JP7009027B2 - ウェーハの加工方法 - Google Patents

ウェーハの加工方法 Download PDF

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Publication number
JP7009027B2
JP7009027B2 JP2017172836A JP2017172836A JP7009027B2 JP 7009027 B2 JP7009027 B2 JP 7009027B2 JP 2017172836 A JP2017172836 A JP 2017172836A JP 2017172836 A JP2017172836 A JP 2017172836A JP 7009027 B2 JP7009027 B2 JP 7009027B2
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Japan
Prior art keywords
wafer
sealing material
cutting groove
sealing
alignment
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JP2017172836A
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English (en)
Japanese (ja)
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JP2019050249A (ja
Inventor
克彦 鈴木
祐人 伴
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Disco Corp
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Disco Corp
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Priority to JP2017172836A priority Critical patent/JP7009027B2/ja
Priority to KR1020180103486A priority patent/KR102581129B1/ko
Priority to CN201811035733.3A priority patent/CN109473349B/zh
Priority to TW107131418A priority patent/TWI797156B/zh
Priority to SG10201807743WA priority patent/SG10201807743WA/en
Priority to DE102018215246.2A priority patent/DE102018215246A1/de
Publication of JP2019050249A publication Critical patent/JP2019050249A/ja
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Publication of JP7009027B2 publication Critical patent/JP7009027B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0823—Devices involving rotation of the workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/30—Organic material
    • B23K2103/42—Plastics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
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    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
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    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
    • H—ELECTRICITY
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    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2017172836A 2017-09-08 2017-09-08 ウェーハの加工方法 Active JP7009027B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2017172836A JP7009027B2 (ja) 2017-09-08 2017-09-08 ウェーハの加工方法
KR1020180103486A KR102581129B1 (ko) 2017-09-08 2018-08-31 웨이퍼의 가공 방법
CN201811035733.3A CN109473349B (zh) 2017-09-08 2018-09-06 晶片的加工方法
TW107131418A TWI797156B (zh) 2017-09-08 2018-09-07 晶圓之加工方法
SG10201807743WA SG10201807743WA (en) 2017-09-08 2018-09-07 Wafer processing method
DE102018215246.2A DE102018215246A1 (de) 2017-09-08 2018-09-07 Bearbeitungsverfahren für einen Wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017172836A JP7009027B2 (ja) 2017-09-08 2017-09-08 ウェーハの加工方法

Publications (2)

Publication Number Publication Date
JP2019050249A JP2019050249A (ja) 2019-03-28
JP7009027B2 true JP7009027B2 (ja) 2022-01-25

Family

ID=65441979

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JP2017172836A Active JP7009027B2 (ja) 2017-09-08 2017-09-08 ウェーハの加工方法

Country Status (6)

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JP (1) JP7009027B2 (de)
KR (1) KR102581129B1 (de)
CN (1) CN109473349B (de)
DE (1) DE102018215246A1 (de)
SG (1) SG10201807743WA (de)
TW (1) TWI797156B (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102019204457B4 (de) 2019-03-29 2024-01-25 Disco Corporation Substratbearbeitungsverfahren
CN114309978B (zh) * 2021-12-27 2024-05-03 欣强电子（清远）有限公司 一种定深槽高速光模块产品加工方法及其加工装置

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JP2003327666A (ja) 2002-05-16 2003-11-19 Kyocera Chemical Corp エポキシ樹脂組成物および半導体封止装置
JP2005150523A (ja) 2003-11-18 2005-06-09 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2006052279A (ja) 2004-08-11 2006-02-23 Tokai Carbon Co Ltd 半導体封止材用カーボンブラック着色剤およびその製造方法
JP2007190596A (ja) 2006-01-20 2007-08-02 Seiko Epson Corp 基体の製造方法、フレキシブル回路基板、電気光学装置、電子機器
JP2009538538A (ja) 2006-05-25 2009-11-05 エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド 裏面ウェーハダイシング
WO2014156688A1 (ja) 2013-03-27 2014-10-02 浜松ホトニクス株式会社 レーザ加工装置及びレーザ加工方法
JP2015023078A (ja) 2013-07-17 2015-02-02 株式会社ディスコ ウエーハの加工方法
JP2017054888A (ja) 2015-09-08 2017-03-16 株式会社ディスコ ウエーハの加工方法
JP2017112269A (ja) 2015-12-17 2017-06-22 株式会社ディスコ ウエーハの加工方法

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JP2003165893A (ja) * 2001-11-30 2003-06-10 Shin Etsu Chem Co Ltd 半導体封止用エポキシ樹脂組成物及び半導体装置
JP2003321594A (ja) * 2002-04-26 2003-11-14 Hitachi Chem Co Ltd 封止用エポキシ樹脂成形材料及び電子部品装置
JP5948034B2 (ja) 2011-09-27 2016-07-06 株式会社ディスコ アライメント方法
JP2016015438A (ja) 2014-07-03 2016-01-28 株式会社ディスコ アライメント方法
JP6377514B2 (ja) * 2014-12-17 2018-08-22 株式会社ディスコ パッケージ基板の加工方法
JP2016166120A (ja) * 2015-03-06 2016-09-15 三星ダイヤモンド工業株式会社 積層基板の加工方法及びレーザ光による積層基板の加工装置
JP2017108089A (ja) * 2015-12-04 2017-06-15 株式会社東京精密 レーザ加工装置及びレーザ加工方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003327666A (ja) 2002-05-16 2003-11-19 Kyocera Chemical Corp エポキシ樹脂組成物および半導体封止装置
JP2005150523A (ja) 2003-11-18 2005-06-09 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2006052279A (ja) 2004-08-11 2006-02-23 Tokai Carbon Co Ltd 半導体封止材用カーボンブラック着色剤およびその製造方法
JP2007190596A (ja) 2006-01-20 2007-08-02 Seiko Epson Corp 基体の製造方法、フレキシブル回路基板、電気光学装置、電子機器
JP2009538538A (ja) 2006-05-25 2009-11-05 エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド 裏面ウェーハダイシング
WO2014156688A1 (ja) 2013-03-27 2014-10-02 浜松ホトニクス株式会社 レーザ加工装置及びレーザ加工方法
JP2015023078A (ja) 2013-07-17 2015-02-02 株式会社ディスコ ウエーハの加工方法
JP2017054888A (ja) 2015-09-08 2017-03-16 株式会社ディスコ ウエーハの加工方法
JP2017112269A (ja) 2015-12-17 2017-06-22 株式会社ディスコ ウエーハの加工方法

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JP2019050249A (ja) 2019-03-28
KR20190028302A (ko) 2019-03-18
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DE102018215246A1 (de) 2019-03-14
KR102581129B1 (ko) 2023-09-20

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