JP6912615B2 - ナノスケール・レベルにおける流体流解析のためのグラフェンベースの磁気ホール・センサ - Google Patents
ナノスケール・レベルにおける流体流解析のためのグラフェンベースの磁気ホール・センサ Download PDFInfo
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- JP6912615B2 JP6912615B2 JP2020030153A JP2020030153A JP6912615B2 JP 6912615 B2 JP6912615 B2 JP 6912615B2 JP 2020030153 A JP2020030153 A JP 2020030153A JP 2020030153 A JP2020030153 A JP 2020030153A JP 6912615 B2 JP6912615 B2 JP 6912615B2
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
- G01R33/072—Constructional adaptation of the sensor to specific applications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/704—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow using marked regions or existing inhomogeneities within the fluid stream, e.g. statistically occurring variations in a fluid parameter
- G01F1/708—Measuring the time taken to traverse a fixed distance
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/704—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow using marked regions or existing inhomogeneities within the fluid stream, e.g. statistically occurring variations in a fluid parameter
- G01F1/708—Measuring the time taken to traverse a fixed distance
- G01F1/7088—Measuring the time taken to traverse a fixed distance using electrically charged particles as tracers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/72—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating magnetic variables
- G01N27/74—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating magnetic variables of fluids
- G01N27/745—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating magnetic variables of fluids for detecting magnetic beads used in biochemical assays
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/12—Measuring magnetic properties of articles or specimens of solids or fluids
- G01R33/1269—Measuring magnetic properties of articles or specimens of solids or fluids of molecules labeled with magnetic beads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/80—Constructional details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/01—Manufacture or treatment
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Magnetic Means (AREA)
- Hall/Mr Elements (AREA)
Description
U=ΔY/Δt (式2)
で表される当該領域における周囲流体の平均流速が得られる。ここで式1のVcorrは相関された電圧であり、V1は第一ホール電圧信号であり、V2は第二ホール電圧信号であり、tは時間である。式2の、Uは速度であり、Yはチャネル沿いの距離であり、tは時間である。図18B中の450にグラフで示されるように、時間シフト(Δt)に亘って引き続くホール電圧信号(V1、V2)が計測される。しかして、流体の平均流速を、(ナノチャネルまたはマイクロチャネルであり得る)チャネル410沿いに所定の距離(ΔY)で変位された2つのセンサ100を用いていかに算定できるかが例示されている。この流速測定技法では、図示のような2つだけでなく、任意の数(M)のセンサ100を使用してよい。かかる等しく間隔取られたM個のセンサ100の配列によって、時間シフト(Δt)の計測がかかわる相互相関計算の信号対ノイズ比を改善することが可能である。
Claims (7)
- DC磁場を供給する第一コイルと、
AC磁場を供給する第二コイルと、
前記第一コイルおよび前記第二コイルに近接し、電圧バイアスされた、導電性で実質的に二次元の格子構造体と、
を含む装置であって、
前記第一コイルと、前記第二コイルと、前記導電性で実質的に二次元の格子構造体とは誘電体層で分離され、
前記第一コイルに接触しているビアの第一セット、および前記第二コイルに接触しているビアの第二セットをさらに含む、
装置。 - 前記導電性で実質的に二次元の格子構造体に接触して配置された、コンタクトの第一セットをさらに含む、請求項1に記載の装置。
- 前記導電性で実質的に二次元の格子構造体がグラフェンを含む、請求項1に記載の装置。
- 前記導電性で実質的に二次元の格子構造体が、MoS2、WSe2、黒リン、カーボン・ナノチューブ、Siナノワイヤ、または前述の材料の任意の組み合せを含む、請求項1に記載の装置。
- 前記誘電体層の少なくとも1つが、ガラス、水晶、SiC、窒化珪素、プラスチック、または前述の材料の任意の組み合わせの基板の上に配置される、請求項1に記載の装置。
- 前記誘電体層の少なくとも1つが、SiO2、Al2O3、HfO、または前述の材料の任意の組み合わせを含む、請求項1に記載の装置。
- 前記第二コイルが、細長のリニアな素子である、請求項1に記載の装置。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562241594P | 2015-10-14 | 2015-10-14 | |
US62/241,594 | 2015-10-14 | ||
US14/944,766 US9702748B2 (en) | 2015-10-14 | 2015-11-18 | Graphene-based magnetic hall sensor for fluid flow analysis at nanoscale level |
US14/944,766 | 2015-11-18 | ||
JP2018510398A JP6678234B2 (ja) | 2015-10-14 | 2016-09-07 | ナノスケール・レベルにおける流体流解析のためのグラフェンベースの磁気ホール・センサ |
Related Parent Applications (1)
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JP2018510398A Division JP6678234B2 (ja) | 2015-10-14 | 2016-09-07 | ナノスケール・レベルにおける流体流解析のためのグラフェンベースの磁気ホール・センサ |
Publications (2)
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JP2020109410A JP2020109410A (ja) | 2020-07-16 |
JP6912615B2 true JP6912615B2 (ja) | 2021-08-04 |
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JP2020030152A Active JP6912614B2 (ja) | 2015-10-14 | 2020-02-26 | ナノスケール・レベルにおける流体流解析のためのグラフェンベースの磁気ホール・センサ |
JP2020030153A Active JP6912615B2 (ja) | 2015-10-14 | 2020-02-26 | ナノスケール・レベルにおける流体流解析のためのグラフェンベースの磁気ホール・センサ |
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JP2020030152A Active JP6912614B2 (ja) | 2015-10-14 | 2020-02-26 | ナノスケール・レベルにおける流体流解析のためのグラフェンベースの磁気ホール・センサ |
Country Status (6)
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US (3) | US9702748B2 (ja) |
JP (3) | JP6678234B2 (ja) |
CN (1) | CN108139361B (ja) |
DE (1) | DE112016003356B4 (ja) |
GB (1) | GB2558154B (ja) |
WO (1) | WO2017064578A2 (ja) |
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WO2016190531A1 (ko) * | 2015-05-28 | 2016-12-01 | 한국표준과학연구원 | 흑린 박막의 제조방법 및 이로부터 제조된 흑린 박막 |
FR3045826A1 (fr) * | 2015-12-17 | 2017-06-23 | Commissariat Energie Atomique | Supports amplificateurs de contraste utilisant un materiau bidimensionnel |
DE102018116918A1 (de) | 2018-07-12 | 2020-01-16 | Helmholtz-Zentrum Dresden - Rossendorf E.V. | Fluidik-Detektionssystem |
US10573803B1 (en) * | 2018-08-21 | 2020-02-25 | Semiconductor Components Industries, Llc | Current sensor packages with through hole in semiconductor |
JP7204453B2 (ja) * | 2018-11-30 | 2023-01-16 | 株式会社東芝 | 電流検出装置 |
US11415643B2 (en) * | 2018-12-06 | 2022-08-16 | Texas Instruments Incorporated | Amplification using ambipolar hall effect in graphene |
CN110061124B (zh) * | 2019-04-25 | 2020-10-27 | 中国科学技术大学 | 鲁棒石墨烯量子霍尔器件及其制备方法 |
CN110672525B (zh) * | 2019-10-23 | 2022-03-11 | 成都信息工程大学 | 一种溶液浓度测量装置、方法及溶液传感灵敏度测量方法 |
CN111289413A (zh) * | 2020-03-02 | 2020-06-16 | 电子科技大学 | 一种应用于空气中重金属颗粒检测的传感器 |
US11449083B2 (en) | 2020-08-04 | 2022-09-20 | International Business Machines Corporation | Evaluating enhanced oil recovery methods |
CN112540329A (zh) * | 2020-10-20 | 2021-03-23 | 中国科学院微电子研究所 | 一种霍尔传感器及其制备和测试方法 |
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WO2004017102A2 (en) * | 2002-08-16 | 2004-02-26 | Brown University Research Foundation | Scanning magnetic microscope having improved magnetic sensor |
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WO2005111597A1 (ja) | 2004-05-17 | 2005-11-24 | The Circle For The Promotion Of Science And Engineering | 磁性微粒子の検出装置 |
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- 2016-09-07 CN CN201680059652.XA patent/CN108139361B/zh active Active
- 2016-09-07 DE DE112016003356.7T patent/DE112016003356B4/de active Active
- 2016-09-07 WO PCT/IB2016/055329 patent/WO2017064578A2/en active Application Filing
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Also Published As
Publication number | Publication date |
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JP6912614B2 (ja) | 2021-08-04 |
GB201807595D0 (en) | 2018-06-27 |
US20170139018A1 (en) | 2017-05-18 |
US20170191857A1 (en) | 2017-07-06 |
CN108139361A (zh) | 2018-06-08 |
JP6678234B2 (ja) | 2020-04-08 |
GB2558154A (en) | 2018-07-04 |
WO2017064578A2 (en) | 2017-04-20 |
US20170108362A1 (en) | 2017-04-20 |
JP2020109409A (ja) | 2020-07-16 |
WO2017064578A3 (en) | 2018-02-01 |
CN108139361B (zh) | 2022-03-01 |
DE112016003356T5 (de) | 2018-04-05 |
US9891294B2 (en) | 2018-02-13 |
DE112016003356B4 (de) | 2021-07-08 |
GB2558154B (en) | 2018-12-12 |
JP2018536839A (ja) | 2018-12-13 |
JP2020109410A (ja) | 2020-07-16 |
US9702748B2 (en) | 2017-07-11 |
US9891084B2 (en) | 2018-02-13 |
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