JP7307898B2 - Penetration electrode substrate and manufacturing method thereof - Google Patents

Description

An embodiment of the present disclosure relates to a through electrode substrate and a manufacturing method thereof.

As disclosed in Patent Document 1, for example, the through electrode substrate includes a substrate including a first surface and a second surface, a plurality of holes provided in the substrate, and a plurality of holes extending from the first surface side to the second surface side of the substrate. and an electrode portion provided inside the hole so as to reach the hole. Such through electrode substrates have been conventionally used for various purposes, and are mounted in electronic devices such as mobile phones, for example. In the following description, the electrode portion is called a through electrode.

The through electrodes of such through electrode substrates are generally classified into a filling type in which the entire hole is filled and a so-called conformal type in which the through electrode is provided on the inner peripheral surface of the hole and has a hollow shape. The aforementioned Patent Document 1 discloses a filling type through electrode.

JP 2011-3925 A

When the filling type through electrode is entirely made of a conductive material, it is possible to provide a through electrode substrate with excellent airtightness. However, more materials are required and the manufacturing time is longer.

The embodiments of the present disclosure have been made in view of the above circumstances, and an object thereof is to provide a through electrode substrate capable of ensuring high airtightness at low cost and a method of manufacturing the same.

An embodiment of the present disclosure includes a substrate including a first surface and a second surface located opposite to the first surface and provided with a through hole, and a through electrode located in the through hole, Side walls of the through-hole are tapered from the first surface toward the inside of the substrate, and tapered from the second surface toward the inside of the substrate. and a boundary portion where the tip of the first sidewall and the tip of the second sidewall are coupled to each other, and the through-electrode is at least the sidewall of the sidewall. a through electrode substrate filling the boundary;

In the through electrode substrate according to an embodiment of the present disclosure, the boundary is formed on at least one of an end surface of the through electrode on the first surface side and an end surface of the through electrode on the second surface side. A recess that is recessed toward the part side may be provided.

Further, the through electrode substrate according to an embodiment of the present disclosure may further include an organic material layer that is provided in the recess and contains an organic material.

Further, in the through electrode substrate according to one embodiment of the present disclosure, the maximum dimension of the boundary portion in the in-plane direction of the substrate may be 30 μm or more and 50 μm or less.

Further, in the through electrode substrate according to one embodiment of the present disclosure, the substrate may be made of a glass substrate.

Further, one embodiment of the present disclosure is a substrate including a first surface and a second surface located opposite to the first surface and provided with a through hole, wherein a side wall of the through hole a tapered first side wall portion that tapers from the surface toward the inside of the substrate; a tapered second side wall portion that tapers from the second surface toward the inside of the substrate; a step of preparing a substrate having a boundary portion where a tip portion of a side wall portion and a tip portion of the second side wall portion are coupled to each other; growing a plating layer from the boundary portion side of the through hole; A method for manufacturing a through electrode substrate, comprising: growing the plating layer until the plating layer fills at least the boundary portion; and forming a through electrode in the through hole using the plating layer. be.

In a method for manufacturing a through electrode substrate according to an embodiment of the present disclosure, at least one of an end surface of the plating layer on the first surface side and an end surface of the plating layer on the second surface side, The plating layer may be grown so as to provide a concave portion recessed toward the boundary portion side.

Further, the method for manufacturing a through electrode substrate according to an embodiment of the present disclosure may further include providing an organic material layer containing an organic material in the concave portion.

Further, in the method for manufacturing a through electrode substrate according to an embodiment of the present disclosure, a maximum dimension of the boundary portion in an in-plane direction of the substrate may be 30 μm or more and 50 μm or less.

Moreover, in the method for manufacturing a through electrode substrate according to an embodiment of the present disclosure, the substrate may be made of a glass substrate.

According to the embodiments of the present disclosure, it is possible to provide a through electrode substrate that can ensure high airtightness at low cost.

1 is a cross-sectional view showing a through electrode substrate according to one embodiment; FIG. 2 is an enlarged cross-sectional view of a through-hole and a through-electrode of the through-electrode substrate shown in FIG. 1; FIG. It is a figure which shows the manufacturing process of the penetration electrode substrate shown in FIG. It is a figure which shows the manufacturing process of the penetration electrode substrate shown in FIG. It is a figure which shows the manufacturing process of the penetration electrode substrate shown in FIG. It is a figure which shows the manufacturing process of the penetration electrode substrate shown in FIG. It is a figure which shows the manufacturing process of the penetration electrode substrate shown in FIG. It is a figure which shows the manufacturing process of the penetration electrode substrate shown in FIG. FIG. 10 is a cross-sectional view showing a through electrode substrate according to another embodiment; 10A to 10C are diagrams showing a manufacturing process of the through electrode substrate shown in FIG. 9; 10A to 10C are diagrams showing a manufacturing process of the through electrode substrate shown in FIG. 9; 10A to 10C are diagrams showing a manufacturing process of the through electrode substrate shown in FIG. 9; 10A to 10C are diagrams showing a manufacturing process of the through electrode substrate shown in FIG. 9; 10A to 10C are diagrams showing a manufacturing process of the through electrode substrate shown in FIG. 9; FIG. 10 is a cross-sectional view showing a through electrode substrate according to still another embodiment; 16A and 16B are diagrams showing a manufacturing process of the through electrode substrate shown in FIG. 15; 16A and 16B are diagrams showing a manufacturing process of the through electrode substrate shown in FIG. 15; 16A and 16B are diagrams showing a manufacturing process of the through electrode substrate shown in FIG. 15; 16A and 16B are diagrams showing a manufacturing process of the through electrode substrate shown in FIG. 15; FIG. 10 is a cross-sectional view showing a through electrode substrate according to still another embodiment; FIG. 4 is a diagram showing an example of a product on which a through electrode substrate is mounted;

Hereinafter, a through electrode substrate and a manufacturing method thereof according to embodiments of the present disclosure will be described in detail with reference to the drawings. The embodiments shown below are examples of the embodiments of the present disclosure, and the present disclosure should not be construed as being limited to these embodiments. Also, in this specification, terms such as "substrate", "base material", "sheet" and "film" are not to be distinguished from each other based only on the difference in designation. For example, "substrate" and "base material" are concepts that include members that can be called sheets and films. Furthermore, terms used herein to specify shapes and geometric conditions and their degrees, such as terms such as "parallel" and "perpendicular", length and angle values, etc., are bound by strict meanings. However, it is interpreted to include the extent to which similar functions can be expected. In addition, in the drawings referred to in this embodiment, the same reference numerals or similar reference numerals may be assigned to the same portions or portions having similar functions, and repeated description thereof may be omitted. Also, the dimensional ratios in the drawings may differ from the actual ratios for convenience of explanation, and some of the configurations may be omitted from the drawings.

Through Silicon Via Substrate Hereinafter, embodiments of the present disclosure will be described. First, the configuration of the through electrode substrate 10 according to this embodiment will be described. FIG. 1 is a cross-sectional view showing a through electrode substrate 10, and FIG. 2 is an enlarged view of a main part of FIG.

The through electrode substrate 10 includes a substrate 12 , a through electrode 22 , a first wiring layer 30 , a second wiring layer 40 , a first organic material layer 50 and a second organic material layer 60 . Each component of the through electrode substrate 10 will be described below.

(substrate)
Substrate 12 includes a first side 13 and a second side 14 opposite first side 13 . Further, the substrate 12 is provided with a plurality of through holes 20 extending from the first surface 13 to the second surface 14 .

Substrate 12 includes an inorganic material having a certain insulating property. For example, the substrate 12 may be a glass substrate, a quartz substrate, a sapphire substrate, a resin substrate, a silicon substrate, a silicon carbide substrate, an alumina (Al ₂ O ₃ ) substrate, an aluminum nitride (AlN) substrate, a zirconia oxide (ZrO ₂ ) substrate, etc. Alternatively, these substrates are laminated. The substrate 12 may partially include a substrate made of a conductive material such as an aluminum substrate or a stainless steel substrate.

Examples of the glass used for the substrate 12 include alkali-free glass.
Alkali-free glass is glass that does not contain alkaline components such as sodium and potassium. Alkali-free glass includes, for example, boric acid instead of an alkaline component. Alkali-free glass also contains, for example, alkaline earth metal oxides such as calcium oxide and barium oxide. Examples of alkali-free glass include EN-A1 manufactured by Asahi Glass and Eagle XG manufactured by Corning. By including glass in the substrate 12, the insulating properties of the substrate 12 can be enhanced.

Further, when the substrate 12 contains glass, the thickness of the substrate 12 is, for example, 250 μm or more and 450 μm or less.

As shown enlarged in FIG. 2, the side wall 21 of the through-hole 20 formed in the substrate 12 includes a tapered first side wall portion 21A that tapers from the first surface 13 toward the inner side of the substrate 12, A tapered second side wall portion 21B that tapers from the second surface 14 toward the inner side of the substrate 12, and a boundary where the tip portion of the first side wall portion 21A and the tip portion of the second side wall portion 21B are joined to each other and a portion 21C.

The first side wall portion 21A in this example has a circular shape in plan view, and is tapered from the first surface 13 toward the second surface 14 . The second side wall portion 21</b>B has a circular shape in plan view, and is tapered from the second surface 14 toward the first surface 13 . The first side wall portion 21A and the second side wall portion 21B are coupled to each other at a boundary portion 21C located in the center of the substrate 12 in the thickness direction.

The above-described tapered shape means “tapered” when viewed from a broader perspective. The side wall portion 21A and the second side wall portion 21B are not limited to extending linearly. Even if they include curved portions or have straight and curved portions, these shapes are included in the tapered concept if they are "tapered" in the broader sense.

Further, as shown in FIG. 2, the angle α between each of the first side wall portion 21A and the second side wall portion 21B of the through hole 20 and the normal direction nd of the substrate 12 is 1.0 degree or more. . This angle α is preferably set within a range of 1.0 degrees or more and 3.0 degrees or less.

Also, the length of the through hole 20 , that is, the dimension of the through hole 20 in the normal direction of the first surface 13 is equal to the thickness of the substrate 12 . In addition, the dimension S1 (see FIG. 3) in the in-plane direction of the first surface 13 of the end portion of the through hole 20 on the first surface 13 side is, for example, 40 μm or more and 150 μm or less. The in-plane dimension S2 (see FIG. 3) of the second surface 14 of the end portion is, for example, 40 μm or more and 150 μm or less. A dimension S3, which is the maximum dimension in the in-plane direction of the first surface 13 to the second surface 14 of the boundary portion 21C, is 30 μm or more and 50 μm or less, preferably 35 μm or more and 45 μm or less.

In this example, since the boundary portion 21C has a circular cross section, the dimension S3, which is the maximum in-plane dimension of the boundary portion 21C, is the diameter of the boundary portion 21C. Also, the ratio of the length to the width of the through hole 20, that is, the aspect ratio of the through hole 20 may be, for example, 4 or more and 10 or less.

(through electrode)
The through electrode 22 is a member positioned inside the through hole 20 and having conductivity. The through electrode 22 is electrically connected to each of the first wiring layer 30 and the second wiring layer 40. In FIG. and the boundary between the through electrode 22 and the second wiring layer 40 are shown.

As shown in FIG. 2 , the through electrode 22 includes a seed layer 221 and a plating layer 222 that are arranged in order from the sidewall 21 side of the through hole 20 to the center side of the through hole 20 .

The seed layer 221 is a conductive layer that serves as a base for depositing metal ions in the plating solution and growing the plating layer 222 during the electroplating process for forming the plating layer 222 by electroplating. be. As a material for the seed layer 221, a conductive material such as copper, titanium, or a combination thereof can be used. The material of the seed layer 221 may be the same as or different from the material of the plating layer 222 . The seed layer 221 has a thickness of 50 nm or more. This seed layer 221 is formed by sputtering, vapor deposition, or a combination of sputtering and vapor deposition.

The plating layer 222 is a conductive layer formed by plating. As a material for forming the plated layer 222, metals such as copper, gold, silver, platinum, rhodium, tin, aluminum, nickel, and chromium, alloys using these metals, or laminates thereof can be used. .

As is clear from FIGS. 1 and 2, the through electrode 22 in this embodiment fills at least the boundary portion 21C of the sidewall 21 . Specifically, the through electrode 22 in the present embodiment extends from a midway position of the first side wall portion 21A between the first surface 13 and the boundary portion 21C to a second side wall portion between the second surface 14 and the boundary portion 21C. The range up to the halfway point of 21B is filled. On the other hand, the penetrating electrode 22 extends from the middle position of the first side wall portion 21A to the first surface 13 and the portion from the middle position of the second side wall portion 21B to the second surface 14 at the center of the through hole 20. It is covered with a space formed on the side. That is, the through electrode 22 is formed in a conformal via state in the portion closer to the first surface 13 and the portion closer to the second surface 14 . Thus, in the present embodiment, recesses 22A and 22B recessed toward the boundary portion 21C are provided on the end surface of the through electrode 22 on the first surface 13 side and the end surface on the second surface 14 side, respectively.

(First wiring layer)
The first wiring layer 30 is a conductive layer located on the first surface 13 , and in the illustrated example, the first wiring layer 30 and the through electrodes 22 are electrically connected. The first wiring layer 30 includes a seed layer 221 and a plating layer 222 that are laminated in order on the first surface 13 of the substrate 12, like the through electrodes 22. As shown in FIG. The material forming the first wiring layer 30 is the same as the material forming the through electrode 22 . The seed layer 221 of the first wiring layer 30 is formed at the same time as the seed layer 221 of the through electrode 22 by sputtering, vapor deposition, or a combination of sputtering and vapor deposition. The plated layer 222 of the first wiring layer 30 is formed simultaneously with the plated layer 222 of the through electrode 22 . The thickness of the first wiring layer 30 is, for example, 1 μm or more and 20 μm or less.

(Second wiring layer)
The second wiring layer 40 is a conductive layer located on the second surface 14 , and in the illustrated example, the second wiring layer 40 and the through electrodes 22 are electrically connected. The second wiring layer 40 includes a seed layer 221 and a plating layer 222 that are laminated in order on the second surface 14 of the substrate 12 , like the through electrodes 22 and the first wiring layer 30 . The material forming the second wiring layer 40 is the same as the material forming the through electrode 22 . The seed layer 221 of the second wiring layer 40 is formed at the same time as the seed layer 221 of the through electrode 22 by sputtering, vapor deposition, or a combination of sputtering and vapor deposition. The plated layer 222 of the second wiring layer 40 is formed simultaneously with the plated layer 222 of the through electrode 22 . The thickness of the second wiring layer 40 is also, for example, 1 μm or more and 20 μm or less.

(First organic material layer)
The first organic material layer 50 is a layer containing an organic material provided in the recess 22A of the through electrode 22 on the first surface 13 side, and has insulating properties. In this example, the recess 22A is filled with the first organic material layer 50 . Polyimide, epoxy, or the like can be used as the organic material of the first organic material layer 50 . In the illustrated example, regarding the position in the normal direction of the first surface 13, the position of the end surface of the first organic material layer 50 on the first surface 13 side and the position of the first surface 13 are the same. Equivalent here means that the difference in the position of the surfaces is 10 μm or less. Regarding the position in the normal direction of the first surface 13 , the position of the end surface of the first organic material layer 50 on the first surface 13 side and the position of the surface of the first wiring layer 30 may be the same. The end surface of the first organic material layer 50 on the side of the first surface 13 may be located closer to the boundary portion 21C than the first surface 13, or the first surface 13 and the surface of the first wiring layer 30 may be located closer to each other. may be located in between.

(Second organic material layer)
The second organic material layer 60 is a layer containing an organic material provided in the recessed portion 22B on the second surface 14 side of the through electrode 22, and has insulating properties like the first organic material layer 50. As shown in FIG. The second organic material layer 60 also fills the recess 22A. Polyimide, epoxy, or the like can be used as the organic material of the second organic material layer 60 . In the illustrated example, regarding the position in the normal direction of the second surface 14 , the position of the end surface of the second organic material layer 60 on the second surface 14 side and the position of the second surface 14 are the same. Equivalent here means that the difference in the position of the surfaces is 10 μm or less as described above. Regarding the position in the normal direction of the second surface 14 , the position of the end surface of the second organic material layer 60 on the second surface 14 side and the position of the surface of the second wiring layer 40 may be the same. The end surface of the second organic material layer 60 on the side of the second surface 14 may be positioned closer to the boundary portion 21C than the second surface 14, or the second surface 14 and the surface of the second wiring layer 40 may be located closer to the boundary portion 21C. may be located in between.

Method for Manufacturing Through Electrode Substrate An example of a method for manufacturing the above-described through electrode substrate 10 will be described below with reference to FIGS. 3 to 8. FIG.

(Through hole forming step)
First, the substrate 12 is prepared. Next, a resist layer is provided on at least one of the first surface 13 and the second surface 14 . After that, openings are provided in the resist layer at positions corresponding to the through holes 20 . Next, by processing the substrate 12 in the openings of the resist layer, through holes 20 can be formed in the substrate 12 as shown in FIG. As a method for processing the substrate 12, a dry etching method such as a reactive ion etching method or a deep reactive ion etching method, a wet etching method, or the like can be used.

The through holes 20 may be formed in the substrate 12 by irradiating the substrate 12 with a laser. In this case, the resist layer may not be provided. As a laser for laser processing, an excimer laser, Nd:YAG laser, femtosecond laser, or the like can be used. When an Nd:YAG laser is employed, a fundamental wave with a wavelength of 1064 nm, a second harmonic with a wavelength of 532 nm, a third harmonic with a wavelength of 355 nm, or the like can be used.

Alternatively, laser irradiation and wet etching can be combined as appropriate. Specifically, first, an altered layer is formed in a region of the substrate 12 where the through hole 20 is to be formed by laser irradiation. Subsequently, the substrate 12 is immersed in hydrogen fluoride or the like to etch the altered layer. Through holes 20 can thus be formed in the substrate 12 . Alternatively, the through holes 20 may be formed in the substrate 12 by blasting the substrate 12 with an abrasive.

For example, by processing the substrate 12 from both sides of the first surface 13 and the second surface 14, an hourglass-shaped through hole 20 having a tapered first side wall portion 21A and a tapered second side wall portion 21B as shown in FIG. can be formed. Thus, the substrate 12 provided with the through hole 20 having the tapered first side wall portion 21A, the tapered second side wall portion 21B, and the boundary portion 21C therebetween is prepared. Here, the maximum dimension of the boundary portion 21C in the in-plane direction of the substrate 12 is determined in the range of 30 μm to 50 μm, preferably in the range of 35 μm to 45 μm, as described above.
(Through electrode forming step)
Next, the through electrodes 22 are formed on the sidewalls 21 of the through holes 20 . In the present embodiment, the first wiring layer 30 is formed on a portion of the first surface 13 and the second wiring layer 40 is formed on a portion of the second surface 14 at the same time as the through electrodes 22 are formed.

A seed layer 221 is formed on the first surface 13, the second surface 14, and the sidewalls 21 of the through holes 20 by sputtering, vapor deposition, or a combination thereof, as shown in FIG.
Subsequently, as shown in FIG. 5, a resist layer 37 is partially formed on the seed layer 221 . Subsequently, as shown in FIG. 6, a plating layer 222 is formed on the seed layer 221 not covered with the resist layer 37 by electroplating. After that, as shown in FIG. 7, the resist layer 37 is removed. Also, the portion of the seed layer 221 covered with the resist layer 37 is removed by wet etching, for example. Thus, the through electrode 22, the first wiring layer 30 and the second wiring layer 40 can be formed.

To describe the step of forming the plating layer 222 in detail, in the present embodiment, the plating layer 222 is grown from the boundary portion 21C side of the through-hole 20 until the plating layer 222 fills at least the boundary portion 21C. Let More specifically, the growth of the plating layer 222 is stopped after the plating layer 222 fills the boundary portion 21</b>C and before filling the entire through-hole 20 . More specifically, the plating layer 222 on the first surface 13 and the second surface 14 has a thickness sufficient for forming the wiring layers 30 and 40 before the plating layer 222 completely fills the through hole 20 . The growth of the plated layer 222 is stopped when the As a result, recesses 22A and 22B recessed toward the boundary portion 21C are formed on both the end surface of the plating layer 222 that constitutes the through electrode 22 on the first surface 13 side and the end surface of the plating layer 222 on the second surface 14 side. The plating layer 222 can be grown such that a is provided.

The inventors of the present invention found that when the plating layer 222 is formed after forming the seed layer 221 on the side wall 21 of the through hole 20 formed in the hourglass shape in the substrate 12, the plating layer 222 grows from the boundary portion 21C side. It has been found that the boundary portion 21C can be filled or filled at an early stage by using this method, and the material cost and manufacturing time can be greatly reduced compared to the case where the through-hole is cylindrical. Based on this finding, the inventor of the present invention devised the manufacturing procedure described above.

Further, when the plating layer 222 is grown as described above, concave portions 22A and 22B are formed in the end surface of the plating layer 222 on the first surface 13 side and the end surface of the plating layer 222 on the second surface 14 side. Such recesses 22A and 22B tend to gradually disappear as the plating layer 222 grows for a longer period of time. Here, in order to reduce the material cost by growing the plating layer 222 so as to intentionally leave such recesses 22A and 22B, the inventors of the present invention form the recesses 22A and 22B on the through electrodes 22 in the present embodiment. It remains actively formed.

(Step of forming organic material layer)
Next, as shown in FIG. 8, the first organic material layer 50 is formed in the concave portion 22A of the through electrode 22 on the first surface 13 side. For example, first, a film having a photosensitive layer containing an organic material and a substrate is attached to the first surface 13 side of the substrate 12 . Subsequently, the film is exposed and developed. This makes it possible to form the first organic material layer 50 made of the photosensitive layer of the film and filled only in the concave portions 22A. Similarly, the second organic material layer 60 is also formed on the recess 22B of the through electrode 22 on the second surface 14 side. Also in this case, for example, first, a film having a photosensitive layer containing an organic material and a base material is attached to the second surface 14 side of the substrate 12 . Subsequently, the film is exposed and developed. This makes it possible to form the second organic material layer 60 made of the photosensitive layer of the film and filling only the concave portions 22B.

The first organic material layer 50 and the second organic material layer 60 are formed by applying a photosensitive layer containing an organic material to the first surface 13 and the second surface 14 by coating, and then developing unnecessary portions. may

In the through electrode substrate 10 according to the present embodiment described above, the material of the through electrode 22 provided so as to fill at least a part of the through hole 20 is changed into a through hole having the same maximum width dimension and having a cylindrical shape. This can be suppressed compared to the case of filling with the material. In addition, the through electrode 22 can be manufactured in a significantly reduced manufacturing time compared to the case where the through hole having a columnar shape is filled. Therefore, it becomes possible to ensure high airtightness at low cost. In the case where the through-hole 20 is highly airtight by the through-electrode 22 as in the present embodiment, for example, under usage conditions in which the first surface 13 side or the second surface 14 side is in a vacuum environment, the vacuum environment side Intrusion of air and moisture through the through holes 20 can be avoided. Therefore, the through electrode substrate 10 can specifically improve the reliability of the device in which it is incorporated at low cost.

Further, in the present embodiment, concave portions 22A and 22B that are recessed toward the boundary portion 21C are provided in the end surface of the through electrode 22 on the first surface 13 side and the end surface on the second surface 14 side. Thereby, material cost can be suppressed.

The recess 22A is filled with the first organic material layer 50, and the recess 22B is filled with the second organic material layer 60. As shown in FIG. Thereby, the organic material layers 50 and 60 can relieve the stress generated in the substrate 12, and the durability of the through electrode substrate 10 can be improved. More specifically, for example, when an element is connected to the first wiring layer 30 via bumps, pressure may be applied to the first wiring layer 30 to generate stress. Absorbs pressure applied to layer 30 . Also, the first wiring layer 30 and the second wiring layer 40 can be deformed by heat, and the organic material layers 50 and 60 can absorb such deformation of the first wiring layer 30 and the second wiring layer 40 . Thereby, stress generated in the substrate 12 by the organic material layers 50 and 60 can be relaxed.

(Other embodiment 1)
Next, a through electrode substrate 10' according to another embodiment will be described with reference to FIGS. 9 to 14. FIG. The same reference numerals are given to the same components as in the above-described embodiment, and the following description will be given.

FIG. 9 shows a through electrode substrate 10' according to this embodiment. 1 and the like in that the first side wall portion 21A and the second side wall portion 21B are connected to each other at the boundary portion 21C located closer to the second surface 14 than the center of the substrate 12 in the thickness direction. Differs from the shown embodiment. 1 and the like in that a concave portion 22A recessed toward the boundary portion 21C is provided only on the end face of the through electrode 22 on the first surface 13 side.

When manufacturing the through electrode substrate 10 ′, the substrate 12 is first prepared as shown in FIG. In the present embodiment, the first wiring layer 30 is formed on a portion of the first surface 13 and the second wiring layer 40 is formed on a portion of the second surface 14 at the same time as the through electrodes 22 are formed.

A seed layer 221 is formed on the first surface 13, the second surface 14, and the sidewalls 21 of the through holes 20 by sputtering, vapor deposition, or a combination thereof, as shown in FIG. Subsequently, as shown in FIG. 12, a resist layer 37 is partially formed on the seed layer 221, and then a plated layer 222 is formed on the seed layer 221 not covered by the resist layer 37 by electroplating. . After that, as shown in FIG. 13, the resist layer 37 is removed. Also, the portion of the seed layer 221 covered with the resist layer 37 is removed by wet etching, for example. Thus, the through electrode 22, the first wiring layer 30 and the second wiring layer 40 can be formed.

Also in the present embodiment, when forming the plating layer 222 as described above, the plating layer 222 is grown from the boundary portion 21C side of the through-hole 20 until the plating layer 222 fills at least the boundary portion 21C. to grow. More specifically, as shown in FIG. 12, after the plating layer 222 fills the boundary portion 21C and the portion from the boundary portion 21C of the through-hole 20 to the second surface 14, the plating layer 222 forms the boundary of the through-hole 20. The growth of the plating layer 222 is stopped before the portion from the portion 21C to the first surface 13 is filled. More specifically, before the plating layer 222 fills the portion from the boundary portion 21C to the first surface 13, the plating layer 222 on the first surface 13 and the second surface 14 is used to form the wiring layers 30 and 40. The growth of the plating layer 222 is stopped when it reaches a sufficient thickness. As a result, the plating layer 222 can be grown so that the end surface of the plating layer 222 forming the through electrode 22 on the first surface 13 side is provided with the concave portion 22A that is recessed toward the boundary portion 21C side.

When the boundary portion 21C where the first side wall portion 21A and the second side wall portion 21B are coupled to each other is located closer to the second surface 14 than the center of the substrate 12 in the thickness direction, the plating layer 222 is formed closer to the first side wall portion 21A than the first side wall portion 21A. When the plated layer 222 grows early on the second side wall portion 21B and fills the entire second side wall portion 21B, the recess 22A is formed on the end surface of the plated layer 222 on the side of the first side wall portion 21A. The inventors have found that there is a tendency for Based on this finding, the inventor of the present invention devised the manufacturing procedure described above. In addition, the concave portions 22A as described above tend to disappear gradually by securing a long growth time for the plating layer 222. In order to reduce the material cost by growing the layer 222, the recess 22A is left intentionally formed on the through electrode 22 in this embodiment.

Next, as shown in FIG. 14, the first organic material layer 50 is formed in the concave portion 22A of the through electrode 22 on the first surface 13 side. The first organic material layer 50 is formed by a method similar to that of the embodiment shown in FIG. 1 and the like.

The through electrode substrate 10 ′ according to the present embodiment described above can also obtain the same effects as those obtained in the embodiments such as FIG. 1 .

(Other embodiment 2)
Next, a through electrode substrate 10'' according to another embodiment will be described with reference to FIGS. 15 to 19. FIG. The same reference numerals are given to the same components as in the above-described embodiment, and the following description will be given.

FIG. 15 shows a through electrode substrate 10'' according to this embodiment. In this embodiment, the first side wall portion 21A and the second side wall portion 21B are coupled to each other at the boundary portion 21C located in the center of the substrate 12 in the thickness direction. It is different from the embodiment shown in FIG.

Moreover, the portion of the side wall 21 of the through electrode 22 from the boundary portion 21C to the intermediate position of the first side wall portion 21A between the boundary portion 21C and the first surface 13 is the plated layer 222 only. It is also different from the embodiment shown in FIG. 1 and the like in that it is partially filled. More specifically, the portion of the through electrode 22 provided within the first side wall portion 21A includes a first portion 22X made of a plating layer 222 that fills from the boundary portion 21C to the intermediate position of the first side wall portion 21A; A second portion 22Y composed of a seed layer 221 and a plating layer 222 covering from the middle position of the first side wall portion 21A to the first surface 13 is formed.

When manufacturing the through electrode substrate 10 ″ according to this embodiment, first, as shown in FIG. In the present embodiment, the first wiring layer 30 is formed on a portion of the first surface 13 and the second wiring layer 40 is formed on a portion of the second surface 14 at the same time as the through electrodes 22 are formed.

In this embodiment, as shown in FIG. 16, the seed layer 221 is formed only on the second surface 14 and the second side wall portions 21B of the through holes 20 by sputtering, vapor deposition, or a combination thereof. Subsequently, as shown in FIG. 17, a plated layer 222 is formed on the seed layer 221 by electroplating. Here, when forming the plating layer 222, the plating layer 222 is grown from the boundary portion 21C side of the through hole 20 until the plating layer 222 fills at least the boundary portion 21C. More specifically, the growth of the plating layer 222 is stopped after the plating layer 222 fills the boundary portion 21C and the portion of the through-hole 20 from the boundary portion 21C to the second surface 14 . More specifically, when the plating layer 222 fills the area from the boundary portion 21C to the second surface 14 and the plating layer 222 on the second surface 14 has a sufficient thickness for forming the wiring layer 40. Then, the growth of the plating layer 222 is stopped. At this time, in the present embodiment, since the seed layer 221 is not formed on the first side wall portion 21A of the through hole 20, the growth of the plating layer 222 on the side of the first side wall portion 21A does not proceed early, and the plating layer When the plating layer 222 fills the portion from the boundary portion 21C to the second surface 14, the plating layer 222 on the side of the first side wall portion 21A is formed on the first side wall portion 21A between the boundary portion 21C and the first surface 13. It grows only to the extent that it fills up to the halfway position. As a result, the first portion 22X composed of the plated layer 222 filling the area from the boundary portion 21C to the intermediate position of the first side wall portion 21A is formed to constitute a part of the through electrode 22. As shown in FIG.

Next, as shown in FIG. 18, in the present embodiment, a seed layer 221 is formed on the portion of the first side wall portion 21A that is not covered with the first portion 22X and on the first surface 13 . Seed layer 221 is formed by a sputtering method, a vapor deposition method, or a combination thereof. Next, as shown in FIG. 19, a plating layer 222 is formed on the seed layer 221 on the first side wall portion 21A and the first surface 13 by electroplating. Formation of the plating layer 222 stops before the plating layer 222 fills the first side wall portion 21A. Thereby, the through electrode 22, the first wiring layer 30 and the second wiring layer 40 are formed. A concave portion 22A is formed by the first portion 22X and the second portion 22Y.

After that, the first organic material layer 50 is formed in the concave portion 22A of the through electrode 22 on the first surface 13 side. The first organic material layer 50 is formed by a method similar to that of the embodiment shown in FIG. 1 and the like. As described above, the through electrode substrate 10 ″ according to the present embodiment is manufactured.

The through electrode substrate 10 ″ according to the present embodiment described above can also obtain the same effect as that obtained in the embodiment shown in FIG. 1 and the like.

(Other embodiment 3)
Next, a through electrode substrate 10''' according to another embodiment will be described with reference to FIG. The same reference numerals are given to the same components as in the above-described embodiment, and the following description will be given.

In a through electrode substrate 10''' according to the embodiment shown in FIG. 20, concave portions 22A and 22B recessed toward the boundary portion 21C side are formed in the end surface of the through electrode 22 on the first surface 13 side and the end surface on the second surface 14 side. It differs from the embodiment shown in FIG. 1 etc. in that it is not provided. The through electrode substrate 10 ′″ can be manufactured by securing a long formation time of the plating layer 222 in the manufacturing method of the through electrode substrate 10 according to the embodiment shown in FIG. 1 and the like. This through electrode substrate 10''' can also provide the same effects as those obtained in the embodiment of FIG. 1 and the like.

Examples of products on which through electrode substrates are mounted FIG. 21 is a diagram showing an example of products on which the through electrode substrates 10 and the like according to the embodiment of the present disclosure can be mounted. The through electrode substrate 10 and the like according to the embodiment of the present disclosure can be used in various products. For example, it is installed in a notebook personal computer 110, a tablet terminal 120, a mobile phone 130, a smart phone 140, a digital video camera 150, a digital camera 160, a digital clock 170, a server 180, and the like.

10, 10′, 10″, 10′″ through electrode substrate 12 substrate 13 first surface 14 second surface 20 through hole 21 side wall 21A first side wall portion 21B second side wall portion 21C Boundary portion 22 Through electrodes 22A, 22B Concave portion 22X First portion 22Y Second portion 221 Seed layer 222 Plating layer 30 First wiring layer 37 Resist layer 40 Second wiring layer 50 First Organic material layer 60 Second organic material layer nd Normal direction

Claims (5)

a substrate having a thickness of 250 μm or more, which includes a first surface and a second surface located on the opposite side of the first surface and provided with through holes;
a through electrode positioned in the through hole;
a wiring layer located on at least one of the first surface and the second surface and electrically connected to the through electrode;
Side walls of the through-hole are tapered from the first surface toward the inside of the substrate, and tapered from the second surface toward the inside of the substrate. and a boundary portion where the tip portion of the first sidewall portion and the tip portion of the second sidewall portion are coupled to each other,
the through electrode fills at least the boundary portion of the side wall;
At least one of the end faces of the through electrodes on the first surface side and the end faces of the through electrodes on the second surface side, on which the wiring layer is located, is directed toward the boundary portion. The through electrode is provided with a concave portion that is recessed from the middle position of the first side wall portion to the first surface and a portion from the middle position of the second side wall portion to the second surface. Formed by covering with a space formed on the center side of the through hole,
An organic material layer containing an organic material is provided in the recess,
The position of the end surface of the organic material layer in the recess provided in the end surface of the through electrode on the surface side of the substrate where the wiring layer is located is equivalent to the position of the surface of the substrate where the wiring layer is located. and the end surface of the organic material layer is located in a range from the boundary portion side of the substrate surface to between the substrate surface and the wiring layer surface , and the wiring layer includes the organic material layer. A through electrode substrate not located on a material layer . The through electrode substrate according to claim 1, wherein the substrate is made of a glass substrate. The through electrode substrate according to claim 1 or 2, wherein the wiring layer has a thickness of 1 µm or more and 20 µm or less. The through electrode substrate according to any one of claims 1 to 3, wherein the substrate has a thickness of 450 µm or less. A substrate having a thickness of 250 μm or more and including a first surface and a second surface located opposite to the first surface and provided with a through hole, wherein the side wall of the through hole extends from the first surface to the A tapered first side wall portion tapering toward the inner side of the substrate, a tapered second side wall portion tapering toward the inside side of the substrate from the second surface, and the first side wall portion. providing a substrate having a tip and a boundary where the tip of the second sidewall is joined together;
A plating layer is grown from the boundary portion side of the through-hole until the plating layer fills at least the boundary portion, and the end surface of the plating layer on the first surface side and the first surface of the plating layer are grown. a step of growing the plating layer so that at least one of the end faces on the two sides is provided with a concave portion recessed toward the boundary portion;
A through electrode is formed in the through hole using the plating layer, is positioned on at least one of the first surface and the second surface, and is electrically connected to the through electrode. forming a wiring layer;
providing an organic material layer containing an organic material in the recess,
The recess is provided on at least one of the end faces of the through electrode on the first surface side and the end face of the through electrode on the second surface side, the end surface on the surface side of the substrate where the wiring layer is located, The plated layer forming the through electrode extends from the middle position of the first side wall portion to the first surface and the portion from the middle position of the second side wall portion to the second surface at the center of the through hole. Formed by covering with a space formed on the side,
The position of the end surface of the organic material layer in the recess provided in the end surface of the through-electrode on the surface side of the substrate where the wiring layer is located is equivalent to the position of the surface of the substrate where the wiring layer is located. The organic material layer is formed in the concave portion such that the end face of the organic material layer is located in a range from the boundary portion side of the substrate surface to between the substrate surface and the wiring layer surface. A method for manufacturing a through electrode substrate, wherein the through electrode substrate is provided inside the organic material layer, and the wiring layer is not positioned on the organic material layer .

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