JP6984277B2 - A method for manufacturing a perforated substrate, a mounting substrate including a perforated substrate, and a perforated substrate. - Google Patents

Description

The embodiments of the present disclosure relate to a perforated substrate. The present invention also relates to a mounting substrate including a perforated substrate and a method for manufacturing the perforated substrate.

For example, as disclosed in Patent Document 1, a substrate including the first surface and the second surface, a plurality of holes provided in the substrate, and holes so as to extend from the first surface side to the second surface side of the substrate. Through electrode substrates provided with an electrode portion provided inside are used for various purposes. The through silicon via board may be configured as a mounting board by mounting an element such as a capacitor. The through silicon via substrate can also be used in manufacturing a thin film capacitor in which a capacitor is embedded in the substrate. According to the thin film capacitor, a compact and large-capacity capacitor can be realized by forming the dielectric layer using an inorganic material having a high dielectric constant.

Japanese Unexamined Patent Publication No. 2011-3925

In a through electrode substrate, a wiring layer provided directly on the substrate is generally connected to an electrode portion inside the hole. However, due to thermal deformation of the wiring layer or the like, damage such as cracks may occur on the peripheral edge of the hole or the outer edge of the substrate. In particular, when the substrate is glass and the thickness of the wiring layer is relatively large, the problem of damage is likely to occur remarkably due to the increase in the material properties of the glass and the amount of deformation of the wiring layer. In addition, cracks are likely to occur in the portion of the substrate facing the end of the wiring layer.

An embodiment of the present disclosure provides a method for manufacturing a perforated substrate, a mounting substrate including a perforated substrate, and a perforated substrate that can effectively suppress damage to the substrate due to a wiring layer on the substrate. The purpose.

One embodiment of the present disclosure comprises a substrate including a first surface and a second surface located on the opposite side of the first surface and provided with a through hole, and at least one of the first surface and the second surface. A base organic layer located on any surface and containing an organic material and a wiring layer located on the base organic layer and having conductivity are provided, and the base organic layer is a peripheral edge of the through hole. A perforated substrate that covers at least one of the outer edge of the first surface and the outer edge of the second surface along the normal direction and the in-plane direction of the substrate.

The perforated substrate according to one embodiment further includes a through hole and a through electrode located straddling the underlying organic layer, and the through electrode may be electrically connected to the wiring layer.

Further, in the perforated substrate according to the embodiment, the underlying organic layer covers the peripheral edge of the through hole along the normal direction and the in-plane direction of the substrate, and the through electrode is the underlying organic layer. The portion of the through hole located in the through hole may be covered.

Further, in the perforated substrate according to the embodiment, among the peripheral edge of the through hole, the outer edge of the first surface, and the outer edge of the second surface of the underlying organic layer along the in-plane direction of the substrate. The portion covering at least one of the above may partially cover the inner peripheral surface of the through hole or the side portion located between the first surface and the second surface of the substrate.

Further, in the perforated substrate according to the embodiment, the base organic layer covers the peripheral edge of the through hole along the in-plane direction of the substrate, and the inner peripheral surface of the through hole is the first surface and the inner peripheral surface thereof. The portion of the underlying organic layer located in the through hole is tapered from at least one of the second surfaces toward the inside of the substrate. The inner peripheral surface of the through hole may be provided on the wider end side and may not be provided on the narrower end side.

Further, in the perforated substrate according to the embodiment, the base organic layer covers the peripheral edge of the through hole along the in-plane direction of the substrate, and is along the in-plane direction of the substrate of the base organic layer. The portion that covers the peripheral edge of the through hole may completely cover the inner peripheral surface of the through hole including the peripheral edge of the through hole.

Further, in the perforated substrate according to the embodiment, the base organic layer may contain polyimide.

Further, the perforated substrate according to another embodiment of the present disclosure includes a first surface and a substrate having a second surface located on the opposite side of the first surface and having a through hole, and the first surface. And a base organic layer containing an organic material, located on at least one of the second surfaces, a wiring layer located on the base organic layer and having conductivity, and a position in the through hole. A through electrode electrically connected to the wiring layer is provided.

In the perforated substrate according to the other embodiment, the underlying organic layer may be separated from the peripheral edge of the through hole in the in-plane direction of the substrate within a range of 5 μm or more and 10 μm or less.

In the perforated substrate according to the other embodiment, the difference in position between the base organic layer and the peripheral edge of the through hole in the in-plane direction of the substrate may be less than 5 μm.

Further, one embodiment of the present disclosure is a mounting substrate including the perforated substrate and an element electrically connected to a through electrode provided in a through hole of the perforated substrate.

Further, one embodiment of the present disclosure includes a step of preparing a substrate including a first surface and a second surface located on the opposite side of the first surface and having a through hole, and the first surface and the first surface. A step of providing a base organic layer containing an organic material on at least one of the two surfaces, wherein the base organic layer is a peripheral edge of the through hole, an outer edge of the first surface, and the second surface. A step provided so as to cover at least one of the outer edges of the surface along the normal direction and the in-plane direction of the substrate, and a step of providing a conductive wiring layer on the underlying organic layer. It is a manufacturing method of a perforated substrate.

In the method for manufacturing a perforated substrate according to an embodiment, in the step of providing the base organic layer, an organic material is provided on the first surface and the second surface of the substrate, and the organic material is provided in the through hole. By passing the organic material filled in the through hole from the first surface side to the second surface side by a laser irradiated along the normal direction of the substrate. It may include a step of forming the base organic layer that covers the first surface and the second surface and also covers the inner peripheral surface of the through hole.

The method for manufacturing a perforated substrate according to another embodiment includes a step of preparing a substrate including a first surface and a second surface located on the opposite side of the first surface and having a through hole, and the first aspect. A step of providing a base organic layer containing an organic material on at least one of one surface and the second surface, wherein the base organic layer is the peripheral edge of the through hole in the in-plane direction of the substrate. A step of providing a wiring layer having conductivity on the base organic layer and a step of providing a through electrode electrically connected to the wiring layer in the through hole are provided so as to be separated from the wiring layer. This is a method for manufacturing a perforated substrate.

The method for manufacturing a perforated substrate according to still another embodiment includes a step of preparing a substrate including a first surface and a second surface located on the opposite side of the first surface, and the first surface and the second surface. The step of providing the organic material on at least one of the surfaces, and the second surface side to the second surface by a laser irradiating the organic material and the substrate along the normal direction of the substrate. A step of forming a through hole in the substrate and forming a base organic layer containing the organic material covering at least one of the first surface and the second surface by penetrating the surface side is provided. , A method for manufacturing a perforated substrate.

According to the embodiment of the present disclosure, damage to the substrate caused by the wiring layer on the substrate can be effectively suppressed.

It is sectional drawing which shows the through silicon via substrate as an example of the perforated substrate which concerns on one Embodiment. It is sectional drawing which shows the through electrode of a through electrode substrate enlarged. It is a top view which shows the 1st surface 1st conductive layer of the through electrode substrate. It is a figure which shows the manufacturing process of the through electrode substrate. It is a figure which shows the manufacturing process of the through electrode substrate. It is a figure which shows the manufacturing process of the through electrode substrate. It is a figure which shows the manufacturing process of the through electrode substrate. It is a figure which shows the manufacturing process of the through electrode substrate. It is a figure which shows the manufacturing process of the through electrode substrate. It is a figure which shows the manufacturing process of the through electrode substrate. It is a figure which shows the manufacturing process of the through electrode substrate. It is a figure which shows the manufacturing process of the through electrode substrate. It is a figure which shows the manufacturing process of the through electrode substrate. It is a figure which shows the manufacturing process of the through electrode substrate. It is a figure which shows the manufacturing process of the through silicon via substrate which concerns on a modification. It is a figure which shows the manufacturing process of the through silicon via substrate which concerns on a modification. It is a figure which shows the manufacturing process of the through silicon via substrate which concerns on a modification. It is a figure which shows the manufacturing process of the through silicon via substrate which concerns on a modification. It is a figure which shows the manufacturing process of the through silicon via substrate which concerns on a modification. It is a figure which shows the manufacturing process of the through silicon via substrate which concerns on a modification. It is sectional drawing of the through silicon via substrate which concerns on the modification. It is a figure which shows the manufacturing process of the through silicon via substrate which concerns on a modification. It is a figure which shows the manufacturing process of the through silicon via substrate which concerns on a modification. It is sectional drawing of the through silicon via substrate which concerns on the modification. It is a figure which shows the manufacturing process of the through silicon via substrate which concerns on a modification. It is a figure which shows the manufacturing process of the through silicon via substrate which concerns on a modification. It is sectional drawing of the through silicon via substrate which concerns on the modification. It is a figure which shows the manufacturing process of the through silicon via substrate which concerns on a modification. It is a figure which shows the manufacturing process of the through silicon via substrate which concerns on a modification. It is a figure which shows the manufacturing process of the through silicon via substrate which concerns on a modification. It is sectional drawing of an example of the mounting board including a through electrode board and an element. It is a figure which shows the example of the product which mounts a through electrode substrate.

Hereinafter, the configuration of the through silicon via substrate as an example of the perforated substrate according to the embodiment of the present disclosure and the manufacturing method thereof will be described in detail with reference to the drawings. It should be noted that the embodiments shown below are examples of the embodiments of the present disclosure, and the present disclosure is not construed as being limited to these embodiments. Further, in the present specification, terms such as "board", "base material", "sheet" and "film" are not distinguished from each other based only on the difference in names. For example, "base material" and "base material" are concepts including members that can be called sheets or films. Furthermore, the terms used herein, such as "parallel" and "orthogonal", and the values of length and angle, which specify the shape and geometric conditions and their degrees, are bound by a strict meaning. Instead, the interpretation shall be made to include the range in which similar functions can be expected. Further, in the drawings referred to in the present embodiment, the same parts or parts having similar functions may be designated by the same reference numerals or similar reference numerals, and the repeated description thereof may be omitted. Further, the dimensional ratio of the drawing may differ from the actual ratio for convenience of explanation, or a part of the configuration may be omitted from the drawing.

Through Silicon Via Substrate Hereinafter, embodiments of the present disclosure will be described. First, the configuration of the through silicon via substrate 10 as an example of the perforated substrate according to the present embodiment will be described. FIG. 1 is a cross-sectional view showing a through silicon via substrate 10.

The through electrode substrate 10 includes a substrate 12, a through electrode 22, a first wiring structure portion 30, and a second wiring structure portion 40. Hereinafter, each component of the through silicon via substrate 10 will be described.

(substrate)
The substrate 12 includes a first surface 13 and a second surface 14 located on the opposite side of the first surface 13. Further, the substrate 12 is provided with a plurality of through holes 20 from the first surface 13 to the second surface 14.

The substrate 12 contains an inorganic material having a certain insulating property. For example, the substrate 12 includes a glass substrate, a quartz substrate, a sapphire substrate, a resin substrate, a silicon substrate, a silicon carbide substrate, an alumina (Al ₂ O ₃ ) substrate, an aluminum nitride (AlN) substrate, a diriconia oxide (ZrO ₂ ) substrate, and the like. Alternatively, these substrates are laminated. The substrate 12 may partially include a substrate made of a conductive material such as an aluminum substrate or a stainless steel substrate.

Examples of the glass used in the substrate 12 include non-alkali glass. Non-alkali glass is glass that does not contain alkaline components such as sodium and potassium. The non-alkali glass contains, for example, boric acid instead of the alkaline component. The non-alkali glass also contains, for example, alkaline earth metal oxides such as calcium oxide and barium oxide. Examples of non-alkali glass include EN-A1 manufactured by Asahi Glass and Eagle XG manufactured by Corning. When the substrate 12 contains glass, the thickness of the substrate 12 is, for example, 0.25 mm or more and 0.45 mm or less. Since the substrate 12 contains glass, the insulating property of the substrate 12 can be improved. As a result, when the capacitor 15 is formed by a part of the first wiring structure portion 30 as described later, the withstand voltage characteristic of the capacitor 15 can be enhanced.

In the example shown in FIG. 1, the through hole 20 formed in the substrate 12 has a shape in which the width decreases from the first surface 13 and the second surface 14 of the substrate 12 toward the central portion in the thickness direction of the substrate 12. ing. More specifically, the through hole 20 in this example has a circular shape in a plan view, and is a portion of the inner peripheral surface of the substrate 12, that is, the side wall 21 from the first surface 13 to the central portion in the thickness direction of the substrate 12, and the substrate 12. Each of the inner peripheral surface, that is, the portion of the side wall 21 from the second surface 14 to the central portion in the thickness direction of the substrate 12, is tapered toward the central portion side. However, the shape of the through hole 20 is not particularly limited. For example, the side wall 21 of the through hole 20 may extend from the second surface 14 to the first surface 13 along the normal direction of the first surface 13 of the substrate 12. Further, a part of the side wall 21 may be curved.

The length of the through hole 20, that is, the dimension of the through hole 20 in the normal direction of the first surface 13, is equal to the thickness of the substrate 12. The width of the through hole 20, that is, the dimension S (see FIG. 4) of the through hole 20 in the in-plane direction of the first surface 13 is, for example, 40 μm or more and 150 μm or less. Further, the ratio of the length to the width of the through hole 20, that is, the aspect ratio of the through hole 20, is, for example, 4 or more and 10 or less.

(Through Silicon Via)
The through electrode 22 is a member located inside the through hole 20 and having conductivity. In the present embodiment, the thickness of the through electrode 22 is smaller than the width of the through hole 20, so that there is a space inside the through hole 20 in which the through electrode 22 does not exist. That is, the through silicon via 22 is a so-called conformal via. The thickness of the through electrode 22 is, for example, 100 nm or more and 20 μm or less.

FIG. 2 is an enlarged cross-sectional view showing the through electrode 22 provided in the through hole 20. As long as the through electrode 22 has conductivity, the configuration of the through electrode 22 is not particularly limited. For example, the through silicon via 22 may be composed of a single layer having conductivity, or may include a plurality of layers having conductivity. Here, as shown in FIG. 2, an example will be described in which the through silicon via 22 includes a seed layer 221 and a plating layer 222 that are sequentially arranged from the side wall 21 side of the through hole 20 to the center side of the through hole 20.

The seed layer 221 is a conductive layer that serves as a base for growing the plating layer 222 by precipitating metal ions in the plating solution during the electrolytic plating step of forming the plating layer 222 by the electrolytic plating treatment. be. As the material of the seed layer 221, a conductive material such as copper can be used. The material of the seed layer 221 may be the same as or different from the material of the plating layer 222. The thickness of the seed layer 221 is, for example, 100 nm or more and 3 μm or less. The seed layer 221 is formed by a sputtering method, a vapor deposition method, an electroless plating method, or the like.

The plating layer 222 is a conductive layer formed by the plating treatment. As the material constituting the plating layer 222, a metal such as copper, gold, silver, platinum, rhodium, tin, aluminum, nickel, and chromium, an alloy using these, or a laminated material thereof can be used. ..

Although not shown, an intermediate layer may be provided between the side wall 21 of the through hole 20 and the seed layer 221. As the material constituting the intermediate layer, for example, titanium, titanium nitride, molybdenum, molybdenum nitride, tantalum, tantalum nitride or the like, or a laminated material thereof can be used. The thickness of the intermediate layer is, for example, 10 nm or more and 1 μm or less. The intermediate layer is formed by a physical film forming method such as a vapor deposition method or a sputtering method. The intermediate layer serves, for example, to enhance the adhesion of the seed layer 221 and the plating layer 222 to the side wall 21. Further, the intermediate layer may play a role of suppressing the diffusion of the metal element contained in the seed layer 221 or the plating layer 222 into the inside of the substrate 12 through the side wall 21 of the through hole 20.

(1st wiring structure part)
Next, the first wiring structure portion 30 will be described. The first wiring structure portion 30 has a layer such as a conductive layer or an insulating layer provided on the first surface 13 side so as to form an electric circuit on the first surface 13 side of the substrate 12. In the present embodiment, the capacitor 15 is configured by a part of the first wiring structure portion 30. Further, a part of the inductor 16 is formed by a part of the first wiring structure portion 30. In the present embodiment, the first wiring structure portion 30 includes the first surface organic layer 30A, the first surface first conductive layer 31, the first surface first inorganic layer 32, the first surface second conductive layer 33, and the first surface. It has a first surface first coated organic layer 34, a first surface third conductive layer 35, and a first surface second coated organic layer 36.

[First surface organic layer]
The first surface underlying organic layer 30A is a layer that is located on the first surface 13 of the substrate 12, contains an organic material, and has an insulating property. As the organic material of the first surface underlying organic layer 30A, polyimide, epoxy or the like can be used. The organic material of the first surface underlying organic layer 30A has a dielectric loss tangent of preferably 0.003 or less, more preferably 0.002 or less, still more preferably 0.001 or less.

As shown in FIGS. 1 and 2, in the illustrated first surface underlying organic layer 30A, the peripheral edge 20P1 of the through hole 20 on the first surface 13 side and the outer edge 13P of the first surface 13 are oriented in the normal direction of the substrate 12. And covers along the in-plane direction. Covering the substrate 12 along the normal direction means that, for example, a part of the first surface underlying organic layer 30A is located on a straight line extending along the normal direction from the peripheral edge 20P1, and the peripheral edge 20P1 is located along the normal direction. When viewed, it means that a part of the first surface underlying organic layer 30A and the peripheral edge 20P1 overlap. Further, covering along the in-plane direction of the substrate 12 means that, for example, a part of the first surface underlying organic layer 30A is located on a straight line extending from the peripheral edge 20P1 along the in-plane direction, and the peripheral edge is along the in-plane direction. When looking at 20P1, it means that a part of the first surface underlying organic layer 30A and the peripheral edge 20P1 overlap.

That is, the first surface underlying organic layer 30A extends from the flat portion 30B extending on the first surface 13 and extending from the flat portion 30B to the inside of the through hole 20 via the peripheral edge 20P1 of the through hole 20, or the flat portion. It has an extension portion 30C extending from 30B to the side portion 12S of the substrate 12 via the outer edge 13P of the first surface 13. The extension portion 30C is adjacent to the peripheral edge 20P1 of the through hole 20 or the outer edge 13P of the first surface 13 in the in-plane direction, thereby covering the peripheral edge 20P1 or the outer edge 13P along the in-plane direction of the substrate 12. The in-plane direction means a direction extending along the first surface 13 and the second surface 14 which are the main surfaces of the substrate 12, and in this example, the direction extending orthogonally to the normal direction of the substrate 12. The direction is parallel to the first surface 13 and the second surface 14.

The thickness of the first surface underlying organic layer 30A is, for example, 500 nm or more and 30 μm or less. The flat portion 30B is preferably 500 nm or more and 30 μm or less, and the extension portion 30C is preferably 100 nm or more and 30 μm or less.

In the illustrated example, the extension portion 30C extending inward of the through hole 20 partially covers the inner peripheral surface of the through hole 20, that is, the side wall 21. Specifically, as is clear from the illustration, the extension portion 30C in the through hole 20 is the end portion of both ends of the inner peripheral surface of the tapered through hole 20 having a wider width in the in-plane direction of the substrate 12. It is provided on the side and not on the narrower end side. That is, in this example, the extension portion 30C is provided on the large-diameter end side of the inner peripheral surface of the tapered through hole 20 having a circular cross section, and is a small-diameter end portion having a smaller diameter than the end portion. Not provided on the side. However, instead of such an embodiment, the extension portion 30C in the through hole 20 may completely cover the inner peripheral surface of the through hole 20. On the other hand, the extension portion 30C extending to the side portion 12S of the substrate 12 via the outer edge 13P of the first surface 13 is coupled to the extension portion 40C provided in the second surface underlying organic layer 40A located on the second surface 14 described later. ing. As a result, in the illustrated example, the side portion 12S of the substrate 12 is entirely covered with the underlying organic layer (30A, 40A). However, the extension portion 30C may not be coupled to the extension portion 40C and may partially cover the side portion 12S. Further, in this example, the tapered through hole 20 has a tapered shape having a circular cross section as described above, but the tapered through hole 20 is not limited to this embodiment, and the cross section is, for example, an elliptical shape. Or, it may be a hole having a rectangular shape.

By providing the first surface underlying organic layer 30A, the through electrode 22 is located so as to straddle the through hole 20 and the first surface underlying organic layer 30A. As a result, the through electrode 22 covers the extension portion 30C located in the through hole 20 of the first surface underlying organic layer 30A. In the present embodiment, the first surface underlying organic layer 30A covers the peripheral edge 20P1 of the through hole 20 and the outer edge 13P of the first surface 13 along the normal direction and the in-plane direction of the substrate 12. The first surface underlying organic layer 30A may be configured to cover only one of these.

[First surface, first conductive layer]
The first surface first conductive layer 31 is a layer having conductivity located on the first surface underlying organic layer 30A, and is a layer that functions as a wiring layer. The first surface first conductive layer 31 may be electrically connected to the through electrode 22. In the illustrated example, the through electrode 22 is electrically connected to the first surface first conductive layer 31. .. Further, the first surface first conductive layer 31 may be composed of a single layer having conductivity, or may include a plurality of layers having conductivity. For example, the first surface first conductive layer 31 may include a seed layer 221 and a plating layer 222 sequentially laminated on the first surface 13 of the substrate 12, similarly to the through silicon via 22. The material constituting the first surface first conductive layer 31 is the same as the material constituting the through electrode 22. The thickness of the first conductive layer 31 on the first surface is, for example, 100 nm or more and 20 μm or less.

[First surface, first inorganic layer]
The first surface first inorganic layer 32 is a layer that is at least partially located on the first surface first conductive layer 31 and the first surface underlying organic layer 30A, contains an inorganic material, and has an insulating property. As the inorganic material of the first surface first inorganic layer 32, a silicon nitride such as SiN can be used. In addition, examples of the inorganic material of the first surface first inorganic layer 32 include silicon oxide, aluminum oxide, and tantalum pentoxide. The relative permittivity of the inorganic material of the first surface first inorganic layer 32 is, for example, 3 or more and 50 or less. The thickness of the first surface first inorganic layer 32 is, for example, 50 nm or more and 400 nm or less. The first surface first inorganic layer 32 may be composed of a single layer or may include a plurality of layers.

[First surface, second conductive layer]
The first surface second conductive layer 33 is a layer having conductivity located on the first surface first inorganic layer 32. As shown in FIG. 1, the end portion 33e of the first surface second conductive layer 33 is located on the first surface first inorganic layer 32. The above-mentioned first surface first conductive layer 31, the above-mentioned first surface first inorganic layer 32 located on the first surface first conductive layer 31, and the first surface located on the first surface first inorganic layer 32. The surface second conductive layer 33 constitutes the capacitor 15.

Similar to the through silicon via 22 and the first surface first conductive layer 31, the first surface second conductive layer 33 may include a seed layer and a plating layer sequentially laminated on the first surface first inorganic layer 32. good. The material constituting the first surface second conductive layer 33 is the same as the material constituting the through electrode 22 and the first surface first conductive layer 31. The thickness of the first surface second conductive layer 33 is, for example, 100 nm or more and 20 μm or less.

[First surface, first coated organic layer]
The first surface first coated organic layer 34 is located on the first surface first inorganic layer 32 and on the first surface second conductive layer 33, and is a layer containing an organic material and having an insulating property. As the organic material of the first coated organic layer 34 on the first surface, polyimide, epoxy or the like can be used. The organic material of the first surface first coated organic layer 34 has a dielectric loss tangent of preferably 0.003 or less, more preferably 0.002 or less, still more preferably 0.001 or less. By constructing the first surface first-coated organic layer 34 using an organic material having a small dielectric loss tangent, it is possible that an electric signal to pass through the capacitor 15 and the inductor 16 passes through the first surface first-coated organic layer 34. It can be suppressed. As a result, the band of the through silicon via substrate 10 including the capacitor 15 and the inductor 16 can be expanded to the high frequency side.

[First surface, third conductive layer]
The first surface third conductive layer 35 is a layer having conductivity located on the first surface first conductive layer 31 or the first surface second conductive layer 33. In the example shown in FIG. 1, the first surface third conductive layer 35 is a portion connected to the first surface first conductive layer 31 which is one electrode of the capacitor 15, and the other electrode of the capacitor 15. The portion connected to the second conductive layer 33 on the first surface is included.

The first surface third conductive layer 35 may include a seed layer and a plating layer laminated in order, similarly to the through electrode 22 and the first surface first conductive layer 31. The material constituting the first surface third conductive layer 35 is the same as the material constituting the through electrode 22 and the first surface first conductive layer 31.

[First surface, second coated organic layer]
The first surface second coated organic layer 36 is a layer located on the first surface first coated organic layer 34 and on the first surface third conductive layer 35, containing an organic material, and having an insulating property. Similar to the first surface first-coated organic layer 34, the first surface second-coated organic layer 36 preferably has a dielectric loss tangent of 0.003 or less, more preferably 0.002 or less, still more preferably 0.001 or less. Includes organic materials that have. As the organic material of the first surface second coated organic layer 36, polyimide, epoxy or the like can be used as in the case of the first surface first coated organic layer 34.

(2nd wiring structure part)
Next, the second wiring structure unit 40 will be described. The second wiring structure portion 40 has a layer such as a conductive layer or an insulating layer provided on the second surface 14 side so as to form an electric circuit on the second surface 14 side of the substrate 12. The inductor 16 is composed of a part of the second wiring structure part 40, a part of the first wiring structure part 30 described above, and the through silicon via 22. In the present embodiment, the second wiring structure portion 40 has a second surface underlying organic layer 40A, a second surface first conductive layer 41, and a second surface first coated organic layer 43.

[Second surface organic layer]
The second surface underlying organic layer 40A is a layer that is located on the second surface 14 of the substrate 12, contains an organic material, and has an insulating property. As the organic material of the second surface base organic layer 40A, polyimide, epoxy or the like can be used. The organic material of the second surface underlying organic layer 40A has a dielectric loss tangent of preferably 0.003 or less, more preferably 0.002 or less, still more preferably 0.001 or less.

As shown in FIGS. 1 and 2, in the illustrated second surface underlying organic layer 40A, the peripheral edge 20P2 of the through hole 20 on the second surface 14 side and the outer edge 14P of the second surface 14 are oriented in the normal direction of the substrate 12. And covers along the in-plane direction. That is, the second surface underlying organic layer 40A extends from the flat portion 40B extending on the second surface 14 and extending from the flat portion 40B to the inside of the through hole 20 via the peripheral edge 20P2 of the through hole 20, or the flat portion. It has an extension portion 40C extending from 40B to the side portion 12S of the substrate 12 via the outer edge 14P of the second surface 14. The extension portion 40C is adjacent to the peripheral edge 20P2 of the through hole 20 or the outer edge 14P of the second surface 14 in the in-plane direction, thereby covering the peripheral edge 20P2 or the outer edge 14P along the in-plane direction of the substrate 12.

The thickness of the second surface underlying organic layer 40A is, for example, 500 nm or more and 30 μm or less, similarly to the first surface underlying organic layer 30A. The flat portion 40B is preferably 500 nm or more and 30 μm or less, and the extension portion 40C is preferably 100 nm or more and 30 μm or less.

In the illustrated example, the extension portion 40C extending inward of the through hole 20 partially covers the inner peripheral surface of the through hole 20, that is, the side wall 21. That is, similarly to the extension portion 30C of the first surface underlying organic layer 30A, the extension portion 40C in the through hole 20 is provided on the end side of the large diameter of the inner peripheral surface of the tapered through hole 20 and has a small diameter. Not provided on the end side. However, instead of such an embodiment, the extension portion 40C in the through hole 20 may completely cover the inner peripheral surface of the through hole 20. On the other hand, the extension portion 40C extending to the side portion 12S of the substrate 12 via the outer edge 14P of the second surface 14 is bonded to the extension portion 30C of the first surface underlying organic layer 30A as described above. The extension portion 40C may not be connected to the extension portion 30C.

By providing the second surface underlying organic layer 40A, the through electrode 22 is located so as to straddle the through hole 20 and the second surface underlying organic layer 40A. As a result, the through electrode 22 covers the extension portion 40C located in the through hole 20 of the second surface underlying organic layer 40A. In the present embodiment, the second surface underlying organic layer 40A covers the peripheral edge 20P2 of the through hole 20 and the outer edge 14P of the second surface 14 along the normal direction and the in-plane direction of the substrate 12. The second surface underlying organic layer 40A may be configured to cover only one of these.

[Second surface, first conductive layer]
The second surface first conductive layer 41 is a layer having conductivity located on the second surface underlying organic layer 40A, and is a layer that functions as a wiring layer. The second surface first conductive layer 41 may be connected to the through electrode 22, and in the illustrated example, the through electrode 22 is connected to the second surface first conductive layer 41. Further, the second surface first conductive layer 41 includes a seed layer 221 and a plating layer 222 sequentially laminated on the second surface 14 of the substrate 12, similarly to the through electrode 22 and the first surface first conductive layer 31. You may be. The material constituting the second surface first conductive layer 41 is the same as the material constituting the through electrode 22. The thickness of the first conductive layer 41 on the second surface is, for example, 100 nm or more and 20 μm or less.

FIG. 3 is a plan view showing a case where the first surface first conductive layer 31 and the second surface first conductive layer 41 of the through electrode substrate 10 are viewed from the first surface 13 side. In FIG. 3, layers such as the first surface first inorganic layer 32 laminated on the first surface first conductive layer 31 are omitted. Further, in FIG. 3, the second surface first conductive layer 41 located on the second surface 14 side is represented by a dotted line. As shown in FIGS. 1 and 3, the first surface first conductive layer 41, the through electrode 22 connected to the second surface first conductive layer 41, and the first surface first conductive layer connected to the through electrode 22. The layer 31 constitutes the inductor 16.

[Second surface, first coated organic layer]
The second surface first coated organic layer 43 is located on the second surface first conductive layer 41 and on the second surface underlying organic layer 40A, contains an organic material, and has an insulating property. The second surface first-coated organic layer 43 is preferably 0.003 or less, more preferably 0.002 or less, and further, like the first surface first-coated organic layer 34 and the first surface second-coated organic layer 36. It preferably contains an organic material having a dielectric loss tangent of 0.001 or less. As the organic material of the second surface first-coated organic layer 43, polyimide, epoxy or the like can be used as in the case of the first surface first-coated organic layer 34 and the first surface second-coated organic layer 36.

Manufacturing Method of Through Silicon Via Substrate An example of a manufacturing method of the through silicon via substrate 10 as an example of a perforated substrate will be described below with reference to FIGS. 4 to 14.

(Through hole forming process)
First, the substrate 12 is prepared. Next, a resist layer is provided on at least one of the first surface 13 and the second surface 14. After that, an opening is provided in the resist layer at a position corresponding to the through hole 20. Next, by processing the substrate 12 at the opening of the resist layer, a through hole 20 can be formed in the substrate 12 as shown in FIG. As a method for processing the substrate 12, a dry etching method such as a reactive ion etching method or a deep digging reactive ion etching method, a wet etching method, or the like can be used.

The through hole 20 may be formed in the substrate 12 by irradiating the substrate 12 with a laser. In this case, the resist layer may not be provided. As the laser for laser processing, an excimer laser, an Nd: YAG laser, a femtosecond laser, or the like can be used. When the Nd: YAG laser is adopted, a fundamental wave having a wavelength of 1064 nm, a second harmonic having a wavelength of 532 nm, a third harmonic having a wavelength of 355 nm, and the like can be used.

Further, laser irradiation and wet etching can be appropriately combined. Specifically, first, the altered layer is formed in the region of the substrate 12 where the through hole 20 should be formed by laser irradiation. Subsequently, the substrate 12 is immersed in hydrogen fluoride or the like to etch the altered layer. As a result, the through hole 20 can be formed in the substrate 12. In addition, a through hole 20 may be formed in the substrate 12 by a blast treatment of spraying an abrasive on the substrate 12.

By processing the substrate 12 from both the first surface 13 side and the second surface 14 side, a through hole 20 having a shape whose width decreases toward the central portion in the thickness direction of the substrate 12 as shown in FIG. 4 is formed. can do.

(Underground organic layer forming process)
Next, the first surface organic layer 30A and the second surface organic layer 40A are formed. In the illustrated example, first, as shown in FIG. 5, a first photosensitive film 51 as an organic material containing polyimide as a main component is laminated on the first surface 13 of the substrate 12, and polyimide is laminated on the second surface 14. The second photosensitive film 52 as an organic material containing an agent as a main component is laminated.

In this example, each of the photosensitive films 51 and 52 is a resin whose solubility is increased by being irradiated with an electromagnetic wave or a charged particle beam, for example, a positive photosensitive resin. Each of the photosensitive films 51 and 52 is fixed on the substrate 12 by being pressed against the substrate 12 by, for example, using a roller. At this time, the photosensitive films 51 and 52 are preferably pressed against the substrate 12 while being heated, and in this case, they are more firmly fixed on the substrate 12.

Then, as shown in FIG. 5, the portion of each of the photosensitive films 51 and 52 located on the through hole 20 is irradiated with light L as an electromagnetic wave or a charged particle beam. In the illustrated example, the first photosensitive film 51 is irradiated with light L from the outside (upper side in the figure) along the normal direction of the substrate 12, and the second photosensitive film 52 is irradiated with light L in the normal direction of the substrate 12. Light L is emitted from the outside (lower side in the figure) along the line. The timing at which such light L is irradiated may be simultaneous or different for the first photosensitive film 51 and the second photosensitive film 52.

After that, by supplying the developing solution to the photosensitive films 51 and 52, as shown in FIG. 6, holes leading to the through holes 20 are formed in the portions of the photosensitive films 51 and 52 located on the through holes 20. As a result, the first surface underlying organic layer 30A on the first surface 13 and the second surface underlying organic layer 40A on the second surface 14 are formed. Here, as described above, the first photosensitive film 51 is irradiated with light L from the outside (upper side in the drawing) along the normal direction of the substrate 12, and the second photosensitive film 52 is exposed to the substrate. By irradiating light L from the outside (lower side in the figure) along the normal direction of 12, in this example, a part of the melted resin enters the inner peripheral surface side of the through hole 20 and develops. It will remain later. As a result, the extension portion 30C extending to the through hole 20 is formed in the first surface base organic layer 30A, and the extension portion 40C extending to the through hole 20 is formed in the second surface base organic layer 40A. Become.

According to the diligent research and experiment of the inventor of the present invention, light L is photosensitive within a range of an outer diameter of about 1.1 to 1.2 times the inner diameter of the peripheral edges 20P1 and 20P2 of the through hole 20. It has been found that the extension portions 30C and 40C can be appropriately formed when the films 51 and 52 are irradiated. For example, when the thickness of the substrate 12 is 400 μm and the inner diameters of the peripheral edges 20P1 and 20P2 are 85 μm, the appropriate extension portions 30C and 40C can be provided by irradiating light L within the range where the outer diameter is 100 μm. It has been confirmed that it could be formed. Further, when the thickness of the substrate 12 is 300 μm and the inner diameters of the peripheral edges 20P1 and 20P2 are 75 μm, the appropriate extension portions 30C and 40C are provided by irradiating light L within the range where the outer diameter is 90 μm. It has been confirmed that it could be formed. Since the size of such suitable light L varies depending on the thickness of the substrate 12, the material of the photosensitive films 51 and 52, and the like, the relationship between the inner diameter dimensions of the peripheral edges 20P1 and 20P2 and the light L is described above. It is not limited to what you have done.

Further, in FIG. 6, the extension portions 30C and 40C extending to the side portion 12S of the substrate 12 are not shown, but these extension portions 30C and 40C, for example, press the photosensitive films 51 and 52 against the side portion 12S. It may be formed by fixing. Further, in this example, the photosensitive films 51 and 52 are positive photosensitive resins, but the photosensitive films 51 and 52 may be negative photosensitive resins. In this case, the light is applied to the portions of the photosensitive films 51 and 52 that do not form holes.

(Through Silicon Via Forming Process)
Next, the through electrode 22 is formed on the side wall 21 of the through hole 20. In the present embodiment, at the same time as the through silicon via 22, the first surface first conductive layer 31 is formed on a part of the first surface underlying organic layer 30A, and the second surface is formed on a part of the second surface underlying organic layer 40A. An example of forming the first conductive layer 41 will be described.

As shown in FIG. 7, a seed layer 221 is formed on the first surface organic layer 30A, on the second surface organic layer 40A, and on the side wall 21 of the through hole 20 by a sputtering method, a vapor deposition method, an electroless plating method, or the like. Form. Subsequently, as shown in FIG. 8, a resist layer 37 is partially formed on the seed layer 221. Subsequently, as shown in FIG. 9, the plating layer 222 is formed on the seed layer 221 not covered by the resist layer 37 by electrolytic plating. Then, as shown in FIG. 10, the resist layer 37 is removed. Further, the portion of the seed layer 221 covered with the resist layer 37 is removed by, for example, wet etching. In this way, the through silicon via 22, the first surface first conductive layer 31 and the second surface first conductive layer 41 can be formed. As a result, the inductor 16 including the second surface first conductive layer 41, the through electrode 22 connected to the second surface first conductive layer 41, and the first surface first conductive layer 31 connected to the through electrode 22. Can be configured. The step of annealing the plating layer 222 may be carried out.

(Step of forming the first inorganic layer on the first surface)
Next, as shown in FIG. 11, the first surface first inorganic layer 32 is formed over the entire area on the first surface first conductive layer 31. As a method for forming the first surface first inorganic layer 32, for example, plasma CVD, sputtering, or the like can be adopted. Preferably, the step of forming the first surface first inorganic layer 32 is continuously carried out in the same apparatus as in the case of the step of forming the first surface first conductive layer 31 and the surface treatment step. These steps are preferably carried out in an atmosphere in which oxidation of the first surface first conductive layer 31 is suppressed, for example, in an atmosphere of a reducing gas such as ammonia gas.

(Step of forming the first surface and the second conductive layer)
Next, as shown in FIG. 12, the first surface second conductive layer 33 is formed on a part of the first surface first inorganic layer 32. As a result, the first surface first conductive layer 31, the first surface first inorganic layer 32 on the first surface first conductive layer 31, and the first surface second conductive layer on the first surface first inorganic layer 32. A capacitor 15 including 33 can be configured. Since the step of forming the first surface second conductive layer 33 is the same as the step of forming the first surface first conductive layer 31, the description thereof will be omitted.

(Step of forming the first coated organic layer on the first surface)
Next, as shown in FIG. 13, the first surface first coated organic layer 34 is formed on a part of the first surface second conductive layer 33 and on a part of the first surface first inorganic layer 32. For example, first, a first-side film having a photosensitive layer containing an organic material and a base material is attached to the first-side 13 side of the substrate 12. Subsequently, the first side film is subjected to exposure processing and development processing. As a result, the first surface first-coated organic layer 34, which is composed of the photosensitive layer of the first surface side film and has the opening 34a formed therein, can be formed on the first surface 13 side of the substrate 12. At this time, as in the case of the first surface first coated organic layer 34, as shown in FIG. 13, the first surface is on a part of the second surface underlying organic layer 40A and on a part of the second surface first conductive layer 41. The two-sided first-coated organic layer 43 may be formed.

The opening 34a of the first surface first coated organic layer 34 is a position where the first surface third conductive layer 35 and the first surface first conductive layer 31 are connected, the first surface third conductive layer 35 and the first surface. It is formed on the first surface first inorganic layer 32 at a position where the surface second conductive layer 33 is connected or the like.

The method of forming the first surface first-coated organic layer 34 and the second surface first-coated organic layer 43 is not limited to the method using a film. For example, first, a liquid containing an organic material such as polyimide is applied by a spin coating method or the like, and dried to form an organic layer. Subsequently, the organic layer can be exposed and developed to form the first surface first-coated organic layer 34 and the second surface first-coated organic layer 43.

(Step of forming the first surface and the third conductive layer)
Next, as shown in FIG. 14, the first surface connected to the first surface first conductive layer 31 or the first surface second conductive layer 33 via the opening 34a of the first surface first coated organic layer 34. The third conductive layer 35 is formed. Since the step of forming the first surface third conductive layer 35 is the same as the step of forming the first surface first conductive layer 31, the description thereof will be omitted.

(Step of forming the first surface and the second coated organic layer)
After that, the first surface second coated organic layer 36 is formed on a part of the first surface first coated organic layer 34 and on a part of the first surface third conductive layer 35. As a result, the through silicon via substrate 10 shown in FIG. 1 can be obtained. The method for forming the first surface second coated organic layer 36 is not particularly limited. For example, as in the case of the first surface first-coated organic layer 34, the first surface second-coated organic layer 36 can be formed by using a film or liquid containing an organic material.

Hereinafter, the action brought about by this embodiment will be described.

In the present embodiment, the heat of the wiring layer is generated by the underlying organic layers 30A and 40A located between the substrate 12 and the first surface first conductive layer 31 and the second surface first conductive layer 41 corresponding to the wiring layer. The stress of the substrate 12 caused by deformation or the like is relaxed. In particular, the underlying organic layers 30A and 40A cover the peripheral edges 20P1, 20P2 of the through hole 20, the outer edge 13P of the first surface 13, and the outer edge 14P of the second surface 14 along the in-plane direction, so that the in-plane generated in the substrate 12 is formed. The stress in the direction is relaxed by the underlying organic layers 30A and 40A. As a result, damage to the substrate 12 caused by the wiring layer on the substrate 12 can be effectively suppressed.

Further, since the underlying organic layers 30A and 40A cover the peripheral edges 20P1 and 20P2 of the through holes 20 along the in-plane direction, the underlying organic layers 30A and 40A form the through electrodes 22 and the substrate 12 in the in-plane direction. It will be located in between. As a result, the in-plane stress that may occur in the substrate 12 due to the through electrode 22 is also suppressed by the underlying organic layers 30A and 40A, so that damage on the peripheral edges 20P1 and 20P2 of the through hole 20 is effectively suppressed. be able to.

Further, in the present embodiment, the portions of the underlying organic layers 30A and 40A located in the through hole 20, that is, the extension portions 30C and 40C are end portions having a large diameter on the inner peripheral surface of the tapered through hole 20. It is provided on the side and not on the end side of the small diameter. As a result, the underlying organic layers 30A and 40A are positioned so as to suppress the dimensional change of the inner peripheral surface of the through hole 20, so that the thickness of the through electrode 22 can be easily made uniform and the variation in the conductivity of the through electrode 22 can be suppressed. It becomes easier to do.

It is possible to make various changes to the above-described embodiment. Hereinafter, modification examples will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, the same reference numerals as those used for the corresponding portions in the above-described embodiment will be used for the portions that can be configured in the same manner as in the above-described embodiment. Duplicate explanations will be omitted. Further, when it is clear that the action and effect obtained in the above-described embodiment can be obtained in the modified example, the description thereof may be omitted.

(First modification)
15 to 17 are views showing a manufacturing process of the through silicon via substrate 10 according to the first modification. In the manufacturing method according to the first modification, first, as shown in FIG. 15, the substrate 12 is prepared and the through hole 20 is formed. Next, the first surface organic layer 30A and the second surface organic layer 40A are formed. At this time, in this modification, first, the first photosensitive film 51 as an organic material is laminated on the first surface 13 of the substrate 12, and the second photosensitive film 52 as an organic material is laminated on the second surface 14. Laminate. Each of the photosensitive films 51 and 52 is fixed on the substrate 12 by being pressed against the substrate 12 by, for example, using a roller. At this time, in this modification, as shown in FIG. 16, each photosensitive film 51, 52 is a substrate 12 so that a part of each photosensitive film 51, 52 partially enters the inside of the through hole 20. Fixed on top. Here, it is preferable that the photosensitive films 51 and 52 are pressed against the substrate 12 while being heated. In this case, a part of the photosensitive films 51 and 52 easily enters the inside of the through hole 20. ..

Subsequently, the portion of each of the photosensitive films 51 and 52 located on the through hole 20 is irradiated with light L as an electromagnetic wave or a charged particle beam. After that, by supplying the developing solution to the photosensitive films 51 and 52, as shown in FIG. 17, holes leading to the through holes 20 are formed in the portions of the photosensitive films 51 and 52 located on the through holes 20. Will be done. As a result, the first surface organic layer 30A on the first surface 13 is formed, and the second surface organic layer 40A on the second surface 14 is formed. In this modification, as described above, the photosensitive films 51 and 52 are fixed to the substrate 12 so that the photosensitive films 51 and 52 partially enter the inside of the through hole 20, and in this state, the photosensitive film is formed. Light L is applied to the portions of 51 and 52 located on the through hole 20. This makes it possible to easily form the extension portions 30C and 40C in the underlying organic layers 30A and 40A.

(Second modification)
18 to 20 are views showing a manufacturing process of the through silicon via substrate 10 according to the second modification. In the manufacturing method according to the second modification, first, as shown in FIG. 18, the substrate 12 is prepared and the through hole 20 is formed. Next, the first surface organic layer 30A and the second surface organic layer 40A are formed. At this time, in this modification, first, the first photosensitive film 51 as an organic material is laminated on the first surface 13 of the substrate 12, and the second photosensitive film 52 as an organic material is laminated on the second surface 14. Laminate. Each of the photosensitive films 51 and 52 is fixed on the substrate 12 by being pressed against the substrate 12 by, for example, using a roller. At this time, in this modification, as shown in FIG. 19, each of the photosensitive films 51 and 52 is a substrate 12 so that a part of each of the photosensitive films 51 and 52 penetrates into the inside of the through hole 20 as a whole. Fixed on top. Here, it is preferable that the photosensitive films 51 and 52 are pressed against the substrate 12 while being heated. In this case, a part of the photosensitive films 51 and 52 easily enters the inside of the through hole 20. .. Further, when the first photosensitive film 51 is laminated on the first surface 13 of the substrate 12 and the second photosensitive film 52 is laminated on the second surface 14, the through hole 20 is sealed, and the through hole at this time is sealed. It is also preferable to press the first photosensitive film 51 and the second photosensitive film 52 against the substrate 12 in an environment where the pressure is higher than the internal pressure of 20.

Subsequently, the portion of each of the photosensitive films 51 and 52 located on the through hole 20 is irradiated with light L as an electromagnetic wave or a charged particle beam. After that, by supplying the developing solution to the photosensitive films 51 and 52, as shown in FIG. 20, holes passing through the through holes 20 are formed in the portions of the photosensitive films 51 and 52 located on the through holes 20. It is formed. As a result, the first surface organic layer 30A on the first surface 13 is formed, and the second surface organic layer 40A on the second surface 14 is formed. In this modification, as described above, the photosensitive films 51 and 52 are fixed to the substrate 12 so that a part of the photosensitive films 51 and 52 penetrates into the through hole 20 as a whole, and in this state, the photosensitive films 51 and 52 are fixed to the substrate 12. Light L is applied to a portion of the photosensitive films 51 and 52 located on the through hole 20. This makes it possible to reliably form the extension portions 30C and 40C in the underlying organic layers 30A and 40A. In the illustrated example, the extension portions 30C and 40C in the through hole 20 are connected to each other and completely cover the inner peripheral surface of the through hole 20 including the peripheral edge of the through hole 20, but these are separated. You may be doing it.

(Third modification example)
FIG. 21 is a cross-sectional view of the through silicon via substrate 10 according to the third modification. In the through electrode substrate 10 according to the third modification, the through hole 20 of the substrate 12 has a tapered shape, and the through hole 20 has an end portion on the first surface 13 side and a large diameter side, and the through hole 20 has a second surface. It has an end on the small diameter side on the 14 side.

(Fourth modification)
22 and 23 are views showing a manufacturing process of the through silicon via substrate 10 according to the fourth modification. In the manufacturing method according to the fourth modification, first, as shown in FIG. 22, the substrate 12 on which the through hole 20 is formed is prepared, and then the first surface underlying organic layer 30A and the second surface underlying organic layer 40A are formed. Form. At this time, in this modification, first, the first organic material film 51A as an organic material is laminated on the first surface 13 of the substrate 12, and the second organic material film 52A as an organic material is laminated on the second surface 14. Stack. Each of the films 51A and 52A is fixed on the substrate 12 by being pressed against the substrate 12 by, for example, using a roller. At this time, in this modification, the films 51A and 52A are fixed on the substrate 12 so that a part of the films 51A and 52A completely enters and fills the inside of the through hole 20. Here, the films 51A and 52A are preferably pressed against the substrate 12 while being heated, and in this case, a part of the films 51A and 52A easily enters the inside of the through hole 20. Further, when the first organic material film 51A is laminated on the first surface 13 of the substrate 12 and the second organic material film 52A is laminated on the second surface 14, the through hole 20 is sealed, and the through hole at this time is sealed. It is also preferable to press the first organic material film 51A and the second organic material film 52A against the substrate 12 in an environment of a pressure higher than the internal pressure of 20.

Subsequently, the laser La is irradiated along the normal direction of the substrate 12 to the portion of the films 51A and 52A located on the through hole 20, in other words, the organic material filled in the through hole 20. In this example, the laser La is irradiated from the first surface 13 side and the second surface 14 side. As a result, as shown in FIG. 23, the organic material filled in the through hole 20 is penetrated from the first surface 13 side to the second surface 14 side to cover the first surface 13 and the inner circumference of the through hole 20. The first surface underlying organic layer 30A on the first surface 13 that covers the surface is formed, and the second surface underlying organic layer on the second surface 14 that covers the second surface 14 and the inner peripheral surface of the through hole 20 is formed. 40A is formed.

In this modification, as described above, the films 51A and 52A are fixed to the substrate 12 so that a part of the organic material films 51A and 52A completely penetrates into the through hole 20, and in this state, each of them. Laser La is applied to the portion of the films 51A and 52A located on the through hole 20. This makes it possible to reliably form the extension portions 30C and 40C in the underlying organic layers 30A and 40A. In the illustrated example, the extension portions 30C and 40C in the through hole 20 are connected to each other and completely cover the inner peripheral surface of the through hole 20 including the peripheral edge of the through hole 20, but these are separated. You may be doing it.

Further, in this modification, the organic material for forming the underlying organic layers 30A and 40A does not require photosensitivity. Therefore, by using a non-photosensitive organic material as the organic material for forming the underlying organic layers 30A and 40A, the dielectric loss tangent can be suppressed low.

The non-photosensitive organic material for suppressing the dielectric loss tangent of the underlying organic layers 30A and 40A has a dielectric loss tangent at 10 GHz, for example, less than 0.01, preferably less than 0.006, and more preferably 0.004. It may be less than. Examples of the resin having such a dielectric loss tangent include an epoxy resin, a polyphenylene ether resin, a fluorine resin such as a polytetrafluoroethylene resin, and the like. Specific examples of the epoxy resin include GY11, GL102, GL103 manufactured by Ajinomoto Fine-Techno Co., Ltd., Zaristo517X manufactured by Taiyo Ink Mfg. Co., Ltd., and the like. Specific examples of the polyphenylene ether-based resin include NC0209 manufactured by Namics Co., Ltd. Specific examples of the fluororesin include Cytop and EPRIMA AL manufactured by Asahi Glass Co., Ltd.

The laser La to be irradiated in this example is selected according to the organic material for forming the underlying organic layers 30A and 40A. The laser La is an excimer laser, an Nd: YAG laser, a femtosecond laser, or the like. May be good.

( Other embodiments)
FIG. 24 is a cross-sectional view of a perforated substrate according to another embodiment, and FIGS. 25 and 26 are views showing a method of manufacturing the perforated substrate shown in FIG. 24. The perforated substrate shown in FIG. 24 is located on the first surface 13 and the substrate 12 including the second surface 14 located on the opposite side of the first surface 13 and provided with the through holes 20 and the first surface 13. A first surface underlying organic layer 30A containing an organic material, a second surface underlying organic layer 40A located on the second surface 14 and containing an organic material, and a second surface underlying organic layer 30A located on the first surface underlying organic layer 30A and having conductivity. The first conductive layer 31 on the first surface, the first conductive layer 41 on the second surface located on the organic layer 40A under the second surface, and the first conductive layer 41 on the second surface, and the conductive layers 31 and 41 located in the through holes 20, respectively. It includes a through electrode 22 that is electrically connected.

In the perforated substrate according to this example, since the underlying organic layer is provided between the end portion of the conductive layer which is the wiring layer and the substrate 12, cracks occur in the portion of the substrate 12 facing the end portion of the wiring layer. Is less likely to occur. Further, in this example, the first surface base organic layer 30A and the second surface base organic layer 40A do not enter the inside of the through hole 20. More specifically, the first surface organic layer 30A and the second surface organic layer 40A are separated from the peripheral edge of the through hole 20 in the in-plane direction of the substrate 12. Specifically, in this example, the first surface organic layer 30A and the second surface organic layer 40A are separated from the peripheral edge of the through hole 20 in the in-plane direction of the substrate 12 within a range of 5 μm or more and 10 μm or less. The first surface underlying organic layer 30A and the second surface underlying organic layer 40A are separated from the peripheral edge of the through hole 20 in the in-plane direction of the substrate 12 in the range of 5 μm or more and 20 μm or less, more preferably 5 μm or more and 10 μm or less. As a result, when forming the through electrode 22, the underlying organic layers 30A and 40A do not get in the way, and it becomes easy to form the through electrode 22 in which suitable conductivity is ensured. Further, since the underlying organic layers 30A and 40A are not too far from the peripheral edge of the through hole 20, it is possible to suppress the occurrence of cracks on the peripheral edge of the through hole 20 due to the influence of the conductive layers 31 and 41 which are wiring layers.

When manufacturing the perforated substrate shown in FIG. 24, first, as shown in FIG. 25, a substrate 12 provided with a through hole 20 is prepared, and then a first surface base is formed on the first surface 13 of the substrate 12. The organic layer 30A is provided, and the second surface underlying organic layer 40A is provided on the second surface 14. In this example, the underlying organic layers 30A and 40A are formed in a desired pattern by photolithography. The underlying organic layers 30A and 40A are provided so as to be separated from the peripheral edge of the through hole 20 in the in-plane direction of the substrate 12.

Next, as shown in FIG. 26, the first surface first conductive layer 31 is provided on the first surface underlying organic layer 30A, the second surface first conductive layer 41 is provided on the second surface underlying organic layer 40A, and the like. Through holes 20 are provided with through electrodes 22 that are electrically connected to the first conductive layer 31 on the first surface and the first conductive layer 41 on the second surface. The formation of the first surface first conductive layer 31, the second surface first conductive layer 41 and the through silicon via 22 may be performed by forming a seed layer and then forming a plating layer.

Further, a cross-sectional view of the perforated substrate according to still another embodiment is shown in FIG. 27. 28 to 30 are views showing a method of manufacturing the perforated substrate shown in FIG. 27. In the perforated substrate shown in FIG. 27, the first surface underlying organic layer 30A and the second surface underlying organic layer 40A do not enter the inside of the through hole 20, as in the example shown in FIG. 24. More specifically, the end portion of the first surface organic layer 30A and the second surface organic layer 40A on the peripheral edge side of the through hole 20 is located substantially directly above the peripheral edge of the through hole 20. Specifically, the difference in the position of the substrate 12 between the first surface organic layer 30A and the peripheral edge of the through hole 20 in the in-plane direction and the surface of the substrate 12 between the second surface organic layer 40A and the peripheral edge of the through hole 20. The difference in position in the inward direction is less than 5 μm. The difference in the positions is preferably 3 μm or less, more preferably 1 μm or less, and ideally 0.

When manufacturing the perforated substrate shown in FIG. 27, as shown in FIG. 28, first, the substrate 12 in which the through hole 20 is not formed is prepared, and the first surface 13 of the substrate 12 is used as an organic material. The first organic material film 51A is laminated, and the second organic material film 52A as an organic material is laminated on the second surface 14. Subsequently, as shown in FIG. 29, the first organic material film 51A, the second organic material film 52A, and the substrate 12 are irradiated with the laser La along the normal direction of the substrate 12. As a result, the first organic material film 51A, the second organic material film 52A, and the substrate 12 are penetrated, and as a result, as shown in FIG. 30, a through hole 20 is formed in the substrate 12 and the first surface 13 is formed. The first surface organic layer 30A that covers the second surface 14 is formed, and the second surface organic layer 40A that covers the second surface 14 is formed.

Also in this modification, the organic material for forming the underlying organic layers 30A and 40A does not require photosensitivity. Therefore, by using a non-photosensitive organic material as the organic material for forming the underlying organic layers 30A and 40A, the dielectric loss tangent can be suppressed to be small. As described above, such an organic material may have a dielectric loss tangent at 10 GHz, for example, less than 0.01, preferably less than 0.006, and more preferably less than 0.004.

The laser La to be irradiated in this example is selected according to the organic material for forming the underlying organic layers 30A and 40A. The laser La is an excimer laser, an Nd: YAG laser, a femtosecond laser, or the like. May be good.

The mounting board FIG. 31 includes a through electrode substrate 10 shown in FIG. 1 and an element 61 mounted on the through electrode substrate 10 and electrically connected to the through electrode 22 provided in the through hole 20. It is sectional drawing which shows an example of 60. The element 61 is an LSI chip such as a logic IC or a memory IC. Further, the element 61 may be a MEMS (Micro Electro Mechanical Systems) chip. A MEMS chip is an electronic device in which machine element parts, sensors, actuators, electronic circuits, and the like are integrated on one substrate. As shown in FIG. 31, the element 61 has a terminal 62 electrically connected to a conductive layer such as the first surface third conductive layer 35 of the through silicon via substrate 10.

Example of a Product on which a Through Silicon Via Substrate is Mounted FIG. 32 is a diagram showing an example of a product on which the through silicon via substrate 10 according to the embodiment of the present disclosure can be mounted. The through silicon via substrate 10 according to the embodiment of the present disclosure can be used in various products. For example, it is mounted on a notebook personal computer 110, a tablet terminal 120, a mobile phone 130, a smartphone 140, a digital video camera 150, a digital camera 160, a digital clock 170, a server 180, and the like.

10 ... Through silicon via substrate (perforated substrate)
12 ... Substrate 12S ... Side 13 ... First surface 13P ... Outer edge 14 ... Second surface 14P ... Outer edge 20 ... Through hole 20P 1 ... Periphery (first surface side)
20P2 ... Peripheral (second surface side)
21 ... Side wall (inner peripheral surface)
22 ... Through Silicon Via 30A ... First Surface Underground Organic Layer 30B ... Flat Part 30C ... Extension 31 ... First Surface First Conductive Layer 40A ... Second Surface Underground Organic Layer 40B ... Flat Part 40C ... Extension 41 ... Second Surface First conductive layer 60 ... Mounting substrate

Claims (5)

A substrate including a first surface and a second surface located on the opposite side of the first surface and provided with a through hole, and a substrate.
An underlying organic layer located on at least one of the first surface and the second surface and containing an organic material.
A wiring layer located on the underlying organic layer and having conductivity,
A through silicon via located in the through hole and electrically connected to the wiring layer.
The underlying organic layer is that away ranging periphery from 5μm or 10μm or less of the through hole in the plane direction of the substrate, perforated substrate. A mounting substrate comprising the perforated substrate according to claim 1 and an element electrically connected to a through electrode provided in a through hole of the perforated substrate. A step of preparing a substrate including a first surface and a second surface located on the opposite side of the first surface and having a through hole.
A step of providing a base organic layer containing an organic material on at least one of the first surface and the second surface, wherein the base organic layer is a peripheral edge of the through hole and the first surface. A step provided so as to cover at least one of the outer edge of the substrate and the outer edge of the second surface along the normal direction and the in-plane direction of the substrate.
A step of providing a wiring layer having conductivity on the base organic layer is provided .
In the step of providing the base organic layer, an organic material is provided on the first surface and the second surface of the substrate, and the through hole is filled with the organic material, and the through hole is filled. By penetrating the organic material from the first surface side to the second surface side by a laser irradiated along the normal direction of the substrate, the first surface and the second surface are covered and the through hole is formed. A method for manufacturing a perforated substrate , which comprises a step of forming the underlying organic layer covering the inner peripheral surface of the above. A step of preparing a substrate including a first surface and a second surface located on the opposite side of the first surface and having a through hole.
A step of providing a base organic layer containing an organic material on at least one of the first surface and the second surface, wherein the base organic layer has the through holes in the in-plane direction of the substrate. And the process provided so as to be away from the periphery of
A method for manufacturing a perforated substrate, comprising a step of providing a wiring layer having conductivity on the base organic layer and providing a through electrode electrically connected to the wiring layer in the through hole. A step of preparing a substrate including a first surface and a second surface located on the opposite side of the first surface, and
A step of providing an organic material on at least one of the first surface and the second surface, and
By penetrating the organic material and the substrate from the first surface side to the second surface side by a laser irradiated along the normal direction of the substrate, a through hole is formed in the substrate and the first surface is formed. A method for producing a perforated substrate, comprising a step of forming a base organic layer containing the organic material covering at least one of one surface and the second surface.

Images