JP6925711B2 - フレームユニット及び被加工物のレーザー加工方法 - Google Patents

フレームユニット及び被加工物のレーザー加工方法 Download PDF

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Publication number
JP6925711B2
JP6925711B2 JP2017079063A JP2017079063A JP6925711B2 JP 6925711 B2 JP6925711 B2 JP 6925711B2 JP 2017079063 A JP2017079063 A JP 2017079063A JP 2017079063 A JP2017079063 A JP 2017079063A JP 6925711 B2 JP6925711 B2 JP 6925711B2
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Japan
Prior art keywords
workpiece
frame unit
frame
electrode
unit
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Active
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JP2017079063A
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English (en)
Japanese (ja)
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JP2018182047A (ja
Inventor
栄 松崎
栄 松崎
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Disco Corp
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Disco Corp
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Publication date
Application filed by Disco Corp filed Critical Disco Corp
Priority to JP2017079063A priority Critical patent/JP6925711B2/ja
Priority to TW107108552A priority patent/TWI746821B/zh
Priority to CN201810297083.3A priority patent/CN108695224B/zh
Priority to KR1020180039821A priority patent/KR102357807B1/ko
Publication of JP2018182047A publication Critical patent/JP2018182047A/ja
Application granted granted Critical
Publication of JP6925711B2 publication Critical patent/JP6925711B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Laser Beam Processing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Dicing (AREA)
JP2017079063A 2017-04-12 2017-04-12 フレームユニット及び被加工物のレーザー加工方法 Active JP6925711B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017079063A JP6925711B2 (ja) 2017-04-12 2017-04-12 フレームユニット及び被加工物のレーザー加工方法
TW107108552A TWI746821B (zh) 2017-04-12 2018-03-14 框架單元及被加工物之雷射加工方法
CN201810297083.3A CN108695224B (zh) 2017-04-12 2018-04-04 框架单元和被加工物的激光加工方法
KR1020180039821A KR102357807B1 (ko) 2017-04-12 2018-04-05 프레임 유닛 및 피가공물의 레이저 가공 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017079063A JP6925711B2 (ja) 2017-04-12 2017-04-12 フレームユニット及び被加工物のレーザー加工方法

Publications (2)

Publication Number Publication Date
JP2018182047A JP2018182047A (ja) 2018-11-15
JP6925711B2 true JP6925711B2 (ja) 2021-08-25

Family

ID=63845421

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017079063A Active JP6925711B2 (ja) 2017-04-12 2017-04-12 フレームユニット及び被加工物のレーザー加工方法

Country Status (4)

Country Link
JP (1) JP6925711B2 (ko)
KR (1) KR102357807B1 (ko)
CN (1) CN108695224B (ko)
TW (1) TWI746821B (ko)

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2518628B2 (ja) * 1986-12-15 1996-07-24 太平化学製品株式会社 光透過性静電吸着板
US5515167A (en) * 1994-09-13 1996-05-07 Hughes Aircraft Company Transparent optical chuck incorporating optical monitoring
US5532903A (en) * 1995-05-03 1996-07-02 International Business Machines Corporation Membrane electrostatic chuck
JPH0927543A (ja) 1995-07-10 1997-01-28 Disco Abrasive Syst Ltd ウェーハカセット
JP2004207644A (ja) * 2002-12-26 2004-07-22 Toto Ltd 静電チャック及びこれを用いた貼合わせ基板製造装置
KR100832684B1 (ko) * 2003-07-08 2008-05-27 가부시끼가이샤 퓨처 비전 기판 스테이지 및 그에 이용하는 전극 및 그들을 구비한 처리 장치
JP2006205202A (ja) * 2005-01-27 2006-08-10 Disco Abrasive Syst Ltd レーザー加工装置
JP4666219B2 (ja) * 2005-12-02 2011-04-06 セイコーエプソン株式会社 コンテナ
JP2007305938A (ja) * 2006-05-15 2007-11-22 Tomoegawa Paper Co Ltd 静電吸着装置
JP5611718B2 (ja) * 2009-08-27 2014-10-22 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． 薄膜蒸着装置及びこれを利用した有機発光表示装置の製造方法
JP2012084720A (ja) * 2010-10-13 2012-04-26 Disco Abrasive Syst Ltd ワークの加工方法
US20120227886A1 (en) * 2011-03-10 2012-09-13 Taipei Semiconductor Manufacturing Company, Ltd. Substrate Assembly Carrier Using Electrostatic Force
WO2014039655A1 (en) * 2012-09-07 2014-03-13 Applied Materials, Inc. Portable electrostatic chuck carrier for thin substrates
KR102137510B1 (ko) * 2013-12-17 2020-07-27 삼성디스플레이 주식회사 정전척
KR102373326B1 (ko) * 2014-12-26 2022-03-11 삼성디스플레이 주식회사 증착 장치 및 증착 장치 내 기판 정렬 방법
KR102311586B1 (ko) * 2014-12-26 2021-10-12 삼성디스플레이 주식회사 증착 장치 및 증착 장치 내 기판 정렬 방법
WO2016125841A1 (ja) * 2015-02-07 2016-08-11 株式会社クリエイティブテクノロジー 被加工物保持装置及びレーザカット加工方法
JP6175470B2 (ja) * 2015-10-22 2017-08-02 株式会社東京精密 レーザダイシング装置及び方法
CN205900517U (zh) * 2016-06-20 2017-01-18 北京华卓精科科技股份有限公司 手持式静电吸盘装置

Also Published As

Publication number Publication date
KR102357807B1 (ko) 2022-01-28
TWI746821B (zh) 2021-11-21
TW201842550A (zh) 2018-12-01
CN108695224B (zh) 2024-02-06
JP2018182047A (ja) 2018-11-15
KR20180115223A (ko) 2018-10-22
CN108695224A (zh) 2018-10-23

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