JP6960459B2 - Manufacturing method of semiconductor devices - Google Patents

Description

The present invention relates to a method for manufacturing a semiconductor device including a sealed electronic component.

Conventionally, in a method for manufacturing a semiconductor device, a semiconductor package is manufactured by sealing an electronic component such as a semiconductor chip by using a sealing sheet provided with a sealing material formed in a sheet shape.

For example, Patent Document 1 discloses a method in which a semiconductor chip is placed on a semiconductor wafer as a support and then the semiconductor chip is sealed with a sealing sheet. Further, Patent Document 2 discloses a method in which a semiconductor chip is placed on a wiring circuit board and then the semiconductor chip is sealed with a sheet-like resin composition. Wiring is provided in advance on the semiconductor wafer and the wiring circuit board, and when the semiconductor chip is mounted, the take-out electrode existing on the semiconductor chip and the wiring are electrically connected to each other. It is mounted on a semiconductor wafer or a wiring circuit board of the above.

Japanese Unexamined Patent Publication No. 2016-96308 Patent No. 5042297

In recent years, high integration and high functionality of semiconductor devices have been required, and for example, development of a substrate in which a semiconductor chip is built (chip built-in substrate) is being promoted. However, the semiconductor packages obtained by the methods disclosed in Patent Document 1 and Patent Document 2 cannot sufficiently meet the demands for high integration and high functionality of semiconductor devices.

Further, in recent years, development of a fan-out type wafer level package (FOWLP), a fan-out type panel level package (FOPLP), and the like has been promoted. In such a package manufacturing method, a plurality of semiconductor packages can be obtained by collectively sealing a plurality of semiconductor chips with a sealing sheet and then dividing them at predetermined positions. As a result, a semiconductor package can be produced efficiently and with a high yield. Therefore, it is also required to develop a sealing sheet suitable for use in such a package manufacturing method.

The present invention has been made in view of such an actual situation, and provides a method for manufacturing a semiconductor device, which enables highly integrated and highly functional semiconductor devices and can be applied to an efficient and high-yield method. do.

In order to achieve the above object, firstly, the present invention is an electronic component mounting step of mounting one or more electronic components on the adhesive surface of an adhesive sheet, at least cured so as to cover at least the electronic components. The first laminating step of laminating the first resin composition layer in the first sealing sheet including the first resin composition layer of sex, the adhesive sheet from the electronic component and the first resin composition layer. A second lamination in which a second sealing sheet provided with at least a curable second resin composition layer is laminated so as to cover the exposed surface of the electronic component exposed by the peeling of the adhesive sheet. Step, a first cured layer formed by curing the first resin composition layer, a second cured layer formed by curing the second resin composition layer, the first cured layer, and the above. A curing step of obtaining a sealed body including the electronic component sealed by the second cured layer, a hole penetrating at least one of the first cured layer and the second cured layer, and the electron. A hole forming step of forming a hole that exposes a part of the surface of the component, a desmear step of desmearing the sealed body in which the hole is formed, and an electrode electrically connected to the electronic component through the hole. Provided is a method for manufacturing a semiconductor device, which comprises an electrode forming step of forming (Invention 1).

The method for manufacturing a semiconductor device according to the above invention (Invention 1) includes the above-mentioned steps, so that the steps up to electrode formation can be efficiently performed with extremely simple work contents. Further, since holes are formed in at least one of the first cured layer and the second cured layer and electrodes are provided in the holes, electrodes can be formed on the desired side of the semiconductor package, particularly on both sides. This facilitates three-dimensional mounting of the semiconductor package, and as a result, facilitates high integration and high functionality of the semiconductor device. Further, the above manufacturing method can also be applied to manufacturing of FOWLP, FOPLP, component-embedded substrate and the like. In particular, since the above manufacturing method can collectively seal a plurality of electronic components, for example, the frame-shaped member and the plurality of electronic components are collectively sealed by using a frame-shaped member described later. It can be applied to the manufacturing process of so-called panel level packages.

In the above invention (Invention 1), the curing of the first resin composition layer is preferably performed at a stage between the first laminating step and the peeling step (Invention 2).

In the above inventions (Inventions 1 and 2), it is preferable that at least one of the first cured layer and the second cured layer exhibits insulating properties (Invention 3).

In the above inventions (Inventions 1 to 3), curing of at least one of the first resin composition layer and the second resin composition layer is preferably performed by heat treatment (Invention 4).

In the above invention (Invention 4), it is preferable that the heat treatment is carried out stepwise by a plurality of heat treatments (Invention 5).

In the above invention (Invention 5), the heat treatment is preferably carried out by a first heat treatment of heat curing at a temperature T1 and a second heat treatment of heat curing at a temperature T2 higher than the temperature T1. (Invention 6).

In the above inventions (Inventions 1 to 6), the curing of the first resin composition layer is preferably performed so that the reaction rate of the first cured layer is 85% or more (Invention 7).

In the above inventions (Inventions 1 to 7), it is preferable that the second resin composition layer is cured so that the reaction rate of the second cured layer is 85% or more (Invention 8).

In the above inventions (Inventions 1 to 8), at least one of the first resin composition layer and the second resin composition layer is formed from a resin composition containing a thermosetting resin. Is preferable (Invention 9).

In the above invention (Invention 9), the resin composition preferably contains an inorganic filler (Invention 10).

In the above invention (Invention 10), it is preferable that the inorganic filler is surface-treated with a surface treatment agent having a ^{minimum coating area of less than 550 m 2 / g (Invention 11).}

In the above inventions (Inventions 9 to 11), the first resin composition layer and the second resin composition layer are preferably formed from the resin compositions having the same composition (invention). 12).

In the above inventions (Inventions 1 to 12), the thickness of the second resin composition layer is preferably 1 μm or more and 100 μm or less (Invention 13).

In the above inventions (Inventions 1 to 13), the thickness of the first resin composition layer is preferably 50 μm or more and 1000 μm or less (Invention 14).

The method for manufacturing a semiconductor device of the present invention enables highly integrated and highly functional semiconductor devices, and can also be applied to an efficient and high-yield method.

It is sectional drawing explaining a part of the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is sectional drawing explaining a part of the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is sectional drawing explaining a part of the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is sectional drawing explaining a part of the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention.

Hereinafter, embodiments of the present invention will be described. The method for manufacturing a semiconductor device according to an embodiment of the present invention is an electronic component mounting step of mounting one or two or more electronic components on the adhesive surface of an adhesive sheet, at least curing so as to cover at least the electronic components. The first laminating step of laminating the first resin composition layer in the first sealing sheet provided with the first resin composition layer of sex, the above-mentioned adhesive sheet from the above-mentioned electronic component and the above-mentioned first resin composition layer. A second lamination in which a second sealing sheet provided with at least a curable second resin composition layer is laminated so as to cover the exposed surface of the electronic component exposed by the peeling of the adhesive sheet. Steps, a first cured layer obtained by curing the first resin composition layer, a second cured layer formed by curing the second resin composition layer, the first cured layer, and the above. A curing step of obtaining a sealed body including the electronic component sealed by the second cured layer, holes penetrating at least one of the first cured layer and the second cured layer, and the electrons. A hole forming step of forming a hole that exposes a part of the surface of the component, a desmear step of desmearing the sealed body in which the hole is formed, and an electrode electrically connected to the electronic component through the hole. The step of forming an electrode to be formed is included.

[Encapsulation sheet]
First, the first sealing sheet and the sealing sheet that can be used as the second sealing sheet will be described. The sealing sheet includes at least a curable resin composition layer. Here, the fact that the resin composition layer has curability means that the resin composition layer can be cured, in other words, the resin composition layer is uncured in the state of forming the sealing sheet. .. The resin composition layer may be thermosetting or energy ray curable, but is preferably thermosetting. Even if it is difficult to irradiate the laminated resin composition layer with energy rays due to the thermosetting of the resin composition layer, the resin composition layer can be satisfactorily cured by heating the resin composition layer. Can be done. Further, the sealing sheet may further include a release sheet laminated on at least one surface of the resin composition layer.

1. 1. Resin composition layer The resin composition layer is preferably formed from a resin composition containing a thermosetting resin. When the resin composition contains a thermosetting resin, the formed resin composition layer tends to have a desired curability. The cured layer formed by curing the resin composition layer preferably exhibits insulating properties. When the cured layer exhibits insulating properties, defects such as short circuits can be suppressed in the obtained semiconductor device, and excellent performance can be obtained. In particular, it is preferable that both the first cured layer and the second cured layer have insulating properties.

(1) Thermosetting Resin When the resin composition contains a thermosetting resin, it becomes easy to firmly seal the electronic component when the electronic component is sealed by the obtained resin composition layer. The thermosetting resin is not particularly limited as long as it can cure the resin composition layer, and for example, a resin usually contained in a sealing material can be used. Specific examples thereof include epoxy resins, phenol resins, naphthol resins, active ester resins, benzoxazine resins, cyanate ester resins, etc., and these may be used alone or in combination of two or more. Can be done.

Generally, the epoxy resin has a property of forming a three-dimensional network when heated to form a strong cured product. As such an epoxy resin, various known epoxy resins can be used. Specifically, glycidyl ethers of phenols such as bisphenol A, bisphenol F, resorcinol, phenylnovolac, and cresolnovolac; butanediol and polyethylene. Glysidyl ethers of alcohols such as glycols and polypropylene glycols; Glysidyl ethers of carboxylic acids such as phthalic acid, isophthalic acid and tetrahydrophthalic acid; Alkylglycidyl type epoxy resin; vinylcyclohexanediepoxide, 3,4-epoxycyclohexylmethyl-3,4-dicyclohexanecarboxylate, 2- (3,4-epoxy) cyclohexyl-5,5-spiro (3,4-) Epoxy) Cyclohexane-m-dioxane and the like, the so-called alicyclic epoxide in which an epoxy is introduced by, for example, oxidizing a carbon-carbon double bond in the molecule can be mentioned. In addition, an epoxy resin having a biphenyl skeleton, a triphenylmethane skeleton, a dicyclohexadiene skeleton, a naphthalene skeleton, or the like can also be used. These epoxy resins may be used alone or in combination of two or more. Among the above-mentioned epoxy resins, glycidyl ether of bisphenol A (bisphenol A type epoxy resin), epoxy resin having a biphenyl skeleton (biphenyl type epoxy resin), epoxy resin having a naphthalene skeleton (naphthalene type epoxy resin), or a combination thereof can be used. It is preferable to use it.

Examples of the phenol resin include bisphenol A, tetramethylbisphenol A, diallyl bisphenol A, biphenol, bisphenol F, diallyl bisphenol F, triphenylmethane type phenol, tetrakisphenol, novolak type phenol, cresol novolac resin, and biphenyl aralkyl skeleton. Examples thereof include phenol (biphenyl-type phenol) having, and among these, it is preferable to use biphenyl-type phenol. These phenol resins can be used alone or in combination of two or more. When an epoxy resin is used as the curable resin, it is preferable to use a phenol resin in combination from the viewpoint of reactivity with the epoxy resin and the like.

The content of the thermosetting resin in the resin composition is preferably 10% by mass or more, particularly preferably 15% by mass or more, and further preferably 20% by mass or more. The content is preferably 60% by mass or less, particularly preferably 50% by mass or less, and further preferably 40% by mass or less. When the content is 10% by mass or more, the resin composition layer 11 is more sufficiently cured, and the electronic component can be sealed more firmly. Further, when the content is 60% by mass or less, the curing of the resin composition layer 11 at an unintended stage can be further suppressed, and the storage stability becomes more excellent. The content of the thermosetting resin is a solid content conversion value.

(2) Thermoplastic Resin The resin composition may contain a thermoplastic resin. When the resin composition contains a thermoplastic resin, it becomes easy to form the resin composition layer in the form of a sheet, and the handleability is improved. Further, the low stress property of the cured layer obtained by curing the resin composition layer can be effectively obtained. Therefore, the thermoplastic resin is not particularly limited as long as it enables the resin composition layer to be formed in a sheet shape, and for example, a resin usually contained in a sealing material can be used. .. Examples of thermoplastic resins include phenoxy resins, olefin resins, polyester resins, polyurethane resins, polyester urethane resins, acrylic resins, amide resins, styrene-isobutylene-styrene copolymers (SIS), and the like. Examples thereof include styrene resin, silane resin, rubber resin, polyvinyl acetal resin, polyvinyl butyral resin, polyimide resin, polyamide imide resin, polyether sulfone resin, polysulfone resin, fluorine resin, etc. One type can be used alone, or two or more types can be used in combination. From the viewpoint of electrode forming property, it is preferable to use at least one selected from the group consisting of a phenoxy resin, a polyvinyl acetal resin, and a polyvinyl butyral resin as the thermoplastic resin.

The phenoxy resin is not particularly limited, but for example, bisphenol A type, bisphenol F type, bisphenol A / bisphenol F copolymer type, bisphenol S type, bisphenol acetophenone type, novolak type, fluorene type, dicyclopentadiene type, norbornene. Examples thereof include type, naphthalene type, anthracene type, adamantan type, terpen type, trimethylcyclohexane type, biphenol type, and biphenyl type phenoxy resin, and among these, bisphenol A type phenoxy resin is preferably used. The terminal of the phenoxy resin may be any functional group such as a phenolic hydroxyl group or an epoxy group. One type of phenoxy resin may be used alone, or two or more types may be used in combination.

The content of the thermoplastic resin in the resin composition is preferably 1% by mass or more, particularly preferably 3% by mass or more, and further preferably 5% by mass or more. The content is preferably 30% by mass or less, particularly preferably 20% by mass or less, and further preferably 10% by mass or less. When the content is in the above range, it becomes easier to form the resin composition layer in the form of a sheet. The content of the thermoplastic resin is a solid content conversion value.

(3) Inorganic filler The resin composition may contain an inorganic filler. When the resin composition contains an inorganic filler, the cured layer obtained by curing the resin composition layer has excellent mechanical strength, and the coefficient of thermal expansion can be suppressed to a low level. The reliability of semiconductor devices is improved. Examples of such inorganic fillers include silica, alumina, glass, titanium oxide, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, and aluminum nitride. , Aluminum oxide whisker, boron nitride, crystalline silica, amorphous silica, mulite, cordierite and other composite oxides, montmorillonite, smectite, boehmite, talc, iron oxide, silicon carbide, zirconium oxide and other fillers. Can be exemplified, and these can be used alone or in combination of two or more. Among these, it is preferable to use a silica filler and an alumina filler, and it is particularly preferable to use a silica filler.

The inorganic filler is preferably surface-treated with a surface treatment agent having a predetermined minimum coating area. As a result, the dispersibility and filling property of the inorganic filler in the resin composition become excellent, and the effects described later can be obtained depending on the surface treatment agent used.

From the viewpoint of suppressing swelling of the plating when plating is formed on the surface of the cured layer obtained by curing the resin composition layer, the surface treatment having a minimum coating area of less than ^{550 m 2 / g as the surface treatment agent.} It is preferable to use an agent.

The inorganic filler surface-treated with a surface treatment agent having a minimum coating area of ^{less than 550 m 2} / g has a relatively high affinity with the alkaline treatment solution used in the desmear process, and the cured layer is exposed to the treatment solution. At that time, the inorganic filler is easily detached from the cured layer. Therefore, when the metal is plated in the electrode forming step following the desmear step, the metal invades the portion of the hardened layer from which the inorganic filler has been removed, an anchor effect is exhibited, and the plating is applied to the hardened layer. It will be firmly adhered. As a result, it becomes difficult for air to enter the interface between the cured layer and the plating, and even if heat is generated during the subsequent manufacturing process or use of the obtained semiconductor device, the air expands and the plating swells. Is suppressed.

From the viewpoint of more effectively suppressing the occurrence of swelling of the plating, the minimum coating area of the surface treatment agent ^{is preferably 520 m 2} / g or less, and particularly preferably 450 m ² / g or less. On the other hand, the lower limit of the minimum coating area of the surface treatment agent ^{is preferably 100 m 2} / g or more, particularly preferably 200 m ² / g or more, and further preferably 300 m ² / g or more. .. When the minimum coating area is 100 m ² / g or more, the dispersibility and filling property of the inorganic filler in the resin composition become more excellent.

The minimum coating area (m ^{2 / g) of the surface treatment agent refers to the area (m 2} ) of the monomolecular film when a monomolecular film is formed using 1 g of the surface treatment agent. The minimum coating area can be theoretically calculated from the structure of the surface treatment agent, and for example, when considering a surface treatment agent having a trialkoxysilane group as a reactive group, the trialkoxysilane group is hydrolyzed. The resulting Si (O) ₃ structure is a tetrahedron with one Si atom and three O atoms as vertices, respectively. Here, the Si atom is a sphere with a radius of 2.10 Å, the O atom is a sphere with a radius of 1.52 Å, the distance of the Si—O bond is 1.51 Å, and the sides of the two Si—O bonds form. Assume that the angle is 109.5 °. Then, assuming that all three O atoms in the tetrahedron react with the hydroxy groups on the surface of the inorganic filler, the minimum circular area that can be covered by the three O atoms is calculated to be 1 per molecule of the surface treatment agent. It becomes .33 × ^10-19 m ² / molecule. This is converted to 8.01 × 10 ⁴ m ² / mol per mole, and the area per mole is divided by the molecular weight of the surface treatment agent to obtain the minimum coating area (m ^{2) of the surface treatment agent.} / G) can be obtained.

Preferable examples of surface treatment agents having a minimum coating area of ^{less than 550 m 2 / g include epoxysilane and vinylsilane.} These may be used alone or in combination.

Specific examples of the epoxy silane include 3-glycidoxypropyltriethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, and 3-glycidoxypropylmethyldiethoxysilane. , 2- (3,4 epylcyclohexyl) ethyltrimethoxysilane and the like. Among these, 3-glycidoxypropyltrimethoxysilane is preferably used from the viewpoint of effectively promoting the elimination of the inorganic filler.

Specific examples of the vinylsilane include vinyltriacetoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltricrolsilane, vinyltris (2-methoxyethoxy) silane and the like. Among these, vinyl trimethoxysilane is preferably used from the viewpoint of effectively promoting the desorption of the inorganic filler.

The shape of the inorganic filler may be granular, needle-shaped, plate-shaped, amorphous, etc., but when the inorganic filler surface-treated with the above-mentioned surface treatment agent is used, the surface treatment is effective. It is preferably spherical in that it can be carried out in a spherical manner.

The average particle size of the inorganic filler is preferably 0.01 μm or more, particularly preferably 0.1 μm or more, and further preferably 0.3 μm or more. The average particle size of the inorganic filler is preferably 3.0 μm or less, and particularly preferably 1.0 μm or less. When the average particle size of the inorganic filler is 0.01 μm or more, when the inorganic filler surface-treated with the above-mentioned surface treatment agent is used, the surface area becomes easy to be surface-treated by the surface treatment agent, which is effective. Surface treatment becomes possible. On the other hand, when the average particle size of the inorganic filler is 3.0 μm or less, the inorganic filler is satisfactorily filled in the cured layer, and the cured layer has better mechanical strength. In particular, when a material that has been surface-treated with the above-mentioned surface treatment agent is used as the inorganic filler, the surface area of the inorganic filler that is easily surface-treated by the surface treatment agent is such that the average particle size is 3.0 μm or less. It becomes possible to effectively perform surface treatment. The average particle size of the inorganic filler in the present specification is a value measured by a dynamic light scattering method using a particle size distribution measuring device (manufactured by Nikkiso Co., Ltd., product name "Nanotrack Wave-UT151").

The maximum particle size of the inorganic filler is preferably 0.05 μm or more, and particularly preferably 0.5 μm or more. The maximum particle size is preferably 5 μm or less, and particularly preferably 3 μm or less. When the maximum particle size of the inorganic filler is in the above range, it becomes easy to fill the cured layer with the inorganic filler, and the cured layer has more excellent mechanical strength. The maximum particle size of the inorganic filler in the present specification is a value measured by a dynamic light scattering method using a particle size distribution measuring device (manufactured by Nikkiso Co., Ltd., product name "Nanotrack Wave-UT151").

The content of the inorganic filler in the resin composition is preferably 40% by mass or more, and particularly preferably 50% by mass or more. When the content is 40% by mass or more, it becomes easy to achieve both the mechanical strength of the cured layer and the effect of surface treatment with a surface treatment agent. The content of the inorganic filler in the resin composition is preferably 90% by mass or less, particularly preferably 85% by mass or less, and further preferably 80% by mass or less. When the content of the inorganic filler is 90% by mass or less, the resin composition layer has better mechanical strength. The content of the inorganic filler is a solid content conversion value.

(4) Curing catalyst The resin composition preferably further contains a curing catalyst. As a result, the curing reaction of the thermosetting resin can be effectively promoted, and the resin composition layer can be satisfactorily cured. Examples of the curing catalyst include an imidazole-based curing catalyst, an amine-based curing catalyst, and a phosphorus-based curing catalyst.

Specific examples of the imidazole-based curing catalyst include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 2-ethyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 2-phenylimidazole, 2-Phenyl-4-methylimidazole, 1-benzyl-2-phenylimidazole, 1,2-dimethylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl Reactions include -2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2-phenyl-4,5-di (hydroxymethyl) imidazole and the like. From the viewpoint of sex, it is preferable to use 2-ethyl-4-methylimidazole.

Specific examples of the amine-based curing catalyst include triazine compounds such as 2,4-diamino-6- [2'-methylimidazolyl- (1')] ethyl-s-triazine, and 1,8-diazabicyclo [5,4. 0] Examples thereof include tertiary amine compounds such as undecene-7 (DBU), triethylenediamine, benzyldimethylamine, and triethanolamine. Of these, 2,4-diamino-6- [2'-methylimidazolyl- (1')] ethyl-s-triazine is preferable.

Specific examples of the phosphorus-based curing catalyst include triphenylphosphine, tributylphosphine, tri (p-methylphenyl) phosphine, and tri (nonylphenyl) phosphine.

The above-mentioned curing catalyst may be used alone or in combination of two or more.

The content of the curing catalyst in the resin composition is preferably 0.01% by mass or more, particularly preferably 0.05% by mass or more, and further preferably 0.1% by mass or more. preferable. The content is preferably 2.0% by mass or less, particularly preferably 1.5% by mass or less, and further preferably 1.0% by mass or less. When the content is in the above range, the resin composition layer can be cured more satisfactorily. The content of the curing catalyst is a solid content conversion value.

(5) Other Components The resin composition may further contain a plasticizer, a stabilizer, a tackifier, a colorant, a coupling agent, an antistatic agent, an antioxidant and the like.

(6) Thickness of Resin Composition Layer The thickness of the first resin composition layer in the first sealing sheet is determined by the intended use of sealing, the thickness of the cured resin composition layer after sealing, and the like. It can be set in consideration and is not particularly limited. The thickness of the first resin composition layer in the first sealing sheet is preferably 50 μm or more, particularly preferably 60 μm or more, and further preferably 70 μm or more. The thickness of the first resin composition layer is preferably 1000 μm or less, more preferably 500 μm or less, particularly preferably 300 μm or less, and further preferably 200 μm or less. When the thickness of the first resin composition layer is 50 μm or more, the electronic components are satisfactorily embedded in the first resin composition layer and the first resin composition layer is cured in the first laminating step. The effect of protecting the electronic component can be satisfactorily obtained by the first cured layer made of the resin. Further, when the thickness of the first resin composition layer is 1000 μm or less, it is possible to reduce the occurrence of curing shrinkage of the first cured layer formed by curing the first resin composition layer, and it is possible to reduce the occurrence of curing shrinkage of the sealed body. The occurrence of warpage can be suppressed.

The thickness of the second resin composition layer in the second sealing sheet is preferably 1 μm or more, particularly preferably 5 μm or more, and further preferably 10 μm or more. The thickness of the second resin composition layer is preferably 100 μm or less, more preferably 80 μm or less, and particularly preferably 60 μm. When the thickness of the second resin composition layer is 1 μm or more, the effect of protecting the electronic components by the second cured layer obtained by curing the second resin composition layer can be satisfactorily obtained. , Good insulation can be obtained. Further, when the thickness of the second resin composition layer is 100 μm or less, the occurrence of curing shrinkage of the second cured layer formed by curing the second resin composition layer can be reduced, thereby sealing. It is possible to suppress the occurrence of warpage of the stationary body.

2. Release sheet The sealing sheet may include a release sheet. By providing the release sheet, the handling of the sealing sheet at the time of storage and in the first laminating step and the second laminating step becomes excellent. The composition of the release sheet is arbitrary, and examples thereof include polyester films such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate, and plastic films such as polyolefin films such as polypropylene and polyethylene. It is preferable that these peeled surfaces are subjected to a peeling treatment. Examples of the release agent used in the release treatment include silicone-based, alkyd-based, fluorine-based, and long-chain alkyl-based release agents.

The thickness of the release sheet is not particularly limited, but is usually 20 μm or more and 250 μm or less.

3. 3. Physical Properties of Encapsulating Sheet In the encapsulating sheet, the material constituting the resin composition layer has an upper limit of the melt viscosity at 90 ° C. (hereinafter, may be referred to as “90 ° C. melt viscosity”) before curing. It is preferably 1.0 × 10 ⁵ Pa · s or less, and particularly preferably 1.0 × 10 ⁴ Pa · s or less. When the upper limit of the melt viscosity at 90 ° C. is the above, the electronic component is satisfactorily embedded in the first resin composition layer under heating in the first laminating step, whereby voids are generated around the electrical component. It can be effectively suppressed. The melt viscosity at 90 ° C. is preferably 1.0 Pa · s or more as a lower limit value, and particularly preferably 10 Pa · s or more. When the lower limit of the melt viscosity at 90 ° C. is the above, the material constituting the resin composition layer does not flow too much when the resin composition layer is laminated on the electronic component under heating in the first laminating step. , Equipment contamination and chip shift can be prevented.

Here, the 90 ° C. melt viscosity of the material constituting the resin composition layer can be measured using a viscoelasticity measuring device. Specifically, the melt viscosity of the resin composition layer 13 having a thickness of 15 mm can be measured using MCR302 (manufactured by Antonio par) under the conditions of a temperature range of 30 to 150 ° C. and a heating rate of 5 ° C./min. can.

4. Manufacturing Method of Encapsulating Sheet The encapsulating sheet used in the manufacturing method of the semiconductor device according to the present embodiment can be produced in the same manner as the conventional encapsulating sheet. For example, a coating liquid containing the above-mentioned resin composition and, if desired, a solvent or a dispersion medium is prepared, and a die coater, a curtain coater, a spray coater, a slit coater, a knife coater, or the like is used on the peeling surface of the release sheet. A sealing sheet can be produced by applying the coating liquid to form a coating film and drying the coating film. The properties of the coating liquid are not particularly limited as long as it can be applied, and the coating liquid may contain a component for forming a resin composition layer as a solute or a dispersoid. .. The release sheet may be peeled off as a process material, or the resin composition layer may be protected until it is used for sealing.

Further, as a method for manufacturing a laminate in which release sheets are laminated on both sides of the sealing sheet, a coating liquid is applied on the release surface of the release sheet to form a coating film, which is dried. A laminate composed of a resin composition layer and a release sheet is formed, and the surface of the resin composition layer of this laminate opposite to the release sheet is attached to the release surface of another release sheet to form a release sheet / resin composition. A laminate composed of a material layer / release sheet can be obtained. At least one of the release sheets in this laminate may be peeled off as a process material, or the resin composition layer may be protected until it is used for sealing. Examples of the solvent include organic solvents such as toluene, ethyl acetate, and methyl ethyl ketone.

[Manufacturing method of semiconductor devices]
Subsequently, a method of manufacturing the semiconductor device according to the present embodiment will be described. 1 to 4 are cross-sectional views illustrating an example of a method for manufacturing a semiconductor device according to the present embodiment. First, as shown in FIG. 1A, as an electronic component mounting step, one or more electronic components 2 are mounted on the adhesive surface of the pressure-sensitive adhesive sheet 1. The method of placing the electronic component 2 on the adhesive sheet 1 is not particularly limited, and a general method can be adopted.

The adhesive sheet 1 is not particularly limited as long as the electronic component 2 can be fixed (removably fixed) on the sheet by the adhesive force exerted by the sheet, and is laminated on the base material and the base material. It may be composed of a pressure-sensitive adhesive layer, or may be a base material having self-adhesiveness. Further, such a base material and the pressure-sensitive adhesive layer preferably have heat resistance that can withstand heating when the first resin composition layer and the second resin composition layer are thermoset.

As an example of the adhesive constituting the adhesive layer, an acrylic adhesive, a rubber adhesive, a silicone adhesive, a urethane adhesive, a polyester adhesive, a polyvinyl ether adhesive, or the like can be used. .. The pressure-sensitive adhesive may contain a plasticizer, a stabilizer, a tackifier, a colorant, a coupling agent, an antistatic agent, an antioxidant and the like.

The material of the base material constituting the pressure-sensitive adhesive sheet 1 is not particularly limited, and for example, a polyester film such as a polyethylene terephthalate film, a polybutylene terephthalate film, and a polyethylene naphthalate film; a polyolefin film such as a polyethylene film and a polypropylene film; Examples include non-woven fabrics and papers.

If the adhesive sheet 1 is composed of a substrate and a pressure-sensitive adhesive layer, the adhesive layer is preferably at 100 ° C., the storage modulus when the measurement frequency was 1Hz is 1 × 10 5 ^Pa or more. If the pressure-sensitive adhesive layer has such a storage elastic modulus, the pressure-sensitive adhesive sheet 1 can be easily peeled off after the curing step, and the pressure-sensitive adhesive remains on the surface of the adherend (so-called glue). The rest) can be prevented. At 100 ° C. of the adhesive layer, the upper limit of the storage modulus when measured frequency is 1Hz is not particularly limited, is preferably at most 1 × 10 7 ^Pa. The storage elastic modulus is a value measured by a torsional shear method using a dynamic viscoelasticity measuring device, and the details of the measuring method are as described in Examples described later.

The pressure-sensitive adhesive sheet 1 preferably exhibits the following adhesive strength after heating. First, the adhesive surface of the adhesive sheet 1 is attached to an adherend (copper foil or polyimide film), heated under the conditions of 100 ° C. and 30 minutes, then heated at 180 ° C. and 30 minutes, and further 190. After heating at ° C. and 1 hour, the adhesive strength of the copper foil at room temperature and the adhesive strength of the polyimide film at room temperature are preferably 0.7 N / 25 mm or more and 2.0 N / 25 mm or less, respectively. .. If the adhesive strength after such heating is within the above range, it is possible to effectively prevent the adhesive sheet 1 from peeling off during the curing step. Further, when the first resin composition layer, which will be described later, is cured at a stage between the first laminating step and the peeling step of the pressure-sensitive adhesive sheet 1, even if the pressure-sensitive adhesive sheet 1 is heated, the pressure-sensitive adhesive sheet 1 is provided. Easy to peel off. The details of the method for measuring the adhesive strength will be as described in Examples described later. Further, in the present specification, the room temperature means a temperature of 22 ° C. or higher and 24 ° C. or lower.

When the pressure-sensitive adhesive sheet 1 is composed of a base material and a pressure-sensitive adhesive layer, the pressure-sensitive adhesive layer effectively suppresses adhesive residue due to deterioration of the pressure-sensitive adhesive layer when the pressure-sensitive adhesive sheet 1 is peeled off after being heated. From the viewpoint of the above, the 5% weight loss temperature is preferably 250 ° C. or higher, and more preferably 300 ° C. or higher. This 5% weight loss temperature can be adjusted, for example, by increasing the degree of cross-linking of the pressure-sensitive adhesive used in the pressure-sensitive adhesive layer, reducing the content of small molecules in the pressure-sensitive adhesive, and the like. The details of the method for measuring the 5% weight loss temperature are as described in Examples described later.

The thickness of the base material constituting the pressure-sensitive adhesive sheet 1 can be appropriately set from the viewpoint of workability, cost, and the like. For example, it is preferably 10 μm or more, particularly preferably 15 μm or more, and further. Is preferably 20 μm or more. The thickness of the base material is preferably 500 μm or less, particularly preferably 300 μm or less, and further preferably 100 μm or less.

When the pressure-sensitive adhesive sheet 1 is composed of a base material and a pressure-sensitive adhesive layer, the thickness of the pressure-sensitive adhesive layer can be appropriately set from the viewpoints of adhesive strength, workability, cost, etc., and is, for example, 1 μm or more. It is preferably 5 μm or more, and more preferably 10 μm or more. The thickness of the pressure-sensitive adhesive layer is preferably 500 μm or less, particularly preferably 100 μm or less, and further preferably 50 μm or less.

The electronic component 2 is not particularly limited as long as it is an electronic component to be sealed in general, and examples thereof include a semiconductor chip. Further, the electronic component 2 may have a semiconductor chip mounted at a predetermined position on the interposer. In this case, in such a mounted state, at least a part of the interposer is sealed together with the semiconductor chip and the like. Examples of the interposer include a lead frame, a polyimide tape, a printed circuit board, and the like. Further, a frame made of a metal such as copper, a frame such as a resin frame (also referred to as a frame-shaped member) is provided around the electronic component 2 on the adhesive sheet 1, and together with the electronic component 2, at least the frame-shaped member is provided. A part may be sealed. The frame-shaped member usually includes one or more openings made of holes penetrating in the thickness direction, and a frame-shaped part made of copper or the like or resin.

When the frame-shaped member is used, in the electronic component mounting step, for example, after the frame-shaped member is mounted on the adhesive surface of the adhesive sheet 1, the electronic component 2 is placed at the position of the opening of the frame-shaped member. Is placed. As a result, in the first laminating step, it is possible to suppress the seepage of the sealing resin to the outside of the opening, make the thickness of the obtained semiconductor device uniform, and further suppress the occurrence of warpage of the cured layer. However, the warp of the obtained semiconductor device can be suppressed.

Subsequently, as shown in FIG. 1B, as the first laminating step, the first sealing sheet in the first sealing sheet including at least a curable first resin composition layer 3 so as to cover the electronic component 2. The resin composition layer 3 of 1 is laminated. As the first sealing sheet, the above-mentioned sealing sheet can be used. When the first sealing sheet includes a release sheet on only one side, the exposed surfaces of the resin composition layer in the first sealing sheet are laminated so as to cover the electronic component 2, and then the release sheet is attached to the first release sheet. It is preferable to peel off from the resin composition layer 3 of. When the first sealing sheet is provided with release sheets on both sides, the exposed surfaces of the resin composition layer exposed by peeling one release sheet are laminated so as to cover the electronic component 2, and then the other. It is preferable to peel off the release sheet of the above from the first resin composition layer 3. When the first sealing sheet is provided with a release sheet on one side or both sides, the exposed surface of the resin composition layer 3 in the first sealing sheet is laminated so as to cover the electronic component 2, and then described later. As such, the first resin composition layer 3 may be cured to form the first cured layer 3', and then the release sheet may be peeled from the first cured layer 3'.

The first laminating step can be performed using a conventionally known laminating apparatus, and as the laminating conditions, for example, the temperature of the first resin composition layer 3 is preferably 40 ° C. or higher, particularly 50. It is preferably ° C or higher. Further, the temperature is preferably 180 ° C. or lower, more preferably 150 ° C. or lower, and particularly preferably 120 ° C. or lower. The stacking pressure is preferably 0.1 MPa or more. The pressure is preferably 0.5 MPa or less. The time required for laminating is preferably 10 seconds or longer, and particularly preferably 30 seconds or longer. The time is preferably 10 minutes or less, and particularly preferably 5 minutes or less.

The first laminating step may be performed under normal pressure conditions, but is preferably performed under reduced pressure conditions from the viewpoint of adhesion and embedding property of the first resin composition layer 3 to the electronic component 2. The depressurization condition is, for example, preferably 5 kPa or less, more preferably 500 Pa or less, and particularly preferably 100 Pa or less.

Next, as shown in FIG. 1 (c), it is preferable to cure the first resin composition layer 3 to form the first cured layer 3'. The curing is preferably performed by heat treatment, that is, it is preferably cured by heating the first resin composition layer 3. The reaction rate of the first cured layer 3'after the curing is completed is preferably 85% or more, preferably 90% or more, and particularly preferably 95% or more. When the first resin composition layer 3 is cured so that the reaction rate of the first cured layer 3'is 85% or more, the curing reaction of the first resin composition layer 3 proceeds more satisfactorily. Since the three-dimensional network is appropriately formed, the surface of the first hardened layer 3'is not excessively roughened after the desmear step described later, and the arithmetic mean roughness of the surface of the first hardened layer 3'is relatively small. .. As a result, it becomes difficult for a conductor to be formed inside the first cured layer 3'in the subsequent electrode forming step, so that even when a fine electrode is formed, insulation defects such as short circuits can be effectively suppressed. The method for measuring the reaction rate is as described in Test Examples described later.

The arithmetic mean roughness (Ra value) of the surface of the first hardened layer 3'formed on the side opposite to the electronic component 2 is preferably 300 nm or less from the viewpoint of easily forming fine electrodes. , 150 nm or less, particularly preferably 100 nm or less, and further preferably 50 nm or less. The lower limit of the arithmetic mean roughness (Ra value) is not particularly limited, but is preferably 1 nm or more, particularly 5 nm, from the viewpoint of further stabilizing the adhesion of the electrode 7 after the electrode forming step described later. It is preferably more than that, and more preferably 10 nm or more. The method for measuring the arithmetic mean roughness (Ra value) is as described in a test example described later.

In the curing of the first resin composition layer 3 by heating described above, the temperature of the heat treatment is preferably, for example, 100 ° C. or higher, and particularly preferably 120 ° C. or higher. The temperature is preferably 240 ° C. or lower, and particularly preferably 200 ° C. or lower. The heat treatment time is preferably 15 minutes or longer, and particularly preferably 20 minutes or longer. The time is preferably 300 minutes or less, and particularly preferably 100 minutes or less. Further, it is preferable that the curing of the first resin composition layer 3 by the above-mentioned heating is carried out stepwise by a plurality of heat treatments. This makes it easier for the reaction rate in the first cured layer 3'to achieve a desired value. In this case, the heating is preferably performed in two or more times, and in particular, a first heat treatment for thermosetting at a temperature T1 and a second heat treatment for thermosetting at a temperature T2 higher than the temperature T1. More preferably, it is carried out by a two-step heating treatment according to the above. In this case, in the first heat treatment, the temperature T1 is preferably 100 ° C. or higher and 130 ° C. or lower, and the heat treatment time is preferably 15 minutes or longer and 60 minutes or lower. Further, in the second heat treatment, the temperature T2 is preferably 150 ° C. or higher and 220 ° C. or lower, and the heat treatment time is preferably 30 minutes or longer and 120 minutes or lower.

In the example of the method for manufacturing the semiconductor device shown in FIGS. 1 to 4, the first resin composition layer 3 is cured at a stage between the first laminating step and the peeling step, but other than that. It may be done at the stage of. For example, the curing of the first resin composition layer 3 may be performed after the pressure-sensitive adhesive sheet 1 is peeled off and before the second sealing sheet is laminated. Further, the curing of the first resin composition layer 3 is performed at the same time as the curing of the second resin composition layer after the pressure-sensitive adhesive sheet 1 is peeled off and the lamination of the second sealing sheet is completed. You may.

Subsequently, as shown in FIG. 2A, the adhesive sheet 1 is peeled from the electronic component 2 and the first cured layer 3'as a peeling step. If the first resin composition layer 3 is not cured at the time of the peeling, the pressure-sensitive adhesive sheet 1 is peeled off from the electronic component 2 and the first resin composition layer 3. Become. When the pressure-sensitive adhesive sheet 1 is provided with an energy ray-curable pressure-sensitive adhesive layer, the pressure-sensitive adhesive sheet 1 is cured by irradiating the pressure-sensitive adhesive layer with energy rays before peeling, as described above. By reducing the adhesive strength of the material, the peeling can be easily performed.

Next, as shown in FIG. 2B, as a second laminating step, at least a curable second resin composition layer is provided so as to cover the exposed surface of the electronic component 2 exposed by the peeling of the adhesive sheet 1. A second sealing sheet comprising 4 is laminated. As the second sealing sheet, the above-mentioned sealing sheet can be used. In particular, as the second sealing sheet, it is preferable to use a sealing sheet in which the second resin composition layer 4 is made of the same material as the first resin composition layer 3. That is, in the method for manufacturing a semiconductor device according to the present embodiment, the first resin composition layer 3 and the second resin composition layer 4 are the first resin composition layer 3 and the second resin composition layer 4. From the viewpoint of adhesion between the two, it is preferable that the resin compositions have the same composition. When the second sealing sheet includes a release sheet on only one side, the exposed surface of the resin composition layer in the second sealing sheet is laminated so as to cover the exposed surface of the electronic component 2, and then the release sheet is attached. It is preferable to peel off from the second resin composition layer 4. When the second sealing sheet is provided with release sheets on both sides, the exposed surface of the resin composition layer exposed by peeling one of the release sheets is laminated so as to cover the exposed surface of the electronic component 2. It is preferable to peel off the other release sheet from the second resin composition layer 4. When the second sealing sheet includes a release sheet, the exposed surface of the resin composition layer 4 in the second sealing sheet is laminated so as to cover the exposed surface of the electronic component 2, and then described later. As described above, after the second resin composition layer 4 is cured to form the second cured layer 4', the release sheet may be peeled from the second cured layer 4'.

The second laminating step can be performed using a conventionally known laminating apparatus, and as the laminating conditions, for example, the temperature of the second resin composition layer 4 is preferably 40 ° C. or higher, particularly 50. It is preferably ° C or higher. Further, the temperature is preferably 180 ° C. or lower, more preferably 150 ° C. or lower, and particularly preferably 120 ° C. or lower. The stacking pressure is preferably 0.1 MPa or more. The pressure is preferably 0.5 MPa or less. The time required for laminating is preferably 10 seconds or longer, and particularly preferably 30 seconds or longer. The time is preferably 10 minutes or less, and particularly preferably 5 minutes or less.

The second laminating step may be performed under normal pressure conditions, but is preferably performed under reduced pressure conditions from the viewpoint of adhesion and embedding property of the second resin composition layer 4 to the electronic component 2. The depressurization condition is, for example, preferably 5 kPa or less, and particularly preferably 100 Pa or less. The depressurization condition is preferably 0.1 Pa or more, and particularly preferably 0.1 kPa or more.

Next, as shown in FIG. 2C, as a curing step, the second resin composition layer 4 is cured to form a second cured layer 4', whereby the first resin composition is formed. A first cured layer 3'in which the material layer 3 is cured, a second cured layer 4'in which the second resin composition layer 4 is cured, a first cured layer 3'and a second A sealed body 5 including the electronic component 2 sealed by the cured layer 4'is obtained. The curing of the second resin composition layer 4 is preferably thermosetting, that is, it is preferably cured by heating the second adhesive layer 4. The reaction rate of the second cured layer 4'after the curing is completed is preferably 85% or more, particularly preferably 90% or more, and further preferably 95% or more. When the second resin composition layer 4 is cured so that the reaction rate of the second cured layer 4'is 85% or more, the curing reaction of the second resin composition layer 4 proceeds more satisfactorily. Since the surface is appropriately three-dimensionally networked, the surface of the second hardened layer 4'is not excessively roughened after the desmear step described later, and the arithmetic mean roughness of the surface of the second hardened layer 4'is relatively small. .. As a result, it becomes difficult for a conductor to be formed inside the second hardened layer 4'in the subsequent electrode forming step, so that even when a fine electrode is formed, insulation defects such as short circuits can be effectively suppressed. The method for measuring the reaction rate is as described in Test Examples described later.

The arithmetic mean roughness (Ra value) of the surface of the second hardened layer 4'formed on the side opposite to the electronic component 2 is preferably 300 nm or less from the viewpoint of easily forming fine electrodes. , 150 nm or less, particularly preferably 100 nm or less, and further preferably 50 nm or less. The lower limit of the arithmetic mean roughness (Ra value) is not particularly limited, but is preferably 1 nm or more, particularly 5 nm, from the viewpoint of further stabilizing the adhesion of the electrode 7 after the electrode forming step described later. It is preferably more than that, and more preferably 10 nm or more. The method for measuring the arithmetic mean roughness (Ra value) is as described in a test example described later.

In the curing of the second resin composition layer 4 by the above-mentioned heating, the temperature of the heat treatment is preferably, for example, 100 ° C. or higher, and particularly preferably 120 ° C. or higher. The temperature is preferably 240 ° C. or lower, and particularly preferably 200 ° C. or lower. The heat treatment time is preferably 15 minutes or longer, and particularly preferably 20 minutes or longer. The time is preferably 300 minutes or less, and particularly preferably 100 minutes or less. Further, it is preferable that the curing of the second resin composition layer 4 by the above-mentioned heating is carried out stepwise by a plurality of heat treatments. This makes it easier for the reaction rate in the second cured layer 4'to achieve a desired value. In this case, the heating is preferably performed in two or more times, particularly by a first heat treatment for thermosetting at a temperature T1 and a second heat treatment for thermosetting at a temperature T2 higher than the temperature T1. More preferably, it is carried out by a two-step heating treatment. In the first heat treatment, the temperature T1 is preferably 100 ° C. or higher and 130 ° C. or lower, and the heat treatment time is preferably 15 minutes or longer and 60 minutes or lower. In the second heat treatment, the temperature T2 is preferably 150 ° C. or higher and 220 ° C. or lower, and the heat treatment time is preferably 30 minutes or longer and 120 minutes or lower.

Next, electrodes can be formed on at least one of the first cured layer and the second cured layer by any conventionally known method. In the following, an example of forming by the semi-additive method will be described.

That is, following the curing step, as a hole forming step, the holes 6 penetrating at least one of the first cured layer 3'and the second cured layer 4'expose a part of the surface of the electronic component 2. Form a hole to allow. The holes 6 can be formed on one desired side of the first cured layer 3'and the second cured layer 4', depending on the configuration of the obtained semiconductor device or the like, and the first cured layer 3 can be formed. It can also be provided on both sides of the'and the second hardened layer 4'. Here, FIG. 3A shows a cross-sectional view of a state in which a hole 6 penetrating the second hardened layer 4'is formed. In this case, a hole 6 is formed in the second hardened layer 4'that penetrates from the surface opposite to the first hardened layer 3'to the interface between the second hardened layer 4'and the electronic component 2. On the other hand, FIG. 4A shows a cross-sectional view of a state in which a hole 6 penetrating the first cured layer 3'is formed. In this case, a hole 6 is formed in the first hardened layer 3'from the surface opposite to the second hardened layer 4'to the interface between the first hardened layer 3'and the electronic component 2. The hole 6 may be formed by a general method. For example, the hole 6 is formed by irradiating the surface on which the hole 6 is formed with a laser under general irradiation conditions using a laser irradiation device. be able to.

Next, as a desmear step, the sealing body 5 in which the holes 6 are formed is desmear-treated. In the hole forming step described above, when the holes 6 are formed, a residue (smear) of the components constituting the first hardened layer 3'or the second hardened layer 4'is generated, and the smears are formed in the holes 6. May remain. However, by performing the desmear step, smear in the hole 6 can be removed, and when an electrode is formed in the hole 6 in the subsequent electrode forming step, poor continuity of the electrode can be suppressed.

The above-mentioned desmear treatment can be performed by a general method, for example, by immersing the sealant 5 in an alkaline solution having a temperature of 30 ° C. or higher and 120 ° C. or lower for 1 to 30 minutes. Further, as the alkaline solution to be used, a solution generally used for desmear treatment (desmear solution) can be used, for example, a sodium hydroxide solution containing potassium permanganate, sodium permanganate and the like. An aqueous solution containing sodium hydroxide or the like can be used. Further, as the alkaline solution, an aqueous solution containing potassium hydroxide or the like can be used in addition to the aqueous solution containing sodium permanganate and sodium hydroxide.

Finally, as an electrode forming step, an electrode 7 electrically connected to the electronic component 2 through the hole 6 is formed. Here, FIG. 3B shows a cross-sectional view of a state in which the electrode 7 is formed in the hole 6 formed in the second hardened layer 4'in the hole forming step. Further, FIG. 4B shows a cross-sectional view of a state in which the electrode 7 is formed in the hole 6 formed in the first cured layer 3'in the hole forming step. The electrode 7 can be formed by a general method. For example, the surface of the sealing body 5 on which the holes 6 are formed is plated with a conductive metal such as copper or silver, the conductive metal is embedded in the holes 6, and the surface is covered with the above-mentioned surface. Cover with conductive metal. Subsequently, an unnecessary portion of the conductive metal covering the surface was removed by etching or the like, and the conductive metal embedded in the hole 6 was connected to the embedded conductive metal and remained on the surface. An electrode 7 made of a conductive metal having a predetermined shape can be formed. Here, the electrode 7 in the form of wiring can also be formed by forming the conductive metal remaining on the surface into a linear shape having a predetermined width and length. By forming the electrode 7, a semiconductor device including the sealed electronic component 2 and the electrode 7 electrically connected to the electronic component 2 can be obtained.

In the method for manufacturing a semiconductor device according to the present embodiment, as described above, holes 6 are formed in desired layers of the first hardened layer 3'and the second hardened layer 4'according to the use of the semiconductor device and the like. , Electrode 7 can be provided. Further, the holes 6 may be formed in both the first cured layer 3'and the second cured layer 4', and the electrodes 7 may be provided. Therefore, in the obtained semiconductor device, the electrode 7 can be easily provided at a free position, and the obtained semiconductor device can be easily mounted three-dimensionally. As a result, it becomes easy to make the semiconductor device highly integrated and highly functional.

Further, the method for manufacturing a semiconductor device according to the present embodiment can also be applied to manufacturing a fan-out type wafer level package (FOWLP), a fan-out type panel level package (FOPLP), a component-embedded substrate, and the like. In particular, since the above manufacturing method can seal a plurality of electronic components at once, the package obtained by this can be divided into a plurality of semiconductor packages by cutting at a predetermined position. It is possible to efficiently produce a semiconductor package with a high yield. That is, the method for manufacturing a semiconductor device according to the present embodiment can also be applied to an efficient and high-yield method.

The embodiments described above are described for facilitating the understanding of the present invention, and are not described for limiting the present invention. Therefore, each element disclosed in the above embodiment is intended to include all design changes and equivalents belonging to the technical scope of the present invention.

Hereinafter, the present invention will be described in more detail by showing Examples and Test Examples, but the present invention is not limited to the following Test Examples and the like.

[Manufacturing Example 1] (Manufacturing of the first sealing sheet)
5.1 parts (solid content equivalent, the same applies hereinafter) of bisphenol A type phenoxy resin as a thermoplastic resin (manufactured by Mitsubishi Chemical Corporation, product name "jER1256") and bisphenol A type epoxy resin as a thermosetting resin (Mitsubishi Chemical) 5.7 parts of product name "jER828" manufactured by Nippon Kayaku Co., Ltd. and 5.7 parts of biphenyl type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., product name "NC-3000-L") as a heat-curable resin. 4.1 parts of naphthalene type epoxy resin (manufactured by DIC, product name "HP-4700") as a sex resin and biphenyl type phenol (manufactured by Meiwa Kasei Co., Ltd., product name "MEHC-7851-SS") as a thermosetting resin. 14.3 parts, 0.1 part of 2-ethyl-4-methylimidazole (manufactured by Shikoku Kasei Co., Ltd., product name "2E4MZ") as an imidazole-based curing catalyst, and epoxy silane-treated silica filler as an inorganic filler [ Silica filler (manufactured by Admatex, product name "SO-C2", average particle size: 0.5 μm, maximum particle size: 2 μm, shape: spherical) 3-glycidoxypropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., Surface-treated using the product name "KBM-403", minimum coating area: 330 m ² / g)] 65 parts are mixed in methyl ethyl ketone, and a resin composition having a solid content concentration of 50% by mass is mixed. Obtained the coating liquid of. The coating liquid is applied onto the peeling surface of a release film (manufactured by Lintec Corporation, product name "SP-PET38AL-5") in which an alkyd-based release agent layer is provided on one side of a 38 μm-thick polyethylene terephthalate film. The obtained coating film was dried in an oven at 100 ° C. for 1 minute to prepare a sealing sheet composed of a resin composition layer having a thickness of 50 μm and a release film, which was used as the first resin composition layer. It was used as a first sealing sheet made of a release film.

[Manufacturing Example 2] (Manufacturing of a second sealing sheet)
A sealing sheet composed of a resin composition layer having a thickness of 20 μm and a release film was prepared in the same manner as in Production Example 1 except that the thickness of the resin composition layer was changed to 20 μm, and this was used as a second. A second sealing sheet composed of a resin composition layer and a release film was used.

[Manufacturing Example 3] (Production of Adhesive Sheet)
40 parts by mass of an acrylic acid ester copolymer (a copolymer of 92.8% by mass of 2-ethylhexyl acrylate, 7.0% by mass of 2-hydroxyethyl acrylate, and 0.2% by mass of acrylic acid). An aliphatic isocyanate having 5 parts by mass of both-terminal hydroxyl-hydroxylated polybutadiene (manufactured by Nippon Soda Co., Ltd., product name "GI-1000") as a tackifier and hexamethylene diisocyanate as a cross-linking agent (manufactured by Nippon Polyurethane Industry Co., Ltd., Product name "Coronate HX") 3.5 parts by mass was mixed in methyl ethyl ketone to prepare a coating liquid for a pressure-sensitive adhesive composition having a solid content concentration of 30% by mass.

Next, the prepared coating liquid was peeled off from one surface of the polyethylene terephthalate film with a silicone-based peeling layer using a roll coater (manufactured by Lintec Corporation, product name "SP-PET382150", thickness: 38 μm. ) Is applied to the peeled surface, heated at 90 ° C. and 90 seconds, then heated at 115 ° C. and 90 seconds, and the coating film is dried to form an adhesive layer, which adheres to a thickness of 50 μm. A laminate of the agent layer and the release film was obtained.

Subsequently, the surface of the obtained pressure-sensitive adhesive layer opposite to the release film was used as a base material for a transparent polyethylene terephthalate film (manufactured by Toyobo Co., Ltd., product name "PET50A-4300", thickness: 50 μm, glass transition temperature Tg). : 67 ° C., MD direction heat shrinkage rate: 1.2%, CD direction heat shrinkage rate: 0.6%) to obtain an adhesive sheet.

Note that the obtained adhesive layer, by a method described later, at 100 ° C., the measurement frequency was measured storage modulus when a 1 Hz, was 2.36 × 10 5 ^Pa. Further, the adhesive force of the obtained adhesive sheet to the copper foil after heating was measured by a method described later and found to be 1.2 N / 25 mm. The adhesive strength of the pressure-sensitive adhesive sheet to the polyimide film after heating was measured by a method described later and found to be 1.1 N / 25 mm. Moreover, when the 5% weight loss temperature of the pressure-sensitive adhesive layer was measured by the method described later, it was 304 ° C.

The storage elastic modulus described above was measured as follows. Using a plurality of laminated bodies of the pressure-sensitive adhesive layer and the release film prepared as described above, the pressure-sensitive adhesive layers are laminated until the total thickness becomes 3 mm, and then a cylinder (thickness 3 mm) having a diameter of 8 mm is punched out. , This was used as a sample. The sample is measured by the torsional shear method using a viscoelasticity measuring instrument (manufactured by REOMETRIC, product name "DYNAMIC ANALYZER") in accordance with JIS K7244-6: 1999, under the conditions of measurement frequency: 1 Hz and measurement temperature: 100 ° C. The storage elastic modulus (Pa) was measured in.

The adhesive strength to the copper foil described above was measured as follows. The adhesive sheet prepared as described above was cut into a length of 100 mm and a width of 25 mm, and the release film was peeled off to form a test piece. The pressure was applied to a copper foil at 0.5 MPa and 50 ° C. for 20 minutes, and then 100. Heating under the conditions of ° C. and 30 minutes, heating under the conditions of 180 ° C. and 30 minutes, and heating under the conditions of 190 ° C. and 1 hour were performed in order. Then, under a standard environment (23 ° C., 50% RH), a tensile tester (manufactured by Shimadzu Corporation, product name "Autograph AG-IS") was used to achieve a peeling angle of 180 ° and a peeling speed of 300 mm / min. The adhesive sheet was peeled off with, and the adhesive strength (mN / 25 mm) was measured. Further, the adhesive strength to the polyimide film described above was measured by the same method for measuring the adhesive strength as described above, except that the object to which the adhesive sheet was attached was changed from the copper foil to the polyimide film.

The 5% weight loss temperature described above was measured as follows. That is, for the pressure-sensitive adhesive layer formed as described above, a differential thermal / thermogravimetric simultaneous measuring device (manufactured by Shimadzu Corporation, product name "DTG-60") was used, and the inflow gas was nitrogen, and the gas inflow rate was 100 ml / min. Thermogravimetric measurement was performed by raising the temperature from 40 ° C. to 550 ° C. at a heating rate of 20 ° C./min (based on JIS K7120 “Plastic thermogravimetric measurement method”). Based on the obtained thermogravimetric curve, the temperature at which the mass was reduced by 5% with respect to the mass at a temperature of 100 ° C. (5% weight loss temperature) was determined.

[Example 1]
(Electronic component mounting process)
First, a frame-shaped member having a plurality of openings on the exposed adhesive surface by peeling the release film from the adhesive sheet produced in Production Example 3 (copper, thickness: 130 μm, opening size: 8 mm × 8 mm). Was pasted. Next, a plurality of semiconductor chips (5 mm × 5 mm, thickness: 130 μm) were prepared, and one semiconductor chip was placed at a predetermined position of each opening in the frame-shaped member.

(1st laminating process)
Next, the surface of the first sealing sheet produced in Production Example 1 on the side of the first resin composition layer was laminated on the adhesive sheet so as to cover the semiconductor chip and the frame-shaped member in a state of being heated to 90 ° C. Then, I attached it temporarily. Next, the first sealing sheet is placed in a state of reduced pressure to 2 hPa or less using a vacuum laminator device, and then pressed at 90 ° C. and a pressure of 0.1 MPa with a heat-resistant rubber for 10 seconds, and then pressed at 90 ° C. and a pressure. Pressed at 0.3 MPa with heat resistant rubber for 30 seconds.

(Curing step of first sealing sheet)
Then, the release film is peeled off from the laminated first sealing sheet, the first resin composition layer is heat-cured at 100 ° C. (T1) for 30 minutes, and then heat-cured at 180 ° C. (T2) for 60 minutes. Then, the first hardened layer was formed. Next, the pressure-sensitive adhesive sheet was peeled from the first cured layer at a peeling angle of 180 °.

(Second laminating process)
Next, the second resin composition layer of the second sealing sheet produced in Production Example 2 was laminated on the exposed surfaces of the semiconductor chip and the first cured layer that were exposed by peeling off the pressure-sensitive adhesive sheet. The laminate is placed in a state of reduced pressure to 2 hPa or less using a vacuum laminator device, then pressed with heat-resistant rubber at 90 ° C. and a pressure of 0.3 MPa for 10 seconds, and then heat-resistant rubber at 90 ° C. and a pressure of 0.3 MPa. Was pressed for 30 seconds.

(Curing step of second sealing sheet)
Then, the release film is peeled off from the laminated second sealing sheet, the second resin composition layer is heat-cured at 100 ° C. (T1) for 30 minutes, and then heat-cured at 180 ° C. (T2) for 60 minutes. Then, a second hardened layer was formed. As a result, a sealed body including a semiconductor chip sealed by the first cured layer and the second cured layer was obtained.

(Hole forming process)
A surface on the second cured layer side of the obtained encapsulant is _{irradiated with a laser using a CO 2} laser processing machine, and a via hole having a diameter of 100 μm on the surface of the encapsulant and reaching a semiconductor chip. Was formed.

(Desmia process)
Next, the surface of the sealant on the first cured layer side (the surface opposite to the surface of the second cured layer on which the via hole was formed) was completely covered with a protective tape, and then a glycol ether solvent and ethylene glycol were used. Immerse in an alkaline swelling solution mixed with monobutyl ether at 60 ° C. for 5 minutes, then in a roughening solution (alkaline permanganic acid aqueous solution) at 80 ° C. for 15 minutes, and finally in an aqueous solution of sulfuric acid. It was soaked at 40 ° C. for 5 minutes to neutralize, and then dried at 80 ° C. for 5 minutes.

(Electrode forming process)
Subsequently, the encapsulant was immersed in an electroless plating solution at 40 ° C. for 6 minutes, then immersed in an electroless copper plating solution at 25 ° C. for 18 minutes, and then annealed at 150 ° C. for 30 minutes. rice field. Then, a resist layer for plating was attached to the surface of the encapsulant where via holes were formed, and a region having a predetermined pattern in the resist layer for plating was removed by exposure and development. Then, copper sulfate electrolytic plating was performed to form a layer made of copper having a thickness of 10 μm in the removed region. Next, the remaining resist layer for plating was peeled off, and an unnecessary electroless copper-plated portion was removed by flash etching to obtain an electrode having a wiring shape. The wiring patterns of the wiring are the wiring pattern 1 in which the wiring width (L) is 50 μm and the wiring interval (S) is 50 μm, and the wiring pattern in which the wiring width (L) is 10 μm and the wiring interval (S) is 10 μm. It was 2. Finally, the protective tape was peeled off and the annealing treatment was performed at 190 ° C. for 60 minutes to obtain a sealed body having an electrode formed on the surface of the second cured layer.

[Example 2]
A sealed body was obtained in the same manner as in Example 1 except that an electrode was formed on the surface on the first cured layer side. That is, an electrode was not formed on the surface on the second cured layer side, and an electrode was formed only on the surface on the first cured layer side to obtain a sealed body.

[Example 3]
Example 1 except that each of the curing step of the first sealing sheet and the curing step of the second sealing sheet was heat-cured by one heat treatment at 180 ° C. (T1) for 60 minutes as a curing condition. A sealed body was obtained in the same manner as in the above.

[Example 4]
In each of the curing step of the first sealing sheet and the curing step of the second sealing sheet, the curing conditions were 100 ° C. (T1) for 30 minutes and then 150 ° C. (T2) for 30 minutes. A sealed body was obtained in the same manner as in Example 1 except for the above.

[Test Example 1] (Measurement of reaction rate)
With respect to the first sealing sheet produced in the same manner as in Production Example 1, the first resin composition layer obtained by peeling the release film was subjected to a differential scanning calorimetry (DSC) under the following conditions, and the first resin was used. The calorific value (integral amount) due to thermosetting of the composition was measured. The calorific value measured by this was defined as ΔH0 (kJ).
Differential scanning calorimetry (DSC)
Equipment: Made by TA Instruments Co., Ltd. Temperature rise rate: 10 ° C / min
Temperature range: 50 ° C to 300 ° C

Further, the first sealing sheet produced in the same manner as in Production Example 1 was heat-cured for 30 minutes under the same conditions as the heat curing in the curing step of the first sealing sheet of Example 1. After that, it was heat-cured at 180 ° C. (T2) for 60 minutes], and then the first cured layer obtained by peeling off the release film was placed on a differential scanning calorimeter (DSC) under the same conditions as above. In addition, the calorific value (integrated amount) due to heat curing of the first cured layer was measured. The measured calorific value was defined as ΔH1 (kJ).

Then, using the measured ΔH0 (kJ) and ΔH1 (kJ), the reaction rate (%) of the first cured layer according to Example 1 was calculated from the following formula. The results are shown in Table 1.
Reaction rate (%) = (ΔH0-ΔH1) / ΔH0 × 100

Further, in the second sealing sheet prepared in the same manner as in Production Example 2, the calorific value ΔH0 (kJ) of the second resin composition layer obtained by peeling the release film was measured in the same manner as described above. Further, the second sealing sheet prepared in the same manner as in Production Example 2 was thermoset for 30 minutes under the same conditions as the thermosetting in the curing step of the second sealing sheet of Example 1. Then, after thermosetting at 180 ° C. (T2) for 60 minutes], the calorific value ΔH1 (kJ) of the second cured layer obtained by peeling off the release film was measured in the same manner as described above. Then, the reaction rate (%) of the second cured layer according to Example 1 was calculated from the measured ΔH0 (kJ) and ΔH1 (kJ) by calculating in the same manner as described above. The results are shown in Table 1.

Further, the first method according to Examples 2 to 4 is the same as the above method, except that the thermosetting conditions for measuring the calorific value ΔH1 (kJ) described above are changed to the conditions described in each Example. The reaction rate (%) of the hardened layer 1 and the reaction rate (%) of the second hardened layer were calculated. These results are also shown in Table 1.

[Test Example 2] (Measurement of Arithmetic Mean Roughness)
A semiconductor obtained in the curing step of the second sealing sheet in the production methods of Examples 1 to 4 and sealed by the sealing body (the first cured layer and the second cured layer) before the pore forming step is performed. A contact type roughness meter (manufactured by Mitutoyo Co., Ltd., product name "SV3000S4") is used on the surfaces of the first cured layer and the second cured layer in accordance with JIS B0601-1994. The arithmetic mean roughness Ra (μm) was measured using the product. The results are shown in Table 1.

[Test Example 3] (Evaluation of electrode formability)
Wiring pattern 1 (L / S = 50 μm / 50 μm) and wiring pattern 2 (L / S = 10 μm / 10 μm) in the sealed body manufactured in the examples were measured with a digital microscope (manufactured by KEYENCE CORPORATION, product name “VHX-100”). ”) Was observed, and the electrode forming property was evaluated according to the following criteria.
A: The intended wiring pattern is formed.
B: There is a partial deviation from the intended wiring pattern.
C: Deviation from the intended wiring pattern has occurred, and contact (short circuit) between the wirings has also occurred.

According to the manufacturing method according to the example, it was confirmed that the steps from the chip mounting step to the electrode formation on the sealing resin can be efficiently performed with extremely simple work contents. Further, as shown in Table 1, it was confirmed that an electrode having a good wiring pattern can be formed on any surface of the encapsulant. This makes it possible to make the semiconductor device highly integrated and highly functional. From the above, according to the manufacturing method according to the embodiment, the electronic component can be satisfactorily sealed, and the semiconductor device can be satisfactorily manufactured.

The method for manufacturing a semiconductor device according to the present invention can be suitably used for manufacturing a semiconductor device such as a chip-embedded substrate, a fan-out type wafer level package, and a fan-out type panel level package.

1 ... Adhesive sheet 2 ... Electronic component 3 ... First resin composition layer 3'... First cured layer 4 ... Second resin composition layer 4'... Second cured layer 5 ... Sealing body 6 ... Holes 7 ... Electrode

Claims (16)

Electronic component mounting process, in which one or more electronic components are mounted on the adhesive surface of the adhesive sheet,
A first laminating step of laminating the first resin composition layer in a first sealing sheet including at least a curable first resin composition layer so as to cover at least the electronic components.
A peeling step of peeling the pressure-sensitive adhesive sheet from the electronic component and the first resin composition layer.
A second laminating step of laminating a second sealing sheet provided with at least a curable second resin composition layer so as to cover the exposed surface of the electronic component exposed by peeling of the adhesive sheet.
A first cured layer formed by curing the first resin composition layer, a second cured layer formed by curing the second resin composition layer, the first cured layer, and the second cured layer. A curing step of obtaining a sealed body including the electronic component sealed by the cured layer of
A hole forming step of forming a hole that penetrates at least one of the first cured layer and the second cured layer and exposes a part of the surface of the electronic component.
Look including an electrode forming step of forming a desmear process, and electrically connected electrodes on the electronic component through the hole to desmearing the sealing body the holes are formed,
The pressure-sensitive adhesive sheet comprises a base material and a pressure-sensitive adhesive layer laminated on the base material.
The base material is at least one selected from polyester film, polyolefin film, polyimide film, non-woven fabric and paper.
The thickness of the base material is 10 μm or more and 500 μm or less.
The pressure-sensitive adhesive layer is composed of at least one pressure-sensitive adhesive selected from an acrylic pressure-sensitive adhesive, a rubber-based pressure-sensitive adhesive, a silicone-based pressure-sensitive adhesive, a urethane-based pressure-sensitive adhesive, a polyester-based pressure-sensitive adhesive, and a polyvinyl ether-based pressure-sensitive adhesive. <br/> A method for manufacturing a semiconductor device. In the electronic component mounting step, a frame-shaped member is provided around the electronic component on the adhesive sheet.
In the first laminating step, at least a part of the frame-shaped member is sealed together with the electronic component.
The method for manufacturing a semiconductor device according to claim 1. The method for manufacturing a semiconductor device according to claim 1 or 2 , wherein the curing of the first resin composition layer is performed at a stage between the first laminating step and the peeling step. The method for manufacturing a semiconductor device according to any one of claims 1 to 3, wherein at least one of the first cured layer and the second cured layer exhibits insulating properties. The semiconductor device according to any one of claims 1 to 4 , wherein curing of at least one of the first resin composition layer and the second resin composition layer is performed by heat treatment. Production method. The method for manufacturing a semiconductor device according to claim 5 , wherein the heat treatment is performed stepwise by a plurality of heat treatments. The sixth aspect of claim 6, wherein the heat treatment is carried out by a first heat treatment in which the heat is cured at a temperature T1 and a second heat treatment in which the heat is cured at a temperature T2 higher than the temperature T1. A method for manufacturing a semiconductor device. The semiconductor device according to any one of claims 1 to 7 , wherein the first resin composition layer is cured so that the reaction rate of the first cured layer is 85% or more. Manufacturing method. The semiconductor device according to any one of claims 1 to 8 , wherein the curing of the second resin composition layer is performed so that the reaction rate of the second cured layer is 85% or more. Manufacturing method. The first at least one resin composition layer and the second resin composition layer, according to claim 1-9, characterized in that one formed from a resin composition containing a thermosetting resin The method for manufacturing a semiconductor device according to any one of the above. The method for manufacturing a semiconductor device according to claim 10 , wherein the resin composition contains an inorganic filler. The method for manufacturing a semiconductor device according to claim 11 , wherein the inorganic filler is surface-treated with a surface treatment agent having a ^{minimum coating area of less than 550 m 2 / g.} Any one of claims 10 to 12 , wherein the first resin composition layer and the second resin composition layer are formed from the resin composition having the same composition. The method for manufacturing a semiconductor device according to the above. The method for manufacturing a semiconductor device according to any one of claims 1 to 13 , wherein the thickness of the second resin composition layer is 1 μm or more and 100 μm or less. The method for manufacturing a semiconductor device according to any one of claims 1 to 14 , wherein the thickness of the first resin composition layer is 50 μm or more and 1000 μm or less. The adhesive sheet is adhered to a copper foil or a polyimide film as an adherend on its adhesive surface, heated at 100 ° C. and 30 minutes, and then heated at 180 ° C. and 30 minutes, and further 190. The adhesive force to the adherend at room temperature after heating at ° C. and 1 hour is 0.7 N / 25 mm or more regardless of whether the adherend is the copper foil or the polyimide film. The method for manufacturing a semiconductor device according to any one of claims 1 to 15, wherein the length is 2.0 N / 25 mm or less.

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