JP7030846B2 - 短絡故障モードを有するパワー半導体モジュール - Google Patents

短絡故障モードを有するパワー半導体モジュール Download PDF

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JP7030846B2
JP7030846B2 JP2019561371A JP2019561371A JP7030846B2 JP 7030846 B2 JP7030846 B2 JP 7030846B2 JP 2019561371 A JP2019561371 A JP 2019561371A JP 2019561371 A JP2019561371 A JP 2019561371A JP 7030846 B2 JP7030846 B2 JP 7030846B2
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chip
semiconductor module
wide bandgap
power semiconductor
bandgap material
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JP2020505792A (ja
JP2020505792A5 (enExample
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リュー，チュンレイ
シュドラー，ユルゲン
ブレム，フランツィスカ
ラヒモ，ムナフ
シュタイマー，ペーター・カール
ドゥガル，フランク
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Hitachi Energy Ltd
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Hitachi Energy Switzerland AG
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48105—Connecting bonding areas at different heights
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H01L2224/48249—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item the bond pad protruding from the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L2224/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Inverter Devices (AREA)
  • Die Bonding (AREA)
  • Power Conversion In General (AREA)
JP2019561371A 2017-02-01 2018-02-01 短絡故障モードを有するパワー半導体モジュール Active JP7030846B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP17154197 2017-02-01
EP17154197.2 2017-02-01
PCT/EP2018/052559 WO2018141867A1 (en) 2017-02-01 2018-02-01 Power semiconductor module with short circuit failure mode

Publications (3)

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JP2020505792A JP2020505792A (ja) 2020-02-20
JP2020505792A5 JP2020505792A5 (enExample) 2021-03-11
JP7030846B2 true JP7030846B2 (ja) 2022-03-07

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JP2019561371A Active JP7030846B2 (ja) 2017-02-01 2018-02-01 短絡故障モードを有するパワー半導体モジュール

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US (1) US10872830B2 (enExample)
EP (1) EP3566246B1 (enExample)
JP (1) JP7030846B2 (enExample)
CN (1) CN110268517B (enExample)
WO (1) WO2018141867A1 (enExample)

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EP3577687B1 (en) * 2017-02-01 2020-10-07 ABB Power Grids Switzerland AG Power semiconductor device with active short circuit failure mode and method of controlling the same
EP3891790A1 (en) * 2018-12-07 2021-10-13 ABB Power Grids Switzerland AG Hybrid short circuit failure mode preform for power semiconductor devices
JP7142183B2 (ja) * 2019-07-09 2022-09-26 ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト 集積サージアレスタを有するパワー半導体モジュール
CN112216620A (zh) * 2019-07-09 2021-01-12 半导体元件工业有限责任公司 功率器件结构的预堆叠机械强度增强
US12489040B2 (en) 2022-09-06 2025-12-02 Infineon Technologies Austria Ag Semiconductor package with balanced impedance

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JP2006500774A (ja) 2002-09-27 2006-01-05 アーベーベー・リサーチ・リミテッド プレスパックパワー半導体モジュール
JP2014116478A (ja) 2012-12-11 2014-06-26 Meidensha Corp 半導体モジュール及び半導体モジュールの製造方法並びに電力変換装置
WO2016062426A1 (en) 2014-10-24 2016-04-28 Abb Technology Ag Semiconductor module and stack arrangement of semiconductor modules
WO2016165843A1 (en) 2015-04-13 2016-10-20 Abb Technology Ag Power electronics module
JP2016219532A (ja) 2015-05-18 2016-12-22 株式会社デンソー 半導体装置

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US7034345B2 (en) * 2003-03-27 2006-04-25 The Boeing Company High-power, integrated AC switch module with distributed array of hybrid devices
EP2528092A1 (en) * 2011-05-27 2012-11-28 ABB Research Ltd. Semiconductor device
EP2673803B1 (en) 2011-02-08 2021-04-14 ABB Power Grids Switzerland AG Power semiconductor module and method to produce a power semiconductor module
EP2503595A1 (en) 2011-02-18 2012-09-26 ABB Research Ltd. Power semiconductor module and method of manufacturing a power semiconductor module
EP2530711A1 (en) * 2011-05-30 2012-12-05 ABB Research Ltd. Power semiconductor arrangement
EP2729964B1 (en) * 2011-07-05 2019-03-20 ABB Schweiz AG Short-circuit failure mode with multiple device breakdown
JP5971263B2 (ja) * 2012-02-09 2016-08-17 富士電機株式会社 半導体装置
US20140185346A1 (en) * 2012-12-28 2014-07-03 Eaton Corporation Hybrid power devices and switching circuits for high power load sourcing applications
US9385111B2 (en) * 2013-11-22 2016-07-05 Infineon Technologies Austria Ag Electronic component with electronic chip between redistribution structure and mounting structure
WO2015176985A1 (en) * 2014-05-20 2015-11-26 Abb Technology Ag Semiconductor power module with low stray inductance
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JP6634945B2 (ja) * 2016-04-19 2020-01-22 株式会社デンソー 半導体モジュール
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JP6881238B2 (ja) * 2017-10-31 2021-06-02 三菱電機株式会社 半導体モジュール、その製造方法及び電力変換装置

Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
JP2006500774A (ja) 2002-09-27 2006-01-05 アーベーベー・リサーチ・リミテッド プレスパックパワー半導体モジュール
JP2014116478A (ja) 2012-12-11 2014-06-26 Meidensha Corp 半導体モジュール及び半導体モジュールの製造方法並びに電力変換装置
WO2016062426A1 (en) 2014-10-24 2016-04-28 Abb Technology Ag Semiconductor module and stack arrangement of semiconductor modules
WO2016165843A1 (en) 2015-04-13 2016-10-20 Abb Technology Ag Power electronics module
JP2016219532A (ja) 2015-05-18 2016-12-22 株式会社デンソー 半導体装置

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Publication number Publication date
EP3566246B1 (en) 2020-11-18
WO2018141867A1 (en) 2018-08-09
JP2020505792A (ja) 2020-02-20
CN110268517B (zh) 2023-03-21
US20190355634A1 (en) 2019-11-21
US10872830B2 (en) 2020-12-22
CN110268517A (zh) 2019-09-20
EP3566246A1 (en) 2019-11-13

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