KR102123722B1 - 복수의 플라즈마 프로세싱 스테이션들에 걸쳐 임피던스들 또는 전력을 조정하기 위한 결합기 및 분배기 - Google Patents

복수의 플라즈마 프로세싱 스테이션들에 걸쳐 임피던스들 또는 전력을 조정하기 위한 결합기 및 분배기 Download PDF

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KR102123722B1
KR102123722B1 KR1020170066496A KR20170066496A KR102123722B1 KR 102123722 B1 KR102123722 B1 KR 102123722B1 KR 1020170066496 A KR1020170066496 A KR 1020170066496A KR 20170066496 A KR20170066496 A KR 20170066496A KR 102123722 B1 KR102123722 B1 KR 102123722B1
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frequency
plasma processing
signal
coupled
combiner
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KR20170142876A (ko
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수닐 카푸어
조지 토마스
야스완스 란지네니
에드워드 아우구스티니악
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램 리써치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H03H7/40—Automatic matching of load impedance to source impedance

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
KR1020170066496A 2016-06-17 2017-05-30 복수의 플라즈마 프로세싱 스테이션들에 걸쳐 임피던스들 또는 전력을 조정하기 위한 결합기 및 분배기 Active KR102123722B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201662351879P 2016-06-17 2016-06-17
US62/351,879 2016-06-17
US15/254,769 US10187032B2 (en) 2016-06-17 2016-09-01 Combiner and distributor for adjusting impedances or power across multiple plasma processing stations
US15/254,769 2016-09-01

Related Child Applications (1)

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KR1020200069563A Division KR102241517B1 (ko) 2016-06-17 2020-06-09 복수의 플라즈마 프로세싱 스테이션들에 걸쳐 임피던스들 또는 전력을 조정하기 위한 결합기 및 분배기

Publications (2)

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KR20170142876A KR20170142876A (ko) 2017-12-28
KR102123722B1 true KR102123722B1 (ko) 2020-06-17

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KR1020170066496A Active KR102123722B1 (ko) 2016-06-17 2017-05-30 복수의 플라즈마 프로세싱 스테이션들에 걸쳐 임피던스들 또는 전력을 조정하기 위한 결합기 및 분배기
KR1020200069563A Active KR102241517B1 (ko) 2016-06-17 2020-06-09 복수의 플라즈마 프로세싱 스테이션들에 걸쳐 임피던스들 또는 전력을 조정하기 위한 결합기 및 분배기
KR1020210047411A Active KR102308928B1 (ko) 2016-06-17 2021-04-12 복수의 플라즈마 프로세싱 스테이션들에 걸쳐 임피던스들 또는 전력을 조정하기 위한 결합기 및 분배기
KR1020210128276A Active KR102418494B1 (ko) 2016-06-17 2021-09-28 복수의 플라즈마 프로세싱 스테이션들에 걸쳐 임피던스들 또는 전력을 조정하기 위한 결합기 및 분배기
KR1020220081929A Active KR102566504B1 (ko) 2016-06-17 2022-07-04 복수의 플라즈마 프로세싱 스테이션들에 걸쳐 임피던스들 또는 전력을 조정하기 위한 결합기 및 분배기
KR1020230103673A Pending KR20230119102A (ko) 2016-06-17 2023-08-08 복수의 플라즈마 프로세싱 스테이션들에 걸쳐 임피던스들또는 전력을 조정하기 위한 결합기 및 분배기

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KR1020200069563A Active KR102241517B1 (ko) 2016-06-17 2020-06-09 복수의 플라즈마 프로세싱 스테이션들에 걸쳐 임피던스들 또는 전력을 조정하기 위한 결합기 및 분배기
KR1020210047411A Active KR102308928B1 (ko) 2016-06-17 2021-04-12 복수의 플라즈마 프로세싱 스테이션들에 걸쳐 임피던스들 또는 전력을 조정하기 위한 결합기 및 분배기
KR1020210128276A Active KR102418494B1 (ko) 2016-06-17 2021-09-28 복수의 플라즈마 프로세싱 스테이션들에 걸쳐 임피던스들 또는 전력을 조정하기 위한 결합기 및 분배기
KR1020220081929A Active KR102566504B1 (ko) 2016-06-17 2022-07-04 복수의 플라즈마 프로세싱 스테이션들에 걸쳐 임피던스들 또는 전력을 조정하기 위한 결합기 및 분배기
KR1020230103673A Pending KR20230119102A (ko) 2016-06-17 2023-08-08 복수의 플라즈마 프로세싱 스테이션들에 걸쳐 임피던스들또는 전력을 조정하기 위한 결합기 및 분배기

Country Status (5)

Country Link
US (5) US10187032B2 (Direct)
JP (1) JP6981781B2 (Direct)
KR (6) KR102123722B1 (Direct)
CN (2) CN107523810B (Direct)
TW (4) TW202504394A (Direct)

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US10622962B2 (en) 2020-04-14
TW202415147A (zh) 2024-04-01
JP6981781B2 (ja) 2021-12-17
JP2017224601A (ja) 2017-12-21
KR20210042888A (ko) 2021-04-20
US12143087B2 (en) 2024-11-12
TWI860897B (zh) 2024-11-01
KR102241517B1 (ko) 2021-04-16
US10187032B2 (en) 2019-01-22
TW201808057A (zh) 2018-03-01
US20250070741A1 (en) 2025-02-27
TW202504394A (zh) 2025-01-16
KR20170142876A (ko) 2017-12-28
US20170365907A1 (en) 2017-12-21
KR20230119102A (ko) 2023-08-16
CN111534810B (zh) 2023-03-07
KR102308928B1 (ko) 2021-10-05
KR20200069284A (ko) 2020-06-16
KR20210120959A (ko) 2021-10-07
CN111534810A (zh) 2020-08-14
KR102566504B1 (ko) 2023-08-10
US20220158604A1 (en) 2022-05-19
KR102418494B1 (ko) 2022-07-06
TW202234951A (zh) 2022-09-01
US20190149119A1 (en) 2019-05-16
KR20220098714A (ko) 2022-07-12
CN107523810A (zh) 2017-12-29
TWI766870B (zh) 2022-06-11
US11258421B2 (en) 2022-02-22
US20200195216A1 (en) 2020-06-18
CN107523810B (zh) 2020-05-15
TWI827048B (zh) 2023-12-21

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