモルフ素子の製造方法
JP3185226B2 (ja) * 1991-01-30 2001-07-09 株式会社村田製作所 圧電バイモルフ素子の駆動方法及び圧電バイモルフ素子
DE602004029076D1 (de) * 2003-10-27 2010-10-21 Kyocera Corp Mehrschichtiges piezoelektrisches bauelement
JP2007335485A (ja) * 2006-06-13 2007-12-27 Funai Electric Co Ltd 積層型圧電アクチュエータおよびその製造方法
JP5558577B2 (ja) 2011-10-03 2014-07-23 京セラ株式会社 圧電振動装置およびそれを用いた携帯端末

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001085753A (ja) 1999-09-16 2001-03-30 Murata Mfg Co Ltd 圧電アクチュエータ
JP2002094134A (ja) 2000-09-14 2002-03-29 Ngk Insulators Ltd 薄型積層圧電/電歪素子および同積層圧電/電歪素子の製造方法
JP2002280630A (ja) 2001-03-06 2002-09-27 Ceramtec Ag Innov Ceramic Eng 圧電セラミック多層アクチュエーターおよびその製造方法
WO2006087871A1 (ja) 2005-02-15 2006-08-24 Murata Manufacturing Co., Ltd. 積層型圧電素子
JP2007150200A (ja) 2005-11-30 2007-06-14 Murata Mfg Co Ltd 電子部品の製造方法
JP2011066308A (ja) 2009-09-18 2011-03-31 Tdk Corp セラミック電子部品およびその製造方法

Also Published As

Publication number Publication date
CN110098316A (zh) 2019-08-06
JP2019134035A (ja) 2019-08-08
US20190237656A1 (en) 2019-08-01
CN110098316B (zh) 2023-12-29
US11362261B2 (en) 2022-06-14

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