JP7034737B2 - 成膜装置および成膜方法 - Google Patents
成膜装置および成膜方法 Download PDFInfo
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- JP7034737B2 JP7034737B2 JP2018010281A JP2018010281A JP7034737B2 JP 7034737 B2 JP7034737 B2 JP 7034737B2 JP 2018010281 A JP2018010281 A JP 2018010281A JP 2018010281 A JP2018010281 A JP 2018010281A JP 7034737 B2 JP7034737 B2 JP 7034737B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Optics & Photonics (AREA)
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
Description
10 真空チャンバ
31 搬送ローラ(基板保持部)
51 スパッタカソード(カソード)
52,53 誘導結合アンテナ(高周波アンテナ)
56 ガス供給部
57 電源部
59 光学プローブ
512 ターゲット
515 磁石ユニット
521,531 導体(線状導体)
522,532 誘電体(誘電体層)
571 カソード電源
572 高周波電源
573 電流測定部
574 電圧測定部
S 基板
Claims (6)
- プラズマスパッタリングにより基板に成膜を行う成膜装置において、
真空チャンバと、
前記真空チャンバ内に設けられ、ターゲットを設置可能なカソードと、
前記真空チャンバ内で前記ターゲットの近傍に配置される高周波アンテナと、
前記真空チャンバ内で前記基板を前記ターゲットに対向させて保持する基板保持部と、
前記真空チャンバ内にスパッタガスを供給するガス供給部と、
前記カソードに所定のカソード電力を供給するカソード電源と、
前記高周波アンテナに高周波電力を供給して誘導結合プラズマを発生させる高周波電源と、
前記高周波アンテナと前記高周波電源との間に電気的に介挿されてインピーダンス整合を行う整合器と
を備え、
前記カソード電源は前記カソードに流れる電流を定電流制御しまたは前記カソードに与える電力を定電力制御し、
前記高周波電源は、前記カソードの電圧の計測値に基づき、前記計測値が大きくなると前記高周波アンテナに与える前記高周波電力が大きくなるように前記高周波電力の大きさを調整して、前記カソード電力を所定値に制御する成膜装置。 - 前記高周波アンテナは、巻き数が1周未満の線状導体を誘電体層で被覆した構造を有する請求項1に記載の成膜装置。
- 前記カソードがマグネトロンカソードである請求項1または2に記載の成膜装置。
- 前記高周波電源は、前記計測値が所定の適正範囲内となるように前記高周波電力を制御する請求項1ないし3のいずれかに記載の成膜装置。
- プラズマスパッタリングにより基板に成膜を行う成膜方法において、
真空チャンバ内に、ターゲットを有するカソードと、高周波アンテナと、前記基板とを配置する工程と、
前記真空チャンバ内にスパッタガスを供給する工程と、
電源部から、前記カソードに所定のカソード電力を供給するとともに、前記高周波アンテナに整合器を介して高周波電力を供給し誘導結合プラズマを発生させる工程と
を備え、
前記電源部が、前記カソードに流れる電流を定電流制御しまたは前記カソードに与える電力を定電力制御し、前記カソードの電圧の計測値に基づき、前記計測値が大きくなると前記高周波アンテナに与える前記高周波電力が大きくなるように前記高周波電力を制御する成膜方法。 - 前記電源部は、前記計測値が所定の適正範囲内となるように前記高周波電力を制御する請求項5に記載の成膜方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018010281A JP7034737B2 (ja) | 2018-01-25 | 2018-01-25 | 成膜装置および成膜方法 |
TW107142505A TWI696719B (zh) | 2018-01-25 | 2018-11-28 | 成膜裝置及成膜方法 |
KR1020180164834A KR102196274B1 (ko) | 2018-01-25 | 2018-12-19 | 성막 장치 및 성막 방법 |
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JP2018010281A JP7034737B2 (ja) | 2018-01-25 | 2018-01-25 | 成膜装置および成膜方法 |
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JP2019127621A JP2019127621A (ja) | 2019-08-01 |
JP7034737B2 true JP7034737B2 (ja) | 2022-03-14 |
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JP (1) | JP7034737B2 (ja) |
KR (1) | KR102196274B1 (ja) |
TW (1) | TWI696719B (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000212740A (ja) | 1999-01-19 | 2000-08-02 | Toshiba Corp | マグネトロンスパッタリング成膜装置及び方法 |
JP2012175001A (ja) | 2011-02-23 | 2012-09-10 | Toshiba Corp | 制御装置、プラズマ処理装置、及び制御方法 |
JP2014189827A (ja) | 2013-03-27 | 2014-10-06 | Dainippon Screen Mfg Co Ltd | 酸化アルミニウムの成膜方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009062568A (ja) | 2007-09-05 | 2009-03-26 | Tsuru Gakuen | マグネトロンスパッタリング成膜装置 |
US8133360B2 (en) * | 2007-12-20 | 2012-03-13 | Applied Materials, Inc. | Prediction and compensation of erosion in a magnetron sputtering target |
US8916034B2 (en) | 2008-08-28 | 2014-12-23 | Emd Corporation | Thin-film forming sputtering system |
JP5475506B2 (ja) | 2010-02-26 | 2014-04-16 | 株式会社イー・エム・ディー | スパッタリング薄膜形成装置 |
-
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- 2018-01-25 JP JP2018010281A patent/JP7034737B2/ja active Active
- 2018-11-28 TW TW107142505A patent/TWI696719B/zh active
- 2018-12-19 KR KR1020180164834A patent/KR102196274B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000212740A (ja) | 1999-01-19 | 2000-08-02 | Toshiba Corp | マグネトロンスパッタリング成膜装置及び方法 |
JP2012175001A (ja) | 2011-02-23 | 2012-09-10 | Toshiba Corp | 制御装置、プラズマ処理装置、及び制御方法 |
JP2014189827A (ja) | 2013-03-27 | 2014-10-06 | Dainippon Screen Mfg Co Ltd | 酸化アルミニウムの成膜方法 |
Also Published As
Publication number | Publication date |
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KR20190090689A (ko) | 2019-08-02 |
TW201940719A (zh) | 2019-10-16 |
JP2019127621A (ja) | 2019-08-01 |
KR102196274B1 (ko) | 2020-12-29 |
TWI696719B (zh) | 2020-06-21 |
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