JP6981781B2 - 複数のプラズマ処理ステーションにわたってインピーダンスまたは電力を調整するための結合器／分配器 - Google Patents

複数のプラズマ処理ステーションにわたってインピーダンスまたは電力を調整するための結合器／分配器 Download PDF

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JP6981781B2
JP6981781B2 JP2017113989A JP2017113989A JP6981781B2 JP 6981781 B2 JP6981781 B2 JP 6981781B2 JP 2017113989 A JP2017113989 A JP 2017113989A JP 2017113989 A JP2017113989 A JP 2017113989A JP 6981781 B2 JP6981781 B2 JP 6981781B2
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frequency
plasma processing
output
signal
distributor
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JP2017224601A (ja
JP2017224601A5 (Direct
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スニル・カプーア
ジョージ・トーマス
ヤスワンス・ランジネニ
エドワード・アウグスティニャック
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H03H7/40—Automatic matching of load impedance to source impedance

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
JP2017113989A 2016-06-17 2017-06-09 複数のプラズマ処理ステーションにわたってインピーダンスまたは電力を調整するための結合器／分配器 Active JP6981781B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201662351879P 2016-06-17 2016-06-17
US62/351,879 2016-06-17
US15/254,769 US10187032B2 (en) 2016-06-17 2016-09-01 Combiner and distributor for adjusting impedances or power across multiple plasma processing stations
US15/254,769 2016-09-01

Publications (3)

Publication Number Publication Date
JP2017224601A JP2017224601A (ja) 2017-12-21
JP2017224601A5 JP2017224601A5 (Direct) 2020-09-03
JP6981781B2 true JP6981781B2 (ja) 2021-12-17

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JP2017113989A Active JP6981781B2 (ja) 2016-06-17 2017-06-09 複数のプラズマ処理ステーションにわたってインピーダンスまたは電力を調整するための結合器／分配器

Country Status (5)

Country Link
US (5) US10187032B2 (Direct)
JP (1) JP6981781B2 (Direct)
KR (6) KR102123722B1 (Direct)
CN (2) CN107523810B (Direct)
TW (4) TW202504394A (Direct)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10187032B2 (en) * 2016-06-17 2019-01-22 Lam Research Corporation Combiner and distributor for adjusting impedances or power across multiple plasma processing stations
US10283330B2 (en) * 2016-07-25 2019-05-07 Lam Research Corporation Systems and methods for achieving a pre-determined factor associated with an edge region within a plasma chamber by synchronizing main and edge RF generators
US10553465B2 (en) * 2016-07-25 2020-02-04 Lam Research Corporation Control of water bow in multiple stations
US10410836B2 (en) * 2017-02-22 2019-09-10 Lam Research Corporation Systems and methods for tuning to reduce reflected power in multiple states
DE102018204585A1 (de) * 2017-03-31 2018-10-04 centrotherm international AG Plasmagenerator, Plasma-Behandlungsvorrichtung und Verfahren zum gepulsten Bereitstellen von elektrischer Leistung
US11289355B2 (en) 2017-06-02 2022-03-29 Lam Research Corporation Electrostatic chuck for use in semiconductor processing
US11615943B2 (en) * 2017-07-07 2023-03-28 Advanced Energy Industries, Inc. Inter-period control for passive power distribution of multiple electrode inductive plasma source
US11651939B2 (en) * 2017-07-07 2023-05-16 Advanced Energy Industries, Inc. Inter-period control system for plasma power delivery system and method of operating same
KR102504624B1 (ko) * 2017-07-07 2023-02-27 어드밴스드 에너지 인더스트리즈 인코포레이티드 플라즈마 전력 전달 시스템을 위한 주기 간 제어 시스템 및 그 동작 방법
US11469084B2 (en) 2017-09-05 2022-10-11 Lam Research Corporation High temperature RF connection with integral thermal choke
US11881381B2 (en) 2018-02-23 2024-01-23 Lam Research Corporation Capacitance measurement without disconnecting from high power circuit
KR102800309B1 (ko) 2018-02-23 2025-04-23 램 리써치 코포레이션 반도체 프로세싱 툴에서 rf 전류 측정
US11749504B2 (en) * 2018-02-28 2023-09-05 Applied Materials, Inc. Methods and apparatus for common excitation of frequency generators
US10304663B1 (en) * 2018-07-19 2019-05-28 Lam Research Corporation RF generator for generating a modulated frequency or an inter-modulated frequency
US11183368B2 (en) * 2018-08-02 2021-11-23 Lam Research Corporation RF tuning systems including tuning circuits having impedances for setting and adjusting parameters of electrodes in electrostatic chucks
US10991550B2 (en) * 2018-09-04 2021-04-27 Lam Research Corporation Modular recipe controlled calibration (MRCC) apparatus used to balance plasma in multiple station system
CN108712813B (zh) * 2018-09-13 2019-01-04 中微半导体设备(上海)有限公司 一种可切换匹配网络及电感耦合等离子处理器
US11398387B2 (en) * 2018-12-05 2022-07-26 Lam Research Corporation Etching isolation features and dense features within a substrate
US10720305B2 (en) * 2018-12-21 2020-07-21 Advanced Energy Industries, Inc. Plasma delivery system for modulated plasma systems
US10943770B2 (en) * 2019-03-04 2021-03-09 Advanced Energy Industries, Inc. Detection of damage in matching networks
CN114008735B (zh) * 2019-04-15 2024-08-23 朗姆研究公司 用于确定电容器故障的早期预警系统和方法
KR102791775B1 (ko) 2019-05-07 2025-04-03 램 리써치 코포레이션 폐루프 다중 출력 rf 매칭
WO2021022303A1 (en) 2019-07-31 2021-02-04 Lam Research Corporation Radio frequency power generator having multiple output ports
TW202130229A (zh) * 2019-10-25 2021-08-01 美商蘭姆研究公司 在多站式積體電路製造腔室中的射頻(rf)功率不均衡化
JP7236985B2 (ja) * 2019-11-15 2023-03-10 東京エレクトロン株式会社 温度計測システム、温度計測方法及び基板処理装置
CN114762079B (zh) 2019-12-02 2025-02-28 朗姆研究公司 射频辅助等离子体生成中的阻抗变换
CN112992636B (zh) * 2019-12-17 2023-09-29 中微半导体设备(上海)股份有限公司 用于等离子体处理设备的射频功率源装置和射频功率分配方法
TWI899187B (zh) * 2020-03-19 2025-10-01 美商蘭姆研究公司 基板處理系統
US11994542B2 (en) 2020-03-27 2024-05-28 Lam Research Corporation RF signal parameter measurement in an integrated circuit fabrication chamber
CN116075917A (zh) 2020-06-12 2023-05-05 朗姆研究公司 通过rf耦合结构对等离子体形成的控制
KR102825317B1 (ko) 2020-11-19 2025-06-26 삼성전자주식회사 반도체 소자의 제조 장치 및 반도체 소자의 제조 방법
KR20240072245A (ko) 2021-12-31 2024-05-23 인투코어테크놀로지 주식회사 멀티 스테이션에 대한 플라즈마 공정 시스템
KR102844433B1 (ko) * 2022-02-07 2025-08-12 주식회사 뉴파워 프라즈마 플라즈마 발생 장치 및 그 제어 방법
DE102022111529A1 (de) * 2022-05-09 2023-11-09 TRUMPF Hüttinger GmbH + Co. KG Stromversorgungsanordnung, Plasmaerzeugungseinrichtung und Verfahren zur Steuerung mehrerer Plasmaprozesse
US12394606B2 (en) 2022-10-21 2025-08-19 Applied Materials, Inc. Impedance control of local areas of a substrate during plasma deposition thereon in a large PECVD chamber
US12293897B2 (en) * 2023-02-28 2025-05-06 Applied Materials, Inc. Radio frequency diverter assembly enabling on-demand different spatial
CN118919388B (zh) * 2023-05-08 2025-09-30 江苏鲁汶仪器股份有限公司 一种射频等离子体匹配网络电路

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5574967A (en) * 1994-01-11 1996-11-12 Ericsson Ge Mobile Communications, Inc. Waste energy control and management in power amplifiers
KR100233649B1 (ko) * 1997-06-24 1999-12-01 윤종용 디스플레이 장치의 채널 자동절환장치
TW391021B (en) * 1997-09-08 2000-05-21 Murata Manufacturing Co Variable capacitor
US6265831B1 (en) * 1999-03-31 2001-07-24 Lam Research Corporation Plasma processing method and apparatus with control of rf bias
US6199506B1 (en) 1999-06-30 2001-03-13 Novellus Systems, Inc. Radio frequency supply circuit for in situ cleaning of plasma-enhanced chemical vapor deposition chamber using NF3 or NF3/He mixture
WO2001073814A2 (en) * 2000-03-28 2001-10-04 Tokyo Electron Limited Method and apparatus for controlling power delivered to a multiple segment electrode
US6677711B2 (en) * 2001-06-07 2004-01-13 Lam Research Corporation Plasma processor method and apparatus
US7042311B1 (en) * 2003-10-10 2006-05-09 Novellus Systems, Inc. RF delivery configuration in a plasma processing system
US7169256B2 (en) * 2004-05-28 2007-01-30 Lam Research Corporation Plasma processor with electrode responsive to multiple RF frequencies
WO2006133132A2 (en) * 2005-06-03 2006-12-14 Plasma Control Systems, Llc Combinations of plasma production devices and method and rf driver circuits with adjustable duty cycle
CN100362619C (zh) * 2005-08-05 2008-01-16 中微半导体设备(上海)有限公司 真空反应室的射频匹配耦合网络及其配置方法
CN101287327B (zh) * 2007-04-13 2011-07-20 中微半导体设备(上海)有限公司 射频功率源系统及使用该射频功率源系统的等离子体反应腔室
CN101451237B (zh) * 2007-11-30 2012-02-08 中微半导体设备(上海)有限公司 具有多个等离子体反应区域的包括多个处理平台的等离子体反应室
US7811410B2 (en) * 2008-06-19 2010-10-12 Lam Research Corporation Matching circuit for a complex radio frequency (RF) waveform
US20100015357A1 (en) * 2008-07-18 2010-01-21 Hiroji Hanawa Capacitively coupled plasma etch chamber with multiple rf feeds
US8282983B1 (en) 2008-09-30 2012-10-09 Novellus Systems, Inc. Closed loop control system for RF power balancing of the stations in a multi-station processing tool with shared RF source
US8515362B2 (en) * 2008-10-30 2013-08-20 Qualcomm, Incorporated Mixer architectures
JP2013004172A (ja) * 2011-06-10 2013-01-07 Tokyo Electron Ltd 高周波電力分配装置およびそれを用いた基板処理装置
JP5955520B2 (ja) * 2011-09-09 2016-07-20 東京エレクトロン株式会社 マイクロ波処理装置およびその制御方法
TW201324473A (zh) * 2011-12-02 2013-06-16 Novatek Microelectronics Corp 影像顫化模組
US9082589B2 (en) * 2012-10-09 2015-07-14 Novellus Systems, Inc. Hybrid impedance matching for inductively coupled plasma system
US9620337B2 (en) * 2013-01-31 2017-04-11 Lam Research Corporation Determining a malfunctioning device in a plasma system
US9263350B2 (en) * 2014-06-03 2016-02-16 Lam Research Corporation Multi-station plasma reactor with RF balancing
US10187032B2 (en) * 2016-06-17 2019-01-22 Lam Research Corporation Combiner and distributor for adjusting impedances or power across multiple plasma processing stations

Also Published As

Publication number Publication date
US10622962B2 (en) 2020-04-14
TW202415147A (zh) 2024-04-01
JP2017224601A (ja) 2017-12-21
KR20210042888A (ko) 2021-04-20
KR102123722B1 (ko) 2020-06-17
US12143087B2 (en) 2024-11-12
TWI860897B (zh) 2024-11-01
KR102241517B1 (ko) 2021-04-16
US10187032B2 (en) 2019-01-22
TW201808057A (zh) 2018-03-01
US20250070741A1 (en) 2025-02-27
TW202504394A (zh) 2025-01-16
KR20170142876A (ko) 2017-12-28
US20170365907A1 (en) 2017-12-21
KR20230119102A (ko) 2023-08-16
CN111534810B (zh) 2023-03-07
KR102308928B1 (ko) 2021-10-05
KR20200069284A (ko) 2020-06-16
KR20210120959A (ko) 2021-10-07
CN111534810A (zh) 2020-08-14
KR102566504B1 (ko) 2023-08-10
US20220158604A1 (en) 2022-05-19
KR102418494B1 (ko) 2022-07-06
TW202234951A (zh) 2022-09-01
US20190149119A1 (en) 2019-05-16
KR20220098714A (ko) 2022-07-12
CN107523810A (zh) 2017-12-29
TWI766870B (zh) 2022-06-11
US11258421B2 (en) 2022-02-22
US20200195216A1 (en) 2020-06-18
CN107523810B (zh) 2020-05-15
TWI827048B (zh) 2023-12-21

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