JP6985213B2 - 気相反応器中でのケイ素−炭素複合材の合成 - Google Patents
気相反応器中でのケイ素−炭素複合材の合成 Download PDFInfo
- Publication number
- JP6985213B2 JP6985213B2 JP2018112828A JP2018112828A JP6985213B2 JP 6985213 B2 JP6985213 B2 JP 6985213B2 JP 2018112828 A JP2018112828 A JP 2018112828A JP 2018112828 A JP2018112828 A JP 2018112828A JP 6985213 B2 JP6985213 B2 JP 6985213B2
- Authority
- JP
- Japan
- Prior art keywords
- gas stream
- silicon
- wall reactor
- high temperature
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/362—Composites
- H01M4/364—Composites as mixtures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J12/00—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor
- B01J12/005—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor carried out at high temperatures, e.g. by pyrolysis
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C01B32/963—Preparation from compounds containing silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C01B32/963—Preparation from compounds containing silicon
- C01B32/977—Preparation from organic compounds containing silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/052—Li-accumulators
- H01M10/0525—Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
- H01M4/386—Silicon or alloys based on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/58—Selection of substances as active materials, active masses, active liquids of inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFy; of polyanionic structures, e.g. phosphates, silicates or borates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/58—Selection of substances as active materials, active masses, active liquids of inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFy; of polyanionic structures, e.g. phosphates, silicates or borates
- H01M4/583—Carbonaceous material, e.g. graphite-intercalation compounds or CFx
- H01M4/587—Carbonaceous material, e.g. graphite-intercalation compounds or CFx for inserting or intercalating light metals
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M2004/026—Electrodes composed of, or comprising, active material characterised by the polarity
- H01M2004/027—Negative electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Health & Medical Sciences (AREA)
- Health & Medical Sciences (AREA)
- Silicon Compounds (AREA)
- Carbon And Carbon Compounds (AREA)
Description
a)SiH4、Si2H6および/またはSi3H8から選択される少なくとも1種のシランを含有し、かつエテンおよび/またはアセチレンから選択される少なくとも1種の炭化水素を含有するガス流Iと、水素を含有する同軸のガス流IIとを高温壁反応器に供給し、ここで、ガス流IIは、ガス流Iに対するジャケット流を形成し、
b)少なくともガス流Iを900℃〜1100℃の温度で反応させ、引き続き高温壁反応器の出口で反応混合物を冷却または放冷し、粉末状反応生成物をガス状物質から分離する、
ことを特徴とする、ケイ素−SiC−複合材粉末の製造方法である。
ガス流IおよびIIの組成を表1にまとめている。用いた物質のデータは、それぞれ体積流量[slm]に関する。
− 加熱ゾーン1および加熱ゾーン2において、それぞれで異なる温度を設定しており、
− さらに、ガス流II中でより少ない水素流を選択する、すなわち、試験6では30slmのH2、試験4および7では35slmのH2を選択することによって、ガス流Iの反応物質の滞留時間をより長く設定し、
− 試験6ではSiH4対炭化水素の異なる量比で、試験7ではSiH4対アセチレンを選択した。
Claims (4)
- ケイ素−SiC−複合材粉末の製造方法において、
a)SiH4、Si2H6および/またはSi3H8から選択される少なくとも1種のシランを含有し、かつエテンおよび/またはアセチレンから選択される少なくとも1種の炭化水素を含有するガス流Iと、水素を含有する同軸のガス流IIとを高温壁反応器に供給し、ここで、前記ガス流IIは、前記ガス流Iに対するジャケット流を形成し、
b)少なくとも前記ガス流Iを900℃〜1100℃の温度で反応させ、引き続き前記高温壁反応器の出口で反応混合物を冷却または放冷し、粉末状反応生成物をガス状物質から分離する、
ことを特徴とする方法。 - 前記ガス流Iと前記ガス流IIは層流で、高温壁反応器を貫流する、請求項1記載の方法。
- 工程a)において、前記ガス流Iにエテンまたはアセチレンを装入し、さらにアルゴンを装入する、請求項1記載の方法。
- 前記高温壁反応器中で少なくとも2つの加熱ゾーンを用い、ここで、第1の加熱ゾーンは、900℃〜1010℃の温度にし、かつ第2の加熱ゾーンは、1050℃〜1100℃の温度にすることを特徴とする、請求項1から3までのいずれか1項記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP17176040.8 | 2017-06-14 | ||
EP17176040.8A EP3415469B1 (de) | 2017-06-14 | 2017-06-14 | Synthese von silicium-kohlenstoff-komposit in einem gasphasenreaktor |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019001704A JP2019001704A (ja) | 2019-01-10 |
JP6985213B2 true JP6985213B2 (ja) | 2021-12-22 |
Family
ID=59284975
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018112828A Active JP6985213B2 (ja) | 2017-06-14 | 2018-06-13 | 気相反応器中でのケイ素−炭素複合材の合成 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10693129B2 (ja) |
EP (1) | EP3415469B1 (ja) |
JP (1) | JP6985213B2 (ja) |
KR (1) | KR102446634B1 (ja) |
CN (1) | CN109088056B (ja) |
TW (1) | TWI767011B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112705150B (zh) * | 2020-11-05 | 2022-12-23 | 中国恩菲工程技术有限公司 | 复合材料制备装置与方法 |
CN115881931A (zh) * | 2021-09-29 | 2023-03-31 | 溧阳天目先导电池材料科技有限公司 | 一种用于二次锂电池的新型复合材料及制备方法和应用 |
WO2023147853A1 (en) | 2022-02-02 | 2023-08-10 | Evonik Operations Gmbh | Hierarchically structured si/c agglomerates made by spray drying |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2744636A1 (de) * | 1977-10-04 | 1979-05-17 | Wolfgang Dipl Ing Boecker | Verfahren und vorrichtung zur herstellung von hochreinem siliciumcarbidpulver und seine verwendung |
US5108729A (en) | 1989-10-02 | 1992-04-28 | Phillips Petroleum Company | Production of carbide products |
DE102007020568A1 (de) * | 2007-05-02 | 2008-11-06 | Wacker Chemie Ag | Verfahren zur kontinuierlichen Herstellung von Aminoalkylgruppen aufweisenden Organopolysiloxanen |
KR101375328B1 (ko) | 2007-07-27 | 2014-03-19 | 삼성에스디아이 주식회사 | Si/C 복합물, 이를 포함하는 음극활물질 및 리튬전지 |
DE102009033251A1 (de) | 2008-08-30 | 2010-09-23 | Universität Duisburg-Essen | Einlagerung von Silizium und/oder Zinn in poröse Kohlenstoffsubstrate |
DE102009002129A1 (de) * | 2009-04-02 | 2010-10-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Hartstoffbeschichtete Körper und Verfahren zur Herstellung hartstoffbeschichteter Körper |
DE102009033739A1 (de) | 2009-07-17 | 2011-01-27 | Evonik Degussa Gmbh | Nanostrukturierte Silizium-Kohlenstoff-Komposite für Batterieelektroden |
CN102214817A (zh) * | 2010-04-09 | 2011-10-12 | 清华大学 | 一种碳/硅/碳纳米复合结构负极材料及其制备方法 |
DE102013204799A1 (de) | 2013-03-19 | 2014-09-25 | Wacker Chemie Ag | Si/C-Komposite als Anodenmaterialien für Lithium-Ionen-Batterien |
EP3026012A1 (de) * | 2014-11-28 | 2016-06-01 | Evonik Degussa GmbH | Höchstreine, amorphe metallverbindungspulver, verfahren zu deren herstellung als auch deren verwendung |
CN105199398B (zh) * | 2015-10-27 | 2019-04-05 | 湖南博翔新材料有限公司 | 一种有机硅复合材料及其制备方法 |
US20190002352A1 (en) * | 2015-12-23 | 2019-01-03 | Evonik Degsussa GmbH | Method for producing a silicon carbide shaped body |
DE102016203324A1 (de) | 2016-03-01 | 2017-09-07 | Evonik Degussa Gmbh | Verfahren zur Herstellung eines Silicium-Kohlenstoff-Komposites |
-
2017
- 2017-06-14 EP EP17176040.8A patent/EP3415469B1/de active Active
-
2018
- 2018-06-11 TW TW107119977A patent/TWI767011B/zh active
- 2018-06-12 KR KR1020180067176A patent/KR102446634B1/ko active IP Right Grant
- 2018-06-13 US US16/007,547 patent/US10693129B2/en active Active
- 2018-06-13 CN CN201810604877.XA patent/CN109088056B/zh active Active
- 2018-06-13 JP JP2018112828A patent/JP6985213B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
KR102446634B1 (ko) | 2022-09-23 |
JP2019001704A (ja) | 2019-01-10 |
EP3415469A1 (de) | 2018-12-19 |
EP3415469B1 (de) | 2019-09-11 |
KR20180136391A (ko) | 2018-12-24 |
CN109088056A (zh) | 2018-12-25 |
TWI767011B (zh) | 2022-06-11 |
US20180366722A1 (en) | 2018-12-20 |
TW201908238A (zh) | 2019-03-01 |
US10693129B2 (en) | 2020-06-23 |
CN109088056B (zh) | 2022-06-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6985213B2 (ja) | 気相反応器中でのケイ素−炭素複合材の合成 | |
Jin et al. | Mass production of high‐quality transition metal dichalcogenides nanosheets via a molten salt method | |
Klein et al. | Reduced‐pressure chemical vapor synthesis of nanocrystalline silicon carbide powders | |
JP2016502466A (ja) | カーボンナノチューブ製造用触媒及びこれを用いて製造されたカーボンナノチューブ | |
JP2019507096A (ja) | シリコン−炭素複合体を製造する方法 | |
Kumar et al. | Synthetic approaches to borocarbonitrides, BCxN (x= 1–2) | |
WO2012015044A1 (ja) | 気相成長炭素繊維集合体 | |
He et al. | Fabrication of aluminum carbide nanowires by a nano-template reaction | |
Peng et al. | Growth and mechanism of network‐like branched Si3N4 nanostructures | |
Atiyah et al. | Low temperature growth of vertically aligned carbon nanotubes via floating catalyst chemical vapor deposition method | |
Keller et al. | Carbon nanotube formation in situ during carbonization in shaped bulk solid cobalt nanoparticle compositions | |
KR102176380B1 (ko) | 석유 또는 석탄으로부터 유래된 코크스를 위한 촉매 활성 첨가제 | |
KR20190019652A (ko) | 그래핀 나노구체 제조방법 | |
Du et al. | The synthesis of single-walled carbon nanotubes with controlled length and bundle size using the electric arc method | |
JP5169248B2 (ja) | リチウムイオン二次電池負極材用の炭素微小球粉末及びその製造方法 | |
Zhang et al. | Reaction Pathway Analysis of B/Li2O in a Li–B–O System for Boron Nitride Nanotube Growth | |
Laskoski et al. | Solid-phase synthesis of multi-walled carbon nanotubes from butadiynyl-ferrocene-containing compounds | |
JPS5939708A (ja) | 炭化けい素微粉末の製造方法 | |
KR101679693B1 (ko) | 탄소나노튜브 제조방법 및 하이브리드 탄소나노튜브 복합체 | |
Mi et al. | New discoveries in the growth of SiC whiskers derived from hydrogen silicone oil | |
Yin et al. | Synthesis and growth mechanism of BCN nanowires | |
WO2015047050A1 (ko) | 탄소나노튜브 제조용 촉매 및 이를 이용하여 제조된 탄소나노튜브 | |
Neralla | Chemical Vapor Deposition: Recent Advances and Applications in Optical, Solar Cells and Solid State Devices | |
Liu et al. | Theoretical and experimental study of the mechanism for preparation of SiC nanowires by carbothermal reduction | |
JP2536849B2 (ja) | 焼結用β晶炭化ケイ素粉末 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20201210 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210819 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210830 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210927 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20211108 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20211125 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6985213 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |