JP6974502B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6974502B2
JP6974502B2 JP2019565170A JP2019565170A JP6974502B2 JP 6974502 B2 JP6974502 B2 JP 6974502B2 JP 2019565170 A JP2019565170 A JP 2019565170A JP 2019565170 A JP2019565170 A JP 2019565170A JP 6974502 B2 JP6974502 B2 JP 6974502B2
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Prior art keywords
layer
insulator
silicon substrate
insulator layer
semiconductor device
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JP2019565170A
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Japanese (ja)
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JP2020522135A5 (enExample
JP2020522135A (ja
Inventor
ヘイッキ ヴィリヤネン
ペッカ ランタカリ
タウノ ヴァハ−ヘイッキラ
エサ トゥオヴィネン
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VTT Technical Research Centre of Finland Ltd
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VTT Technical Research Centre of Finland Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H10D86/85—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP2019565170A 2017-05-29 2018-05-28 半導体装置 Active JP6974502B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FI20175480 2017-05-29
FI20175480 2017-05-29
PCT/FI2018/050404 WO2018220275A1 (en) 2017-05-29 2018-05-28 Semiconductor apparatus

Publications (3)

Publication Number Publication Date
JP2020522135A JP2020522135A (ja) 2020-07-27
JP2020522135A5 JP2020522135A5 (enExample) 2021-05-06
JP6974502B2 true JP6974502B2 (ja) 2021-12-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019565170A Active JP6974502B2 (ja) 2017-05-29 2018-05-28 半導体装置

Country Status (6)

Country Link
US (2) US11380600B2 (enExample)
EP (1) EP3631855A1 (enExample)
JP (1) JP6974502B2 (enExample)
KR (1) KR102456608B1 (enExample)
CN (1) CN110870067B (enExample)
WO (1) WO2018220275A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112490237A (zh) * 2020-12-16 2021-03-12 咸阳振峰电子有限公司 一种多晶片晶体组封装结构及其应用
WO2023070496A1 (zh) * 2021-10-29 2023-05-04 京东方科技集团股份有限公司 集成有无源器件的基板及其制备方法
CN115172255A (zh) * 2022-07-05 2022-10-11 上海芯波电子科技有限公司 一种基于翘曲度及应力改善后的ipd滤波器制造方法
CN119213693A (zh) * 2023-04-27 2024-12-27 京东方科技集团股份有限公司 滤波器及其制备方法、电子设备
CN118841408B (zh) * 2024-09-20 2025-02-07 苏州凌存科技有限公司 一种半导体电容及其阵列

Family Cites Families (20)

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NL161617C (nl) * 1968-06-17 1980-02-15 Nippon Electric Co Halfgeleiderinrichting met vlak oppervlak en werkwijze voor het vervaardigen daarvan.
JPH01309334A (ja) * 1988-06-08 1989-12-13 Hitachi Ltd 半導体装置の製造方法
US6737727B2 (en) 2001-01-12 2004-05-18 International Business Machines Corporation Electronic structures with reduced capacitance
EP1743378A1 (en) 2004-04-27 2007-01-17 Koninklijke Philips Electronics N.V. Semiconductor device and method of manufacturing such a device
ATE475197T1 (de) * 2004-04-27 2010-08-15 Nxp Bv Halbleiterbauelement und verfahren zur herstellung eines solchen bauelements
JP2007142144A (ja) * 2005-11-18 2007-06-07 Matsushita Electric Ind Co Ltd 電界効果トランジスタ集積回路及びその製造方法
US7365627B2 (en) * 2006-03-14 2008-04-29 United Microelectronics Corp. Metal-insulator-metal transformer and method for manufacturing the same
US7935607B2 (en) * 2007-04-09 2011-05-03 Freescale Semiconductor, Inc. Integrated passive device with a high resistivity substrate and method for forming the same
US7868419B1 (en) 2007-10-18 2011-01-11 Rf Micro Devices, Inc. Linearity improvements of semiconductor substrate based radio frequency devices
US20090236689A1 (en) 2008-03-24 2009-09-24 Freescale Semiconductor, Inc. Integrated passive device and method with low cost substrate
JP2011040621A (ja) * 2009-08-12 2011-02-24 Renesas Electronics Corp 半導体装置の設計方法および半導体装置の製造方法
US20110147764A1 (en) * 2009-08-27 2011-06-23 Cree, Inc. Transistors with a dielectric channel depletion layer and related fabrication methods
KR20120039947A (ko) * 2010-10-18 2012-04-26 삼성모바일디스플레이주식회사 표시 장치 및 그 제조 방법
JP2014036213A (ja) * 2012-08-10 2014-02-24 Sharp Corp 半導体装置およびその製造方法
US9754814B2 (en) * 2013-03-08 2017-09-05 Newport Fab, Llc Integrated passive device having improved linearity and isolation
US8969171B2 (en) * 2013-03-11 2015-03-03 Taiwan Semiconductor Manufacturing Co., Ltd. Method of making deep trench, and devices formed by the method
US9385079B2 (en) 2014-01-29 2016-07-05 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for forming stacked capacitors with fuse protection
US20150295101A1 (en) * 2014-04-11 2015-10-15 Nth Tech Corporation Methods for enhancing exciton decoupling with a static electric field and devices thereof
US9620617B2 (en) * 2014-09-04 2017-04-11 Newport Fab, Llc Structure and method for reducing substrate parasitics in semiconductor on insulator technology
CN104241410B (zh) 2014-09-24 2017-07-14 中国科学院宁波材料技术与工程研究所 复合硅基材料及其制法和应用

Also Published As

Publication number Publication date
US11380600B2 (en) 2022-07-05
WO2018220275A1 (en) 2018-12-06
KR20200014811A (ko) 2020-02-11
CN110870067B (zh) 2024-04-02
KR102456608B1 (ko) 2022-10-19
EP3631855A1 (en) 2020-04-08
US20200152537A1 (en) 2020-05-14
CN110870067A (zh) 2020-03-06
JP2020522135A (ja) 2020-07-27
US20220301968A1 (en) 2022-09-22

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