JP7008634B2 - アルキルアミンを用いたａ／ｍ／ｘ材料の製造方法 - Google Patents

アルキルアミンを用いたａ／ｍ／ｘ材料の製造方法 Download PDF

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JP7008634B2
JP7008634B2 JP2018546829A JP2018546829A JP7008634B2 JP 7008634 B2 JP7008634 B2 JP 7008634B2 JP 2018546829 A JP2018546829 A JP 2018546829A JP 2018546829 A JP2018546829 A JP 2018546829A JP 7008634 B2 JP7008634 B2 JP 7008634B2
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JP2019516232A (ja
JP2019516232A5 (https=
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ジェームズ スナイス，ヘンリー
ナヤク，パビトラ
ウェンジャー，バーナード
ノエル，ニキータ
ハビスレウティンガー，セベリン
ムーア，デビッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/656—Aromatic compounds comprising a hetero atom comprising two or more different heteroatoms per ring
    • H10K85/6565—Oxadiazole compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Photovoltaic Devices (AREA)
JP2018546829A 2016-03-09 2017-03-08 アルキルアミンを用いたａ／ｍ／ｘ材料の製造方法 Active JP7008634B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB1604050.3A GB201604050D0 (en) 2016-03-09 2016-03-09 A/M/X material production process with alkylamine
GB1604050.3 2016-03-09
PCT/GB2017/050623 WO2017153752A1 (en) 2016-03-09 2017-03-08 A/m/x material production process with alkylamine

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JP2019516232A JP2019516232A (ja) 2019-06-13
JP2019516232A5 JP2019516232A5 (https=) 2020-04-16
JP7008634B2 true JP7008634B2 (ja) 2022-02-10

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US (1) US10797255B2 (https=)
EP (1) EP3427290B1 (https=)
JP (1) JP7008634B2 (https=)
KR (1) KR102363283B1 (https=)
CN (1) CN108780759B (https=)
ES (1) ES2884327T3 (https=)
GB (1) GB201604050D0 (https=)
PL (1) PL3427290T3 (https=)
WO (1) WO2017153752A1 (https=)

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JP7304517B2 (ja) * 2018-07-10 2023-07-07 パナソニックＩｐマネジメント株式会社 太陽電池
GB201811538D0 (en) * 2018-07-13 2018-08-29 Univ Oxford Innovation Ltd Stabilised a/m/x materials
KR102800886B1 (ko) * 2018-08-23 2025-04-29 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 방법
GB201817166D0 (en) * 2018-10-22 2018-12-05 Univ Oxford Innovation Ltd Multi-junction device production process
GB201817167D0 (en) * 2018-10-22 2018-12-05 Univ Oxford Innovation Ltd Process for producing a layer with mixed solvent system
US12243740B2 (en) 2018-11-21 2025-03-04 Cubicpv Inc. Enhanced perovskite materials for photovoltaic devices
GB201820427D0 (en) 2018-12-14 2019-01-30 Univ Oxford Innovation Ltd Device interlayer
US11339058B2 (en) * 2018-12-14 2022-05-24 Alliance For Sustainable Energy, Llc Manufacturing of perovskite films
CN110048001A (zh) * 2019-04-01 2019-07-23 桂林理工大学 一种通过卤素替换工程来调节铋基有机-无机杂化材料形貌、带隙和稳定性的方法
JP7542224B2 (ja) * 2019-05-29 2024-08-30 パナソニックＩｐマネジメント株式会社 光電変換膜およびそれを用いた太陽電池、ならびに光電変換膜の製造方法
EP3977529A4 (en) * 2019-05-30 2023-07-05 Energy Materials Corporation METHOD FOR MAKING A HIGH-SPEED PEROVSKITE LAYER
CN110862232A (zh) * 2019-11-12 2020-03-06 宁波大学 一种硫基微晶玻璃材料及其制备方法
CN113929641B (zh) * 2020-07-14 2025-05-06 西安固能新材料科技有限公司 系列乙二铵三元晶态化合物及其制备方法以及作为含能材料的用途
WO2021207344A1 (en) * 2020-04-08 2021-10-14 The Trustees Of Princeton University Thermal management for perovskite electronic devices
US20210388009A1 (en) * 2020-06-10 2021-12-16 Nanyang Technological University Organic metal-halide perovskite precursor, process for production and use thereof
CN111883664B (zh) * 2020-06-30 2022-09-23 西安理工大学 一种双注入倍增型有机光电探测器及其制备方法
US11846886B2 (en) 2020-11-23 2023-12-19 International Business Machines Corporation Photoacid generator
US20240188407A1 (en) * 2021-04-06 2024-06-06 Alliance For Sustainable Energy, Llc Methods for purifying perovskite precursors and improved perovskites manufactured therefrom
KR102573246B1 (ko) * 2021-04-20 2023-09-01 한국과학기술원 할라이드 페로브스카이트 박막의 저온 용액 공정 제조를 위한 용매 및 이를 이용한 페로브스카이트 박막 제조 방법
WO2023047116A1 (en) 2021-09-22 2023-03-30 Oxford University Innovation Limited Perovskite production process
KR102761911B1 (ko) * 2022-09-21 2025-02-05 서울대학교산학협력단 탠덤 태양전지의 제조방법
CN117205950A (zh) * 2023-09-19 2023-12-12 浙江师范大学 一种水稳定型卤化物钙钛矿Cs2Pt0.25Sn0.75Br6光催化剂的制备及应用
WO2025135104A1 (ja) * 2023-12-22 2025-06-26 株式会社カネカ ペロブスカイト前駆体液、太陽電池製造方法および太陽電池
CN118382342B (zh) * 2024-06-19 2024-10-01 天合光能股份有限公司 钙钛矿吸光层的制备方法、钙钛矿太阳能电池、光伏组件和光伏系统

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EP3427290A1 (en) 2019-01-16
KR20180122393A (ko) 2018-11-12
CN108780759B (zh) 2023-08-08
GB201604050D0 (en) 2016-04-20
CN108780759A (zh) 2018-11-09
KR102363283B1 (ko) 2022-02-15
US10797255B2 (en) 2020-10-06
PL3427290T3 (pl) 2022-01-10
US20190115549A1 (en) 2019-04-18
WO2017153752A1 (en) 2017-09-14
JP2019516232A (ja) 2019-06-13
ES2884327T3 (es) 2021-12-10
EP3427290B1 (en) 2021-08-04

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