JP6973366B2 - 単結晶シリコンインゴットの製造方法及びシリコン単結晶引上げ装置 - Google Patents

単結晶シリコンインゴットの製造方法及びシリコン単結晶引上げ装置 Download PDF

Info

Publication number
JP6973366B2
JP6973366B2 JP2018237663A JP2018237663A JP6973366B2 JP 6973366 B2 JP6973366 B2 JP 6973366B2 JP 2018237663 A JP2018237663 A JP 2018237663A JP 2018237663 A JP2018237663 A JP 2018237663A JP 6973366 B2 JP6973366 B2 JP 6973366B2
Authority
JP
Japan
Prior art keywords
gas
single crystal
chamber
sub
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018237663A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020100516A (ja
Inventor
渉 杉村
英城 坂本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Priority to JP2018237663A priority Critical patent/JP6973366B2/ja
Priority to TW108131023A priority patent/TWI727410B/zh
Priority to CN201980084363.9A priority patent/CN113302346B/zh
Priority to PCT/JP2019/035535 priority patent/WO2020129330A1/ja
Priority to DE112019006305.7T priority patent/DE112019006305T5/de
Publication of JP2020100516A publication Critical patent/JP2020100516A/ja
Application granted granted Critical
Publication of JP6973366B2 publication Critical patent/JP6973366B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2018237663A 2018-12-19 2018-12-19 単結晶シリコンインゴットの製造方法及びシリコン単結晶引上げ装置 Active JP6973366B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2018237663A JP6973366B2 (ja) 2018-12-19 2018-12-19 単結晶シリコンインゴットの製造方法及びシリコン単結晶引上げ装置
TW108131023A TWI727410B (zh) 2018-12-19 2019-08-29 單結晶矽鑄錠的製造方法及矽單結晶拉引裝置
CN201980084363.9A CN113302346B (zh) 2018-12-19 2019-09-10 单晶硅锭的制造方法及单晶硅提拉装置
PCT/JP2019/035535 WO2020129330A1 (ja) 2018-12-19 2019-09-10 単結晶シリコンインゴットの製造方法及びシリコン単結晶引上げ装置
DE112019006305.7T DE112019006305T5 (de) 2018-12-19 2019-09-10 Verfahren zum produzieren eines einkristallsiliziumingots und siliziumeinkristallzieheinrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018237663A JP6973366B2 (ja) 2018-12-19 2018-12-19 単結晶シリコンインゴットの製造方法及びシリコン単結晶引上げ装置

Publications (2)

Publication Number Publication Date
JP2020100516A JP2020100516A (ja) 2020-07-02
JP6973366B2 true JP6973366B2 (ja) 2021-11-24

Family

ID=71102659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018237663A Active JP6973366B2 (ja) 2018-12-19 2018-12-19 単結晶シリコンインゴットの製造方法及びシリコン単結晶引上げ装置

Country Status (5)

Country Link
JP (1) JP6973366B2 (zh)
CN (1) CN113302346B (zh)
DE (1) DE112019006305T5 (zh)
TW (1) TWI727410B (zh)
WO (1) WO2020129330A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7468339B2 (ja) * 2020-12-24 2024-04-16 株式会社Sumco 単結晶引上げ装置の部品の清掃時に用いる集塵装置及び単結晶引上げ装置の部品の清掃方法
CN114387251B (zh) * 2022-01-12 2022-09-30 苏州天准科技股份有限公司 饱满点的监测方法、存储介质、终端和拉晶设备
DE102022212850A1 (de) 2022-11-30 2024-06-06 Robert Bosch Gesellschaft mit beschränkter Haftung Vorrichtung und Verfahren zur Überprüfung der Konzentration wenigstens eines chemischen Elements in einem Gas

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0777994B2 (ja) * 1989-11-16 1995-08-23 信越半導体株式会社 単結晶の酸素濃度コントロール方法及び装置
JPH1129399A (ja) * 1997-07-07 1999-02-02 Hitachi Cable Ltd ＧａＡｓ単結晶の製造方法及びその装置
JP2004521057A (ja) * 2000-12-22 2004-07-15 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 半導体成長用の結晶引上機の気体環境をモニタするためのプロセス
JP2003221296A (ja) * 2002-01-29 2003-08-05 Komatsu Electronic Metals Co Ltd 単結晶の製造装置及び製造方法
JP5047227B2 (ja) * 2009-05-27 2012-10-10 ジャパンスーパークォーツ株式会社 シリコン単結晶の製造方法及びシリコン単結晶引き上げ装置
JP5194146B2 (ja) * 2010-12-28 2013-05-08 ジルトロニック アクチエンゲゼルシャフト シリコン単結晶の製造方法、シリコン単結晶、およびウエハ
GB2490130A (en) * 2011-04-19 2012-10-24 Rec Wafer Norway As Directional solidification apparatus
JP5584712B2 (ja) * 2012-01-16 2014-09-03 パナソニック株式会社 シリコン精製方法
JP6390606B2 (ja) 2015-12-22 2018-09-19 信越半導体株式会社 単結晶製造装置及び単結晶の製造方法
JP6645406B2 (ja) * 2016-12-02 2020-02-14 株式会社Sumco 単結晶の製造方法

Also Published As

Publication number Publication date
DE112019006305T5 (de) 2021-09-09
JP2020100516A (ja) 2020-07-02
TWI727410B (zh) 2021-05-11
TW202025339A (zh) 2020-07-01
WO2020129330A1 (ja) 2020-06-25
CN113302346A (zh) 2021-08-24
CN113302346B (zh) 2023-11-03

Similar Documents

Publication Publication Date Title
JP6973366B2 (ja) 単結晶シリコンインゴットの製造方法及びシリコン単結晶引上げ装置
JP5708171B2 (ja) シリコン単結晶引き上げ装置及びシリコン単結晶の製造方法
JP3634867B2 (ja) 単結晶製造装置および製造方法
TWI432616B (zh) 摻碳單晶製造方法
JP5413354B2 (ja) シリコン単結晶引き上げ装置及びシリコン単結晶の製造方法
KR101285455B1 (ko) 실리카 유리 도가니의 제조 장치 및 실리카 유리 도가니의 제조 방법
JP5595318B2 (ja) 単結晶引上装置及び単結晶引き上げ方法
JP6202119B2 (ja) シリコン単結晶の製造方法
JP2010155762A (ja) シリコン単結晶の製造方法
WO2005001169A1 (ja) 単結晶の製造方法及び単結晶
JP3750174B2 (ja) 単結晶の製造装置および製造方法
JP6772977B2 (ja) シリコン単結晶引上げ装置及び単結晶シリコンインゴットの製造方法
JP4461776B2 (ja) シリコン単結晶の製造方法
JP4345597B2 (ja) 単結晶製造装置及び単結晶製造方法
JP3747696B2 (ja) シリコン単結晶引上げ装置の熱遮蔽部材
JP5428608B2 (ja) シリコン単結晶の育成方法
JP3900816B2 (ja) シリコンウェーハの製造方法
JP5780114B2 (ja) サファイア単結晶の製造方法
JP5838727B2 (ja) サファイア単結晶の製造方法及び製造装置
TW201934816A (zh) 用於提拉單晶的方法和設備、單晶和半導體晶圓
JP6699620B2 (ja) シリコン単結晶の製造方法
JPS63319288A (ja) 鍔付石英るつぼ
JP2024005479A (ja) Ｆｚ炉の清浄度測定方法及びこれを用いた単結晶の製造方法及び装置
JP2011032136A (ja) 液面高さレベル把握方法
JP2010095421A (ja) 多結晶シリコンの製造方法及び多結晶シリコンウェーハ

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20201221

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20211005

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20211018

R150 Certificate of patent or registration of utility model

Ref document number: 6973366

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150