JP6989525B2 - ポリシラン化合物の製造方法、組成物、膜、及び基板 - Google Patents

ポリシラン化合物の製造方法、組成物、膜、及び基板 Download PDF

Info

Publication number
JP6989525B2
JP6989525B2 JP2018559050A JP2018559050A JP6989525B2 JP 6989525 B2 JP6989525 B2 JP 6989525B2 JP 2018559050 A JP2018559050 A JP 2018559050A JP 2018559050 A JP2018559050 A JP 2018559050A JP 6989525 B2 JP6989525 B2 JP 6989525B2
Authority
JP
Japan
Prior art keywords
group
polysilane
compound
polysilane compound
less
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018559050A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2018123658A1 (ja
Inventor
博樹 千坂
国宏 野田
大 塩田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of JPWO2018123658A1 publication Critical patent/JPWO2018123658A1/ja
Application granted granted Critical
Publication of JP6989525B2 publication Critical patent/JP6989525B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07B—GENERAL METHODS OF ORGANIC CHEMISTRY; APPARATUS THEREFOR
    • C07B61/00—Other general methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Silicon Polymers (AREA)
  • Formation Of Insulating Films (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
JP2018559050A 2016-12-28 2017-12-15 ポリシラン化合物の製造方法、組成物、膜、及び基板 Active JP6989525B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016257009 2016-12-28
JP2016257009 2016-12-28
PCT/JP2017/045124 WO2018123658A1 (ja) 2016-12-28 2017-12-15 ポリシラン化合物の製造方法、組成物、膜、及び基板

Publications (2)

Publication Number Publication Date
JPWO2018123658A1 JPWO2018123658A1 (ja) 2019-11-21
JP6989525B2 true JP6989525B2 (ja) 2022-01-05

Family

ID=62708073

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018559050A Active JP6989525B2 (ja) 2016-12-28 2017-12-15 ポリシラン化合物の製造方法、組成物、膜、及び基板

Country Status (3)

Country Link
JP (1) JP6989525B2 (zh)
TW (1) TWI766919B (zh)
WO (1) WO2018123658A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11532806B2 (en) 2014-04-01 2022-12-20 The Research Foundation For The State University Of New York Electrode materials that include an active composition of the formula MgzMxOy for group II cation-based batteries

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2574012B2 (ja) * 1987-10-09 1997-01-22 三井石油化学工業株式会社 ポリシラン化合物の製造方法
JP2500539B2 (ja) * 1991-03-15 1996-05-29 信越化学工業株式会社 ポリシランの製造方法
JP4840548B2 (ja) * 2000-09-25 2011-12-21 Ｊｓｒ株式会社 膜形成用組成物および絶縁膜形成用材料
JP4205354B2 (ja) * 2002-03-20 2009-01-07 大阪瓦斯株式会社 ポリシラン系コポリマーの製造方法
JP2006316197A (ja) * 2005-05-13 2006-11-24 Nitto Kasei Co Ltd ポリシラン類の製造方法
JP4866050B2 (ja) * 2005-10-13 2012-02-01 日本曹達株式会社 ポリシランの製造方法
CN101336263B (zh) * 2005-12-07 2012-02-01 大阪瓦斯株式会社 聚硅烷和含聚硅烷的树脂组合物

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11532806B2 (en) 2014-04-01 2022-12-20 The Research Foundation For The State University Of New York Electrode materials that include an active composition of the formula MgzMxOy for group II cation-based batteries

Also Published As

Publication number Publication date
JPWO2018123658A1 (ja) 2019-11-21
WO2018123658A1 (ja) 2018-07-05
TWI766919B (zh) 2022-06-11
TW201835168A (zh) 2018-10-01

Similar Documents

Publication Publication Date Title
US7491782B1 (en) Polysilane compositions, methods for their synthesis and films formed therefrom
US10690847B2 (en) Method of making a photonic crystal device and photonic crystal device
JP4508428B2 (ja) コーティング組成物
CN1831193A (zh) 镀敷方法
US20100029057A1 (en) Silicone resin composition and method of forming a trench isolation
TWI809095B (zh) 感能量性組成物、硬化物，及圖型形成方法
JP2010101957A (ja) ポジ型感光性組成物及び永久レジスト
CN107873033B (zh) 高ri硅氧烷单体、其聚合和应用
JP5479993B2 (ja) ポジ型感光性組成物及び永久レジスト
JP6989525B2 (ja) ポリシラン化合物の製造方法、組成物、膜、及び基板
JP2019528246A (ja) シロキサンモノマー、それらの重合およびそれらの使用
JP7413369B2 (ja) 含ケイ素ポリマー、膜形成用組成物、含ケイ素ポリマー被膜の形成方法、シリカ系被膜の形成方法、及び含ケイ素ポリマーの製造方法
JP4908891B2 (ja) 熱硬化性樹脂用硬化剤およびその組成物
JP2012136559A (ja) ポリシロキサン縮合反応物ワニスの製造方法
JP6916619B2 (ja) ポリシラン化合物、組成物、硬化物及び基板の製造方法、並びにアニオン重合選択的促進剤
KR102508076B1 (ko) 수지 조성물, 수지 조성물의 제조 방법, 막 형성 방법 및 경화물
JP5350602B2 (ja) ポリシラン及びその製造方法
JP7413370B2 (ja) 含ケイ素ポリマー、膜形成用組成物、被処理体の表面に金属化合物を担持させる方法、金属化合物を担持する被膜を備える物品、及び含ケイ素ポリマーの製造方法
JP4380229B2 (ja) 新規化合物およびその用途
JP2020189973A (ja) 含ケイ素ポリマー、膜形成用組成物、含ケイ素ポリマー被膜の形成方法、シリカ系被膜の形成方法、及び含ケイ素ポリマーの製造方法
JP6764782B2 (ja) ポリシランの製造方法及びこれに用いる活性金属マグネシウム成分の製造方法
EP1349007A1 (en) Photosensitive Paste
JP2006016596A (ja) ケイ素含有化合物、該化合物を含有する組成物及び絶縁材料
JP3908509B2 (ja) ゲルマニウム原子ならびにシリコン原子含有ラダー型耐熱性樹脂およびその製造方法
JP2013151581A (ja) ポリシロキサン材料

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20200910

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210706

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20210906

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20211028

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20211116

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20211029

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20211202

R150 Certificate of patent or registration of utility model

Ref document number: 6989525

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150