JP6962866B2 - 半導体装置およびその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 62
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 229910052796 boron Inorganic materials 0.000 claims description 106
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 105
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 55
- 239000012535 impurity Substances 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 34
- 238000009826 distribution Methods 0.000 claims description 22
- 239000013078 crystal Substances 0.000 claims description 19
- 238000000137 annealing Methods 0.000 claims description 9
- 229910015900 BF3 Inorganic materials 0.000 claims description 8
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 291
- 239000010408 film Substances 0.000 description 154
- 239000011229 interlayer Substances 0.000 description 75
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 36
- 229910052814 silicon oxide Inorganic materials 0.000 description 36
- 239000000758 substrate Substances 0.000 description 30
- 238000002347 injection Methods 0.000 description 28
- 239000007924 injection Substances 0.000 description 28
- 229920002120 photoresistant polymer Polymers 0.000 description 26
- 229920005591 polysilicon Polymers 0.000 description 24
- 230000004888 barrier function Effects 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 20
- 239000002184 metal Substances 0.000 description 20
- 229910021332 silicide Inorganic materials 0.000 description 15
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 15
- 102100024061 Integrator complex subunit 1 Human genes 0.000 description 11
- 101710092857 Integrator complex subunit 1 Proteins 0.000 description 11
- 101710092886 Integrator complex subunit 3 Proteins 0.000 description 11
- 102100025254 Neurogenic locus notch homolog protein 4 Human genes 0.000 description 11
- 102100028043 Fibroblast growth factor 3 Human genes 0.000 description 10
- 108050002021 Integrator complex subunit 2 Proteins 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 238000011161 development Methods 0.000 description 10
- 238000012545 processing Methods 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 102000003815 Interleukin-11 Human genes 0.000 description 9
- 108090000177 Interleukin-11 Proteins 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- 238000000926 separation method Methods 0.000 description 9
- 102000003814 Interleukin-10 Human genes 0.000 description 8
- 108090000174 Interleukin-10 Proteins 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 8
- 238000002161 passivation Methods 0.000 description 8
- 102000026633 IL6 Human genes 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000000059 patterning Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 102000015696 Interleukins Human genes 0.000 description 1
- 108010063738 Interleukins Proteins 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012887 quadratic function Methods 0.000 description 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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Description
第1端部と第2端部とを有し、かつ不純物を含む多結晶シリコンよりなる抵抗層が形成される。第1端部にて抵抗層に接続する第1導電層と、第2端部にて抵抗層に接続する第2導電層とが形成される。不純物を含む抵抗層を形成する工程は、抵抗層を成膜する工程と、抵抗層にボロンを導入する工程と、抵抗層に導入されたボロンを活性化させるために抵抗層をアニールする工程とを含む。アニールされた抵抗層の厚み方向におけるボロンの濃度分布は、濃度ピークと、濃度ピークにおけるボロンの濃度よりも2桁以上低いボロンの濃度を有する低濃度部分とを含む。
(実施の形態1)
図1に示されるように、本実施の形態における半導体装置は、たとえば基準電流を作るバイアス回路に用いられる。本実施の形態に用いられる抵抗層は、このバイアス回路図においてたとえば記号Aで示す箇所に用いられる。またnMOS(Metal Oxide Semiconductor)トランジスタは、このバイアス回路においてたとえば記号Bで示す箇所に用いられる。
次に、本実施の形態の効果について比較例と対比して説明する。
まず抵抗層RLの線幅Wと第1および第2コンタクトプラグ導電層PL1a、PL1b間の距離Lとを様々に変えた抵抗層RLに対応するTEG(Test Element Group)が複数個形成される。複数個のTEGの各々には同条件でイオン注入が行われる。これらの各TEGについて、第1および第2コンタクトプラグ導電層PL1a、PL1bの各々と抵抗層RLとの接触抵抗Rcを含む抵抗層RLの抵抗Rは、下の式(1)において表される。なお以下の式(1)においてΔWは、加工によるWの変動量を示す。
複数個のTEGにおいてシート抵抗値が同じであるという前提で、上の式(1)からシート抵抗値が算出される。
本実施の形態の半導体装置の構成について図17および図18を用いて説明する。
実施の形態1、2においては多結晶シリコンに注入されるドーパントがボロンである場合について説明したが、このドーパントはフッ化ボロン(BF2)であってもよい。フッ化ボロンをボロンと同じ濃度ピーク位置にするためには、フッ化ボロンの注入エネルギーはボロンの注入エネルギーよりも高くなる。このためフッ化ボロンの方がボロンよりも、濃度ピーク位置を多結晶シリコンの上面に近い位置にすることが容易である。
図21(A)、(B)に示されるように、本実施の形態においては、実施の形態1の低温度係数、高シート抵抗の第1抵抗層RL1に追加して、特に低温度係数を必要としないさらに高シート抵抗の第2抵抗層RL2が第1抵抗層RL1と同時に形成されてもよい。以下、本実施の形態として、上記第1抵抗層RL1と第2抵抗層RL2とを形成する方法について説明する。
Claims (7)
- 第1導電層と、
第2導電層と、
第1端部と第2端部とを有し、前記第1端部にて前記第1導電層に接続され、前記第2端部にて前記第2導電層に接続された抵抗層とを備え、
前記抵抗層はn型不純物を含まず、かつp型不純物を含む多結晶シリコンよりなり、
前記抵抗層の厚み方向における前記p型不純物の濃度分布は、濃度ピークと、前記濃度ピークにおける前記p型不純物の濃度よりも2桁以上低い前記p型不純物の濃度を有する低濃度部分とを含み、
前記濃度ピークおよび前記低濃度部分は、前記第1端部および前記第2端部の間において、前記抵抗層の中央部に位置し、
前記抵抗層は、下面と、前記下面に対して前記厚み方向に対向する上面とを有し、
前記抵抗層は、第1層と、前記第1層の前記上面側の面に接する第2層とを有し、
前記第1層における複数の結晶粒と前記第2層における複数の結晶粒とは、前記第1層と前記第2層との境界において互いに分断されている、半導体装置。 - 前記濃度ピークは、前記第2層内に位置する、請求項1に記載の半導体装置。
- 前記p型不純物はボロンを含む、請求項1に記載の半導体装置。
- 第1端部と第2端部とを有し、n型不純物を含まず、かつp型不純物を含む多結晶シリコンよりなる抵抗層を形成する工程と、
前記第1端部にて前記抵抗層に接続する第1導電層と、前記第2端部にて前記抵抗層に接続する第2導電層とを形成する工程とを備え、
前記p型不純物を含む前記抵抗層を形成する工程は、
前記抵抗層を成膜する工程と、
前記抵抗層にp型不純物を導入する工程と、
前記抵抗層に導入された前記p型不純物を活性化させるために前記抵抗層をアニールする工程とを含み、
前記アニールされた前記抵抗層の厚み方向における前記p型不純物の濃度分布は、濃度ピークと、前記濃度ピークにおける前記p型不純物の濃度よりも2桁以上低い前記p型不純物の濃度を有する低濃度部分とを含み、
前記濃度ピークおよび前記低濃度部分は、前記第1端部および前記第2端部の間において、前記抵抗層の中央部に位置し、
前記抵抗層は、下面と、前記下面に対して前記厚み方向に対向する上面とを有し、
前記抵抗層を成膜する工程は、第1層を形成する工程と、前記第1層の前記上面側の面に接する第2層を形成する工程とを有し、
前記第1層における複数の結晶粒と前記第2層における複数の結晶粒とは、前記第1層と前記第2層との境界において互いに分断されるように前記第1層および前記第2層が形成される、半導体装置の製造方法。 - 前記抵抗層に前記p型不純物を導入する工程は、前記濃度ピークが前記第2層内に位置するように行われる、請求項4に記載の半導体装置の製造方法。
- 前記p型不純物はボロンを含む、請求項5に記載の半導体装置の製造方法。
- 前記抵抗層に前記p型不純物を導入する工程において、前記抵抗層にフッ化ボロンを注入することにより前記抵抗層に前記p型不純物が導入される、請求項6に記載の半導体装置の製造方法。
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