JP6991656B2 - チップの製造方法 - Google Patents

チップの製造方法 Download PDF

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Publication number
JP6991656B2
JP6991656B2 JP2017205349A JP2017205349A JP6991656B2 JP 6991656 B2 JP6991656 B2 JP 6991656B2 JP 2017205349 A JP2017205349 A JP 2017205349A JP 2017205349 A JP2017205349 A JP 2017205349A JP 6991656 B2 JP6991656 B2 JP 6991656B2
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JP
Japan
Prior art keywords
workpiece
modified layer
holding
chip
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2017205349A
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English (en)
Japanese (ja)
Other versions
JP2019079917A (ja
JP2019079917A5 (enExample
Inventor
良彰 淀
金艶 趙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Priority to JP2017205349A priority Critical patent/JP6991656B2/ja
Priority to CN201811200560.6A priority patent/CN109698118B/zh
Priority to KR1020180123117A priority patent/KR102588040B1/ko
Priority to TW107136943A priority patent/TWI774865B/zh
Publication of JP2019079917A publication Critical patent/JP2019079917A/ja
Publication of JP2019079917A5 publication Critical patent/JP2019079917A5/ja
Application granted granted Critical
Publication of JP6991656B2 publication Critical patent/JP6991656B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2017205349A 2017-10-24 2017-10-24 チップの製造方法 Active JP6991656B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017205349A JP6991656B2 (ja) 2017-10-24 2017-10-24 チップの製造方法
CN201811200560.6A CN109698118B (zh) 2017-10-24 2018-10-16 芯片的制造方法
KR1020180123117A KR102588040B1 (ko) 2017-10-24 2018-10-16 칩의 제조 방법
TW107136943A TWI774865B (zh) 2017-10-24 2018-10-19 晶片製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017205349A JP6991656B2 (ja) 2017-10-24 2017-10-24 チップの製造方法

Publications (3)

Publication Number Publication Date
JP2019079917A JP2019079917A (ja) 2019-05-23
JP2019079917A5 JP2019079917A5 (enExample) 2020-03-05
JP6991656B2 true JP6991656B2 (ja) 2022-01-12

Family

ID=66229725

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017205349A Active JP6991656B2 (ja) 2017-10-24 2017-10-24 チップの製造方法

Country Status (4)

Country Link
JP (1) JP6991656B2 (enExample)
KR (1) KR102588040B1 (enExample)
CN (1) CN109698118B (enExample)
TW (1) TWI774865B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7334065B2 (ja) * 2019-05-28 2023-08-28 株式会社ディスコ チップの製造方法
CN110271103A (zh) * 2019-06-20 2019-09-24 深圳市圆梦精密技术研究院 激光辅助旋转超声波加工机床及加工方法
JP7326053B2 (ja) * 2019-07-11 2023-08-15 株式会社ディスコ 被加工物の加工方法
JP7467208B2 (ja) * 2020-04-06 2024-04-15 浜松ホトニクス株式会社 レーザ加工装置、及び、レーザ加工方法
JP7648375B2 (ja) * 2020-12-17 2025-03-18 株式会社ディスコ ウエーハの生成装置

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003151918A (ja) 2001-11-12 2003-05-23 Sony Corp ダイシングテーブルおよびこれを用いたダイシング装置
JP2004273899A (ja) 2003-03-11 2004-09-30 Sony Corp ウェーハ保持用治具、同治具を用いた半導体製造装置
JP2005135964A (ja) 2003-10-28 2005-05-26 Disco Abrasive Syst Ltd ウエーハの分割方法
JP2006263754A (ja) 2005-03-22 2006-10-05 Hamamatsu Photonics Kk レーザ加工方法
JP2010003817A (ja) 2008-06-19 2010-01-07 Tokyo Seimitsu Co Ltd レーザーダイシング方法及びレーザーダイシング装置
JP2012130952A (ja) 2010-12-22 2012-07-12 Hamamatsu Photonics Kk レーザ加工方法
JP2013135026A (ja) 2011-12-26 2013-07-08 Disco Abrasive Syst Ltd ウェーハの加工方法
JP2014072476A (ja) 2012-10-01 2014-04-21 Disco Abrasive Syst Ltd ウェーハの加工方法
JP2014199834A (ja) 2013-03-29 2014-10-23 株式会社ディスコ 保持手段及び加工方法
JP2014236034A (ja) 2013-05-31 2014-12-15 株式会社ディスコ ウェーハの加工方法
US20150069578A1 (en) 2013-09-11 2015-03-12 Nxp B.V. Combination grinding after laser (gal) and laser on-off function to increase die strength
JP2015115350A (ja) 2013-12-09 2015-06-22 株式会社ディスコ ウェーハ加工装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3408805B2 (ja) 2000-09-13 2003-05-19 浜松ホトニクス株式会社 切断起点領域形成方法及び加工対象物切断方法
JP4769560B2 (ja) * 2005-12-06 2011-09-07 株式会社ディスコ ウエーハの分割方法
JP5791866B2 (ja) 2009-03-06 2015-10-07 株式会社ディスコ ワーク分割装置
JP2016129202A (ja) * 2015-01-09 2016-07-14 株式会社ディスコ ウエーハの加工方法

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003151918A (ja) 2001-11-12 2003-05-23 Sony Corp ダイシングテーブルおよびこれを用いたダイシング装置
JP2004273899A (ja) 2003-03-11 2004-09-30 Sony Corp ウェーハ保持用治具、同治具を用いた半導体製造装置
JP2005135964A (ja) 2003-10-28 2005-05-26 Disco Abrasive Syst Ltd ウエーハの分割方法
JP2006263754A (ja) 2005-03-22 2006-10-05 Hamamatsu Photonics Kk レーザ加工方法
JP2010003817A (ja) 2008-06-19 2010-01-07 Tokyo Seimitsu Co Ltd レーザーダイシング方法及びレーザーダイシング装置
JP2012130952A (ja) 2010-12-22 2012-07-12 Hamamatsu Photonics Kk レーザ加工方法
JP2013135026A (ja) 2011-12-26 2013-07-08 Disco Abrasive Syst Ltd ウェーハの加工方法
JP2014072476A (ja) 2012-10-01 2014-04-21 Disco Abrasive Syst Ltd ウェーハの加工方法
JP2014199834A (ja) 2013-03-29 2014-10-23 株式会社ディスコ 保持手段及び加工方法
JP2014236034A (ja) 2013-05-31 2014-12-15 株式会社ディスコ ウェーハの加工方法
US20150069578A1 (en) 2013-09-11 2015-03-12 Nxp B.V. Combination grinding after laser (gal) and laser on-off function to increase die strength
JP2015115350A (ja) 2013-12-09 2015-06-22 株式会社ディスコ ウェーハ加工装置

Also Published As

Publication number Publication date
TWI774865B (zh) 2022-08-21
JP2019079917A (ja) 2019-05-23
KR102588040B1 (ko) 2023-10-11
TW201917784A (zh) 2019-05-01
KR20190045840A (ko) 2019-05-03
CN109698118A (zh) 2019-04-30
CN109698118B (zh) 2024-02-20

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