JP6958986B2 - 表示パネル構造 - Google Patents
表示パネル構造 Download PDFInfo
- Publication number
- JP6958986B2 JP6958986B2 JP2015079647A JP2015079647A JP6958986B2 JP 6958986 B2 JP6958986 B2 JP 6958986B2 JP 2015079647 A JP2015079647 A JP 2015079647A JP 2015079647 A JP2015079647 A JP 2015079647A JP 6958986 B2 JP6958986 B2 JP 6958986B2
- Authority
- JP
- Japan
- Prior art keywords
- dummy
- region
- gate
- pixel units
- display panel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000010409 thin film Substances 0.000 claims description 34
- 230000002093 peripheral effect Effects 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 13
- 239000003990 capacitor Substances 0.000 claims 3
- 230000005611 electricity Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G5/00—Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0292—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using a specific configuration of the conducting means connecting the protective devices, e.g. ESD buses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0404—Matrix technologies
- G09G2300/0413—Details of dummy pixels or dummy lines in flat panels
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0421—Structural details of the set of electrodes
- G09G2300/0426—Layout of electrodes and connections
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Theoretical Computer Science (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
<第1実施形態>
<第2実施形態>
<第3実施形態>
<第4実施形態>
<第5実施形態>
<第6実施形態>
<第7実施形態>
<第8実施形態>
<第9実施形態>
2 ゲートドライブ
3 データドライブ
4 第一トランジスタ
5 第二トランジスタ
6 ブリッジ
11 第一領域
12 第二領域
13 第三領域
18 画素
181 画素ユニット
19 ダミー画素
191 ダミー画素ユニット
17 基板
g1~gn ゲート線
gm ダミーゲート線
D1~Dn データ線
Dm ダミーデータ線
91 ダミー画素ユニット構造
Claims (7)
- 表示パネル構造であって、
表示領域及び周辺領域を含み、前記周辺領域により前記表示領域が包囲される基板と、
第一方向に沿って前記基板に平行に設置され、且つ前記表示領域から前記周辺領域まで延伸される複数のゲート線と、
第二方向に沿って前記基板に平行に設置されると共に前記第一方向は第二方向に平行にならず、且つ前記表示領域から前記周辺領域まで延伸される複数のデータ線と、
前記表示領域に位置される複数の画素ユニットと、
前記周辺領域に位置される複数のダミー画素ユニットと、を備え、
前記複数の画素ユニットの各々は、前記複数のゲート線のうちの隣接する2本のゲート線及び前記複数のデータ線のうちの隣接する2本のデータ線により画定され、
前記複数のダミー画素ユニットは、第一領域の複数のダミー画素ユニット、第二領域の複数のダミー画素ユニット、及び第三領域の複数のダミー画素ユニットを含み、
前記第一領域の複数のダミー画素ユニットは、前記第一方向に沿って延設され、前記第二領域の複数のダミー画素ユニットは、前記第二方向に沿って延設され、前記第三領域の複数のダミー画素ユニットは、前記第一領域と前記第二領域との間に設置され、
前記第三領域の複数のダミー画素ユニットは、前記複数のゲート線のうちの1本及び前記複数のデータ線のうちの1本を含み、
前記表示パネル構造は、
前記第一方向に沿って前記基板に延設されると共に前記第一領域の複数のダミー画素ユニットを通過させる少なくとも1本のダミーゲート線を更に含み、
前記少なくとも1本のダミーゲート線は、前記周辺領域に設置され、
前記少なくとも1本のダミーゲート線は、少なくとも1つのブリッジを有し、これにより、前記少なくとも1本のダミーゲート線は、前記複数のゲート線に横架する、ことを特徴とする表示パネル構造。 - 前記複数のゲート線を駆動させるためのゲートドライブと、
前記複数のデータ線を駆動させるためのデータドライブと、を更に備えることを特徴とする、請求項1記載の表示パネル構造。 - 前記第三領域の複数のダミー画素ユニットのうちの少なくとも1つは、薄膜トランジスタを備え、該薄膜トランジスタは、フローティングゲート、前記複数のデータ線のうちの1本に接続されるドレイン又はソース、及び複数のコンデンサ(capacitor)のうちの1つに接続されるソース又はドレインを含むことを特徴とする、請求項1記載の表示パネル構造。
- 前記第二方向に沿って前記基板に延設されると共に第二領域の複数のダミー画素ユニットを通過させる少なくとも1本のダミーデータ線を更に備え、
前記少なくとも1本のダミーデータ線は、前記周辺領域に設置され、
前記第二領域の複数のダミー画素ユニットの各々は、少なくとも1つの薄膜トランジスタを備え、該薄膜トランジスタは、前記複数のゲート線のうちの1本に接続されるゲート、前記少なくとも1本のダミーデータ線に接続されるドレイン又はソース、及び複数のコンデンサのうちの1つに接続されるソース又はドレインを含むことを特徴とする、請求項1記載の表示パネル構造。 - 前記少なくとも1本のダミーゲート線は、前記第二領域の複数のダミー画素ユニットを更に通過させることを特徴とする、請求項4記載の表示パネル構造。
- 前記第二領域の複数のダミー画素ユニットの各々は、少なくとも1つの薄膜トランジスタを備え、該薄膜トランジスタは、前記少なくとも1本のダミーゲート線に接続されるゲート、及び、前記少なくとも1本のダミーデータ線に接続されるドレイン又はソースを含むことを特徴とする、請求項5記載の表示パネル構造。
- 前記第三領域の複数のダミー画素ユニットのうちの少なくとも1つは、薄膜トランジスタを備え、該薄膜トランジスタは、フローティングドレイン又はフローティングソース、複数のコンデンサのうちの1つに接続されるソース又はドレイン、及び前記複数のゲート線のうちの1本に接続されるゲートを含むことを特徴とする、請求項1記載の表示パネル構造。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201461991254P | 2014-05-09 | 2014-05-09 | |
US61/991,254 | 2014-05-09 | ||
TW103123590 | 2014-07-09 | ||
TW103123590A TWI509334B (zh) | 2014-05-09 | 2014-07-09 | 顯示面板結構 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015215599A JP2015215599A (ja) | 2015-12-03 |
JP6958986B2 true JP6958986B2 (ja) | 2021-11-02 |
Family
ID=54368532
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015079647A Active JP6958986B2 (ja) | 2014-05-09 | 2015-04-09 | 表示パネル構造 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9620077B2 (ja) |
JP (1) | JP6958986B2 (ja) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105575321A (zh) * | 2014-10-15 | 2016-05-11 | 上海和辉光电有限公司 | 显示器的像素电路及其补偿方法 |
CN105590601B (zh) * | 2015-12-18 | 2018-06-26 | 上海中航光电子有限公司 | 驱动电路、阵列基板及显示装置 |
US10643577B2 (en) * | 2015-12-22 | 2020-05-05 | Sharp Kabushiki Kaisha | Display device |
US10490122B2 (en) | 2016-02-29 | 2019-11-26 | Samsung Display Co., Ltd. | Display device |
US10395599B2 (en) * | 2016-02-29 | 2019-08-27 | Samsung Display Co., Ltd. | Display device |
SG11201807505SA (en) | 2016-03-28 | 2018-09-27 | Apple Inc | Light-emitting diode displays |
US10354578B2 (en) | 2016-04-15 | 2019-07-16 | Samsung Display Co., Ltd. | Display device |
KR102666831B1 (ko) | 2016-04-15 | 2024-05-21 | 삼성디스플레이 주식회사 | 표시 장치 |
KR102605283B1 (ko) | 2016-06-30 | 2023-11-27 | 삼성디스플레이 주식회사 | 표시 장치 |
KR102613863B1 (ko) | 2016-09-22 | 2023-12-18 | 삼성디스플레이 주식회사 | 표시 장치 |
KR102611958B1 (ko) * | 2016-09-23 | 2023-12-12 | 삼성디스플레이 주식회사 | 표시 장치 |
KR20180061568A (ko) | 2016-11-29 | 2018-06-08 | 삼성디스플레이 주식회사 | 표시 장치 |
KR102559096B1 (ko) * | 2016-11-29 | 2023-07-26 | 삼성디스플레이 주식회사 | 표시 장치 |
JP6965412B2 (ja) * | 2016-11-30 | 2021-11-10 | 株式会社ジャパンディスプレイ | 表示装置 |
US10692452B2 (en) * | 2017-01-16 | 2020-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
KR20180096875A (ko) | 2017-02-21 | 2018-08-30 | 삼성디스플레이 주식회사 | 표시 장치 |
KR102386906B1 (ko) | 2017-05-11 | 2022-04-18 | 삼성디스플레이 주식회사 | 표시 장치 |
KR102417989B1 (ko) | 2017-05-23 | 2022-07-07 | 삼성디스플레이 주식회사 | 표시 장치 |
US10360862B2 (en) | 2017-09-07 | 2019-07-23 | Apple Inc. | Displays with supplemental loading structures |
CN110473487B (zh) * | 2018-05-11 | 2022-10-25 | 鸿富锦精密工业(深圳)有限公司 | 显示装置及显示装置的驱动方法 |
US11209705B2 (en) | 2018-06-06 | 2021-12-28 | Hannstar Display Corporation | Notched display panel |
KR20200066505A (ko) * | 2018-11-30 | 2020-06-10 | 삼성디스플레이 주식회사 | 표시 패널 |
KR20220019905A (ko) * | 2020-08-10 | 2022-02-18 | 삼성디스플레이 주식회사 | 표시 장치 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3256810B2 (ja) * | 1992-02-27 | 2002-02-18 | キヤノン株式会社 | 液晶表示装置 |
JP3302625B2 (ja) * | 1997-08-07 | 2002-07-15 | シャープ株式会社 | 液晶表示装置 |
JP5043072B2 (ja) * | 1997-10-14 | 2012-10-10 | 三星電子株式会社 | 液晶表示装置用基板、液晶表示装置及びその製造方法 |
JP4770103B2 (ja) * | 2002-08-06 | 2011-09-14 | ソニー株式会社 | 半導体装置 |
US20090102824A1 (en) * | 2006-03-15 | 2009-04-23 | Sharp Kabushiki Kaisha | Active matrix substrate and display device using the same |
WO2008062575A1 (fr) * | 2006-11-21 | 2008-05-29 | Sharp Kabushiki Kaisha | Substrat de matrice actif, panneau d'affichage et affichage |
US8638280B2 (en) * | 2007-04-27 | 2014-01-28 | Nlt Technologies, Ltd. | Non-rectangular display apparatus |
US9626900B2 (en) * | 2007-10-23 | 2017-04-18 | Japan Display Inc. | Electro-optical device |
TWI453517B (zh) | 2008-08-26 | 2014-09-21 | Chunghwa Picture Tubes Ltd | 液晶顯示裝置之畫素陣列基板 |
TW201039032A (en) | 2009-04-17 | 2010-11-01 | Chunghwa Picture Tubes Ltd | Active component array substrate |
JP5532481B2 (ja) * | 2009-05-13 | 2014-06-25 | Nltテクノロジー株式会社 | カラー画像表示方式、カラーフィルタ基板、カラー画素アレイ基板、画像表示装置及び電子機器 |
-
2015
- 2015-04-01 US US14/676,167 patent/US9620077B2/en active Active
- 2015-04-09 JP JP2015079647A patent/JP6958986B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2015215599A (ja) | 2015-12-03 |
US20150325593A1 (en) | 2015-11-12 |
US9620077B2 (en) | 2017-04-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6958986B2 (ja) | 表示パネル構造 | |
TWI509334B (zh) | 顯示面板結構 | |
CN103760702B (zh) | 显示面板 | |
JP6029247B2 (ja) | 液晶表示装置 | |
TWI657301B (zh) | 主動矩陣基板及顯示面板 | |
JP2016085365A (ja) | 表示装置 | |
CN108255353A (zh) | 内嵌式触控显示面板 | |
JP2009157365A5 (ja) | ||
JP2017067830A5 (ja) | ||
WO2016080541A1 (ja) | アクティブマトリクス基板及び表示パネル | |
CN104409037B (zh) | 显示面板及显示装置 | |
WO2017000450A1 (zh) | 显示驱动方法、显示面板及其制作方法、显示装置 | |
TWI518426B (zh) | 顯示面板 | |
CN204496141U (zh) | 液晶屏及显示装置 | |
CN105093656A (zh) | 一种液晶显示面板及其驱动方法、液晶显示装置 | |
CN103268032B (zh) | 一种阵列基板、显示面板和显示装置 | |
CN104635392A (zh) | 一种阵列基板、阵列基板的制造方法、显示面板 | |
WO2015110032A1 (zh) | 显示面板线路结构 | |
US20160190117A1 (en) | Slim bezel and display having the same | |
US20140362318A1 (en) | Multiple circuit board for liquid crystal display panels and method for manufacturing liquid crystal display panels | |
JP2019039985A (ja) | 表示装置 | |
US9389475B2 (en) | Matrix substrate and liquid crystal display device | |
US9563084B2 (en) | Liquid crystal display device and array substrate thereof | |
JP2016114780A (ja) | 表示装置 | |
JP6483411B2 (ja) | 表示装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180330 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190108 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20190408 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190517 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20191105 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200204 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200414 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200713 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200825 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20201120 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20201222 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210419 |
|
C60 | Trial request (containing other claim documents, opposition documents) |
Free format text: JAPANESE INTERMEDIATE CODE: C60 Effective date: 20210419 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20210426 |
|
C21 | Notice of transfer of a case for reconsideration by examiners before appeal proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C21 Effective date: 20210427 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210601 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210826 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210921 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20211007 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6958986 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |