JP6987822B2 - 蒸発源装置、成膜装置、成膜方法および電子デバイスの製造方法 - Google Patents
蒸発源装置、成膜装置、成膜方法および電子デバイスの製造方法 Download PDFInfo
- Publication number
- JP6987822B2 JP6987822B2 JP2019176783A JP2019176783A JP6987822B2 JP 6987822 B2 JP6987822 B2 JP 6987822B2 JP 2019176783 A JP2019176783 A JP 2019176783A JP 2019176783 A JP2019176783 A JP 2019176783A JP 6987822 B2 JP6987822 B2 JP 6987822B2
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- heater
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- evaporation source
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- 230000008020 evaporation Effects 0.000 title claims description 52
- 238000001704 evaporation Methods 0.000 title claims description 52
- 238000000034 method Methods 0.000 title claims description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000010408 film Substances 0.000 claims description 61
- 239000000463 material Substances 0.000 claims description 35
- 238000010438 heat treatment Methods 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 238000000427 thin-film deposition Methods 0.000 claims description 4
- 239000011364 vaporized material Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 44
- 239000010410 layer Substances 0.000 description 42
- 230000004048 modification Effects 0.000 description 23
- 238000012986 modification Methods 0.000 description 23
- 238000010586 diagram Methods 0.000 description 16
- 238000007740 vapor deposition Methods 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 13
- 230000005525 hole transport Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000004804 winding Methods 0.000 description 6
- 230000004323 axial length Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000007630 basic procedure Methods 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
- H05B1/0202—Switches
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
- H05B1/0227—Applications
- H05B1/023—Industrial applications
- H05B1/0233—Industrial applications for semiconductors manufacturing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
- H05B3/06—Heater elements structurally combined with coupling elements or holders
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/40—Heating elements having the shape of rods or tubes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019176783A JP6987822B2 (ja) | 2019-09-27 | 2019-09-27 | 蒸発源装置、成膜装置、成膜方法および電子デバイスの製造方法 |
KR1020200045920A KR20210037507A (ko) | 2019-09-27 | 2020-04-16 | 증발원 장치, 성막 장치, 성막 방법 및 전자 디바이스의 제조방법 |
CN202011023409.7A CN112575295B (zh) | 2019-09-27 | 2020-09-25 | 蒸发源装置、成膜装置、成膜方法及电子器件的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019176783A JP6987822B2 (ja) | 2019-09-27 | 2019-09-27 | 蒸発源装置、成膜装置、成膜方法および電子デバイスの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021055123A JP2021055123A (ja) | 2021-04-08 |
JP6987822B2 true JP6987822B2 (ja) | 2022-01-05 |
Family
ID=75119620
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019176783A Active JP6987822B2 (ja) | 2019-09-27 | 2019-09-27 | 蒸発源装置、成膜装置、成膜方法および電子デバイスの製造方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6987822B2 (ko) |
KR (1) | KR20210037507A (ko) |
CN (1) | CN112575295B (ko) |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5164657A (ja) * | 1974-12-03 | 1976-06-04 | Kawasaki Heavy Ind Ltd | Herikaruchuubugatanetsukokankino dennetsukanshijitai |
JPS5399554A (en) * | 1977-02-14 | 1978-08-31 | Kawasaki Heavy Ind Ltd | Heat conducting pipe supporting system for helical coil type heat exchanger |
JPS5814513Y2 (ja) * | 1977-09-08 | 1983-03-23 | 株式会社東芝 | 電子管用ヒ−タ−構体 |
JPS57201522A (en) * | 1981-06-01 | 1982-12-10 | Mitsubishi Electric Corp | Cell for vacuum deposition |
JPS602190U (ja) * | 1983-06-17 | 1985-01-09 | 三菱重工業株式会社 | 熱交換器 |
JPS62169321A (ja) * | 1986-01-21 | 1987-07-25 | Hitachi Ltd | 真空蒸着用蒸発源 |
JPH01226795A (ja) * | 1988-03-08 | 1989-09-11 | Fujitsu Ltd | 分子線源セル |
JPH07253276A (ja) * | 1994-03-16 | 1995-10-03 | Tokyo Electron Ltd | 熱処理炉及びその製造方法 |
JP3623587B2 (ja) * | 1996-02-20 | 2005-02-23 | 出光興産株式会社 | 真空蒸着装置およびその真空蒸着装置を用いた真空蒸着方法 |
JP2007224393A (ja) * | 2006-02-25 | 2007-09-06 | Seiko Instruments Inc | 蒸着源セル、薄膜の製造方法、絞り部材、及び蒸着源加熱ヒータ |
TWI565367B (zh) * | 2010-06-25 | 2017-01-01 | 山特維克熱傳動公司 | 用於加熱元件線圈之支撐結構 |
JP2013035710A (ja) * | 2011-08-05 | 2013-02-21 | Fujitsu Ltd | 成膜装置及び成膜方法 |
KR20130035710A (ko) | 2011-09-30 | 2013-04-09 | 삼성전기주식회사 | 릴레이 펀칭 금형 및 릴레이 펀칭 금형을 이용한 펀칭 방법 |
KR101390413B1 (ko) * | 2012-12-27 | 2014-04-30 | 주식회사 선익시스템 | 증발원 가열 장치 |
KR20140085092A (ko) * | 2012-12-27 | 2014-07-07 | 주식회사 선익시스템 | 증발원 가열 장치 |
KR101967040B1 (ko) * | 2017-02-24 | 2019-04-10 | 주식회사 야스 | 고온 증발원용 히터 |
CN206916211U (zh) * | 2017-06-08 | 2018-01-23 | 费勉仪器科技(上海)有限公司 | 一种超高温蒸发源 |
CN107190237A (zh) * | 2017-06-26 | 2017-09-22 | 深圳市华星光电技术有限公司 | 蒸发源加热系统 |
CN107686968A (zh) * | 2017-08-14 | 2018-02-13 | 武汉华星光电半导体显示技术有限公司 | 蒸镀坩埚及蒸镀系统 |
JP6595568B2 (ja) * | 2017-12-12 | 2019-10-23 | キヤノントッキ株式会社 | 蒸発源装置及び蒸着装置 |
CN108728801B (zh) * | 2018-05-28 | 2019-11-12 | 深圳市华星光电技术有限公司 | 蒸镀装置及蒸镀方法 |
-
2019
- 2019-09-27 JP JP2019176783A patent/JP6987822B2/ja active Active
-
2020
- 2020-04-16 KR KR1020200045920A patent/KR20210037507A/ko unknown
- 2020-09-25 CN CN202011023409.7A patent/CN112575295B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN112575295A (zh) | 2021-03-30 |
CN112575295B (zh) | 2023-04-07 |
JP2021055123A (ja) | 2021-04-08 |
KR20210037507A (ko) | 2021-04-06 |
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