JP6916192B2 - 研磨用組成物、ならびにこれを用いた研磨方法および半導体基板の製造方法 - Google Patents

研磨用組成物、ならびにこれを用いた研磨方法および半導体基板の製造方法 Download PDF

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Publication number
JP6916192B2
JP6916192B2 JP2018540930A JP2018540930A JP6916192B2 JP 6916192 B2 JP6916192 B2 JP 6916192B2 JP 2018540930 A JP2018540930 A JP 2018540930A JP 2018540930 A JP2018540930 A JP 2018540930A JP 6916192 B2 JP6916192 B2 JP 6916192B2
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JP
Japan
Prior art keywords
polishing
polishing composition
acid
polished
abrasive grains
Prior art date
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Application number
JP2018540930A
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English (en)
Japanese (ja)
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JPWO2018055985A1 (ja
Inventor
章太 鈴木
章太 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujimi Inc
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Fujimi Inc
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Publication date
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Publication of JPWO2018055985A1 publication Critical patent/JPWO2018055985A1/ja
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2018540930A 2016-09-23 2017-08-28 研磨用組成物、ならびにこれを用いた研磨方法および半導体基板の製造方法 Active JP6916192B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016185781 2016-09-23
JP2016185781 2016-09-23
PCT/JP2017/030786 WO2018055985A1 (ja) 2016-09-23 2017-08-28 研磨用組成物、ならびにこれを用いた研磨方法および半導体基板の製造方法

Publications (2)

Publication Number Publication Date
JPWO2018055985A1 JPWO2018055985A1 (ja) 2019-07-11
JP6916192B2 true JP6916192B2 (ja) 2021-08-11

Family

ID=61689913

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018540930A Active JP6916192B2 (ja) 2016-09-23 2017-08-28 研磨用組成物、ならびにこれを用いた研磨方法および半導体基板の製造方法

Country Status (3)

Country Link
JP (1) JP6916192B2 (zh)
TW (1) TW201816061A (zh)
WO (1) WO2018055985A1 (zh)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52112192A (en) * 1976-03-16 1977-09-20 Nakano Kiyoshi Grinding agent for metals
JPH09137155A (ja) * 1995-11-16 1997-05-27 Tokyo Ohka Kogyo Co Ltd 研磨用組成物および研磨方法
JP4188598B2 (ja) * 1999-08-13 2008-11-26 キャボット マイクロエレクトロニクス コーポレイション 停止化合物を伴う研磨系及びその使用方法
JP3606806B2 (ja) * 2000-05-12 2005-01-05 花王株式会社 研磨液組成物
JP4027929B2 (ja) * 2004-11-30 2007-12-26 花王株式会社 半導体基板用研磨液組成物
KR100725803B1 (ko) * 2006-12-05 2007-06-08 제일모직주식회사 실리콘 웨이퍼 최종 연마용 슬러리 조성물　및 이를 이용한실리콘 웨이퍼 최종 연마 방법
WO2009025383A1 (ja) * 2007-08-23 2009-02-26 Nitta Haas Incorporated 研磨組成物
EP2237311A4 (en) * 2008-02-01 2011-11-30 Fujimi Inc POLISHING COMPOSITION AND POLISHING METHOD THEREFOR
WO2012005289A1 (ja) * 2010-07-08 2012-01-12 株式会社Sumco シリコンウェーハの研磨方法およびその研磨液
JP6134644B2 (ja) * 2011-04-13 2017-05-24 株式会社フジミインコーポレーテッド 基板のエッジ研磨用組成物及びそれを用いた基板のエッジ研磨方法

Also Published As

Publication number Publication date
JPWO2018055985A1 (ja) 2019-07-11
WO2018055985A1 (ja) 2018-03-29
TW201816061A (zh) 2018-05-01

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