JP7211693B2 - resin composition - Google Patents

Description

The present invention relates to resin compositions. Furthermore, it relates to a resin sheet, a circuit board, and a semiconductor chip package using the resin composition.

2. Description of the Related Art In recent years, electronic devices have become smaller and more sophisticated, and the mounting density of semiconductor elements on printed wiring boards tends to increase. Along with the high functionality of semiconductor devices to be mounted, there is a demand for a technique for efficiently diffusing heat generated by the semiconductor devices.

For example, Patent Document 1 discloses that heat is diffused by using an insulating layer obtained by curing a highly thermally conductive resin composition containing a resin and an inorganic filler having a specific average particle size for a printed wiring board. It is

JP 2013-189625 A

The inventors studied the thermal conductivity of the insulating layer in order to more efficiently diffuse the heat generated by the semiconductor element. As a result, when a resin composition containing a thermally conductive filler is cured to form an insulating layer, the thermal conductivity of the resulting insulating layer is in a trade-off relationship with the adhesion strength (peel strength) to the metal layer. The inventors have found that Specifically, by increasing the content of the thermally conductive filler in the resin composition, the thermal conductivity of the resulting insulating layer can be improved, but the thermal conductivity is not sufficient to exhibit sufficient thermal conductivity. It has been found that when the filler content is increased, the obtained insulating layer is inferior in adhesive strength to the metal layer.

The present invention is to provide a resin composition capable of obtaining an insulating layer having excellent thermal conductivity and adhesion strength to a metal layer; a resin sheet, a circuit board, and a semiconductor chip package using the resin composition. .

The present inventors found that (A) a resin having in its molecule at least one structure selected from a polybutadiene structure, a polysiloxane structure, a polyisoprene structure, a polyisobutylene structure, and a polycarbonate structure, and (B) an aromatic structure. and (C) a thermally conductive filler having a predetermined average particle size and a predetermined specific surface area, an insulating layer having excellent thermal conductivity and adhesion strength to a metal layer can be obtained. , have completed the present invention.

That is, the present invention includes the following contents.
[1] (A) a resin having in its molecule one or more structures selected from a polybutadiene structure, a polysiloxane structure, a polyisoprene structure, a polyisobutylene structure, and a polycarbonate structure;
(B) an epoxy resin having an aromatic structure, and (C) a thermally conductive filler,
A resin composition in which component (C) has an average particle size of 2.5 μm to 5.0 μm and a specific surface area of 0.8 m ² /g or more.
[2] The resin composition according to [1], wherein the metal layer has a peel strength of 0.4 kgf/cm or more, which is obtained by thermally curing the resin composition at 180° C. for 90 minutes.
[3] The resin composition according to [1] or [2], wherein the cured product obtained by thermally curing the resin composition at 180° C. for 90 minutes and the electrolytic copper foil have a peel strength of 0.4 kgf/cm or more.
[4] The resin composition according to any one of [1] to [3], wherein the content of component (C) is 87% by mass or more when the non-volatile component in the resin composition is 100% by mass. .
[5] The resin composition according to any one of [1] to [4], wherein component (C) is alumina.
[6] The thermal conductivity of the cured product obtained by thermally curing the resin composition at 180 ° C. for 90 minutes is 1.5 W / m · K to 5.0 W / m · K of [1] to [5] The resin composition according to any one of the above.
[7] The component (A) according to any one of [1] to [6], wherein the component (A) is one or more selected from resins having a glass transition temperature of 25°C or less and resins that are liquid at 25°C. Resin composition.
[8] The resin composition according to any one of [1] to [7], wherein component (A) has a functional group capable of reacting with component (B).
[9] of [1] to [8], wherein component (A) has one or more functional groups selected from hydroxyl groups, acid anhydride groups, phenolic hydroxyl groups, epoxy groups, isocyanate groups and urethane groups. The resin composition according to any one of the above.
[10] The resin composition according to any one of [1] to [9], wherein component (A) has an imide structure.
[11] The resin composition according to any one of [1] to [10], wherein component (A) has a phenolic hydroxyl group.
[12] The resin composition according to any one of [1] to [11], wherein component (A) has a polybutadiene structure and a phenolic hydroxyl group.
[13] The resin composition according to any one of [1] to [12], which is a resin composition for an insulating layer of a semiconductor chip package.
[14] A resin sheet comprising a support and a resin composition layer containing the resin composition according to any one of [1] to [13] provided on the support.
[15] The resin sheet according to [14], which is a resin sheet for an insulating layer of a semiconductor chip package.
[16] A circuit board comprising an insulating layer formed from a cured product of the resin composition according to any one of [1] to [13].
[17] A semiconductor chip package including the circuit board according to [16] and a semiconductor chip mounted on the circuit board.
[18] A semiconductor chip package comprising a semiconductor chip sealed with the resin composition according to any one of [1] to [13] or the resin sheet according to [14].

INDUSTRIAL APPLICABILITY According to the present invention, there are provided a resin composition capable of obtaining an insulating layer having excellent thermal conductivity and adhesion strength to a metal layer; and a resin sheet, a circuit board, and a semiconductor chip package using the resin composition. can be done.

FIG. 1 is a schematic cross-sectional view showing an example of a semiconductor chip package (fan-out type WLP) of the present invention.

Hereinafter, the resin composition, resin sheet, circuit board, and semiconductor chip package of the present invention will be described in detail.

[Resin composition]
The resin composition of the present invention comprises (A) a resin having, in its molecule, one or more structures selected from a polybutadiene structure, a polysiloxane structure, a polyisoprene structure, a polyisobutylene structure, and a polycarbonate structure; and (C) a thermally conductive filler, wherein the component (C) has an average particle size of 2.5 μm to 5.0 μm and a specific surface area of 0.8 m ² /g or more. be.

Insulating layer excellent in thermal conductivity and peel strength against metal layer by including component (A), component (B), and component (C) having a predetermined average particle size and a predetermined specific surface area in the resin composition can be obtained. The resin composition further contains (D) a curing agent, (E) a curing accelerator, (F) an inorganic filler (excluding those corresponding to component (C)), and (G) a flame retardant, if necessary. obtain. Each component contained in the resin composition will be described in detail below.

<(A) Resin Having One or More Structures Selected from Polybutadiene Structure, Polysiloxane Structure, Polyisoprene Structure, Polyisobutylene Structure, and Polycarbonate Structure>
The resin composition of the present invention contains, as the component (A), a resin having at least one structure selected from a polybutadiene structure, a polysiloxane structure, a polyisoprene structure, a polyisobutylene structure, and a polycarbonate structure in the molecule. Component (A) exhibits flexibility by having in its molecule at least one structure selected from a polybutadiene structure, a polysiloxane structure, a polyisoprene structure, a polyisobutylene structure, and a polycarbonate structure. As described above, if the component (C) is simply highly filled, the heat conductivity can be improved, but the filling property is lowered and the peel strength is lowered. By containing a flexible resin such as the component (A), the affinity between the resin component and the components (C) and (F) is improved, or the adhesion as a whole is improved. It is possible to obtain an insulating layer that suppresses the decrease and has excellent peel strength.

More specifically, component (A) is one or two selected from butadiene structures such as polybutadiene and hydrogenated polybutadiene, polysiloxane structures such as silicone rubber, polyisoprene structures, polyisobutylene structures, and polycarbonate structures. It preferably has the above structure, and more preferably has a polybutadiene structure.

Component (A) preferably has a high molecular weight in order to exhibit flexibility, and has a number average molecular weight (Mn) of preferably 1,000 to 1,000,000, more preferably 5,000 to 9,00,000. 000. The number average molecular weight (Mn) is a polystyrene equivalent number average molecular weight measured using GPC (gel permeation chromatography).

Component (A) is preferably one or more resins selected from resins having a glass transition temperature (Tg) of 25°C or less and resins that are liquid at 25°C, in order to exhibit flexibility.

The glass transition temperature of the resin having a glass transition temperature (Tg) of 25° C. or lower is preferably 20° C. or lower, more preferably 15° C. or lower. Although the lower limit of the glass transition temperature is not particularly limited, it is usually −15° C. or higher. The resin that is liquid at 25°C is preferably a resin that is liquid at 20°C or lower, more preferably a resin that is liquid at 15°C or lower.

From the viewpoint of improving compatibility, component (A) preferably has a functional group capable of reacting with component (B), which will be described later. The functional group capable of reacting with component (B) includes a functional group that appears upon heating.

In one preferred embodiment, the functional group capable of reacting with component (B) is selected from the group consisting of hydroxyl group, carboxyl group, acid anhydride group, phenolic hydroxyl group, epoxy group, isocyanate group and urethane group. It is a functional group of one or more species. Among them, the functional group is preferably a hydroxy group, an acid anhydride group, a phenolic hydroxyl group, an epoxy group, an isocyanate group or a urethane group, more preferably a hydroxy group, an acid anhydride group, a phenolic hydroxyl group or an epoxy group, and a phenol are particularly preferred. However, when an epoxy group is included as a functional group, the (A) component does not have an aromatic structure.

A preferred embodiment of component (A) is a butadiene resin. As the butadiene resin, a butadiene resin that is liquid at 25°C or has a glass transition temperature of 25°C or less is preferable, and includes a hydrogenated polybutadiene skeleton-containing resin, a hydroxyl group-containing butadiene resin, a phenolic hydroxyl group-containing butadiene resin, a carboxyl group-containing butadiene resin, and an acid anhydride. One or more resins selected from the group consisting of a butadiene resin containing a physical group, a butadiene resin containing an epoxy group, a butadiene resin containing an isocyanate group, and a butadiene resin containing a urethane group are more preferred, and a phenolic hydroxyl group-containing butadiene resin is even more preferred. Here, "butadiene resin" refers to a resin containing a polybutadiene structure, and in these resins, the polybutadiene structure may be contained in the main chain or in the side chain. The polybutadiene structure may be partially or wholly hydrogenated. Here, the "hydrogenated polybutadiene skeleton-containing resin" refers to a resin in which at least a portion of the polybutadiene skeleton is hydrogenated, and does not necessarily have to be a resin in which the polybutadiene skeleton is completely hydrogenated.

Examples of hydrogenated polybutadiene skeleton-containing resins include hydrogenated polybutadiene skeleton-containing epoxy resins. Examples of phenolic hydroxyl group-containing butadiene resins include resins having a polybutadiene structure and having phenolic hydroxyl groups.

The number average molecular weight (Mn) of the butadiene resin is preferably 1,000 to 100,000, more preferably 5,000 to 50,000, more preferably 7,500 to 30, in order to exhibit flexibility and adhesion. ,000, more preferably 10,000 to 15,000. Here, the number average molecular weight (Mn) of the resin is the polystyrene equivalent number average molecular weight measured using GPC (gel permeation chromatography).

When the butadiene resin has a functional group, the functional group equivalent is preferably 100 to 10,000, more preferably 200 to 5,000 in order to exhibit flexibility and adhesion. Note that the functional group equivalent is the number of grams of resin containing 1 gram equivalent of functional group. For example, the epoxy group equivalent can be measured according to JIS K7236. The hydroxyl equivalent can be calculated by dividing the molecular weight of KOH by the hydroxyl value measured according to JIS K1557-1.

Specific examples of butadiene resins include Clay Valley's "Ricon 657" (epoxy group-containing polybutadiene), "Ricon 130MA8", "Ricon 130MA13", "Ricon 130MA20", "Ricon 131MA5", "Ricon 131MA10", " Ricon 131MA17", "Ricon 131MA20", "Ricon 184MA6" (acid anhydride group-containing polybutadiene), Nippon Soda Co., Ltd. "JP-100", "JP-200" (epoxidized polybutadiene), "GQ-1000" ( Hydroxy group- and carboxyl group-introduced polybutadiene), "G-1000", "G-2000", "G-3000" (both hydroxyl-terminated polybutadiene), "GI-1000", "GI-2000", "GI-3000" ( Hydrogenated polybutadiene with both hydroxyl groups), Daicel's "PB3600", "PB4700" (polybutadiene skeleton epoxy resin), "Epofriend A1005", "Epofriend A1010", "Epofriend A1020" (styrene, butadiene and styrene block epoxidized copolymer), Nagase ChemteX Co., Ltd. "FCA-061L" (hydrogenated polybutadiene skeleton epoxy resin), "R-45EPT" (polybutadiene skeleton epoxy resin), and the like.

Another preferred embodiment of component (A) is a resin having at least one structure selected from a polybutadiene structure, a polysiloxane structure, a polyisoprene structure, a polyisobutylene structure, and a polycarbonate structure, and an imide structure. can also be used. As such a component (A), a linear polyimide made from hydroxyl group-terminated polybutadiene, a diisocyanate compound and a tetrabasic acid anhydride (the polyimide described in JP-A-2006-37083 and WO 2008/153208) etc. The polybutadiene structure content of the polyimide resin is preferably 60% to 95% by mass, more preferably 75% to 85% by mass. Details of the polyimide resin can be referred to in JP-A-2006-37083 and WO 2008/153208, the contents of which are incorporated herein.

A preferred embodiment of component (A) is a carbonate resin. As the carbonate resin, a carbonate resin having a glass transition temperature of 25° C. or less is preferable, and a hydroxyl group-containing carbonate resin, a phenolic hydroxyl group-containing carbonate resin, a carboxy group-containing carbonate resin, an acid anhydride group-containing carbonate resin, an epoxy group-containing carbonate resin, One or more resins selected from the group consisting of isocyanate group-containing carbonate resins and urethane group-containing carbonate resins are preferred. Here, "carbonate resin" refers to a resin containing a polycarbonate structure, and in these resins, the polycarbonate structure may be contained in the main chain or in the side chain.

The number average molecular weight (Mn) and functional group equivalent weight of the carbonate resin are the same as those of the butadiene resin, and the preferred ranges are also the same.

Specific examples of carbonate resins include "T6002" and "T6001" (polycarbonate diols) manufactured by Asahi Kasei Chemicals, and "C-1090", "C-2090" and "C-3090" (polycarbonate diols) manufactured by Kuraray Co., Ltd. etc.

A linear polyimide (PCT/JP2016/053609) made from a hydroxyl group-terminated polycarbonate, a diisocyanate compound and a tetrabasic acid anhydride can also be used. The polycarbonate structure content of the polyimide resin is preferably 60% to 95% by mass, more preferably 75% to 85% by mass. Details of the polyimide resin can be referred to the description of PCT/JP2016/053609, the content of which is incorporated herein.

Further, a preferred embodiment of component (A) is polysiloxane resin, isoprene resin, and isobutylene resin.

Specific examples of polysiloxane resins include "SMP-2006", "SMP-2003PGMEA", and "SMP-5005PGMEA" manufactured by Shin-Etsu Silicone Co., Ltd., amine group-terminated polysiloxane, and linear polyimides made from tetrabasic acid anhydride ( International Publication No. 2010/053185) and the like. Specific examples of isoprene resins include “KL-610” and “KL613” manufactured by Kuraray Co., Ltd. Specific examples of the isobutylene resin include "SIBSTAR-073T" (styrene-isobutylene-styrene triblock copolymer) and "SIBSTAR-042D" (styrene-isobutylene diblock copolymer) manufactured by Kaneka Corporation.

From the viewpoint of imparting flexibility, the content of component (A) in the resin composition is preferably 65 when the non-volatile component of the resin composition excluding components (C) and (F) is 100% by mass. % by mass or less, more preferably 60% by mass or less, even more preferably 55% by mass or less, and even more preferably 50% by mass or less. Also, the lower limit is preferably 10% by mass or more, more preferably 15% by mass or more, still more preferably 20% by mass or more, and even more preferably 25% by mass or more.

<(B) Epoxy Resin Having Aromatic Structure>
The resin composition of the present invention contains an epoxy resin having an aromatic structure as component (B). The epoxy resin having an aromatic structure (hereinafter sometimes simply referred to as "epoxy resin") is not particularly limited as long as it has an aromatic structure. Aromatic structures are chemical structures generally defined as aromatic and also include polycyclic aromatic and heteroaromatic rings.

Examples of epoxy resins having an aromatic structure include bixylenol type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, bisphenol AF type epoxy resin, dicyclopentadiene type epoxy resin, tris Phenol-type epoxy resin, naphthol novolac-type epoxy resin, phenol novolak-type epoxy resin, tert-butyl-catechol-type epoxy resin, naphthalene-type epoxy resin, naphthol-type epoxy resin, anthracene-type epoxy resin, glycidylamine-type epoxy having an aromatic structure Resin, glycidyl ester type epoxy resin having aromatic structure, cresol novolak type epoxy resin, biphenyl type epoxy resin, linear aliphatic epoxy resin having aromatic structure, epoxy resin having butadiene structure having aromatic structure, aromatic Structured alicyclic epoxy resin, heterocyclic epoxy resin, spiro ring-containing epoxy resin having aromatic structure, cyclohexane dimethanol type epoxy resin having aromatic structure, naphthylene ether type epoxy resin, having aromatic structure Trimethylol type epoxy resins, tetraphenylethane type epoxy resins, aminophenol type epoxy resins, and the like can be mentioned. An epoxy resin may be used individually by 1 type, and may be used in combination of 2 or more type. Component (B) is preferably one or more selected from bisphenol A type epoxy resins, bisphenol F type epoxy resins, aminophenol type epoxy resins and naphthalene type epoxy resins.

Epoxy resins having an aromatic structure preferably include epoxy resins having two or more epoxy groups in one molecule. When the non-volatile component of the epoxy resin having an aromatic structure is taken as 100% by mass, at least 50% by mass or more is preferably an epoxy resin having two or more epoxy groups in one molecule. Among them, an epoxy resin having two or more epoxy groups in one molecule and having a liquid aromatic structure at a temperature of 20°C (hereinafter referred to as "liquid epoxy resin"), and an epoxy resin having three or more epoxy groups in one molecule It preferably contains an epoxy resin having a group and having a solid aromatic structure at a temperature of 20° C. (hereinafter referred to as “solid epoxy resin”). By using both a liquid epoxy resin and a solid epoxy resin as epoxy resins having an aromatic structure, a resin composition having excellent flexibility can be obtained. Moreover, the breaking strength of the cured product of the resin composition is also improved.

Liquid epoxy resins include bisphenol A-type epoxy resin, bisphenol F-type epoxy resin, bisphenol AF-type epoxy resin, naphthalene-type epoxy resin, glycidyl ester-type epoxy resin having an aromatic structure, and glycidylamine-type epoxy resin having an aromatic structure. , a phenol novolac type epoxy resin, an alicyclic epoxy resin having an ester skeleton having an aromatic structure, a cyclohexanedimethanol type epoxy resin having an aromatic structure, an aminophenol type epoxy resin, and an epoxy having a butadiene structure having an aromatic structure Resin is preferable, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol AF type epoxy resin, aminophenol type epoxy resin and naphthalene type epoxy resin are more preferable, bisphenol A type epoxy resin, bisphenol F type epoxy resin, aminophenol type epoxy resins are more preferred. Specific examples of liquid epoxy resins include "HP4032", "HP4032D", and "HP4032SS" (naphthalene type epoxy resins) manufactured by DIC Corporation, and "828US" and "jER828EL" (bisphenol A type epoxy resins) manufactured by Mitsubishi Chemical Corporation. , “jER806”, “jER807” (bisphenol F type epoxy resin), “jER152” (phenol novolac type epoxy resin), “630”, “630LSD” (glycidylamine type epoxy resin), “ZX1059” manufactured by Nippon Steel & Sumikin Chemical Co., Ltd. ” (mixture of bisphenol A type epoxy resin and bisphenol F type epoxy resin), “EX-721” (glycidyl ester type epoxy resin) manufactured by Nagase ChemteX Corporation, “Celoxide 2021P” manufactured by Daicel Corporation (having an ester skeleton alicyclic epoxy resin), Nippon Steel Chemical's "ZX1658" and "ZX1658GS" (liquid 1,4-glycidylcyclohexane), and Mitsubishi Chemical's "YX7400" (high rebound resilience epoxy resin). These may be used individually by 1 type, and may be used in combination of 2 or more type.

Solid epoxy resins include naphthalene-type tetrafunctional epoxy resin, cresol novolac-type epoxy resin, dicyclopentadiene-type epoxy resin having an aromatic structure, trisphenol-type epoxy resin, naphthol-type epoxy resin, biphenyl-type epoxy resin, and naphthylene. Ether-type epoxy resin, anthracene-type epoxy resin, bisphenol A-type epoxy resin, bisphenol AF-type epoxy resin, tetraphenylethane-type epoxy resin are preferred, naphthalene-type tetrafunctional epoxy resin, naphthol-type epoxy resin, biphenyl-type epoxy resin, naphthyl A lene ether type epoxy resin is more preferable, and a naphthalene type tetrafunctional epoxy resin and a naphthylene ether type epoxy resin are more preferable. Specific examples of solid epoxy resins include DIC's "HP4032H" (naphthalene type epoxy resin), "HP-4700", "HP-4710" (naphthalene type tetrafunctional epoxy resin), "N-690" ( cresol novolak type epoxy resin), "N-695" (cresol novolak type epoxy resin), "HP-7200", "HP-7200L", "HP-7200HH", "HP-7200H", "HP-7200HHH" ( dicyclopentadiene type epoxy resin), "EXA7311", "EXA7311-G3", "EXA7311-G4", "EXA7311-G4S", "HP6000" (naphthylene ether type epoxy resin), "EPPN" manufactured by Nippon Kayaku Co., Ltd. -502H” (trisphenol type epoxy resin), “NC7000L” (naphthol novolac type epoxy resin), “NC3000H”, “NC3000”, “NC3000L”, “NC3100” (biphenyl type epoxy resin), manufactured by Nippon Steel & Sumikin Chemical Co., Ltd. "ESN475V" (naphthol-type epoxy resin), "ESN485" (naphthol-novolak-type epoxy resin), Mitsubishi Chemical Corporation's "YX4000H", "YL6121" (biphenyl-type epoxy resin), "YX4000HK" (bixylenol-type epoxy resin) , "YL7760" (bisphenol AF type epoxy resin), "YX8800" (anthracene type epoxy resin), "PG-100" and "CG-500" manufactured by Osaka Gas Chemicals, "YL7800" manufactured by Mitsubishi Chemical Corporation (fluorene type epoxy resin), "jER1010" (solid bisphenol A type epoxy resin) manufactured by Mitsubishi Chemical Corporation, "jER1031S" (tetraphenylethane type epoxy resin), "157S70" (bisphenol novolac type epoxy resin) manufactured by Mitsubishi Chemical Corporation "YX4000HK" (bixylenol type epoxy resin), "YX8800" (anthracene type epoxy resin), "PG-100" and "CG-500" manufactured by Osaka Gas Chemicals, "YL7800" (fluorene type epoxy resin), "jER1031S" (tetraphenylethane type epoxy resin) manufactured by Mitsubishi Chemical Corporation, and the like. These may be used individually by 1 type, and may be used in combination of 2 or more type.

When a liquid epoxy resin and a solid epoxy resin are used together as component (B), the ratio by mass (solid epoxy resin: liquid epoxy resin) is 1:0.1 to 1:15. A range is preferred. By setting the amount ratio of the liquid epoxy resin to the solid epoxy resin in such a range, i) when used in the form of a resin sheet, moderate adhesiveness is provided, and ii) when used in the form of a resin sheet. iii) a cured product having sufficient breaking strength can be obtained. From the viewpoint of the above effects i) to iii), the mass ratio of the liquid epoxy resin to the solid epoxy resin (solid epoxy resin: liquid epoxy resin) is in the range of 1:0.3 to 1:10. is more preferred, and a range of 1:0.6 to 1:8 is even more preferred.

From the viewpoint of obtaining an insulating layer exhibiting good mechanical strength and insulation reliability, the content of the epoxy resin having an aromatic structure in the resin composition is preferably 100% by mass of the non-volatile component in the resin composition. It is 1% by mass or more, more preferably 2% by mass or more, and still more preferably 3% by mass or more. The upper limit of the epoxy resin content is not particularly limited as long as the effects of the present invention are exhibited, but is preferably 10% by mass or less, more preferably 8% by mass or less, and still more preferably 6% by mass or less.

In addition, the content of the epoxy resin having an aromatic structure in the resin composition is determined from the viewpoint of obtaining an insulating layer exhibiting good mechanical strength and insulation reliability. When the non-volatile component of the product is 100% by mass, it is 20% by mass or more, more preferably 25% by mass or more, and still more preferably 30% by mass or more. The upper limit of the epoxy resin content is not particularly limited as long as the effect of the present invention is exhibited, but is preferably 70% by mass or less, more preferably 60% by mass or less, and still more preferably 55% by mass or less.

The epoxy equivalent weight of the epoxy resin having an aromatic structure is preferably 50-5000, more preferably 50-3000, even more preferably 80-2000, still more preferably 110-1000. Within this range, the crosslink density of the cured product is sufficient, and an insulating layer with a small surface roughness can be obtained. The epoxy equivalent can be measured according to JIS K7236, and is the mass of a resin containing one equivalent of epoxy groups.

The weight average molecular weight of the epoxy resin having an aromatic structure is preferably 100-5000, more preferably 250-3000, still more preferably 400-1500. Here, the weight average molecular weight of the epoxy resin is the polystyrene equivalent weight average molecular weight measured by gel permeation chromatography (GPC).

<(C) Thermally conductive filler>
The resin composition of the present invention contains (C) a thermally conductive filler, and the component (C) has an average particle size of 2.5 μm to 5.0 μm and a specific surface area of 0.8 m ² /g or more. . By containing the component (C) having a predetermined average particle size and specific surface area, an insulating layer having excellent thermal conductivity and peel strength can be obtained. In addition, since the component (C) having a predetermined average particle size and specific surface area has high dispersibility, it is possible to improve the filling property of the resin varnish. Here, in this specification, the thermally conductive filler means an inorganic filler having a thermal conductivity of 20 W/m·K or more.

The material of component (C) is not particularly limited as long as it has a thermal conductivity within the above range, a predetermined average particle size and a predetermined specific surface area. silicon and the like. Among these, alumina is particularly suitable. (C) component may be used individually by 1 type, and may be used in combination of 2 or more type. Also, two or more of the same materials may be used in combination.

The average particle size of component (C) is 2.5 μm to 5.0 μm from the viewpoint of obtaining an insulating layer excellent in both thermal conductivity and peel strength and from the viewpoint of improving filling properties. The average particle size of component (C) is preferably 2.5 μm to 4.8 μm, more preferably 2.5 μm to 4.5 μm. The average particle size of component (C) can be measured by a laser diffraction/scattering method based on Mie scattering theory. Specifically, the particle size distribution of the inorganic filler is prepared on a volume basis using a laser diffraction/scattering particle size distribution analyzer, and the median diameter thereof can be used as the average particle size for measurement. As the measurement sample, one obtained by ultrasonically dispersing the component (C) in water can be preferably used. As the laser diffraction/scattering particle size distribution analyzer, "LA-500" manufactured by Horiba Ltd., "SALD2200" manufactured by Shimadzu Corporation, etc. can be used. Specifically, it can be measured according to the method described in <Measurement of average particle size of thermally conductive filler> described later.

The specific surface area of component (C) is 0.8 m ² /g or more from the viewpoint of obtaining an insulating layer excellent in both thermal conductivity and peel strength and from the viewpoint of improving filling properties. The specific surface area of component (C) is preferably 0.8 m ² /g to 10 m ² /g, more preferably 0.8 m ² /g to 5 m ² /g. The specific surface area of component (C) can be measured by the nitrogen BET method. Specifically, it can be measured using an automatic specific surface area measuring device, and as an automatic specific surface area measuring device, “Macsorb HM-1210” manufactured by Mountec Co., etc. can be used. Specifically, it can be measured according to the method described in <Measurement of Specific Surface Area of Thermally Conductive Filler> described later.

From the viewpoint of improving moisture resistance and dispersibility, component (C) includes aminosilane coupling agents, epoxysilane coupling agents, mercaptosilane coupling agents, silane coupling agents, alkoxysilane compounds, organosilazane compounds, It may be treated with one or more surface treatment agents such as titanate coupling agents. Examples of commercially available surface treatment agents include "KBM403" (3-glycidoxypropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd., "KBM803" (3-mercaptopropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd., Shin-Etsu Chemical Industry Co., Ltd. "KBE903" (3-aminopropyltriethoxysilane), Shin-Etsu Chemical Co., Ltd. "KBM573" (N-phenyl-3-aminopropyltrimethoxysilane), Shin-Etsu Chemical Co., Ltd. "SZ-31" ( hexamethyldisilazane), Shin-Etsu Chemical Co., Ltd. "KBM103" (phenyltrimethoxysilane), Shin-Etsu Chemical Co., Ltd. "KBM-4803" (long-chain epoxy type silane coupling agent), and the like.

The content of component (C) is preferably 87% by mass or more, more preferably 87% by mass or more, based on 100% by mass of non-volatile components in the resin composition, from the viewpoint of obtaining an insulating layer excellent in both thermal conductivity and peel strength. is 88% by mass or more, more preferably 89% by mass or more, or 90% by mass or more. The upper limit is preferably 95% by mass or less, more preferably 93% by mass or less, and even more preferably 92% by mass or less.

<(D) Curing agent>
The resin composition of the present invention may contain (D) a curing agent. The curing agent is not particularly limited as long as it has a function of curing the resin such as component (B). Examples include phenolic curing agents, naphthol curing agents, active ester curing agents, benzoxazine curing agents, and cyanate esters curing agents, carbodiimide curing agents, and the like. A single curing agent may be used alone, or two or more curing agents may be used in combination. Component (D) is preferably one or more selected from phenol-based curing agents, naphthol-based curing agents, active ester-based curing agents, and cyanate ester-based curing agents. It is preferably one or more selected from agents.

As the phenolic curing agent and the naphtholic curing agent, a phenolic curing agent having a novolac structure or a naphtholic curing agent having a novolac structure is preferable from the viewpoint of heat resistance and water resistance. From the viewpoint of adhesion to the wiring layer, a nitrogen-containing phenolic curing agent is preferable, and a triazine skeleton-containing phenolic curing agent is more preferable. Among them, a triazine skeleton-containing phenol novolac curing agent is preferable from the viewpoint of highly satisfying heat resistance, water resistance, and adhesion to the wiring layer.

Specific examples of phenol-based curing agents and naphthol-based curing agents include "MEH-7700", "MEH-7810", and "MEH-7851" manufactured by Meiwa Kasei Co., Ltd., and "NHN" and "CBN" manufactured by Nippon Kayaku Co., Ltd. ”, “GPH”, Nippon Steel & Sumikin “SN170”, “SN180”, “SN190”, “SN475”, “SN485”, “SN495V”, “SN375”, “SN395”, DIC “TD- 2090", "LA-7052", "LA-7054", "LA-1356", "LA-3018-50P", "EXB-9500", "HPC-9500", "KA-1160", "KA- 1163", "KA-1165", and "GDP-6115L" and "GDP-6115H" manufactured by Gunei Chemical Co., Ltd., and the like.

An active ester curing agent is also preferable from the viewpoint of obtaining an insulating layer having excellent adhesion to a metal layer. The active ester-based curing agent is not particularly limited, but generally contains an ester group with high reaction activity such as phenol esters, thiophenol esters, N-hydroxyamine esters, esters of heterocyclic hydroxy compounds in one molecule. A compound having two or more is preferably used. The active ester curing agent is preferably obtained by a condensation reaction between a carboxylic acid compound and/or a thiocarboxylic acid compound and a hydroxy compound and/or a thiol compound. In particular, from the viewpoint of improving heat resistance, an active ester curing agent obtained from a carboxylic acid compound and a hydroxy compound is preferred, and an active ester curing agent obtained from a carboxylic acid compound and a phenol compound and/or a naphthol compound is more preferred. Examples of carboxylic acid compounds include benzoic acid, acetic acid, succinic acid, maleic acid, itaconic acid, phthalic acid, isophthalic acid, terephthalic acid, and pyromellitic acid. Examples of phenol compounds or naphthol compounds include hydroquinone, resorcinol, bisphenol A, bisphenol F, bisphenol S, phenolphthalin, methylated bisphenol A, methylated bisphenol F, methylated bisphenol S, phenol, o-cresol, m- cresol, p-cresol, catechol, α-naphthol, β-naphthol, 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 2,6-dihydroxynaphthalene, dihydroxybenzophenone, trihydroxybenzophenone, tetrahydroxybenzophenone, phloroglucine, Benzenetriol, dicyclopentadiene-type diphenol compound, phenol novolak, and the like. Here, the term "dicyclopentadiene-type diphenol compound" refers to a diphenol compound obtained by condensing one molecule of dicyclopentadiene with two molecules of phenol.

Specifically, an active ester compound containing a dicyclopentadiene type diphenol structure, an active ester compound containing a naphthalene structure, an active ester compound containing an acetylated product of phenol novolac, and an active ester compound containing a benzoylated product of phenol novolak are preferred. Among them, an active ester compound containing a naphthalene structure and an active ester compound containing a dicyclopentadiene-type diphenol structure are more preferable. "Dicyclopentadiene-type diphenol structure" represents a bivalent structure consisting of phenylene-dicyclopentylene-phenylene.

Commercially available active ester curing agents include, as active ester compounds containing a dicyclopentadiene type diphenol structure, "EXB9451", "EXB9460", "EXB9460S", "HPC-8000-65T", and "HPC-8000H- 65TM", "EXB-8000L-65TM" (manufactured by DIC), "EXB9416-70BK" (manufactured by DIC) as an active ester compound containing a naphthalene structure, and "DC808" as an active ester compound containing an acetylated phenol novolac ( Mitsubishi Chemical Corporation), "YLH1026" (manufactured by Mitsubishi Chemical Corporation) as an active ester compound containing a benzoylated phenol novolak, "DC808" (manufactured by Mitsubishi Chemical Corporation) as an active ester curing agent that is an acetylated phenol novolak, "YLH1026" (manufactured by Mitsubishi Chemical Co., Ltd.), "YLH1030" (manufactured by Mitsubishi Chemical Co., Ltd.), "YLH1048" (manufactured by Mitsubishi Chemical Co., Ltd.) and the like can be mentioned as active ester curing agents that are benzoylated phenol novolacs.

Specific examples of the benzoxazine-based curing agent include "HFB2006M" manufactured by Showa High Polymer Co., Ltd., and "Pd" and "Fa" manufactured by Shikoku Kasei Kogyo Co., Ltd.

Examples of cyanate ester curing agents include bisphenol A dicyanate, polyphenolcyanate, oligo(3-methylene-1,5-phenylenecyanate), 4,4′-methylenebis(2,6-dimethylphenylcyanate), 4,4 '-ethylidene diphenyl dicyanate, hexafluorobisphenol A dicyanate, 2,2-bis(4-cyanate)phenylpropane, 1,1-bis(4-cyanatophenylmethane), bis(4-cyanate-3,5-dimethyl Bifunctional cyanate resins such as phenyl)methane, 1,3-bis(4-cyanatophenyl-1-(methylethylidene))benzene, bis(4-cyanatophenyl)thioether, and bis(4-cyanatophenyl)ether, phenol Polyfunctional cyanate resins derived from novolacs, cresol novolaks, etc., and prepolymers obtained by partially triazine-forming these cyanate resins. Specific examples of cyanate ester curing agents include "PT30" and "PT60" (both phenol novolac type polyfunctional cyanate ester resins), "BA230" and "BA230S75" (part of bisphenol A dicyanate) manufactured by Lonza Japan Co., Ltd. or a prepolymer that is entirely triazined to form a trimer), and the like.

Specific examples of carbodiimide curing agents include "V-03" and "V-07" manufactured by Nisshinbo Chemical Co., Ltd., and the like.

When the resin composition contains component (D), the content of the curing agent in the resin composition is not particularly limited. , more preferably 3% by mass or less, and still more preferably 2% by mass or less. The lower limit is not particularly limited, but is preferably 0.1% by mass or more, more preferably 0.5% by mass or more.

<(E) Curing accelerator>
The resin composition of the present invention may contain (E) a curing accelerator. Examples of curing accelerators include phosphorus-based curing accelerators, amine-based curing accelerators, imidazole-based curing accelerators, guanidine-based curing accelerators, and metal-based curing accelerators. Curing accelerators, imidazole-based curing accelerators, and metallic curing accelerators are preferred, and amine-based curing accelerators, imidazole-based curing accelerators, and metallic curing accelerators are more preferred. A hardening accelerator may be used individually by 1 type, and may be used in combination of 2 or more type.

Phosphorus curing accelerators include, for example, triphenylphosphine, phosphonium borate compounds, tetraphenylphosphonium tetraphenylborate, n-butylphosphonium tetraphenylborate, tetrabutylphosphonium decanoate, (4-methylphenyl)triphenylphosphonium thiocyanate. , tetraphenylphosphonium thiocyanate, and butyltriphenylphosphonium thiocyanate, and triphenylphosphine and tetrabutylphosphonium decanoate are preferred.

Examples of amine curing accelerators include trialkylamines such as triethylamine and tributylamine, 4-dimethylaminopyridine, benzyldimethylamine, 2,4,6-tris(dimethylaminomethyl)phenol, 1,8-diazabicyclo (5,4,0)-undecene and the like, with 4-dimethylaminopyridine and 1,8-diazabicyclo(5,4,0)-undecene being preferred.

Examples of imidazole curing accelerators include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazolium trimellitate, 1-cyanoethyl- 2-phenylimidazolium trimellitate, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-undecyl imidazolyl-(1′)]-ethyl-s-triazine, 2,4-diamino-6-[2′-ethyl-4′-methylimidazolyl-(1′)]-ethyl-s-triazine, 2,4- Diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine isocyanurate, 2-phenylimidazole isocyanurate, 2-phenyl-4,5-dihydroxymethylimidazole, 2- Phenyl-4-methyl-5-hydroxymethylimidazole, 2,3-dihydro-1H-pyrrolo[1,2-a]benzimidazole, 1-dodecyl-2-methyl-3-benzylimidazolium chloride, 2-methylimidazoline , 2-phenylimidazoline and the like, and adducts of imidazole compounds and epoxy resins, with 2-ethyl-4-methylimidazole and 1-benzyl-2-phenylimidazole being preferred.

As the imidazole-based curing accelerator, a commercially available product may be used, and examples thereof include "P200-H50" manufactured by Mitsubishi Chemical Corporation.

Guanidine curing accelerators include, for example, dicyandiamide, 1-methylguanidine, 1-ethylguanidine, 1-cyclohexylguanidine, 1-phenylguanidine, 1-(o-tolyl)guanidine, dimethylguanidine, diphenylguanidine, trimethylguanidine, Tetramethylguanidine, Pentamethylguanidine, 1,5,7-triazabicyclo[4.4.0]dec-5-ene, 7-methyl-1,5,7-triazabicyclo[4.4.0] Dec-5-ene, 1-methylbiguanide, 1-ethylbiguanide, 1-n-butylbiguanide, 1-n-octadecylbiguanide, 1,1-dimethylbiguanide, 1,1-diethylbiguanide, 1-cyclohexylbiguanide, 1 -allylbiguanide, 1-phenylbiguanide, 1-(o-tolyl)biguanide and the like, with dicyandiamide and 1,5,7-triazabicyclo[4.4.0]dec-5-ene being preferred.

Metal-based curing accelerators include, for example, organometallic complexes or organometallic salts of metals such as cobalt, copper, zinc, iron, nickel, manganese, and tin. Specific examples of organometallic complexes include organocobalt complexes such as cobalt (II) acetylacetonate and cobalt (III) acetylacetonate, organocopper complexes such as copper (II) acetylacetonate, and zinc (II) acetylacetonate. organic zinc complexes such as iron (III) acetylacetonate; organic nickel complexes such as nickel (II) acetylacetonate; organic manganese complexes such as manganese (II) acetylacetonate; Examples of organic metal salts include zinc octoate, tin octoate, zinc naphthenate, cobalt naphthenate, tin stearate, and zinc stearate.

When the resin composition contains component (E), the content of the curing accelerator in the resin composition is not particularly limited. ~1% by weight is preferred.

<(F) Inorganic filler (excluding those corresponding to component (C))>
The resin composition of the present invention may contain (F) an inorganic filler. The material of component (F) is not particularly limited, but examples include silica, glass, cordierite, silicon oxide, barium sulfate, barium carbonate, talc, clay, mica powder, zinc oxide, hydrotalcite, boehmite, and hydroxide. Aluminum, magnesium hydroxide, calcium carbonate, magnesium carbonate, magnesium oxide, manganese nitride, aluminum borate, strontium carbonate, strontium titanate, calcium titanate, magnesium titanate, bismuth titanate, titanium oxide, zirconium oxide, barium titanate , barium zirconate titanate, barium zirconate, calcium zirconate, zirconium phosphate, and zirconium tungstate phosphate. Among these, silica is particularly suitable. As silica, spherical silica is preferable. An inorganic filler may be used individually by 1 type, and may be used in combination of 2 or more type.

The average particle diameter of the inorganic filler is preferably 5 μm or less, more preferably 2.5 μm or less, still more preferably 2.2 μm or less, from the viewpoint of improving circuit embedding properties and obtaining an insulating layer with low surface roughness. It is preferably 2 μm or less. Although the lower limit of the average particle size is not particularly limited, it is preferably 0.01 μm or more, more preferably 0.05 μm or more, and still more preferably 0.1 μm or more. The average particle size of the inorganic filler can be measured in the same manner as for the component (C). Examples of commercially available inorganic fillers having such an average particle size include “YC100C”, “YA050C”, “YA050C-MJE” and “YA010C” manufactured by Admatechs, and “UFP-30” manufactured by Denki Kagaku Kogyo. ”, Tokuyama “Sylfil NSS-3N”, “Silfil NSS-4N”, “Sylfil NSS-5N”, Admatechs “SC2500SQ”, “SO-C6”, “SO-C4”, “SO-C2 ”, “SO-C1” and the like.

Inorganic fillers include aminosilane-based coupling agents, epoxysilane-based coupling agents, mercaptosilane-based coupling agents, silane-based coupling agents, alkoxysilane compounds, organosilazane compounds, titanates, from the viewpoint of improving moisture resistance and dispersibility. It is preferably treated with one or more surface treatment agents such as a system coupling agent. Specific commercially available surface treatment agents are as described above.

When the resin composition contains component (F), the content of component (F) in the resin composition is not particularly limited. It is 1% by mass or more, more preferably 0.5% by mass or more, and still more preferably 1% by mass or more. The upper limit is preferably 5% by mass or less, more preferably 4% by mass or less, and even more preferably 3% by mass or less.

<(G) Flame Retardant>
The resin composition may contain (G) a flame retardant. Examples of flame retardants include organic phosphorus flame retardants, organic nitrogen-containing phosphorus compounds, nitrogen compounds, silicone flame retardants, and metal hydroxides. A flame retardant may be used individually by 1 type, or may use 2 or more types together.

As the flame retardant, a commercially available product may be used, and examples thereof include “HCA-HQ” manufactured by Sanko Co., Ltd. and the like.

When the resin composition contains a flame retardant, the content of the flame retardant is not particularly limited. It is preferably 0.5% by mass to 5% by mass, more preferably 0.5% by mass to 3% by mass.

<(H) Optional Additives>
The resin composition may further contain other additives as necessary, such other additives as, for example, organometallic compounds such as organocopper compounds, organozinc compounds and organocobalt compounds, Also included are resin additives such as binders, thickeners, antifoaming agents, leveling agents, adhesion imparting agents, and colorants.

<Physical properties of the resin composition>
A cured product obtained by thermally curing the resin composition of the present invention at 180° C. for 90 minutes exhibits excellent peel strength to the metal layer. Specifically, when the resin composition of the present invention is laminated on a metal layer and then thermally cured at 180° C. for 90 minutes, the peel strength between the cured product and the metal layer is excellent. The peel strength is preferably 0.4 kgf/cm or more, more preferably 0.45 kgf/cm or more, and still more preferably 0.5 kgf/cm or more. On the other hand, the upper limit of the peel strength is not particularly limited, but may be 1.5 kgf/cm or less, 1 kgf/cm or less, or the like. The peel strength can be evaluated according to the method described in <Measurement and Evaluation of Peel Strength (Peel Strength) of Copper Foil> below.
The metal layer is preferably a metal layer containing copper, more preferably an electrolytic copper foil.

A cured product obtained by thermally curing the resin composition of the present invention at 180° C. for 90 minutes exhibits excellent thermal conductivity. The thermal conductivity is preferably 1.5 W/m·K or more, more preferably 1.8 W/m·K or more, and still more preferably 2.0 W/m·K or more. The upper limit of thermal conductivity may be 5.0 W/m·K or less, 4.0 W/m·K or less, or 3.5 W/m·K or less. Thermal conductivity can be evaluated according to the method described in <Measurement of Thermal Conductivity of Cured Material> below.

INDUSTRIAL APPLICABILITY The resin composition of the present invention can provide an insulating layer having excellent thermal conductivity and peel strength, and since it contains component (B), it has good compatibility with component (A). Therefore, the resin composition of the present invention is a resin composition for forming an insulating layer of a semiconductor chip package (a resin composition for an insulating layer of a semiconductor chip package) and an insulating layer of a circuit board (including a printed wiring board). It can be suitably used as a resin composition (resin composition for an insulating layer of a circuit board) for forming an interlayer insulating layer on which a conductor layer is formed by plating (plating It can be further preferably used as an interlayer insulating layer resin composition) of a circuit board forming a conductor layer by.
It is also suitable as a resin composition for sealing a semiconductor chip (semiconductor chip sealing resin composition) and a resin composition for forming wiring on a semiconductor chip (semiconductor chip wiring forming resin composition). can be used.

In the resin component contained in the resin composition, when the total mass of the high molecular weight component is A and the total mass of the low molecular weight component is B, A / (A + B) preferably satisfies 0.15 or more, and 0 It is more preferable to satisfy 0.20 or more, and it is further preferable to satisfy 0.25 or more. Although the lower limit is not particularly limited, it is preferably 0.60 or less, more preferably 0.55 or less, and even more preferably 0.50 or less. Here, the term "high molecular weight component" refers to a resin component contained in a resin composition having a weight average molecular weight of 10,000 or more, and the term "low molecular weight component" refers to a resin component contained in a resin composition having a weight average molecular weight of 5,000 or less. Say. The method for measuring the weight average molecular weight is as described above.

[Resin sheet]
The resin sheet of the present invention comprises a support and a resin composition layer bonded to the support, and the resin composition layer comprises the resin composition of the present invention.

The thickness of the resin composition layer is preferably 200 μm or less, more preferably 150 μm or less, even more preferably 100 μm or less, 80 μm or less, 60 μm or less, 50 μm or less, or 40 μm or less from the viewpoint of thinning. Although the lower limit of the thickness of the resin composition layer is not particularly limited, it can be usually 1 μm or more, 5 μm or more, or 10 μm or more.

Examples of the support include a film made of a plastic material, a metal foil, and a release paper, and a film made of a plastic material and a metal foil are preferable.

When a film made of a plastic material is used as the support, examples of the plastic material include polyethylene terephthalate (hereinafter sometimes abbreviated as "PET") and polyethylene naphthalate (hereinafter sometimes abbreviated as "PEN"). ), polycarbonate (hereinafter sometimes abbreviated as "PC"), acrylic such as polymethyl methacrylate (PMMA), cyclic polyolefin, triacetyl cellulose (TAC), polyether sulfide (PES), polyether ketones, polyimides, and the like. Among them, polyethylene terephthalate and polyethylene naphthalate are preferable, and inexpensive polyethylene terephthalate is particularly preferable.

When a metal foil is used as the support, examples of the metal foil include copper foil and aluminum foil, with copper foil being preferred. As the copper foil, a foil made of a single metal of copper may be used, and a foil made of an alloy of copper and other metals (for example, tin, chromium, silver, magnesium, nickel, zirconium, silicon, titanium, etc.) may be used. may be used.

The support may be subjected to matte treatment or corona treatment on the surface to be bonded to the resin composition layer.

Further, as the support, a support with a release layer having a release layer on the surface to be bonded to the resin composition layer may be used. The release agent used in the release layer of the release layer-attached support includes, for example, one or more release agents selected from the group consisting of alkyd resins, polyolefin resins, urethane resins, and silicone resins. . As the support with a release layer, a commercially available product may be used, for example, "SK-1" manufactured by Lintec Co., Ltd., "SK-1", " AL-5", "AL-7", Toray's "Lumirror T60", Teijin's "Purex", and Unitika's "Unipeel".

The thickness of the support is not particularly limited, but is preferably in the range of 5 μm to 75 μm, more preferably in the range of 10 μm to 60 μm. When a release layer-attached support is used, the thickness of the release layer-attached support as a whole is preferably within the above range.

For the resin sheet, for example, a resin varnish is prepared by dissolving a resin composition in an organic solvent, the resin varnish is applied onto a support using a die coater or the like, and dried to form a resin composition layer. It can be manufactured by

Since the resin composition of the present invention contains (C) a thermally conductive filler, even if the solid content concentration of the resin varnish is 85% by mass or more, it can be applied onto a support or the like, and can be molded into a sheet. It shows the characteristic that it can be done, that is, it has excellent filling properties. When the solid content concentration of the resin varnish is 85% by mass or more, the viscosity of the resin varnish is preferably 1.5 Pa s or less, more preferably 1.3 Pa s or less, and still more preferably 1.0 Pa s or less. is. Although the lower limit is not particularly limited, it may be 0.01 Pa·s or more. The viscosity of the resin varnish is a value measured with an E-type viscometer at 25°C.

Examples of organic solvents include ketones such as acetone, methyl ethyl ketone (MEK) and cyclohexanone, ethyl acetate, butyl acetate, cellosolve acetate, propylene glycol monomethyl ether acetate and carbitol acetate and other acetates, cellosolve and butyl carbitol. carbitols, aromatic hydrocarbons such as toluene and xylene, amide solvents such as dimethylformamide, dimethylacetamide (DMAc) and N-methylpyrrolidone. An organic solvent may be used individually by 1 type, and may be used in combination of 2 or more type.

Drying may be carried out by a known method such as heating or blowing hot air. The drying conditions are not particularly limited, but the resin composition layer is dried so that the content of the organic solvent is 10% by mass or less, preferably 5% by mass or less. Although it varies depending on the boiling point of the organic solvent in the resin varnish, for example, when using a resin varnish containing 30% by mass to 60% by mass of the organic solvent, drying at 50 ° C. to 150 ° C. for 3 minutes to 10 minutes The resin composition layer can be formed.

In the resin sheet, a protective film conforming to the support can be further laminated on the surface of the resin composition layer that is not bonded to the support (that is, the surface opposite to the support). Although the thickness of the protective film is not particularly limited, it is, for example, 1 μm to 40 μm. By laminating the protective film, it is possible to prevent dust from adhering to the surface of the resin composition layer and scratches on the surface of the resin composition layer. The resin sheet can be wound into a roll and stored. When the resin sheet has a protective film, it can be used by peeling off the protective film.

Instead of the resin sheet of the present invention, a prepreg formed by impregnating a sheet-like fiber base material with the resin composition of the present invention may be used.

The sheet-like fiber base material used for the prepreg is not particularly limited, and those commonly used as prepreg base materials such as glass cloth, aramid nonwoven fabric, and liquid crystal polymer nonwoven fabric can be used. From the viewpoint of thinning, the thickness of the sheet-like fiber base material is preferably 900 μm or less, more preferably 800 μm or less, still more preferably 700 μm or less, and even more preferably 600 μm or less. Although the lower limit of the thickness of the sheet-like fiber base material is not particularly limited, it can be usually 1 μm or more, 1.5 μm or more, 2 μm or more, or the like.

A prepreg can be manufactured by a known method such as a hot melt method or a solvent method.

The thickness of the prepreg can be in the same range as the resin composition layer in the resin sheet described above.

The resin sheet of the present invention can be suitably used for forming an insulating layer in the manufacture of semiconductor chip packages (insulating resin sheet for semiconductor chip packages). For example, the resin sheet of the present invention can be suitably used for forming an insulating layer of a circuit board (resin sheet for an insulating layer of a circuit board), and can be used for interlayer insulation in which a conductor layer is formed thereon by plating. It can be more suitably used for forming layers (for interlayer insulating layers of circuit boards on which conductive layers are formed by plating). Examples of packages using such substrates include FC-CSP, MIS-BGA packages, and ETS-BGA packages.

Further, the resin sheet of the present invention can be suitably used for encapsulating a semiconductor chip (semiconductor chip encapsulating resin sheet) or for forming wiring on a semiconductor chip (semiconductor chip wiring forming resin sheet). For example, it can be suitably used for fan-out type WLP (wafer level package), fan-in type WLP, fan-out type PLP (panel level package), fan-in type PLP and the like. It can also be suitably used as a MUF (Molding Under Filling) material used after connecting a semiconductor chip to a substrate.
The resin sheet of the present invention can also be suitably used for a wide range of other applications requiring high insulation reliability, for example, for forming insulating layers of circuit boards such as printed wiring boards.

[Circuit board]
The circuit board of the present invention includes an insulating layer formed from a cured product of the resin composition of the present invention.
The method for manufacturing a circuit board of the present invention comprises:
(1) A step of preparing a substrate with a wiring layer having a substrate and a wiring layer as a metal layer provided on at least one surface of the substrate;
(2) A step of laminating the resin sheet of the present invention on a base material with a wiring layer so that the wiring layer is embedded in the resin composition layer, followed by thermal curing to form an insulating layer;
(3) A step of connecting wiring layers between layers is included. Moreover, the method for manufacturing a circuit board may include (4) a step of removing the base material.

The step (3) is not particularly limited as long as a wiring layer other than a wiring layer as a metal layer can be connected between layers, but a via hole is formed in an insulating layer to form a wiring layer, and the insulating layer is polished. Alternatively, at least one of the steps of grinding and exposing the wiring layer is preferable.

<Step (1)>
Step (1) is a step of preparing a substrate with a wiring layer, which has a substrate and a wiring layer provided on at least one surface of the substrate. Usually, a substrate with a wiring layer has a first metal layer and a second metal layer, which are part of the substrate, on both sides of the substrate. It has a wiring layer on the surface. Specifically, a dry film (photosensitive resist film) is laminated on a base material, exposed under predetermined conditions using a photomask, and developed to form a patterned dry film. After forming a wiring layer by electroplating using the developed patterned dry film as a plating mask, the patterned dry film is peeled off. Note that the first metal layer and the second metal layer may not be provided.

Examples of the base material include substrates such as glass epoxy substrates, metal substrates (stainless steel, cold-rolled steel plate (SPCC), etc.), polyester substrates, polyimide substrates, BT resin substrates, and thermosetting polyphenylene ether substrates. A metal layer such as copper foil may be formed on the surface. In addition, even if a metal layer such as a peelable first metal layer and a second metal layer (for example, ultra-thin copper foil with carrier copper foil manufactured by Mitsui Kinzoku Co., Ltd., trade name "Micro Thin") is formed on the surface good.

The dry film is not particularly limited as long as it is a photosensitive dry film made of a photoresist composition, and for example, dry films such as novolak resins and acrylic resins can be used. A commercially available dry film may be used.

The conditions for laminating the substrate and the dry film are the same as the conditions for laminating the resin sheet so as to be embedded in the wiring layer in the step (2) described below, and the preferred ranges are also the same.

After laminating the dry film on the substrate, exposure and development are performed using a photomask under predetermined conditions in order to form a desired pattern on the dry film.

The line (circuit width)/space (width between circuits) ratio of the wiring layer is not particularly limited, but is preferably 20/20 μm or less (that is, the pitch is 40 μm or less), more preferably 10/10 μm or less, further preferably 5/ It is 5 µm or less, more preferably 1/1 µm or less, and particularly preferably 0.5/0.5 µm or more. The pitch need not be the same throughout the wiring layer. The minimum pitch of the wiring layers may be 40 μm or less, 36 μm or less, or 30 μm or less.

After forming the dry film pattern, a wiring layer is formed and the dry film is peeled off. Here, the wiring layer can be formed by plating using a dry film having a desired pattern formed thereon as a plating mask.

The conductor material used for the wiring layer is not particularly limited. In a preferred embodiment, the wiring layer contains one or more selected from the group consisting of gold, platinum, palladium, silver, copper, aluminum, cobalt, chromium, zinc, nickel, titanium, tungsten, iron, tin and indium. Contains metal. The wiring layer may be a single metal layer or an alloy layer. The alloy layer may be, for example, an alloy of two or more metals selected from the above group (for example, a nickel-chromium alloy, a copper-chromium alloy, a nickel alloys and copper-titanium alloys). Among them, from the viewpoint of versatility of wiring layer formation, cost, ease of patterning, etc., single metal layers of chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver or copper, nickel-chromium alloys, copper- Nickel alloys and copper/titanium alloy alloy layers are preferred, and single metal layers of chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver or copper, or nickel/chromium alloy alloy layers are more preferred, and copper single metal layers are preferred. A metal layer is more preferred.

The thickness of the wiring layer is preferably 3 μm to 35 μm, more preferably 5 μm to 30 μm, still more preferably 10 to 20 μm, or 15 μm, depending on the desired wiring board design. In the step (3), when the insulating layer is polished or ground, the wiring layer is exposed, and a wiring layer different from the wiring layer as the metal layer is connected between the layers, the wiring to be connected between the layers is not connected. It is preferable that the thickness of the wiring is different. The thickness of the wiring layer can be adjusted by repeating the pattern formation described above. The thickness of the thickest wiring layer (conductive pillar) among the wiring layers is preferably 100 μm or less and 2 μm or more depending on the design of the desired wiring board. Moreover, the wiring for interlayer connection may be convex.

After forming the wiring layer, the dry film is peeled off. Stripping of the dry film can be carried out using, for example, an alkaline stripping solution such as sodium hydroxide solution. If necessary, a desired wiring pattern can be formed by removing unnecessary wiring patterns by etching or the like. The pitch of the wiring layers to be formed is as described above.

<Step (2)>
Step (2) is a step of laminating the resin sheet of the present invention on a base material with a wiring layer so that the wiring layer is embedded in the resin composition layer, followed by thermal curing to form an insulating layer. In detail, the wiring layer of the substrate with the wiring layer obtained in the above step (1) is laminated so as to be embedded in the resin composition layer of the resin sheet, and the resin composition layer of the resin sheet is thermally cured to insulate. form a layer.

Lamination of the wiring layer and the resin sheet can be performed by, for example, heating and press-bonding the resin sheet to the wiring layer from the support side after removing the protective film of the resin sheet. Examples of the member for thermocompression bonding of the resin sheet to the wiring layer (hereinafter also referred to as "thermocompression member") include heated metal plates (such as SUS end plates) and metal rolls (SUS rolls). Instead of pressing the thermocompression member directly onto the resin sheet, it is preferable to press the resin sheet through an elastic material such as heat-resistant rubber so that the resin sheet can sufficiently follow the uneven surface of the wiring layer.

Lamination of the wiring layer and the resin sheet may be carried out by a vacuum lamination method after removing the protective film of the resin sheet. In the vacuum lamination method, the thermocompression temperature is preferably in the range of 60° C. to 160° C., more preferably 80° C. to 140° C., and the thermocompression pressure is preferably 0.098 MPa to 1.77 MPa, more preferably 0. .29 MPa to 1.47 MPa, and the heat pressing time is preferably 20 seconds to 400 seconds, more preferably 30 seconds to 300 seconds. Lamination is preferably carried out under reduced pressure conditions of 13 hPa or less.

After lamination, the laminated resin sheets may be smoothed under normal pressure (atmospheric pressure), for example, by pressing a thermocompression member from the support side. The pressing conditions for the smoothing treatment may be the same as the thermocompression bonding conditions for the lamination described above. Lamination and smoothing may be performed continuously using the above-mentioned commercially available vacuum laminator.

After laminating the resin composition layer on the substrate with the wiring layer so that the wiring layer is embedded, the resin composition layer is thermally cured to form an insulating layer. For example, the thermosetting conditions for the resin composition layer may vary depending on the type of resin composition, but the curing temperature may be in the range of 120° C. to 240° C., and the curing time may be in the range of 5 minutes to 120 minutes. Before thermosetting the resin composition layer, the resin composition layer may be preheated at a temperature lower than the curing temperature.

The support of the resin sheet may be peeled off after the resin sheet is laminated on the substrate with the wiring layer and thermally cured, or the support may be peeled off before laminating the resin sheet on the substrate with the wiring layer. good. Moreover, the support may be peeled off before the roughening treatment step described later.

<Step (3)>
Step (3) is a step of connecting wiring layers between layers. Specifically, it is a step of forming via holes in the insulating layer, forming a conductor layer, and connecting the wiring layers between layers. Alternatively, it is a step of polishing or grinding the insulating layer to expose the wiring layer and connecting the wiring layer different from the metal layer.

In the case of adopting a process of forming a via hole in an insulating layer, forming a conductor layer, and connecting a wiring layer between layers, the formation of the via hole is not particularly limited. preferably performed by This laser irradiation can be performed using any suitable laser processing machine using a carbon dioxide gas laser, a YAG laser, an excimer laser, or the like as a light source. Specifically, laser irradiation is performed from the surface side of the support of the resin sheet to form a via hole that penetrates the support and the insulating layer and exposes the wiring layer.

The conditions for laser irradiation are not particularly limited, and laser irradiation can be carried out by any suitable process according to conventional methods according to the means selected.

The shape of the via hole, that is, the shape of the contour of the opening when viewed in the extending direction is not particularly limited, but is generally circular (substantially circular).

After forming the via hole, a so-called desmear process, which is a process for removing smear in the via hole, may be performed. When the conductor layer to be described later is formed by a plating process, the via hole may be subjected to, for example, a wet desmear treatment. A dry desmear step may be performed. Moreover, the desmearing process may serve as the roughening treatment process.

Before forming the conductor layer, the via hole and the insulating layer may be roughened. Roughening treatment can employ known procedures and conditions that are usually performed. Examples of dry roughening treatment include plasma treatment, and examples of wet roughening treatment include swelling treatment with a swelling liquid, roughening treatment with an oxidizing agent, and neutralization treatment with a neutralizing liquid in this order. is mentioned.

After forming the via holes, a conductor layer is formed. The conductor material constituting the conductor layer is not particularly limited, and the conductor layer can be formed by any suitable conventionally known method such as plating, sputtering, vapor deposition, etc., and is preferably formed by plating. In one preferred embodiment, for example, a conductor layer having a desired wiring pattern can be formed by plating the surface of the insulating layer by a conventionally known technique such as a semi-additive method or a full-additive method. Further, when the support in the resin sheet is a metal foil, a conductive layer having a desired wiring pattern can be formed by a conventionally known technique such as a subtractive method. The conductor layer may have a single layer structure or a multi-layer structure in which two or more single metal layers or alloy layers made of different kinds of metals or alloys are laminated.

Specifically, a plating seed layer is formed on the surface of the insulating layer by electroless plating. Next, a mask pattern is formed on the formed plating seed layer to expose a portion of the plating seed layer corresponding to a desired wiring pattern. An electrolytic plated layer is formed on the exposed plating seed layer by electrolytic plating. At that time, along with the formation of the electroplated layer, the via hole may be filled by electroplating to form a filled via. After forming the electrolytic plating layer, the mask pattern is removed. After that, the unnecessary plating seed layer is removed by etching or the like, and a conductor layer having a desired wiring pattern can be formed. The dry film used for forming the mask pattern when forming the conductor layer is the same as the dry film described above.

The conductor layer can include not only linear wiring but also electrode pads (lands) on which external terminals can be mounted, for example. Alternatively, the conductor layer may be composed only of the electrode pads.

Alternatively, the conductor layer may be formed by forming an electrolytic plating layer and filled vias without using a mask pattern after forming a plating seed layer, and then patterning by etching.

In the case of adopting the step of polishing or grinding the insulating layer to expose the wiring layer as the metal layer and connect the wiring layer other than the metal layer between layers, the method of polishing or grinding the insulating layer is to polish or grind the wiring layer. It is not particularly limited as long as it can be exposed and the polishing or grinding surface is horizontal, and conventionally known polishing methods or grinding methods can be applied. Examples include a mechanical polishing method and a surface grinding method by rotating a whetstone. A smear removal step and a roughening treatment step may be performed in the same manner as the step of forming via holes in an insulating layer, forming a conductor layer, and connecting wiring layers between layers, or a conductor layer may be formed. Moreover, it is not necessary to expose all the wiring layers as metal layers, and a part of the wiring layers as metal layers may be exposed.

<Step (4)>
Step (4) is a step of removing the base material to form the circuit board of the present invention. A method for removing the substrate is not particularly limited. In one preferred embodiment, the substrate is stripped from the circuit board at the interface of the first and second metal layers, and the second metal layer is etched away, such as with an aqueous copper chloride solution. If necessary, the substrate may be peeled off while the conductor layer is protected with a protective film.

[Semiconductor chip package]
A first aspect of the semiconductor chip package of the present invention is a semiconductor chip package in which a semiconductor chip is mounted on the circuit board of the present invention. A semiconductor chip package can be manufactured by bonding a semiconductor chip to the circuit board of the present invention.

As long as the terminal electrodes of the semiconductor chip are conductively connected to the circuit wiring of the circuit board, the bonding conditions are not particularly limited, and known conditions used in flip-chip mounting of semiconductor chips may be used. Alternatively, the semiconductor chip and the circuit board may be bonded via an insulating adhesive.

One preferred embodiment crimps the semiconductor chip to the circuit board. As the crimping conditions, for example, the crimping temperature is in the range of 120° C. to 240° C. (preferably 130° C. to 200° C., more preferably 140° C. to 180° C.), and the crimping time is in the range of 1 second to 60 seconds. (preferably 5 seconds to 30 seconds).

Another preferred embodiment reflows and joins the semiconductor chip to the circuit board. The reflow conditions can be, for example, in the range of 120.degree. C. to 300.degree.

It is also possible to obtain a semiconductor chip package by, for example, filling the semiconductor chip with a mold underfill material after bonding the semiconductor chip to the circuit board. The method of filling with the mold underfill material can be carried out by a known method. The resin composition or resin sheet of the present invention can also be used as a mold underfill material.

A second aspect of the semiconductor chip package of the present invention is, for example, a semiconductor chip package (fan-out type WLP) as shown in FIG. A semiconductor chip package (fan-out type WLP) 100 such as one example shown in FIG. 1 is a semiconductor chip package in which a sealing layer 120 is manufactured from the resin composition or resin sheet of the present invention. The semiconductor chip package 100 includes a semiconductor chip 110, a sealing layer 120 formed to cover the periphery of the semiconductor chip 110, and rewiring formed on the surface of the semiconductor chip 110 opposite to the side covered with the sealing layer. It includes a layer (insulating layer) 130 , a conductor layer (rewiring layer) 140 , a solder resist layer 150 and bumps 160 . A method for manufacturing such a semiconductor chip package includes:
(A) a step of laminating a temporary fixing film on a substrate;
(B) temporarily fixing the semiconductor chip on the temporary fixing film;
(C) a step of laminating the resin composition layer of the resin sheet of the present invention on a semiconductor chip, or applying the resin composition of the present invention onto a semiconductor chip and heat-curing to form a sealing layer;
(D) a step of peeling the substrate and the temporary fixing film from the semiconductor chip;
(E) forming a rewiring layer (insulating layer) on the surface of the semiconductor chip from which the substrate and the temporary fixing film have been removed;
(F) forming a conductor layer (rewiring layer) on the rewiring layer (insulating layer); and (G) forming a solder resist layer on the conductor layer. Also, the method of manufacturing a semiconductor chip package may include the step of (H) dicing the plurality of semiconductor chip packages into individual semiconductor chip packages to separate them into individual pieces.

<Step (A)>
Step (A) is a step of laminating a temporary fixing film on a substrate. The conditions for laminating the substrate and the temporary fixing film are the same as the conditions for laminating the wiring layer and the resin sheet in step (2) in the method for producing a circuit board, and the preferred ranges are also the same.

The material used for the base material is not particularly limited. Examples of substrates include silicon wafers; glass wafers; glass substrates; metal substrates such as copper, titanium, stainless steel, and cold-rolled steel plates (SPCC); 4 substrate); and a substrate made of bismaleimide triazine resin (BT resin).

The material of the temporary fixing film is not particularly limited as long as it can be peeled off from the semiconductor chip in step (D) described below and can temporarily fix the semiconductor chip. A commercially available product can be used as the temporary fixing film. Commercially available products include Riva Alpha manufactured by Nitto Denko Corporation.

<Step (B)>
Step (B) is a step of temporarily fixing the semiconductor chip on the temporary fixing film. Temporarily fixing the semiconductor chip can be performed using a known device such as a flip chip bonder and a die bonder. The layout and the number of arrangement of the semiconductor chips can be appropriately set according to the shape and size of the temporary fixing film, the production number of the target semiconductor package, etc. For example, a matrix of multiple rows and multiple columns can be aligned and temporarily fixed.

<Step (C)>
The step (C) is a step of laminating the resin composition layer of the resin sheet of the invention on a semiconductor chip, or applying the resin composition of the invention onto a semiconductor chip and thermally curing it to form a sealing layer. be. In step (C), the resin composition layer of the resin sheet of the present invention is preferably laminated on a semiconductor chip and thermally cured to form a sealing layer.

After removing the protective film of the resin sheet, the semiconductor chip and the resin sheet can be laminated by, for example, heating and press-bonding the resin sheet to the semiconductor chip from the support side. Examples of the member for thermocompression bonding the resin sheet to the semiconductor chip (hereinafter also referred to as "thermocompression member") include a heated metal plate (such as a SUS panel) or a metal roll (SUS roll). Instead of directly pressing the thermocompression member against the resin sheet, it is preferable to press the resin sheet through an elastic material such as heat-resistant rubber so that the resin sheet can sufficiently follow the unevenness of the surface of the semiconductor chip.

Moreover, lamination of the semiconductor chip and the resin sheet may be carried out by a vacuum lamination method after removing the protective film of the resin sheet. The lamination conditions in the vacuum lamination method are the same as the lamination conditions of the wiring layer and the resin sheet in the step (2) of the circuit board production method, and the preferred ranges are also the same.

The support of the resin sheet may be peeled off after the resin sheet is laminated on the semiconductor chip and thermally cured, or the support may be peeled off before the resin sheet is laminated on the semiconductor chip.

The application conditions for the resin composition are the same as those for forming the resin composition layer in the resin sheet of the present invention, and the preferred ranges are also the same.

<Step (D)>
Step (D) is a step of peeling off the substrate and the temporary fixing film from the semiconductor chip. The peeling method can be changed as appropriate depending on the material of the temporary fixing film, for example, a method of heating and foaming (or expanding) the temporary fixing film to peel it off, and a method of irradiating ultraviolet rays from the substrate side, A method of reducing the adhesive force of the temporary fixing film and peeling it off is included.

In the method of heating and foaming (or expanding) the temporary fixing film to separate it, the heating conditions are usually 100° C. to 250° C. for 1 second to 90 seconds or 5 minutes to 15 minutes. In the method of removing the adhesive force of the temporary fixing film by irradiating it with ultraviolet rays from the substrate side, the irradiation dose of ultraviolet rays is usually 10 mJ/cm ² to 1000 mJ/cm ² .

<Step (E)>
Step (E) is a step of forming a rewiring forming layer (insulating layer) on the surface of the semiconductor chip from which the substrate and the temporary fixing film have been removed.

The material for forming the rewiring layer (insulating layer) is not particularly limited as long as it has insulating properties when the rewiring layer (insulating layer) is formed. Photosensitive resins and thermosetting resins are preferred. As the thermosetting resin, a resin composition having the same composition as the resin composition for forming the resin sheet of the present invention may be used.

After forming the rewiring layer (insulating layer), a via hole may be formed in the rewiring layer (insulating layer) for interlayer connection between the semiconductor chip and a conductor layer to be described later.

In forming the via hole, if the material forming the rewiring formation layer (insulating layer) is a photosensitive resin, first, the surface of the rewiring formation layer (insulating layer) is irradiated with active energy rays through a mask pattern. The uppermost wiring layer of the part is photo-cured.

Examples of active energy rays include ultraviolet rays, visible rays, electron beams, and X-rays, and ultraviolet rays are particularly preferred. The irradiation amount and irradiation time of ultraviolet rays can be appropriately changed according to the photosensitive resin. As for the exposure method, there is a contact exposure method in which the mask pattern is brought into close contact with the rewiring formation layer (insulating layer) and then exposure is performed using parallel rays without making the mask pattern in close contact with the rewiring formation layer (insulating layer). Any non-contact exposure method may be used.

Next, the rewiring formation layer (insulating layer) is developed and the unexposed portion is removed to form a via hole. Both wet development and dry development are suitable for development. A known developer can be used as the developer used in the wet development.

The development method includes, for example, a dipping method, a paddle method, a spray method, a brushing method, a scraping method, and the like, and the paddle method is preferable from the viewpoint of resolution.

When the material for forming the rewiring layer (insulating layer) is a thermosetting resin, the formation of the via hole is not particularly limited, but laser irradiation, etching, mechanical drilling, etc., can be mentioned. preferable. Laser irradiation can be performed using any suitable laser processing machine using a carbon dioxide gas laser, UV-YAG laser, excimer laser, or the like as a light source.

The conditions for laser irradiation are not particularly limited, and laser irradiation can be carried out by any suitable process according to conventional methods according to the means selected.

The shape of the via hole, that is, the shape of the contour of the opening when viewed in the extending direction is not particularly limited, but is generally circular (substantially circular). The top diameter of the via hole (the diameter of the opening on the surface of the rewiring layer (insulating layer)) is preferably 50 μm or less, more preferably 30 μm or less, and even more preferably 20 μm or less. Although the lower limit is not particularly limited, it is preferably 10 μm or more, more preferably 15 μm or more, and still more preferably 20 μm or more.

<Step (F)>
Step (F) is a step of forming a conductor layer (rewiring layer) on the rewiring formation layer (insulating layer). The method of forming the conductor layer on the rewiring formation layer (insulating layer) is the same as the method of forming the conductor layer after forming via holes in the insulating layer in step (3) in the method for manufacturing a circuit board, and is preferable. The same applies to the range. The steps (E) and (F) may be repeated to alternately build up the conductor layers (rewiring layers) and the rewiring formation layers (insulating layers) (build-up).

<Step (G)>
Step (G) is a step of forming a solder resist layer on the conductor layer.

The material for forming the solder resist layer is not particularly limited as long as it has insulating properties when the solder resist layer is formed. From the viewpoint of ease of manufacturing semiconductor chip packages, photosensitive resins and thermosetting resins are preferable. . As the thermosetting resin, a resin composition having the same composition as the resin composition for forming the resin sheet of the present invention may be used.

Moreover, in the step (G), a bumping process for forming bumps may be performed as necessary. Bumping can be performed by a known method such as solder balls or solder plating. Formation of via holes in the bumping process can be performed in the same manner as in step (E).

<Step (H)>
The method for manufacturing a semiconductor chip package may include step (H) in addition to steps (A) to (G). Step (H) is a step of dicing a plurality of semiconductor chip packages into individual semiconductor chip packages to separate them into pieces.

A method for dicing the semiconductor chip package into individual semiconductor chip packages is not particularly limited, and a known method can be used.

In a third aspect of the semiconductor chip package of the present invention, for example, a rewiring formation layer (insulating layer) 130 and a solder resist layer 150 in a semiconductor chip package (fan-out type WLP) as shown in FIG. A semiconductor chip package manufactured from the resin composition or resin sheet of the invention.

[Semiconductor device]
Semiconductor devices to be mounted with the semiconductor chip package of the present invention include electrical products (e.g., computers, mobile phones, smartphones, tablet devices, wearable devices, digital cameras, medical equipment, televisions, etc.) and vehicles ( Examples include various semiconductor devices used in motorcycles, automobiles, trains, ships, aircraft, etc.).

EXAMPLES The present invention will be specifically described below by way of examples, but the present invention is not limited to these examples. In the following description, "parts" and "%" mean "mass parts" and "mass%", respectively, unless otherwise specified.

<Preparation of sample for peel strength measurement>
(1) Surface treatment of inner layer circuit board Both sides of a glass cloth-based epoxy resin double-sided copper-clad laminate (copper foil thickness 18 μm, substrate thickness 0.3 mm, Panasonic R5715ES) on which an inner layer circuit is formed are coated with MEC Co., Ltd. The copper surface was roughened by immersion in CZ8100.

(2) Preparation of resin sheet The resin varnishes prepared in Examples and Comparative Examples were released with an alkyd resin release agent ("AL-5" manufactured by Lintec) PET films ("Lumirror R80" manufactured by Toray Industries, Inc., Thickness 38 μm, softening point 130° C., hereinafter sometimes referred to as “release PET”). C. (average 90.degree. C.) for 7 minutes to obtain a resin sheet.

(3) Lamination of resin sheet The resin composition layer is bonded to the inner layer circuit board using a batch type vacuum pressure laminator (2-stage build-up laminator "CVP700" manufactured by Nikko Materials Co., Ltd.). were laminated on both sides of the inner layer circuit board. Lamination was carried out by pressure bonding for 30 seconds at 120° C. and pressure of 0.74 MPa after reducing the pressure to 13 hPa or less for 30 seconds. Then, hot pressing was performed at 120° C. and a pressure of 0.5 MPa for 60 seconds.

(4) Lamination with a metal layer (copper foil) After that, the support is peeled off, and electrolytic A copper foil (“JTCP” manufactured by JX Nippon Mining & Metals Co., Ltd., thickness 35 μm, maximum height of roughened surface (Rz: JIS B0601-2001): 6 μm) was laminated. Subsequently, lamination was carried out under the same conditions using the above laminator.

(5) Curing of Resin Composition After lamination, the resin composition layer was cured under curing conditions of 180° C. for 90 minutes.

<Measurement and Evaluation of Peeling Strength (Peel Strength) of Copper Foil>
A cut of 10 mm in width and 100 mm in length was made in the electrolytic copper foil, one end of which was peeled off and gripped with a gripper (Autocom type testing machine "AC-50C-SL" manufactured by TSE Co., Ltd.), Peel strength was obtained by measuring the load (kgf/cm) when peeling off 20 mm in the vertical direction at a rate of 50 mm/min at room temperature.

<Measurement of thermal conductivity of cured product>
(1) Preparation of cured product sample PET film ("Lumirror R80" manufactured by Toray Industries, Inc.) obtained by releasing the resin varnish prepared in Examples and Comparative Examples with an alkyd resin-based release agent ("AL-5" manufactured by Lintec) , Thickness 38 μm, softening point 130° C., hereinafter sometimes referred to as “release PET”). A resin sheet was obtained by drying at 100° C. (average 90° C.) for 7 minutes.

The prepared resin sheet is laminated with three resin composition layers using a batch-type vacuum pressure laminator (2-stage build-up laminator "CVP700" manufactured by Nikko Materials Co., Ltd.), and then heated at 180 ° C. for 90 minutes. The resin composition layer was cured under curing conditions to obtain a sample. The laminate was depressurized for 30 seconds to an air pressure of 13 hPa or less, and then pressed for 20 seconds at 120° C. and a pressure of 0.4 MPa to obtain a cured product sample.

(2) Measurement of thermal diffusivity α For the cured product sample, the thermal diffusivity α ( ^m / s) in the thickness direction of the cured product sample was measured using "ai-Phase Mobile 1u" manufactured by ai-Phase. It was measured by the temperature wave analysis method. The same sample was measured three times, and the average value was calculated.

(3) Measurement of specific heat capacity Cp For the cured product sample, using a differential scanning calorimeter ("DSC7020" manufactured by SII Nano Technology Co., Ltd.), the temperature is increased from -40 ° C. to 80 ° C. at 10 ° C./min and measured. The specific heat capacity Cp (J/kg·K) of the cured product sample at 25°C was calculated.

(4) Measurement of Density ρ The density (kg/m ³ ) of the cured product sample was measured using an analytical balance XP105 (using a specific gravity measurement kit) manufactured by Mettler Toledo.

(5) Calculation of thermal conductivity λ Thermal diffusivity α (m ² /s), specific heat capacity Cp (J/kg K), and density ρ (kg/m ³ ) was substituted into the following formula (I) to calculate the thermal conductivity λ (W/m·K).
λ=α×Cp×ρ (I)

<Evaluation of fillability>
Resin varnishes were prepared so that the solid content concentration of the resin varnishes produced in Examples and Comparative Examples was 85% by mass or more, and release treatment was performed with an alkyd resin release agent ("AL-5" manufactured by Lintec Co., Ltd.). A PET film (“Lumirror R80” manufactured by Toray Industries, Inc., thickness 38 μm, softening point 130° C., hereinafter sometimes referred to as “releasing PET”) was coated so that the thickness of the resin composition layer after drying was 100 μm. It was applied with a die coater. ○ when it was possible to mold into a sheet without problems, △ when the resin varnish viscosity exceeded 1.5 Pa s (25 ° C, E-type viscometer) and the moldability was poor and streaks appeared, resin varnish viscosity was over 2.5 Pa·s (25°C, E-type viscometer), and the case where the sheet could not be formed was rated as x.

<Synthesis Example 1: Synthesis of Elastomer 1>
G-3000 (bifunctional hydroxyl group-terminated polybutadiene, number average molecular weight = 5047 (GPC method), hydroxyl group equivalent = 1798 g / eq., solid content 100% by mass: manufactured by Nippon Soda Co., Ltd.) 69 g and Ipsol 150 in a reaction vessel (Aromatic hydrocarbon-based mixed solvent: manufactured by Idemitsu Petrochemical Co., Ltd.) 40 g and dibutyltin laurate 0.005 g were mixed and uniformly dissolved. When the mixture became uniform, the temperature was raised to 50° C., and while stirring, 8 g of isophorone diisocyanate (IPDI, isocyanate group equivalent=113 g/eq., manufactured by Evonik Degussa Japan) was added and reacted for about 3 hours. Next, after cooling the reactant to room temperature, 23 g of cresol novolac resin (KA-1160, manufactured by DIC, hydroxyl group equivalent = 117 g/eq.) and 60 g of ethyl diglycol acetate (manufactured by Daicel) were added. Then, the temperature was raised to 80° C. while stirring, and the reaction was carried out for about 4 hours. The disappearance of the NCO peak at 2250 cm ⁻¹ was confirmed by FT-IR. Confirmation of the disappearance of the NCO peak was regarded as the end point of the reaction, and the reactant was cooled to room temperature and filtered through a 100-mesh filter cloth to obtain elastomer 1 having a polybutadiene structure and phenolic hydroxyl groups (50% by mass of non-volatile content). rice field. The number average molecular weight was 5,500.

<Synthesis Example 2: Synthesis of Elastomer 2>
G-3000 (bifunctional hydroxyl group-terminated polybutadiene, number average molecular weight = 5047 (GPC method), hydroxyl group equivalent = 1798 g / eq., solid content 100% by mass: manufactured by Nippon Soda Co., Ltd.) 50 g and Ipsol 150 in a reaction vessel (Aromatic hydrocarbon-based mixed solvent: manufactured by Idemitsu Petrochemical Co., Ltd.) 23.5 g and dibutyltin laurate 0.005 g were mixed and uniformly dissolved. When the mixture became uniform, the temperature was raised to 50° C., and while stirring, 4.8 g of toluene-2,4-diisocyanate (isocyanate group equivalent=87.08 g/eq.) was added and reacted for about 3 hours. The reaction was then allowed to cool to room temperature before adding 8.96 g of benzophenonetetracarboxylic dianhydride (anhydride equivalent = 161.1 g/eq.), 0.07 g of triethylenediamine, and ethyl diglycol. 40.4 g of acetate (manufactured by Daicel) was added, the temperature was raised to 130° C. with stirring, and the reaction was carried out for about 4 hours. The disappearance of the NCO peak at 2250 cm ⁻¹ was confirmed by FT-IR. Confirmation of the disappearance of the NCO peak was regarded as the end point of the reaction, and the reaction product was cooled to room temperature and filtered through a 100-mesh filter cloth to obtain elastomer 2 having an imide structure, a urethane structure, and a polybutadiene structure (nonvolatile content: 50% by mass). ). The number average molecular weight was 13,700.

<Measurement of average particle size of thermally conductive filler>
0.01 g of a thermally conductive filler, 0.2 g of a nonionic dispersant (“T208.5” manufactured by NOF Corporation), and 10 g of pure water are added to a 20 ml vial, and ultrasonically dispersed for 10 minutes with an ultrasonic cleaner. was performed to prepare the samples. Next, the sample was placed in a laser diffraction particle size distribution analyzer (“SALD2200” manufactured by Shimadzu Corporation) and irradiated with ultrasonic waves for 10 minutes while being circulated. After that, the ultrasonic wave was stopped, and the particle size distribution was measured while the circulation of the sample was maintained to obtain the average particle size of the thermally conductive filler. The refractive index during measurement was set to 1.45-0.001i.

<Measurement of specific surface area of thermally conductive filler>
The specific surface area was determined by the nitrogen BET method using an automatic specific surface area measuring device ("Macsorb HM-1210" manufactured by Mountec).

<Thermal conductive filler used>
Alumina 1: Alumina having different average particle sizes and specific surface areas were mixed to prepare an average particle size of 4.2 μm and a specific surface area of 0.8 m ² /g.
Alumina 2: Alumina having different average particle sizes and specific surface areas were mixed to prepare an average particle size of 3.0 μm and a specific surface area of 1.5 m ² /g.
Alumina 3: Alumina with an average particle size of 4 μm ("CB-P05" manufactured by Showa Denko Co., Ltd., specific surface area 0.7 m ² /g)
Alumina 4: Alumina with an average particle size of 2 μm (“CB-P02” manufactured by Showa Denko Co., Ltd., specific surface area 1.1 m ² /g)

<Example 1>
High resilience epoxy resin ("YX7400" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 440 g / eq) 4 parts, liquid epoxy resin ("ZX1059" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., one of bisphenol A type epoxy resin and bisphenol F type epoxy resin : 1 mixture (mass ratio), epoxy equivalent: 169 g / eq) 3 parts, bixylenol type epoxy resin (manufactured by Mitsubishi Chemical Corporation "YX4000HK", epoxy equivalent: 185 g / eq) 2 parts are dissolved in 10 parts of cyclohexanone, 215 parts of alumina 1, 20 parts of elastomer 1 (solid content 50% by mass, number average molecular weight 5500), solid naphthol-based curing agent ("SN485" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., hydroxyl equivalent 215, solid content 50% MEK solution ) 6 parts, a curing accelerator (4-dimethylaminopyridine (DMAP), MEK solution with a solid content of 5% by mass) 3 parts, and 15 parts of methyl ethyl ketone are mixed and uniformly dispersed in a high-speed rotating mixer to prepare a resin varnish. bottom.

<Example 2>
High resilience epoxy resin ("YX7400" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 440 g / eq) 6 parts, liquid epoxy resin ("ZX1059" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., one of bisphenol A type epoxy resin and bisphenol F type epoxy resin : 1 mixture (mass ratio), epoxy equivalent: 169 g / eq) 2 parts, bixylenol type epoxy resin (manufactured by Mitsubishi Chemical Corporation "YX4000HK", epoxy equivalent: 185 g / eq) 2 parts are dissolved in 10 parts of cyclohexanone, 210 parts of alumina 2, 20 parts of elastomer 1 (solid content 50% by mass, number average molecular weight 5500), solid naphthol-based curing agent ("SN485" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., hydroxyl equivalent 215, solid content 50% MEK solution ) 6 parts, a curing accelerator (4-dimethylaminopyridine (DMAP), MEK solution with a solid content of 5% by mass) 3 parts, and 15 parts of methyl ethyl ketone are mixed and uniformly dispersed in a high-speed rotating mixer to prepare a resin varnish. bottom.

<Example 3>
High resilience epoxy resin ("YX7400" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 440 g / eq) 4 parts, liquid epoxy resin ("ZX1059" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., one of bisphenol A type epoxy resin and bisphenol F type epoxy resin : 1 mixture (mass ratio), epoxy equivalent: 169 g / eq) 4 parts, bixylenol type epoxy resin (manufactured by Mitsubishi Chemical Corporation "YX4000HK", epoxy equivalent: 185 g / eq) 2 parts are dissolved in 10 parts of cyclohexanone, 210 parts of alumina 2, 24 parts of elastomer 1 (solid content 50% by mass, number average molecular weight 5500), solid naphthol-based curing agent ("SN485" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., hydroxyl equivalent 215, solid content 50% MEK solution ) 6 parts, a curing accelerator (4-dimethylaminopyridine (DMAP), MEK solution with a solid content of 5% by mass) 3 parts, and 13 parts of methyl ethyl ketone are mixed and uniformly dispersed in a high-speed rotating mixer to prepare a resin varnish. bottom.

<Example 4>
High resilience epoxy resin ("YX7400" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 440 g / eq) 4 parts, liquid epoxy resin ("ZX1059" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., one of bisphenol A type epoxy resin and bisphenol F type epoxy resin : 1 mixture (mass ratio), epoxy equivalent: 169 g / eq) 4 parts, bixylenol type epoxy resin (manufactured by Mitsubishi Chemical Corporation "YX4000HK", epoxy equivalent: 185 g / eq) 2 parts are dissolved in 7 parts of cyclohexanone, 170 parts of alumina 2, 24 parts of elastomer 1 (solid content 50% by mass, number average molecular weight 5500), solid naphthol-based curing agent ("SN485" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., hydroxyl equivalent 215, solid content 50% MEK solution ) 6 parts, a curing accelerator (4-dimethylaminopyridine (DMAP), a MEK solution with a solid content of 5% by mass) 3 parts, and 9 parts of methyl ethyl ketone are mixed and uniformly dispersed in a high-speed rotating mixer to prepare a resin varnish. bottom.

<Example 5>
High resilience epoxy resin ("YX7400" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 440 g / eq) 4 parts, liquid epoxy resin ("ZX1059" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., one of bisphenol A type epoxy resin and bisphenol F type epoxy resin : 1 mixture (mass ratio), epoxy equivalent: 169 g / eq) 4 parts, bixylenol type epoxy resin (manufactured by Mitsubishi Chemical Corporation "YX4000HK", epoxy equivalent: 185 g / eq) 3 parts are dissolved in 13 parts of cyclohexanone, 215 parts of alumina 1, 12 parts of elastomer 1 (solid content 50% by mass, number average molecular weight 5500), solid naphthol-based curing agent ("SN485" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., hydroxyl equivalent 215, solid content 50% MEK solution ) 8 parts, a curing accelerator (4-dimethylaminopyridine (DMAP), MEK solution with a solid content of 5% by mass) 3 parts, and 15 parts of methyl ethyl ketone are mixed and uniformly dispersed in a high-speed rotating mixer to prepare a resin varnish. bottom.

<Example 6>
High resilience epoxy resin ("YX7400" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 440 g / eq) 4 parts, liquid epoxy resin ("ZX1059" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., one of bisphenol A type epoxy resin and bisphenol F type epoxy resin : 1 mixture (mass ratio), epoxy equivalent: 169 g / eq) 3 parts, bixylenol type epoxy resin (manufactured by Mitsubishi Chemical Corporation "YX4000HK", epoxy equivalent: 185 g / eq) 2 parts are dissolved in 10 parts of cyclohexanone, 215 parts of alumina 1, 20 parts of elastomer 2 (solid content 50% by mass, number average molecular weight 13700), solid naphthol-based curing agent ("SN485" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., hydroxyl equivalent 215, solid content 50% MEK solution ) 6 parts, a curing accelerator (4-dimethylaminopyridine (DMAP), MEK solution with a solid content of 5% by mass) 3 parts, and 15 parts of methyl ethyl ketone are mixed and uniformly dispersed in a high-speed rotating mixer to prepare a resin varnish. bottom.

<Example 7>
High resilience epoxy resin ("YX7400" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 440 g / eq) 4 parts, liquid epoxy resin ("ZX1059" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., one of bisphenol A type epoxy resin and bisphenol F type epoxy resin : 1 mixture (mass ratio), epoxy equivalent: 169 g / eq) 4 parts, bixylenol type epoxy resin (manufactured by Mitsubishi Chemical Corporation "YX4000HK", epoxy equivalent: 185 g / eq) 2 parts are dissolved in 10 parts of cyclohexanone, 210 parts of alumina 2, 24 parts of elastomer 2 (solid content 50% by mass, number average molecular weight 13700), solid naphthol-based curing agent ("SN485" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., hydroxyl equivalent 215, solid content 50% MEK solution ) 6 parts, a curing accelerator (4-dimethylaminopyridine (DMAP), MEK solution with a solid content of 5% by mass) 3 parts, and 13 parts of methyl ethyl ketone are mixed and uniformly dispersed in a high-speed rotating mixer to prepare a resin varnish. bottom.

<Comparative Example 1>
High resilience epoxy resin ("YX7400" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 440 g / eq) 4 parts, liquid epoxy resin ("ZX1059" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., one of bisphenol A type epoxy resin and bisphenol F type epoxy resin : 1 mixture (mass ratio), epoxy equivalent: 169 g / eq) 5 parts, bixylenol type epoxy resin (manufactured by Mitsubishi Chemical Corporation "YX4000HK", epoxy equivalent: 185 g / eq) 3 parts are dissolved in 14 parts of cyclohexanone, 215 parts of alumina 1, 5 parts of polyester resin (UE3400 manufactured by Unitika), solid naphthol-based curing agent (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd. "SN485", hydroxyl equivalent 215, solid content 50% MEK solution) 10 parts, curing 3 parts of an accelerator (4-dimethylaminopyridine (DMAP), MEK solution with a solid content of 5% by mass) and 18 parts of methyl ethyl ketone were mixed and dispersed uniformly with a high-speed rotating mixer to prepare a resin varnish.

<Comparative Example 2>
High resilience epoxy resin ("YX7400" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 440 g / eq) 4 parts, liquid epoxy resin ("ZX1059" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., one of bisphenol A type epoxy resin and bisphenol F type epoxy resin : 1 mixture (mass ratio), epoxy equivalent: 169 g / eq) 5 parts, bixylenol type epoxy resin (manufactured by Mitsubishi Chemical Corporation "YX4000HK", epoxy equivalent: 185 g / eq) 3 parts are dissolved in 5 parts of cyclohexanone, 100 parts of alumina 1, 5 parts of polyester resin (Unitika, UE3400), solid naphthol-based curing agent (Nippon Steel & Sumikin Chemical Co., Ltd. "SN485", hydroxyl equivalent 215, solid content 50% MEK solution) 10 parts, curing 3 parts of an accelerator (4-dimethylaminopyridine (DMAP), MEK solution with a solid content of 5% by mass) and 7 parts of methyl ethyl ketone were mixed and uniformly dispersed with a high-speed rotating mixer to prepare a resin varnish.

<Comparative Example 3>
High resilience epoxy resin ("YX7400" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 440 g / eq) 4 parts, liquid epoxy resin ("ZX1059" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., one of bisphenol A type epoxy resin and bisphenol F type epoxy resin : 1 mixture (mass ratio), epoxy equivalent: 169 g / eq) 3 parts, bixylenol type epoxy resin (manufactured by Mitsubishi Chemical Corporation "YX4000HK", epoxy equivalent: 185 g / eq) 2 parts are dissolved in 10 parts of cyclohexanone, 215 parts of alumina 3, 20 parts of elastomer 1 (solid content 50% by mass, number average molecular weight 5500), solid naphthol-based curing agent ("SN485" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., hydroxyl equivalent 215, solid content 50% MEK solution ) 6 parts, a curing accelerator (4-dimethylaminopyridine (DMAP), MEK solution with a solid content of 5% by mass) 3 parts, and 15 parts of methyl ethyl ketone are mixed and uniformly dispersed in a high-speed rotating mixer to prepare a resin varnish. bottom.

<Comparative Example 4>
High resilience epoxy resin ("YX7400" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 440 g / eq) 4 parts, liquid epoxy resin ("ZX1059" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., one of bisphenol A type epoxy resin and bisphenol F type epoxy resin : 1 mixture (mass ratio), epoxy equivalent: 169 g / eq) 4 parts, bixylenol type epoxy resin (manufactured by Mitsubishi Chemical Corporation "YX4000HK", epoxy equivalent: 185 g / eq) 2 parts are dissolved in 10 parts of cyclohexanone, 210 parts of alumina 4, 24 parts of elastomer 1 (solid content 50 mass%, number average molecular weight 5500), solid naphthol-based curing agent ("SN485" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., hydroxyl equivalent 215, solid content 50% MEK solution ) 6 parts, a curing accelerator (4-dimethylaminopyridine (DMAP), MEK solution with a solid content of 5% by mass) 3 parts, and 13 parts of methyl ethyl ketone are mixed and uniformly dispersed in a high-speed rotating mixer to prepare a resin varnish. bottom.

Abbreviations and the like in the table below are as follows.
Elastomer 1: Elastomer produced in Synthesis Example 1 Elastomer 2: Elastomer produced in Synthesis Example 2 YX7400: High impact resilience epoxy resin, epoxy equivalent 440 g/eq, ZX1059 manufactured by Mitsubishi Chemical Corporation: Bisphenol A type epoxy resin and bisphenol F type epoxy 1:1 mixed product with resin (mass ratio), epoxy equivalent: 169 g / eq, YX4000HK manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.: bixylenol type epoxy resin, epoxy equivalent: 185 g / eq, alumina 1 manufactured by Mitsubishi Chemical Corporation: average particle size and a mixture of alumina with different specific surface areas, an average particle size of 4.2 μm, a specific surface area of 0.8 m ² /g
Alumina 2: Alumina mixture with different average particle size and specific surface area, average particle size of 3.0 μm, specific surface area of 1.5 m ² /g
Alumina 3: Alumina with an average particle size of 4 μm ("CB-P05" manufactured by Showa Denko Co., Ltd., specific surface area 0.7 m ² /g)
Alumina 4: Alumina with an average particle size of 2 μm (“CB-P02” manufactured by Showa Denko Co., Ltd., specific surface area 1.1 m ² /g)
SN485: solid naphthol curing agent, hydroxyl equivalent 215, MEK solution with solid content of 50%, DMAP manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.: curing accelerator, 4-dimethylaminopyridine, MEK solution with solid content of 5% by mass UE3400: polyester resin , Content of component (A) manufactured by Unitika: The content (% by mass) when the non-volatile component of the resin composition excluding component (C) is taken as 100% by mass.
Content of component (C): The content (% by mass) when the non-volatile component of the resin composition is taken as 100% by mass.

As shown in Examples 1 to 7, the insulating layers formed from the resin compositions containing the components (A) to (C) are excellent in thermal conductivity and peel strength against metal layers. In addition, since Examples 1 to 7 are excellent in fillability, it can be seen that it is easy to form a sheet-like film. On the other hand, it can be seen that Comparative Examples 1-2, which do not contain component (A), are inferior to Examples 1-7 in peel strength. In Comparative Examples 3 and 4, which did not contain the component (C), the viscosity exceeded 2.5 Pa s, so it could not be formed into a sheet, and the peel strength and thermal conductivity could not be evaluated. I didn't. It has been confirmed that even if the components (D) and (E) are not contained, the results are similar to those of the above examples, although there is a difference in degree.

100 semiconductor chip package 110 semiconductor chip 120 sealing layer 130 rewiring layer (insulating layer)
140 conductor layer (rewiring layer)
150 solder resist layer 160 bump

Claims (18)

(A ) butadiene resin,
(B) an epoxy resin having an aromatic structure, and (C) a thermally conductive filler,
Component (C) has an average particle size of 2.5 μm to 5.0 μm and a specific surface area of 0.8 m ² /g or more,
Component (A) is selected from resins having a number average molecular weight (Mn) of 1,000 to 1,000,000, a glass transition temperature of 25°C or less, and resins that are liquid at 25°C. A resin composition that is at least one species. (A) a resin having in its molecule one or more structures selected from a polybutadiene structure, a polysiloxane structure, a polyisoprene structure, a polyisobutylene structure, and a polycarbonate structure;
(B) an epoxy resin having an aromatic structure, and
(C) a thermally conductive filler,
Component (C) has an average particle size of 2.5 μm to 5.0 μm and a specific surface area of 0.8 m ² / g or more,
Component (A) is selected from resins having a number average molecular weight (Mn) of 1,000 to 1,000,000 and a glass transition temperature of 25°C or less and resins that are liquid at 25°C. One or more resin compositions. 3. The resin composition according to claim 1, wherein the peel strength between the metal layer and a cured product obtained by thermally curing the resin composition at 180[deg.] C. for 90 minutes is 0.4 kgf/cm or more. 4. The resin composition according to any one of claims 1 to 3, wherein a cured product obtained by thermally curing the resin composition at 180°C for 90 minutes and the electrodeposited copper foil have a peel strength of 0.4 kgf/cm or more. The resin composition according to any one of claims 1 to 4 , wherein the content of component (C) is 87% by mass or more when the non-volatile components in the resin composition are taken as 100% by mass. The resin composition according to any one of claims 1 to 5 , wherein component (C) is alumina. 7. The resin composition according to any one of claims 1 to 6 , wherein the cured product obtained by thermally curing the resin composition at 180 ° C. for 90 minutes has a thermal conductivity of 1.5 W / m · K to 5.0 W / m · K. The described resin composition. The resin composition according to any one of claims 1 to 7 , wherein component (A) has a functional group capable of reacting with component (B). (A) component has one or more functional groups selected from hydroxyl groups, acid anhydride groups, phenolic hydroxyl groups, epoxy groups, isocyanate groups and urethane groups, according to any one of claims 1 to 8 The described resin composition. The resin composition according to any one of claims 1 to 9 , wherein component (A) has an imide structure. The resin composition according to any one of claims 1 to 10 , wherein component (A) has a phenolic hydroxyl group. The resin composition according to any one of claims 1 to 11 , wherein component (A) has a polybutadiene structure and a phenolic hydroxyl group. The resin composition according to any one of claims 1 to 12 , which is a resin composition for insulating layers of semiconductor chip packages. A resin sheet comprising a support and a resin composition layer containing the resin composition according to any one of claims 1 to 13 provided on the support. 15. The resin sheet according to claim 14 , which is a resin sheet for an insulating layer of a semiconductor chip package. A circuit board comprising an insulating layer formed from a cured product of the resin composition according to any one of claims 1 to 13 . 17. A semiconductor chip package comprising the circuit board according to claim 16 and a semiconductor chip mounted on the circuit board. A semiconductor chip package comprising a semiconductor chip sealed with the resin composition according to any one of claims 1 to 13 or the resin sheet according to claim 14 or 15 .

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