JP6962866B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

Info

Publication number
JP6962866B2
JP6962866B2 JP2018106644A JP2018106644A JP6962866B2 JP 6962866 B2 JP6962866 B2 JP 6962866B2 JP 2018106644 A JP2018106644 A JP 2018106644A JP 2018106644 A JP2018106644 A JP 2018106644A JP 6962866 B2 JP6962866 B2 JP 6962866B2
Authority
JP
Japan
Prior art keywords
layer
resistance layer
concentration
boron
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018106644A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019212724A (ja
JP2019212724A5 (https=
Inventor
栄介 児玉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2018106644A priority Critical patent/JP6962866B2/ja
Priority to US16/407,916 priority patent/US10818747B2/en
Publication of JP2019212724A publication Critical patent/JP2019212724A/ja
Publication of JP2019212724A5 publication Critical patent/JP2019212724A5/ja
Application granted granted Critical
Publication of JP6962866B2 publication Critical patent/JP6962866B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/817—Combinations of field-effect devices and resistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3456—Polycrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/30—Diffusion for doping of conductive or resistive layers
    • H10P32/302—Doping polycrystalline silicon or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/447—Indexing scheme relating to amplifiers the amplifier being protected to temperature influence

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2018106644A 2018-06-04 2018-06-04 半導体装置およびその製造方法 Active JP6962866B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2018106644A JP6962866B2 (ja) 2018-06-04 2018-06-04 半導体装置およびその製造方法
US16/407,916 US10818747B2 (en) 2018-06-04 2019-05-09 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018106644A JP6962866B2 (ja) 2018-06-04 2018-06-04 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2019212724A JP2019212724A (ja) 2019-12-12
JP2019212724A5 JP2019212724A5 (https=) 2020-11-26
JP6962866B2 true JP6962866B2 (ja) 2021-11-05

Family

ID=68692799

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018106644A Active JP6962866B2 (ja) 2018-06-04 2018-06-04 半導体装置およびその製造方法

Country Status (2)

Country Link
US (1) US10818747B2 (https=)
JP (1) JP6962866B2 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7461373B2 (ja) 2019-11-25 2024-04-03 株式会社Ｎｔｔドコモ 端末及び通信方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6242314B1 (en) * 1998-09-28 2001-06-05 Taiwan Semiconductor Manufacturing Company Method for fabricating a on-chip temperature controller by co-implant polysilicon resistor
JP4547753B2 (ja) 2000-01-14 2010-09-22 富士電機システムズ株式会社 半導体装置の製造方法
JP2003078019A (ja) 2001-09-05 2003-03-14 Sanyo Electric Co Ltd 半導体装置
US6885280B2 (en) * 2003-01-31 2005-04-26 Fairchild Semiconductor Corporation High value split poly p-resistor with low standard deviation

Also Published As

Publication number Publication date
US10818747B2 (en) 2020-10-27
JP2019212724A (ja) 2019-12-12
US20190371881A1 (en) 2019-12-05

Similar Documents

Publication Publication Date Title
US7843013B2 (en) Semiconductor device and method for fabricating the same
JP6083930B2 (ja) 光電変換装置および撮像システム、光電変換装置の製造方法
US8294231B2 (en) Optical sensing device including visible and UV sensors
US10084033B2 (en) Semiconductor device and method for forming same
JP2015109343A (ja) 半導体装置の製造方法
JP2008538454A (ja) マスクなし多重シートポリシリコン抵抗器
US20090017625A1 (en) Methods For Removing Gate Sidewall Spacers In CMOS Semiconductor Fabrication Processes
TWI613816B (zh) 半導體裝置及其製造方法
US9379176B2 (en) Well resistors and polysilicon resistors
US20180070041A1 (en) Solid-state image sensor, method of manufacturing the same, and camera
US10777596B2 (en) Imaging apparatus, method of manufacturing the same, and device
US8748988B2 (en) Semiconductor device having resistor formed of a polycrystalline silicon film
US7592216B2 (en) Fabrication process of a semiconductor device having a capacitor
JP6962866B2 (ja) 半導体装置およびその製造方法
US10916574B2 (en) Imaging device, method of manufacturing the same, and apparatus
TW495921B (en) Improved BiCMOS process with low temperature coefficient resistor (TCRL)
JP2012028562A (ja) 半導体装置の製造方法
US20170358501A1 (en) High gain transistor for analog applications
JP2009071035A (ja) 半導体装置の製造方法
JP6362121B2 (ja) 光電変換装置および撮像システム、光電変換装置の製造方法
JP2006216857A (ja) 半導体装置の製造方法
JP2019161216A (ja) 撮像装置およびその製造方法ならびに機器
JP2013038273A (ja) 半導体装置の製造方法
JP2006186012A (ja) 半導体装置の製造方法
JP2008124061A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20201009

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20201009

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20210714

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210720

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210826

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20210921

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20211014

R150 Certificate of patent or registration of utility model

Ref document number: 6962866

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150