JP2020522135A5 - - Google Patents
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- Publication number
- JP2020522135A5 JP2020522135A5 JP2019565170A JP2019565170A JP2020522135A5 JP 2020522135 A5 JP2020522135 A5 JP 2020522135A5 JP 2019565170 A JP2019565170 A JP 2019565170A JP 2019565170 A JP2019565170 A JP 2019565170A JP 2020522135 A5 JP2020522135 A5 JP 2020522135A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- silicon substrate
- insulator layer
- insulator
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012212 insulator Substances 0.000 claims 25
- 229910052751 metal Inorganic materials 0.000 claims 20
- 239000002184 metal Substances 0.000 claims 20
- 239000000758 substrate Substances 0.000 claims 14
- 239000004065 semiconductor Substances 0.000 claims 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 12
- 229910052710 silicon Inorganic materials 0.000 claims 12
- 239000010703 silicon Substances 0.000 claims 12
- 239000002019 doping agent Substances 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 230000004888 barrier function Effects 0.000 claims 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 2
- 150000003376 silicon Chemical class 0.000 claims 2
- 230000003068 static effect Effects 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI20175480 | 2017-05-29 | ||
| FI20175480 | 2017-05-29 | ||
| PCT/FI2018/050404 WO2018220275A1 (en) | 2017-05-29 | 2018-05-28 | Semiconductor apparatus |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020522135A JP2020522135A (ja) | 2020-07-27 |
| JP2020522135A5 true JP2020522135A5 (enExample) | 2021-05-06 |
| JP6974502B2 JP6974502B2 (ja) | 2021-12-01 |
Family
ID=62636231
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019565170A Active JP6974502B2 (ja) | 2017-05-29 | 2018-05-28 | 半導体装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US11380600B2 (enExample) |
| EP (1) | EP3631855A1 (enExample) |
| JP (1) | JP6974502B2 (enExample) |
| KR (1) | KR102456608B1 (enExample) |
| CN (1) | CN110870067B (enExample) |
| WO (1) | WO2018220275A1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112490237A (zh) * | 2020-12-16 | 2021-03-12 | 咸阳振峰电子有限公司 | 一种多晶片晶体组封装结构及其应用 |
| WO2023070496A1 (zh) * | 2021-10-29 | 2023-05-04 | 京东方科技集团股份有限公司 | 集成有无源器件的基板及其制备方法 |
| CN115172255A (zh) * | 2022-07-05 | 2022-10-11 | 上海芯波电子科技有限公司 | 一种基于翘曲度及应力改善后的ipd滤波器制造方法 |
| CN119213693A (zh) * | 2023-04-27 | 2024-12-27 | 京东方科技集团股份有限公司 | 滤波器及其制备方法、电子设备 |
| CN118841408B (zh) * | 2024-09-20 | 2025-02-07 | 苏州凌存科技有限公司 | 一种半导体电容及其阵列 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL161617C (nl) * | 1968-06-17 | 1980-02-15 | Nippon Electric Co | Halfgeleiderinrichting met vlak oppervlak en werkwijze voor het vervaardigen daarvan. |
| JPH01309334A (ja) * | 1988-06-08 | 1989-12-13 | Hitachi Ltd | 半導体装置の製造方法 |
| US6737727B2 (en) | 2001-01-12 | 2004-05-18 | International Business Machines Corporation | Electronic structures with reduced capacitance |
| EP1743378A1 (en) | 2004-04-27 | 2007-01-17 | Koninklijke Philips Electronics N.V. | Semiconductor device and method of manufacturing such a device |
| ATE475197T1 (de) * | 2004-04-27 | 2010-08-15 | Nxp Bv | Halbleiterbauelement und verfahren zur herstellung eines solchen bauelements |
| JP2007142144A (ja) * | 2005-11-18 | 2007-06-07 | Matsushita Electric Ind Co Ltd | 電界効果トランジスタ集積回路及びその製造方法 |
| US7365627B2 (en) * | 2006-03-14 | 2008-04-29 | United Microelectronics Corp. | Metal-insulator-metal transformer and method for manufacturing the same |
| US7935607B2 (en) * | 2007-04-09 | 2011-05-03 | Freescale Semiconductor, Inc. | Integrated passive device with a high resistivity substrate and method for forming the same |
| US7868419B1 (en) | 2007-10-18 | 2011-01-11 | Rf Micro Devices, Inc. | Linearity improvements of semiconductor substrate based radio frequency devices |
| US20090236689A1 (en) | 2008-03-24 | 2009-09-24 | Freescale Semiconductor, Inc. | Integrated passive device and method with low cost substrate |
| JP2011040621A (ja) * | 2009-08-12 | 2011-02-24 | Renesas Electronics Corp | 半導体装置の設計方法および半導体装置の製造方法 |
| US20110147764A1 (en) * | 2009-08-27 | 2011-06-23 | Cree, Inc. | Transistors with a dielectric channel depletion layer and related fabrication methods |
| KR20120039947A (ko) * | 2010-10-18 | 2012-04-26 | 삼성모바일디스플레이주식회사 | 표시 장치 및 그 제조 방법 |
| JP2014036213A (ja) * | 2012-08-10 | 2014-02-24 | Sharp Corp | 半導体装置およびその製造方法 |
| US9754814B2 (en) * | 2013-03-08 | 2017-09-05 | Newport Fab, Llc | Integrated passive device having improved linearity and isolation |
| US8969171B2 (en) * | 2013-03-11 | 2015-03-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of making deep trench, and devices formed by the method |
| US9385079B2 (en) | 2014-01-29 | 2016-07-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for forming stacked capacitors with fuse protection |
| US20150295101A1 (en) * | 2014-04-11 | 2015-10-15 | Nth Tech Corporation | Methods for enhancing exciton decoupling with a static electric field and devices thereof |
| US9620617B2 (en) * | 2014-09-04 | 2017-04-11 | Newport Fab, Llc | Structure and method for reducing substrate parasitics in semiconductor on insulator technology |
| CN104241410B (zh) | 2014-09-24 | 2017-07-14 | 中国科学院宁波材料技术与工程研究所 | 复合硅基材料及其制法和应用 |
-
2018
- 2018-05-28 US US16/617,307 patent/US11380600B2/en active Active
- 2018-05-28 EP EP18732132.8A patent/EP3631855A1/en active Pending
- 2018-05-28 CN CN201880045559.2A patent/CN110870067B/zh active Active
- 2018-05-28 WO PCT/FI2018/050404 patent/WO2018220275A1/en not_active Ceased
- 2018-05-28 KR KR1020197038311A patent/KR102456608B1/ko active Active
- 2018-05-28 JP JP2019565170A patent/JP6974502B2/ja active Active
-
2022
- 2022-06-08 US US17/835,009 patent/US20220301968A1/en not_active Abandoned
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