JP6996698B2 - 太陽電池相互接続 - Google Patents
太陽電池相互接続 Download PDFInfo
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- 239000011888 foil Substances 0.000 claims description 199
- 239000000463 material Substances 0.000 claims description 84
- 239000004065 semiconductor Substances 0.000 claims description 41
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- 230000008878 coupling Effects 0.000 claims description 7
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- 239000000758 substrate Substances 0.000 description 49
- 229910052751 metal Inorganic materials 0.000 description 23
- 239000002184 metal Substances 0.000 description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 17
- 229920005591 polysilicon Polymers 0.000 description 16
- 230000007246 mechanism Effects 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 15
- 230000035882 stress Effects 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
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- 239000010949 copper Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
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- 229910052802 copper Inorganic materials 0.000 description 4
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
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- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L31/042—PV modules or arrays of single PV cells
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- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
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- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
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- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
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- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
以下のパラグラフは、本開示(添付の「特許請求の範囲」を含む)で見出される用語に関する、定義及び/又はコンテキストを提供する。
[項目1]
光起電力(「PV」)モジュールであって、
第1の降伏強度を有する第1の部分と第2の部分とを有する第1の導電箔を含む第1の太陽電池であって、上記第1の部分が、上記第1の太陽電池の半導体領域の上に配設され、かつ上記第1の太陽電池の半導体領域に結合され、上記第2の部分が上記第1の太陽電池の縁部を越えて突出する、第1の太陽電池と、
第2の太陽電池に結合された相互接続構造と、を備え、上記相互接続構造が、上記第2の部分を含み、上記第1の降伏強度より高い第2の降伏強度を有する、PVモジュール。
[項目2]
第3の部分と第4の部分とを有する第2の導電箔を含む第2の太陽電池であって、上記第3の部分が、上記第2の太陽電池の半導体領域の上に配設され、かつ上記第2の太陽電池の半導体領域に結合される、第2の太陽電池を更に備え、
上記相互接続構造が、上記第2の導電箔の上記第4の部分に結合された上記第1の導電箔の上記第2の部分を含む、項目1に記載のPVモジュール。
[項目3]
上記相互接続構造が、上記第2の部分と上記第4の部分とに結合された追加材料を更に含み、上記追加材料、上記第2の部分及び上記第4の部分が、共に、上記第2の降伏強度を有する、項目2に記載のPVモジュール。
[項目4]
上記追加材料が、上記第1の太陽電池と上記第2の太陽電池との間に配設されて上記第1の太陽電池と上記第2の太陽電池との間に間隔を提供する、項目3に記載のPVモジュール。
[項目5]
上記追加材料が、1つ又は複数の溶接部によって上記第2の部分と上記第4の部分とに結合される、項目3に記載のPVモジュール。
[項目6]
上記第1の導電箔及び上記第2の導電箔が、アルミニウムを含み、上記追加材料が、上記第1の導電箔及び上記第2の導電箔のアルミニウムより高い降伏強度を有するアルミニウムを含む、項目3に記載のPVモジュール。
[項目7]
上記追加材料が、応力緩和機能を有する、項目3に記載のPVモジュール。
[項目8]
上記追加材料が、上記第2の部分及び上記第4の部分の少なくとも一部の周りに巻き付けられる、項目3に記載のPVモジュール。
[項目9]
上記第1の導電箔が、50マイクロメートル以下の厚さを有する、項目1に記載のPVモジュール。
[項目10]
上記第2の部分が、上記第1の太陽電池の上記縁部を越えて2mm未満突出している、項目1に記載のPVモジュール。
[項目11]
光起電力(「PV」)モジュールを組み立てる方法であって、
第1の導電箔の第1の部分を、第1の基板内又は該第1の基板の上に配設された第1の半導体領域に結合する工程と、
第2の導電箔の第1の部分を、第2の基板内又は該第2の基板の上に配設された第2の半導体領域に結合する工程と、
上記第1の導電箔の第2の部分を上記第2の導電箔の第2の部分に結合して、上記第1の導電箔の上記第1の部分及び上記第2の導電箔の上記第1の部分より高い降伏強度を有する相互接続構造を形成する工程と、を含む、方法。
[項目12]
相互接続材料を上記第1の導電箔の上記第2の部分及び上記第2の導電箔の上記第2の部分に結合して、より高い降伏強度を有する上記相互接続構造を形成する工程を更に含む、項目11に記載の方法。
[項目13]
上記相互接続材料を結合する工程は、上記相互接続材料を上記第1の導電箔の上記第2の部分及び上記第2の導電箔の上記第2の部分に溶接することを含む、項目12に記載の方法。
[項目14]
上記第1の基板と上記第2の基板との間に隙間を形成するように上記相互接続材料を配置する工程を更に含む、項目12に記載の方法。
[項目15]
二重焼き戻し技法を上記第1の導電箔に適用して、異なる降伏強度を有する上記第1の半導体領域及び上記第2の半導体領域を形成する工程を更に含む、項目11に記載の方法。
[項目16]
上記第1の導電箔の上記第1の部分を上記第1の半導体領域に結合する上記工程が、加熱接合技法を実行することを含み、更に、
上記加熱接合技法の実行中に上記第1の導電箔の上記第2の部分を冷却して、上記第1の導電箔の上記第2の部分が、上記第1の導電箔の上記第1の部分より高い降伏強度を有するようにする工程を含む、項目11に記載の方法。
[項目17]
光起電力(「PV」)モジュールであって、
第1及び第2の太陽電池を備え、上記第1及び第2の太陽電池のそれぞれは、
基板と、
上記基板内又は上記基板の上に配設された半導体領域と、
上記半導体領域の上に配設され、かつ上記半導体領域に結合された、第1の降伏強度を有する第1の部分を有する導電箔と、
上記第1の降伏強度より高い第2の降伏強度を有する相互接続と、を備え、上記相互接続が、上記第2の太陽電池の上記導電箔の第2の部分に結合された上記第1の太陽電池の上記導電箔の第2の部分を含む、PVモジュール。
[項目18]
上記相互接続が、上記導電箔の上記第2の部分に結合された追加材料を更に含む、項目17に記載のPVモジュール。
[項目19]
上記追加材料が、上記相互接続の応力緩和を提供するように成形される、項目18に記載のPVモジュール。
[項目20]
上記導電箔が、アルミニウムを含む、項目17に記載のPVモジュール。
Claims (11)
- 太陽電池(「PV」)ストリングであって、
第1の導電箔を含む第1の太陽電池であって、前記第1の導電箔は、前記第1の太陽電池の裏面に配設される半導体領域に電気的に結合される第1の部分と、前記第1の太陽電池の縁部から突出する第2の部分とを有する単一材料層である、第1の太陽電池と、
第2の導電箔を含む第2の太陽電池であって、前記第2の導電箔は、前記第2の太陽電池の裏面に配設される半導体領域に電気的に結合される第1の部分と、前記第2の太陽電池の縁部から突出する第2の部分とを有する単一材料層である、第2の太陽電池と、
前記第1の導電箔の前記第2の部分と前記第2の導電箔の前記第2の部分とを結合させる1つ又は複数の接合部と
を備え、
前記第1の導電箔の前記第2の部分は前記第1の導電箔の前記第1の部分に対して第1の角度がつけられており、前記第2の導電箔の前記第2の部分は前記第2の導電箔の前記第1の部分に対して第2の角度がつけられており、
前記第1の角度は、前記第1の太陽電池のおもて面から前記裏面への方向に形成され、前記第2の角度は、前記第2の太陽電池の前記裏面からおもて面への方向に形成される、PVストリング。 - 太陽電池(「PV」)ストリングであって、
第1の導電箔を含む第1の太陽電池であって、前記第1の導電箔は、前記第1の太陽電池の第1の面に配設される半導体領域に電気的に結合される第1の部分と、前記第1の太陽電池の縁部から突出する第2の部分とを有する単一材料層である、第1の太陽電池と、
第2の導電箔を含む第2の太陽電池であって、前記第2の導電箔は、前記第2の太陽電池の第1の面に配設される半導体領域に電気的に結合される第1の部分と、前記第2の太陽電池の縁部から突出する第2の部分とを有する単一材料層であり、前記第2の太陽電池の前記第1の面は、同じ前記第1の太陽電池の前記第1の面に対応する、第2の太陽電池と、
前記第1の導電箔の前記第2の部分と前記第2の導電箔の前記第2の部分とを結合させる1つ又は複数の接合部と
を備え、
前記第1の導電箔の前記第2の部分は前記第1の導電箔の前記第1の部分に対して第1の角度がつけられており、前記第2の導電箔の前記第2の部分は前記第2の導電箔の前記第1の部分に対して第2の角度がつけられており、
前記第1の角度は、前記第1の太陽電池の前記第1の面と反対側の第2の面から前記第1の面への方向に形成され、前記第2の角度は、前記第2の太陽電池の前記第1の面から前記第1の面と反対側の第2の面への方向に形成される、PVストリング。 - 太陽電池(「PV」)ストリングであって、
第1の導電箔を含む第1の太陽電池であって、前記第1の導電箔は、前記第1の太陽電池の裏面に配設される半導体領域に電気的に結合される第1の部分と、前記第1の太陽電池の縁部から突出する第2の部分とを有する単一材料層である、第1の太陽電池と、
第2の導電箔を含む第2の太陽電池であって、前記第2の導電箔は、前記第2の太陽電池の裏面に配設される半導体領域に電気的に結合される第1の部分と、前記第2の太陽電池の縁部から突出する第2の部分とを有する単一材料層である、第2の太陽電池と、
前記第1の導電箔の前記第2の部分及び前記第2の導電箔の前記第2の部分を含む相互接続構造であって、1つ又は複数の接合部が前記第1の導電箔の前記第2の部分を前記第2の導電箔の前記第2の部分に結合させる、相互接続構造と
を備え、
前記第1の導電箔の前記第2の部分は前記第1の導電箔の前記第1の部分に対して第1の角度がつけられており、前記第2の導電箔の前記第2の部分は前記第2の導電箔の前記第1の部分に対して第2の角度がつけられており、
前記第1の角度は、前記第1の太陽電池のおもて面から前記裏面への方向に形成され、前記第2の角度は、前記第2の太陽電池の前記裏面からおもて面への方向に形成される、PVストリング。 - 前記第1の導電箔の前記第1の部分は前記第1の太陽電池の一方の縁部から他方の縁部まで延び、前記第2の導電箔の前記第1の部分は前記第2の太陽電池の一方の縁部から他方の縁部まで延びる、請求項1から3の何れか一項に記載のPVストリング。
- 前記第1の太陽電池の前記縁部から突出する第1の導電箔の第3の部分と、
前記第2の太陽電池の前記縁部から突出する第2の導電箔の第3の部分と、
前記第1の導電箔の前記第3の部分と前記第2の導電箔の前記第3の部分とを結合させる1つ又は複数の接合部と
をさらに備える
請求項1から4の何れか一項に記載のPVストリング。 - 前記第1の導電箔が50マイクロメートル以下の厚さを有する
請求項1から5の何れか一項に記載のPVストリング。 - 前記第1の導電箔の前記第2の部分は、前記第1の太陽電池の前記縁部から2mm未満突出する
請求項1から6の何れか一項に記載のPVストリング。 - 前記第1の導電箔はアルミニウムを含む
請求項1から7の何れか一項に記載のPVストリング。 - 前記第1の太陽電池と前記第2の太陽電池との間に隙間をさらに備える
請求項1から8の何れか一項に記載のPVストリング。 - 前記1つ又は複数の接合部は、溶接領域、はんだ付け領域及び熱圧縮領域からなる群から選択される領域を含む
請求項1から9の何れか一項に記載のPVストリング。 - 前記1つ又は複数の接合部は、前記第1及び第2の導電箔の前記第2の部分に結合される追加材料を含む
請求項1から10の何れか一項に記載のPVストリング。
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