JP6910148B2 - Wafer cleaning device - Google Patents

Wafer cleaning device Download PDF

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JP6910148B2
JP6910148B2 JP2017004107A JP2017004107A JP6910148B2 JP 6910148 B2 JP6910148 B2 JP 6910148B2 JP 2017004107 A JP2017004107 A JP 2017004107A JP 2017004107 A JP2017004107 A JP 2017004107A JP 6910148 B2 JP6910148 B2 JP 6910148B2
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wafer
cleaning
outer peripheral
peripheral edge
cleaning member
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JP2018113393A (en
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恒成 清原
恒成 清原
石川 智久
智久 石川
桑名 一孝
一孝 桑名
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Disco Corp
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Disco Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/6715Apparatus for applying a liquid, a resin, an ink or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Description

本発明は、ウエーハ洗浄装置に関する。 The present invention relates to a wafer cleaning device.

シリコン等のインゴットから切り出されてスライスされたウエーハの表面には、うねりが形成されている。うねりを除去するため、ウエーハの表面には、保護部材として液状樹脂を介してテープが貼着される(例えば、特許文献1参照)。特許文献1では、ウエーハの表面形状が液状樹脂に転写され、液状樹脂を硬化させた後にウエーハの反対面を研削加工することでうねりが除去される。研削後は、硬化した樹脂及びテープ(保護部材)がウエーハから剥離される。 Waviness is formed on the surface of the wafer cut out from an ingot such as silicon and sliced. In order to remove the waviness, a tape is attached to the surface of the wafer via a liquid resin as a protective member (see, for example, Patent Document 1). In Patent Document 1, the surface shape of the wafer is transferred to the liquid resin, and the waviness is removed by grinding the opposite surface of the wafer after curing the liquid resin. After grinding, the cured resin and tape (protective member) are peeled off from the wafer.

特開2016−167546号公報Japanese Unexamined Patent Publication No. 2016-167546

ところで、ウエーハから保護部材を剥離すると、ウエーハの外周縁に保護部材の剥がし残り(特に硬化後の樹脂)が発生してしまうことがある。剥がし残りの樹脂は、後の工程に影響を与えるだけでなく、研削したウエーハの厚み不良が発生する要因と成り得る。 By the way, when the protective member is peeled off from the wafer, the protective member may be left unpeeled (particularly the resin after curing) on the outer peripheral edge of the wafer. The resin remaining after peeling not only affects the subsequent process, but can also be a factor in causing a poor thickness of the ground wafer.

本発明はかかる点に鑑みてなされたものであり、ウエーハの外周縁を洗浄してウエーハの厚み不良の発生を防止することができるウエーハ洗浄装置を提供することを目的の1つとする。 The present invention has been made in view of this point, and one of the objects of the present invention is to provide a wafer cleaning device capable of cleaning the outer peripheral edge of the wafer to prevent the occurrence of poor thickness of the wafer.

本発明の一態様のウエーハ洗浄装置は、ウエーハの外周縁を洗浄するウエーハ洗浄装置であって、ウエーハの外周部分をはみ出させ中央を保持する保持面を有するテーブルと、テーブルの中心を軸に回転させるテーブル回転手段と、テーブルからはみ出したウエーハの外周縁を洗浄する洗浄手段と、テーブルと洗浄手段とを相対的に接近及び離間する方向に移動させる移動手段と、を備え、洗浄手段は、ウエーハの外周縁の一部を収容する洗浄室と、洗浄室内にウエーハの外周縁の一部を挿入する挿入口と、挿入口から挿入したウエーハの外周縁に接触する洗浄部材と、洗浄部材を回転させる回転手段と、洗浄部材とウエーハとに洗浄水を供給する洗浄水ノズルと、挿入口から挿入したウエーハの上面及び下面に向かってエアを噴射させウエーハを洗浄室の内側と外側とで仕切るエアカーテンと、ウエーハを洗浄した後の洗浄水を排水する排水口と、エアカーテンに使用したエアを排気する排気口と、を備え、移動手段によりテーブルと洗浄手段とを接近させテーブルが保持したウエーハの外周縁に洗浄部材を接触させ、洗浄部材を回転させ、テーブルを回転させ、ウエーハの外周縁を洗浄する。 The waiha cleaning device according to one aspect of the present invention is a waha cleaning device that cleans the outer peripheral edge of the waiha, and is a table having a holding surface that protrudes the outer peripheral portion of the waha and holds the center, and rotates around the center of the table. The cleaning means includes a table rotating means for causing the table to be rotated, a cleaning means for cleaning the outer peripheral edge of the wafer protruding from the table, and a moving means for moving the table and the cleaning means in a direction of relatively approaching and separating from each other. A cleaning chamber that accommodates a part of the outer peripheral edge of the wain, an insertion port that inserts a part of the outer peripheral edge of the waiha into the cleaning chamber, a cleaning member that contacts the outer peripheral edge of the waiha inserted from the insertion port, and a cleaning member that rotates. The rotating means for causing the cleaning member and the cleaning water nozzle for supplying cleaning water to the cleaning member, and the air for injecting air from the insertion port toward the upper surface and the lower surface of the cleaning chamber to partition the cleaning chamber between the inside and the outside. The waiha is provided with a curtain, a drain port for draining the washing water after washing the waiha, and an exhaust port for exhausting the air used for the air curtain. The cleaning member is brought into contact with the outer peripheral edge of the cleaning member, the cleaning member is rotated, the table is rotated, and the outer peripheral edge of the wafer is cleaned.

この構成によれば、洗浄室内において、ウエーハの外周縁に洗浄部材を接触させた状態でテーブル及び洗浄部材を回転させることにより、ウエーハの外周縁を洗浄することができる。このとき、洗浄手段とウエーハに洗浄水が供給されているため、ウエーハの洗浄効果が高められている。また、洗浄中は洗浄室がエアカーテンによって仕切られているため、洗浄室内でウエーハに洗浄水が供給されても、洗浄水が挿入口から直に洗浄室の外側に飛散することなく排水口から排出することが可能である。以上のように、ウエーハの外周縁にゴミが付着した場合であっても、ウエーハの外周縁を洗浄してウエーハの厚み不良の発生を防止することができる。 According to this configuration, the outer peripheral edge of the wafer can be cleaned by rotating the table and the cleaning member in a state where the cleaning member is in contact with the outer peripheral edge of the wafer in the cleaning chamber. At this time, since the cleaning water is supplied to the cleaning means and the wafer, the cleaning effect of the wafer is enhanced. In addition, since the cleaning chamber is partitioned by an air curtain during cleaning, even if the cleaning water is supplied to the wafer in the cleaning chamber, the cleaning water does not scatter directly from the insertion port to the outside of the cleaning chamber from the drain port. It is possible to discharge. As described above, even when dust adheres to the outer peripheral edge of the wafer, the outer peripheral edge of the wafer can be cleaned to prevent the occurrence of poor thickness of the wafer.

また、本発明の一態様の上記ウエーハ洗浄装置において、テーブルはウエーハの外周縁が洗浄室に挿入された部分を低く傾けてウエーハを洗浄する。 Further, in the wafer cleaning device according to one aspect of the present invention, the table cleans the wafer by tilting the portion where the outer peripheral edge of the wafer is inserted into the cleaning chamber low.

また、本発明の一態様の上記ウエーハ洗浄装置において、ウエーハの外周縁には面取り部を備えていて、洗浄部材は、ウエーハの上面に連接する面取り部の上側を洗浄する上側洗浄部材と、ウエーハの下面に連接する面取り部の下側を洗浄する下側洗浄部材と、を備える。 Further, in the wafer cleaning device according to one aspect of the present invention, the outer peripheral edge of the wafer is provided with a chamfered portion, and the cleaning member includes an upper cleaning member for cleaning the upper side of the chamfered portion connected to the upper surface of the wafer and the wafer. A lower cleaning member for cleaning the lower side of the chamfered portion connected to the lower surface of the surface is provided.

また、本発明の一態様の上記ウエーハ洗浄装置は、ウエーハの外周縁に接触する洗浄部材の接触面が挿入口から検出可能であって、挿入口の両端を横断させる検出光を投光する投光部と検出光を受光する受光部とを備えた透過型センサと、移動手段でテーブルに接近する方向に洗浄手段を移動させ、検出光が遮光されたときの洗浄手段の移動量が予め設定した設定値より大きくなったら洗浄部材が消耗したと判断する判断部と、を備える。 Further, in the above-mentioned waiha cleaning device according to one aspect of the present invention, the contact surface of the cleaning member in contact with the outer peripheral edge of the waha can be detected from the insertion port, and the detection light that crosses both ends of the insertion port is projected. A transmissive sensor equipped with a light unit and a light receiving unit that receives the detection light, and the cleaning means are moved in a direction approaching the table by the moving means, and the amount of movement of the cleaning means when the detection light is blocked is preset. It is provided with a determination unit for determining that the cleaning member is worn out when the value becomes larger than the set value.

また、本発明の一態様の上記ウエーハ洗浄装置は、ウエーハの外周縁に接触する洗浄部材の接触面が挿入口から検出可能であって、挿入口の両端を横断させる検出光を投光する投光部と検出光を受光する受光部とを備えた透過型センサと、検出光は、洗浄部材によって遮光されていて、受光部が受光する受光量が予め設定した設定値より大きくなったら洗浄部材が消耗したと判断する判断部と、を備える。 Further, in the above-mentioned waiha cleaning device according to one aspect of the present invention, the contact surface of the cleaning member in contact with the outer peripheral edge of the waha can be detected from the insertion port, and the detection light that crosses both ends of the insertion port is projected. A transmissive sensor having a light unit and a light receiving unit that receives the detection light, and the detection light is shielded by the cleaning member, and when the amount of light received by the light receiving unit becomes larger than a preset set value, the cleaning member It is provided with a judgment unit for determining that the light is exhausted.

本発明によれば、ウエーハの外周縁を洗浄してウエーハの厚み不良の発生を防止することができる。 According to the present invention, it is possible to clean the outer peripheral edge of the wafer to prevent the occurrence of poor thickness of the wafer.

本実施の形態の係るウエーハ洗浄装置が適用される研削装置の側面模式図である。It is a side schematic of the grinding apparatus to which the wafer cleaning apparatus which concerns on this embodiment is applied. 図1に示すウエーハ洗浄装置を矢印A方向から見た上面模式図である。FIG. 5 is a schematic top view of the wafer cleaning device shown in FIG. 1 as viewed from the direction of arrow A. 図1に示すウエーハ洗浄装置を矢印B方向から見た側面模式図である。FIG. 5 is a schematic side view of the wafer cleaning device shown in FIG. 1 as viewed from the direction of arrow B. 本実施の形態に係るウエーハ洗浄装置の動作説明図である。It is operation explanatory drawing of the wafer cleaning apparatus which concerns on this embodiment. 本実施の形態に係るウエーハ洗浄装置において、洗浄部材の消耗を検出する構成を示す模式図である。It is a schematic diagram which shows the structure which detects the wear | wear of the cleaning member in the wafer cleaning apparatus which concerns on this embodiment. 変形例に係るウエーハ洗浄装置を示す模式図である。It is a schematic diagram which shows the wafer cleaning apparatus which concerns on a modification.

以下、添付図面を参照して、本実施の形態に係るウエーハ洗浄装置が適用される研削装置について説明する。先ず、図1から図3を参照して装置構成について説明する。図1は、本実施の形態の係るウエーハ洗浄装置が適用される研削装置の側面模式図である。図2は、図1に示すウエーハ洗浄装置を矢印A方向から見た上面模式図である。図3は、図1に示すウエーハ洗浄装置を矢印B方向から見た側面模式図である。なお、図2及び図3では、説明の便宜上、ウエーハ洗浄装置を構成する部品の一部を省略している。また、本実施の形態では、ウエーハ洗浄装置を研削装置に適用する例について説明するが、これに限定されない。ウエーハ洗浄装置は、切削装置等の他の加工装置に適用されてもよく、ウエーハ洗浄装置が単独で構成されてもよい。 Hereinafter, the grinding apparatus to which the wafer cleaning apparatus according to the present embodiment is applied will be described with reference to the attached drawings. First, the apparatus configuration will be described with reference to FIGS. 1 to 3. FIG. 1 is a schematic side view of a grinding device to which the wafer cleaning device according to the present embodiment is applied. FIG. 2 is a schematic top view of the wafer cleaning device shown in FIG. 1 as viewed from the direction of arrow A. FIG. 3 is a schematic side view of the wafer cleaning device shown in FIG. 1 as viewed from the direction of arrow B. Note that, in FIGS. 2 and 3, for convenience of explanation, some of the parts constituting the wafer cleaning device are omitted. Further, in the present embodiment, an example in which the wafer cleaning device is applied to the grinding device will be described, but the present invention is not limited to this. The wafer cleaning device may be applied to other processing devices such as a cutting device, or the wafer cleaning device may be configured independently.

図1に示すように、本実施の形態に係る研削装置は、ウエーハWの表面を研削した後、当該ウエーハWを搬送手段1でウエーハ洗浄装置2に搬送し、ウエーハ洗浄装置2でウエーハWの外周縁を洗浄するように構成されている。加工対象となるウエーハWは、例えばデバイスパターンが形成される前のアズスライスウエーハであり、円柱状のインゴットをワイヤーソーでスライスして形成される。また、ウエーハWの外周縁には、R状の面取り部Cが形成されている。詳細は後述するが、ウエーハWの上面に連接する面取り部Cの上側を上側面取り部C1とし、ウエーハWの下面に連接する面取り部Cの下側を下側面取り部C2とする。 As shown in FIG. 1, in the grinding apparatus according to the present embodiment, after grinding the surface of the wafer W, the wafer W is conveyed to the wafer cleaning apparatus 2 by the conveying means 1, and the wafer cleaning apparatus 2 conveys the wafer W. It is configured to clean the outer periphery. The wafer W to be processed is, for example, an as-slice wafer before the device pattern is formed, and is formed by slicing a columnar ingot with a wire saw. Further, an R-shaped chamfered portion C is formed on the outer peripheral edge of the wafer W. Although the details will be described later, the upper side of the chamfered portion C connected to the upper surface of the wafer W is referred to as the upper side chamfered portion C1, and the lower side of the chamfered portion C connected to the lower surface of the wafer W is referred to as the lower side chamfered portion C2.

ウエーハWは、シリコン、ガリウムヒソ、シリコンカーバイド等のワークに限定されるものではない。例えば、セラミック、ガラス、サファイア系の無機材料基板、板状金属や樹脂の延性材料、ミクロンオーダーからサブミクロンオーダの平坦度(TTV:Total Thickness Variation)が要求される各種加工材料をウエーハWとしてもよい。ここでいう平坦度とは、例えばウエーハWの被研削面を基準面として厚み方向を測定した高さのうち、最大値と最小値との差を示す。 The wafer W is not limited to workpieces such as silicon, gallium hiso, and silicon carbide. For example, ceramic, glass, sapphire-based inorganic material substrates, ductile materials of plate-like metals and resins, and various processed materials that require micron-order to submicron-order flatness (TTV: Total Thickness Variation) can be used as wafer W. good. The flatness referred to here means, for example, the difference between the maximum value and the minimum value of the heights measured in the thickness direction with the surface to be ground of the wafer W as a reference surface.

また、インゴットからスライスされたウエーハWの表面には、うねりが形成される。本実施の形態では、ウエーハWの表面に形成されたうねりが研削加工によって予め除去されており、その後の工程を実施する構成について主に説明する。 In addition, undulations are formed on the surface of the wafer W sliced from the ingot. In the present embodiment, the waviness formed on the surface of the wafer W has been removed in advance by grinding, and a configuration in which the subsequent steps are carried out will be mainly described.

搬送手段1は、研削後のウエーハWの上面を保持してウエーハ洗浄装置2に搬送(搬入)するように構成されている。具体的に搬送手段1は、ウエーハWを吸引保持して任意の位置に移動可能なポーラスチャックであり、円板状の枠体の下面にセラミックス等の多孔質材で構成される保持面10が形成されている。保持面10に生じる負圧によって、ウエーハWを吸引保持することが可能となっている。 The transport means 1 is configured to hold the upper surface of the wafer W after grinding and transport (carry in) it to the wafer cleaning device 2. Specifically, the transport means 1 is a porous chuck that can suck and hold the wafer W and move it to an arbitrary position, and a holding surface 10 made of a porous material such as ceramics is formed on the lower surface of a disk-shaped frame. It is formed. The negative pressure generated on the holding surface 10 makes it possible to suck and hold the wafer W.

ウエーハ洗浄装置2は、研削後のウエーハWの外周縁を洗浄するように構成されている。具体的にウエーハ洗浄装置2は、ウエーハWを吸引保持するテーブル3を洗浄手段4に移動させて、洗浄手段4でウエーハWを洗浄する。 The wafer cleaning device 2 is configured to clean the outer peripheral edge of the wafer W after grinding. Specifically, the wafer cleaning device 2 moves the table 3 that sucks and holds the wafer W to the cleaning means 4, and cleans the wafer W by the cleaning means 4.

テーブル3は、ウエーハWの下面中央を吸引保持するポーラスチャックで構成されている。テーブル3は、ウエーハWの外径より小さい円板状の枠体の上面に、セラミックス等の多孔質材で構成される保持面30を有している。保持面30に生じる負圧によって、ウエーハWを吸引保持することが可能となっている。搬送手段1によってウエーハWがテーブル3に搬送されると、テーブル3は、ウエーハWの外周部分をテーブル3の外周からはみ出させるようにして、ウエーハWの下面中央を吸引保持する。 The table 3 is composed of a porous chuck that sucks and holds the center of the lower surface of the wafer W. The table 3 has a holding surface 30 made of a porous material such as ceramics on the upper surface of a disk-shaped frame smaller than the outer diameter of the wafer W. The negative pressure generated on the holding surface 30 makes it possible to suck and hold the wafer W. When the wafer W is transported to the table 3 by the transport means 1, the table 3 sucks and holds the center of the lower surface of the wafer W so that the outer peripheral portion of the wafer W protrudes from the outer circumference of the table 3.

テーブル3の下方を支持する基台5には、モータ等で構成されるテーブル回転手段6が設けられている。テーブル回転手段6は、テーブル3の中心を軸にして当該テーブル3を回転駆動する。また、基台5の下端は、後述する移動手段8の移動部80に対して回動可能に支持されている。 A table rotating means 6 composed of a motor or the like is provided on a base 5 that supports the lower part of the table 3. The table rotating means 6 rotates and drives the table 3 around the center of the table 3. Further, the lower end of the base 5 is rotatably supported by the moving portion 80 of the moving means 8 described later.

基台5の回動軸5aは、紙面手前から奥に向かって水平に延びている。基台5及びテーブル3は、図示しない駆動機構によって回動軸5aを中心に回動可能に構成される。これにより、テーブル3の保持面30を任意の角度に傾斜させる(調整する)ことが可能である。すなわち、回動軸5a及び不図示の駆動機構は、テーブル3の保持面30を傾斜させる傾け手段7を構成する。なお、図1に示す状態では、保持面30が水平となるようにテーブル3の角度が調整されている。 The rotation shaft 5a of the base 5 extends horizontally from the front side to the back side of the paper surface. The base 5 and the table 3 are configured to be rotatable around a rotation shaft 5a by a drive mechanism (not shown). Thereby, the holding surface 30 of the table 3 can be tilted (adjusted) at an arbitrary angle. That is, the rotation shaft 5a and the drive mechanism (not shown) constitute the tilting means 7 for tilting the holding surface 30 of the table 3. In the state shown in FIG. 1, the angle of the table 3 is adjusted so that the holding surface 30 is horizontal.

また、テーブル3の下方には、テーブル3を洗浄手段4に対して相対的に接近及び離間する方向に移動させる移動手段8が設けられている。具体的に移動手段8は、テーブル3及び基台5を支持する移動部80を、ガイドレール81に沿って移動させるモータ駆動のガイドアクチュエータで構成される。ガイドレール81は、一端側(図1の紙面左側)から他端側(図1の紙面右側)に向かって下方に傾斜するように延在している。なお、移動手段8は、は、モータ駆動のガイドアクチュエータに限定されず、例えばエア駆動のガイドシリンダで構成されてもよい。 Further, below the table 3, a moving means 8 for moving the table 3 in a direction relatively close to and separated from the cleaning means 4 is provided. Specifically, the moving means 8 is composed of a motor-driven guide actuator that moves the moving portion 80 that supports the table 3 and the base 5 along the guide rail 81. The guide rail 81 extends so as to incline downward from one end side (left side of the paper surface in FIG. 1) to the other end side (right side of the paper surface in FIG. 1). The moving means 8 is not limited to the motor-driven guide actuator, and may be composed of, for example, an air-driven guide cylinder.

ガイドレール81の他端側には、洗浄手段4が設けられている。洗浄手段4は、テーブル3からはみ出したウエーハWの外周縁を洗浄するように構成される。具体的に洗浄手段4は、ウエーハWの洗浄室Sを形成する筐体部40と、洗浄室S内に設けられる洗浄部材41とを含んで構成される。筐体部40は、中空円柱形状を有しており、その軸方向がガイドレール81の傾斜角に対応して傾けられている。具体的に筐体部40の軸方向は、ガイドレール81の延在方向に対して垂直となるように傾けられている。なお、筐体部40は、中空円柱形状に限定されず、適宜変更が可能である。筐体部40は、洗浄室Sを備えていればよいので、例えば中空四角柱形状であってもよい。 A cleaning means 4 is provided on the other end side of the guide rail 81. The cleaning means 4 is configured to clean the outer peripheral edge of the wafer W protruding from the table 3. Specifically, the cleaning means 4 includes a housing portion 40 forming the cleaning chamber S of the wafer W and a cleaning member 41 provided in the cleaning chamber S. The housing portion 40 has a hollow cylindrical shape, and its axial direction is tilted corresponding to the tilt angle of the guide rail 81. Specifically, the axial direction of the housing portion 40 is tilted so as to be perpendicular to the extending direction of the guide rail 81. The housing portion 40 is not limited to the hollow cylindrical shape, and can be appropriately changed. Since the housing portion 40 may be provided with the cleaning chamber S, it may have a hollow quadrangular prism shape, for example.

筐体部40の側面には、ウエーハWの一部を挿入可能な円弧状のスリット40a(挿入口)が形成されている。スリット40aの幅は、ウエーハWの厚みより僅かに大きく設定されている。スリット40aにウエーハWの一部が挿入されることで、ウエーハWの外周縁の一部が洗浄室Sに収容される。すなわち、洗浄手段4は、スリット40aから挿入されるウエーハWの外周縁を洗浄室S内で洗浄するものである。なお、説明の便宜上、洗浄室S内に収容されるウエーハWを二点鎖線で示している。 An arcuate slit 40a (insertion port) into which a part of the wafer W can be inserted is formed on the side surface of the housing portion 40. The width of the slit 40a is set to be slightly larger than the thickness of the wafer W. By inserting a part of the wafer W into the slit 40a, a part of the outer peripheral edge of the wafer W is housed in the cleaning chamber S. That is, the cleaning means 4 cleans the outer peripheral edge of the wafer W inserted through the slit 40a in the cleaning chamber S. For convenience of explanation, the wafer W housed in the washing chamber S is indicated by a chain double-dashed line.

また、筐体部40には、洗浄室S内のエアを外に排出(排気)する排気口40bと、洗浄室S内の水を排出(排水)する排水口40cとが設けられている。排気口40bは、筐体部40の上面に形成され、洗浄室Sと外部空間とを連通する。排水口40cは、傾けられた筐体部40の下面の最下端に形成され、洗浄室Sと外部空間とを連通する。なお、排気口40bは必ずしも設けられなくてよい。排気口40bを備えない代わりに、例えば、比較的大きな口径の排水口40cを形成し、当該排水口40cで排水と排気の両方を実施してもよい。 Further, the housing portion 40 is provided with an exhaust port 40b for discharging (exhausting) the air in the cleaning chamber S to the outside and a drain port 40c for discharging (draining) the water in the cleaning chamber S. The exhaust port 40b is formed on the upper surface of the housing portion 40 and communicates the cleaning chamber S with the external space. The drain port 40c is formed at the lowermost end of the lower surface of the inclined housing portion 40, and communicates the cleaning chamber S with the external space. The exhaust port 40b does not necessarily have to be provided. Instead of not providing the exhaust port 40b, for example, a drainage port 40c having a relatively large diameter may be formed, and both drainage and exhaust may be performed at the drainage port 40c.

また、図1から図3に示すように、洗浄室S内には、ウエーハWの外周縁に接触してウエーハWの外周縁を洗浄する一対の洗浄部材41と、洗浄部材41及びウエーハWの外周縁に向かって洗浄水を供給(噴射)する一対の洗浄水ノズル42と、スリット40aをエアの層で塞ぐエアカーテン43とが設けられている。 Further, as shown in FIGS. 1 to 3, in the cleaning chamber S, a pair of cleaning members 41 that come into contact with the outer peripheral edge of the wafer W to clean the outer peripheral edge of the wafer W, and the cleaning member 41 and the wafer W are provided. A pair of cleaning water nozzles 42 that supply (inject) cleaning water toward the outer peripheral edge, and an air curtain 43 that closes the slit 40a with a layer of air are provided.

洗浄部材41は、クッション性を有する円柱状のスポンジ(ロールスポンジ)で形成されている。また、洗浄部材41は、当該洗浄部材41を回転させる回転手段としてのモータ44の軸45の先端に設けられている。洗浄部材41の軸方向とモータ44の軸方向は一致している。これらにより、洗浄部材41は、モータ44の軸45を中心に回転可能となっている。 The cleaning member 41 is formed of a columnar sponge (roll sponge) having a cushioning property. Further, the cleaning member 41 is provided at the tip of the shaft 45 of the motor 44 as a rotating means for rotating the cleaning member 41. The axial direction of the cleaning member 41 and the axial direction of the motor 44 are the same. As a result, the cleaning member 41 can rotate around the shaft 45 of the motor 44.

また、上記したように、洗浄部材41は2つ設けられており、一方の洗浄部材41aに対して他方の洗浄部材41bの軸方向が側面視及び上面視で交差している。更に洗浄部材41a、b各側面(円筒面)が、側面視及び上面視でウエーハWの外周縁と重なるように配置されている。 Further, as described above, two cleaning members 41 are provided, and the axial directions of the other cleaning member 41b intersect with one cleaning member 41a in a side view and a top view. Further, the side surfaces (cylindrical surface) of the cleaning members 41a and b are arranged so as to overlap the outer peripheral edge of the wafer W in the side view and the top view.

また、図1及び図3に示す側面視において、洗浄部材41a、bは、ウエーハWの延在方向に対してもそれぞれ交差するように配置される。更に、図2に示す上面視において、洗浄部材a、bは、ウエーハWの外周縁に対して周方向で異なる位置に配置されている。これにより、ウエーハWの外周縁の2箇所で洗浄部材41の側面を接触させることが可能である。 Further, in the side view shown in FIGS. 1 and 3, the cleaning members 41a and 41b are arranged so as to intersect each other with respect to the extending direction of the wafer W. Further, in the top view shown in FIG. 2, the cleaning members a and b are arranged at different positions in the circumferential direction with respect to the outer peripheral edge of the wafer W. As a result, the side surfaces of the cleaning member 41 can be brought into contact with each other at two locations on the outer peripheral edge of the wafer W.

詳細は後述するが、一方の洗浄部材41aは、ウエーハWの外周縁の上側面取り部C1を洗浄する上側洗浄部材を構成し、他方の洗浄部材41bは、ウエーハWの外周縁の下側面取り部C2を洗浄する下側洗浄部材を構成する。なお、2つの洗浄部材41a、bの配置関係は上記に限定されず、適宜変更が可能である。 Although the details will be described later, one cleaning member 41a constitutes an upper cleaning member for cleaning the upper side surface removing portion C1 of the outer peripheral edge of the wafer W, and the other cleaning member 41b constitutes the lower side surface removing portion of the outer peripheral edge of the wafer W. It constitutes a lower cleaning member for cleaning the portion C2. The arrangement relationship between the two cleaning members 41a and 41b is not limited to the above, and can be changed as appropriate.

2つの洗浄水ノズル42は、洗浄室S内に収容されるウエーハWを上下で挟むように対向配置されている。また、洗浄水ノズル42のそれぞれの先端がウエーハWの外周縁及び洗浄部材41の側面に向けられている。洗浄水ノズル42には、図示しない洗浄水供給源が接続されている。これにより、洗浄水ノズル42の先端から洗浄水を噴射することが可能である。 The two cleaning water nozzles 42 are arranged so as to face each other so as to sandwich the wafer W housed in the cleaning chamber S at the top and bottom. Further, the tips of the cleaning water nozzles 42 are directed toward the outer peripheral edge of the wafer W and the side surface of the cleaning member 41. A washing water supply source (not shown) is connected to the washing water nozzle 42. As a result, it is possible to inject cleaning water from the tip of the cleaning water nozzle 42.

エアカーテン43は、スリット40aが形成される筐体部40の内壁面に沿う上面視円弧状のエア噴射ノズル43aを2つ、スリット40aの幅方向で対向するように配置して構成される。図2に示すように、各エア噴射ノズル43aの円弧の長さは、スリット40aに挿入されるウエーハWの外周縁の両端に対して交差する(重なる)長さとなっている。また、図1及び図3に示すように、2つのエア噴射ノズル43aは、スリット40aに挿入されるウエーハWを厚み方向で挟むように配置される。エア噴射ノズル43aの噴射口は、それぞれウエーハWの上面又は下面に向けられている。スリット40aにウエーハWの一部が挿入された状態で各エア噴射ノズル43aからウエーハWの上面及び下面に向かってエアが噴射されることにより、スリット40aがエアの層で塞がれて洗浄室Sの内側と外側がエアで仕切られる。なお、洗浄室S内の排気は、エアカーテン43からエアを噴出させているときも洗浄室S内を負圧状態になる排気量で実施している。つまり、エアカーテン43から噴出しているエア量以上の排気量で排気している。 The air curtain 43 is configured by arranging two air injection nozzles 43a having an arc shape in a top view along the inner wall surface of the housing portion 40 in which the slit 40a is formed so as to face each other in the width direction of the slit 40a. As shown in FIG. 2, the arc length of each air injection nozzle 43a is a length that intersects (overlaps) with respect to both ends of the outer peripheral edge of the wafer W inserted into the slit 40a. Further, as shown in FIGS. 1 and 3, the two air injection nozzles 43a are arranged so as to sandwich the wafer W inserted into the slit 40a in the thickness direction. The injection port of the air injection nozzle 43a is directed to the upper surface or the lower surface of the wafer W, respectively. With a part of the wafer W inserted into the slit 40a, air is injected from each air injection nozzle 43a toward the upper surface and the lower surface of the wafer W, so that the slit 40a is blocked by the air layer and the cleaning chamber. The inside and outside of S are separated by air. It should be noted that the exhaust in the cleaning chamber S is carried out with the amount of exhaust that causes the inside of the cleaning chamber S to be in a negative pressure state even when the air is ejected from the air curtain 43. That is, the exhaust is performed with an exhaust amount equal to or larger than the amount of air ejected from the air curtain 43.

ところで、上記したように、インゴットからスライスされたウエーハWの表面には、うねりが形成される。このうねりを除去するため、ウエーハWの表面には保護部材として液状樹脂を介してテープが貼着される。これにより、ウエーハWの表面形状は液状樹脂に転写され、液状樹脂を硬化させた後にウエーハWの反対面を研削加工することでうねりが除去される。研削後は、硬化した樹脂及びテープが図示しない剥離装置によってウエーハWから剥離される。 By the way, as described above, undulations are formed on the surface of the wafer W sliced from the ingot. In order to remove this waviness, a tape is attached to the surface of the wafer W as a protective member via a liquid resin. As a result, the surface shape of the wafer W is transferred to the liquid resin, and the waviness is removed by grinding the opposite surface of the wafer W after curing the liquid resin. After grinding, the cured resin and tape are peeled from the wafer W by a peeling device (not shown).

このとき、ウエーハWの外周縁において、樹脂やテープの一部が剥がしきれずに残ってしまう場合がある。このように保護部材の剥がし残りが発生すると、例えば後の研削工程でウエーハWを保持テーブルに載置したときに保持テーブルとウエーハとの間に保護部材の一部が挟まってしまう。更に研削砥石でウエーハWを上面側から押し付けるとなれば、ウエーハWの下面に傷が付いてしまうだけでなく、ウエーハWの仕上げ厚みに影響を与えるおそれがある。 At this time, a part of the resin or the tape may not be completely peeled off and may remain on the outer peripheral edge of the wafer W. If the protective member is left unpeeled in this way, a part of the protective member is sandwiched between the holding table and the wafer when the wafer W is placed on the holding table in a subsequent grinding process, for example. Further, if the wafer W is pressed from the upper surface side by the grinding wheel, not only the lower surface of the wafer W is scratched, but also the finishing thickness of the wafer W may be affected.

そこで、本件発明者は、うねりを除去したウエーハWから保護部材を剥離した際に、ウエーハWの外周縁に剥がし残りが発生することを想定し、後の工程に進む前に当該剥がし残りを洗浄して除去することを着想した。具体的に本実施の形態では、保護部材を剥離した後のウエーハWの外周縁を所定の洗浄室Sに挿入し、ウエーハWの外周縁に残った保護部材を洗浄室S内でスポンジ等の洗浄部材41を用いて、こそぎ落とす構成とした。これにより、後の工程(例えば研削工程)に進む前に予め保護部材を除去することができ、ウエーハの厚み不良の発生を防止することが可能になった。また、洗浄室Sの挿入口(スリット40a)をエアカーテンで塞いだことにより、洗浄室S内の水が直に挿入口から外に排出されることが無く、除去した保護部材がウエーハWに再付着するのを防止することが可能である。 Therefore, the present inventor assumes that when the protective member is peeled off from the wafer W from which the waviness has been removed, a peeling residue is generated on the outer peripheral edge of the wafer W, and the peeling residue is washed before proceeding to a subsequent step. I came up with the idea of removing it. Specifically, in the present embodiment, the outer peripheral edge of the wafer W after the protective member is peeled off is inserted into a predetermined cleaning chamber S, and the protective member remaining on the outer peripheral edge of the wafer W is inserted into the cleaning chamber S by a sponge or the like. The cleaning member 41 was used to scrape it off. As a result, the protective member can be removed in advance before proceeding to a later step (for example, a grinding step), and it is possible to prevent the occurrence of poor thickness of the wafer. Further, by closing the insertion port (slit 40a) of the cleaning chamber S with an air curtain, the water in the cleaning chamber S is not directly discharged to the outside from the insertion port, and the removed protective member becomes the wafer W. It is possible to prevent reattachment.

次に、図1及び図4を参照して、本実施の形態に係るウエーハ洗浄装置の動作について説明する。図4は、本実施の形態に係るウエーハ洗浄装置の動作説明図である。 Next, the operation of the wafer cleaning device according to the present embodiment will be described with reference to FIGS. 1 and 4. FIG. 4 is an operation explanatory view of the wafer cleaning device according to the present embodiment.

図1に示すように、テーブル3は、ガイドレール81の一端側(紙面左側)の搬入位置に位置付けられている。また、テーブル3は、保持面30が水平となるように、その傾きが調整されている。搬送手段1は、保護部材が剥離されたウエーハWをテーブル3に搬入する。このとき、ウエーハWは、中心がテーブル3の回転中心と一致するように保持面30上に載置され、吸引保持される。 As shown in FIG. 1, the table 3 is positioned at the carry-in position on one end side (left side of the paper surface) of the guide rail 81. Further, the inclination of the table 3 is adjusted so that the holding surface 30 is horizontal. The transport means 1 carries the wafer W from which the protective member has been peeled off to the table 3. At this time, the wafer W is placed on the holding surface 30 so that the center coincides with the rotation center of the table 3, and is sucked and held.

そして、テーブル3は、保持面30がガイドレール81の延在方向(テーブル3の移動方向)と平行になるように(テーブル3の他端側(右側)が下方となるように)傾きが調整され、移動手段8によって他端側(紙面右側)の洗浄手段4に移動される。図4に示すように、テーブル3が洗浄手段4に接近する位置に位置付けられると、ウエーハWの外周縁の一部がスリット40aを通じて洗浄室S内に挿入される。 The inclination of the table 3 is adjusted so that the holding surface 30 is parallel to the extending direction of the guide rail 81 (moving direction of the table 3) (the other end side (right side) of the table 3 is downward). Then, it is moved to the cleaning means 4 on the other end side (right side of the paper surface) by the moving means 8. As shown in FIG. 4, when the table 3 is positioned close to the cleaning means 4, a part of the outer peripheral edge of the wafer W is inserted into the cleaning chamber S through the slit 40a.

洗浄室S内では、ウエーハWの外周縁が洗浄部材41に押し込まれ、洗浄部材41が僅かに凹む。この結果、ウエーハWの上側面取り部C1が洗浄部材41a(上側洗浄部材)の側面に接触し、ウエーハWの下側面取り部C2が洗浄部材41b(下側洗浄部材)の側面に接触した状態となる。 In the cleaning chamber S, the outer peripheral edge of the wafer W is pushed into the cleaning member 41, and the cleaning member 41 is slightly recessed. As a result, the upper side surface removing portion C1 of the wafer W is in contact with the side surface of the cleaning member 41a (upper cleaning member), and the lower side surface removing portion C2 of the wafer W is in contact with the side surface of the cleaning member 41b (lower cleaning member). It becomes.

洗浄を実施する際には、一対のエア噴射ノズル43aからウエーハWに向かってエアが噴射することにより、スリット40aとウエーハWとの間にエアの層が形成され、スリット40aが塞がれる。なお、エアカーテン43で使用したエアは、排気口40bから排出することが可能である。 When cleaning is performed, air is injected from the pair of air injection nozzles 43a toward the wafer W, so that an air layer is formed between the slit 40a and the wafer W, and the slit 40a is closed. The air used in the air curtain 43 can be exhausted from the exhaust port 40b.

そして、洗浄水ノズル42からウエーハWの外周縁及び洗浄部材41a、bに向かって洗浄水を噴射しながら、テーブル3及び洗浄部材41a、bを回転させると、ウエーハWの外周縁を全周にわたって洗浄することができる。具体的に、洗浄部材41aによって上側面取り部C1が洗浄され、洗浄部材41bによって下側面取り部C2が洗浄される。これらにより、ウエーハWの外周縁に付着した(残留した)保護部材等のゴミを適切に除去(洗浄)することが可能である。 Then, when the table 3 and the cleaning members 41a and b are rotated while injecting the cleaning water from the cleaning water nozzle 42 toward the outer peripheral edge of the wafer W and the cleaning members 41a and b, the outer peripheral edge of the wafer W is covered over the entire circumference. Can be washed. Specifically, the cleaning member 41a cleans the upper side surface removing portion C1, and the cleaning member 41b cleans the lower side surface removing portion C2. As a result, it is possible to appropriately remove (clean) dust such as protective members adhering to (residual) on the outer peripheral edge of the wafer W.

例えば、図2に示すように、テーブル3が紙面上反時計回りに回転される場合、所定箇所のウエーハWの外周縁は、ウエーハWの回転方向手前側(紙面下側)のスリット40a端部から洗浄室S内に入り込む。洗浄室S内で当該ウエーハWの外周縁は、洗浄部材41bに接触した後、洗浄部材41aに接触する。そして、当該ウエーハの外周縁は、エアカーテン43を通過してウエーハWの回転方向奥側(紙面上側)のスリット40a端部から洗浄室Sの外側に出る。 For example, as shown in FIG. 2, when the table 3 is rotated counterclockwise on the paper surface, the outer peripheral edge of the wafer W at a predetermined position is the end portion of the slit 40a on the front side (lower side of the paper surface) of the wafer W in the rotation direction. Enter the cleaning room S from. In the cleaning chamber S, the outer peripheral edge of the wafer W comes into contact with the cleaning member 41b and then with the cleaning member 41a. Then, the outer peripheral edge of the wafer passes through the air curtain 43 and exits from the end of the slit 40a on the back side (upper side of the paper surface) in the rotation direction of the wafer W to the outside of the cleaning chamber S.

スリット40aの出口側では、ウエーハWの外周縁にエアカーテン43のエアが衝突することで、当該ウエーハWの外周縁に付着した洗浄水等が吹き飛ばされる。これにより、洗浄部材41a、bで除去されたゴミの再付着が防止される。また、ウエーハWに付着した洗浄水を吹き飛ばしウエーハWの上面と下面とが乾燥される。このように、エアカーテン43によってウエーハWの洗浄効果が高められている。 On the outlet side of the slit 40a, the air of the air curtain 43 collides with the outer peripheral edge of the wafer W, so that the washing water or the like adhering to the outer peripheral edge of the wafer W is blown off. As a result, the reattachment of the dust removed by the cleaning members 41a and 41b is prevented. Further, the washing water adhering to the wafer W is blown off to dry the upper surface and the lower surface of the wafer W. In this way, the cleaning effect of the wafer W is enhanced by the air curtain 43.

また、洗浄室Sが傾けられているため、ウエーハWを洗浄した後の洗浄水は、自重で筐体部40の底面に向かって流れ落ち、筐体部40の最下端である排水口から排出される。このように、排気と排水を別々の経路で排出する構成としたことにより、エア及び洗浄水のそれぞれの排出性が向上されている。 Further, since the cleaning chamber S is tilted, the cleaning water after cleaning the wafer W flows down toward the bottom surface of the housing portion 40 by its own weight, and is discharged from the drain port which is the lowermost end of the housing portion 40. NS. In this way, by adopting a configuration in which the exhaust gas and the drainage gas are discharged through separate routes, the discharge properties of the air and the washing water are improved.

次に、図5を参照して、洗浄部材の消耗を検出する構成について説明する。図5は、本実施の形態に係るウエーハ洗浄装置において、洗浄部材の消耗を検出する構成を示す模式図である。図5Aは図2に対応する洗浄手段の上面模式図であり、図5Bは図1に対応する洗浄手段の側面模式図である。図5では説明の便宜上、既出の構成を一部省略している。 Next, with reference to FIG. 5, a configuration for detecting wear of the cleaning member will be described. FIG. 5 is a schematic view showing a configuration for detecting wear of a cleaning member in the wafer cleaning device according to the present embodiment. 5A is a schematic top view of the cleaning means corresponding to FIG. 2, and FIG. 5B is a schematic side view of the cleaning means corresponding to FIG. In FIG. 5, for convenience of explanation, a part of the existing configuration is omitted.

上記したように、ウエーハWの外周縁に洗浄部材41の側面を接触させて洗浄を繰り返すと、洗浄部材41は消耗(摩耗)する。そこで、本件発明者は更に、洗浄部材41の消耗を事前に検出することを着想した。具体的には図5に示すように、ウエーハ洗浄装置2(図1参照)は、ウエーハWの外周縁に対する洗浄部材41の接触面(側面)を検出可能なセンサ46と、センサ46の出力に基づいて洗浄部材41が消耗しているか否かを判断する判断部47とを備えている。 As described above, when the side surface of the cleaning member 41 is brought into contact with the outer peripheral edge of the wafer W and cleaning is repeated, the cleaning member 41 is consumed (weared). Therefore, the inventor of the present invention further conceived to detect the wear of the cleaning member 41 in advance. Specifically, as shown in FIG. 5, the wafer cleaning device 2 (see FIG. 1) has a sensor 46 capable of detecting the contact surface (side surface) of the cleaning member 41 with respect to the outer peripheral edge of the wafer W, and the output of the sensor 46. A determination unit 47 for determining whether or not the cleaning member 41 is worn is provided based on the determination unit 47.

センサ46は、検出光を投光する投光部48と当該検出光を受光する受光部49とを備えた透過型センサで構成される。図5Aに示すように、投光部48及び受光部49は、筐体部40の外側に設けられる。具体的に投光部48及び受光部49は、筐体部40の側壁(円筒部)に形成されるスリット40aの両端部分にそれぞれが対向するように配置される。投光部48は、スリット40aの両端を横断させる検出光を受光部49に向かって投光する。なお、センサ46の配置箇所はこれに限定されず、洗浄部材41の側面を検出可能であれば、どの位置に設けられてもよい。例えば、洗浄室S内にセンサ46を配置してもよい。 The sensor 46 is composed of a transmissive sensor including a light projecting unit 48 that emits detection light and a light receiving unit 49 that receives the detected light. As shown in FIG. 5A, the light emitting unit 48 and the light receiving unit 49 are provided on the outside of the housing unit 40. Specifically, the light emitting portion 48 and the light receiving portion 49 are arranged so as to face both end portions of the slit 40a formed on the side wall (cylindrical portion) of the housing portion 40. The light projecting unit 48 projects the detection light that crosses both ends of the slit 40a toward the light receiving unit 49. The location of the sensor 46 is not limited to this, and the sensor 46 may be provided at any position as long as the side surface of the cleaning member 41 can be detected. For example, the sensor 46 may be arranged in the cleaning chamber S.

判断部47は、装置各部を統括制御する制御手段(不図示)の一部で構成され、各種処理を実行するプロセッサやメモリ等により構成される。メモリは、用途に応じてROM(Read Only Memory)、RAM(Random Access Memory)等の一つ又は複数の記憶媒体で構成される。判断部47は、洗浄部材41の消耗判断の基準となる設定値(閾値)を予めメモリに記憶している。 The determination unit 47 is composed of a part of control means (not shown) that collectively controls each unit of the device, and is composed of a processor, a memory, and the like that execute various processes. The memory is composed of one or a plurality of storage media such as ROM (Read Only Memory) and RAM (Random Access Memory) depending on the intended use. The determination unit 47 stores in advance a set value (threshold value) that serves as a reference for determining the consumption of the cleaning member 41 in the memory.

図5Bに示すように、ウエーハWの洗浄が繰り返されて洗浄部材41が消耗すると、洗浄部材41に対するウエーハWの外周縁の接触位置が、テーブル3の移動方向奥側(紙面右下方)に僅かにずれる。この場合、移動手段8は、このズレ量Dの分だけテーブル3を洗浄手段4に接近する方向に移動させる。判断部47は、このときのテーブル3の移動量を記憶し、当該移動量が予め設定した設定値より大きくなったら、洗浄部材41が消耗したと判断する。この場合、洗浄手段4は、洗浄部材41の消耗をアラーム等で報知することで、作業者に対して洗浄部材41の交換を促すことが可能である。 As shown in FIG. 5B, when the cleaning member 41 is exhausted due to repeated cleaning of the wafer W, the contact position of the outer peripheral edge of the wafer W with respect to the cleaning member 41 is slightly on the back side in the moving direction of the table 3 (lower right of the paper surface). It shifts. In this case, the moving means 8 moves the table 3 in the direction of approaching the cleaning means 4 by the amount of the deviation D. The determination unit 47 stores the movement amount of the table 3 at this time, and when the movement amount becomes larger than the preset value, it is determined that the cleaning member 41 has been consumed. In this case, the cleaning means 4 can urge the operator to replace the cleaning member 41 by notifying the wear of the cleaning member 41 by an alarm or the like.

以上説明したように、本実施の形態によれば、洗浄室S内において、ウエーハWの外周縁に洗浄部材41を接触させた状態でテーブル3及び洗浄部材41を回転させることにより、ウエーハWの外周縁を洗浄することができる。このとき、洗浄手段4とウエーハWに洗浄水が供給されているため、ウエーハWの洗浄効果が高められている。また、洗浄中は洗浄室Sがエアカーテン43によって仕切られているため、洗浄室S内でウエーハWに洗浄水が供給されても、洗浄水が挿入口(スリット40a)から直に洗浄室Sの外側に飛散することなく排水口40cから排出することが可能である。以上のように、ウエーハWの外周縁にゴミが付着した場合であっても、ウエーハWの外周縁を洗浄してウエーハWの厚み不良の発生を防止することができる。また、ウエーハWに対する洗浄部材41の接触面をセンサ46でウォッチングすることにより、洗浄部材41の消耗を認識することが可能である。 As described above, according to the present embodiment, the wafer W is formed by rotating the table 3 and the cleaning member 41 in a state where the cleaning member 41 is in contact with the outer peripheral edge of the wafer W in the cleaning chamber S. The outer periphery can be cleaned. At this time, since the cleaning water is supplied to the cleaning means 4 and the wafer W, the cleaning effect of the wafer W is enhanced. Further, since the cleaning chamber S is partitioned by the air curtain 43 during cleaning, even if the cleaning water is supplied to the wafer W in the cleaning chamber S, the cleaning water is directly discharged from the insertion port (slit 40a) in the cleaning chamber S. It is possible to discharge from the drain port 40c without scattering to the outside of the. As described above, even when dust adheres to the outer peripheral edge of the wafer W, the outer peripheral edge of the wafer W can be cleaned to prevent the occurrence of poor thickness of the wafer W. Further, by watching the contact surface of the cleaning member 41 with respect to the wafer W with the sensor 46, it is possible to recognize the wear of the cleaning member 41.

なお、上記実施の形態では、洗浄手段4を傾けて配置し、テーブル3を傾け手段7で傾ける構成としたが、この構成に限定されない。洗浄手段4は、傾けて配置されなくてもよく、傾け手段7は必ずしも設けられなくてよい。また、図6に示す構成も可能である。図6は、変形例に係るウエーハ洗浄装置を示す模式図である。変形例では、説明の便宜上、本実施の形態と同一名称の構成を同一の符号で示している。 In the above embodiment, the cleaning means 4 is tilted and arranged, and the table 3 is tilted by the tilting means 7, but the configuration is not limited to this. The cleaning means 4 does not have to be tilted and arranged, and the tilting means 7 does not necessarily have to be provided. The configuration shown in FIG. 6 is also possible. FIG. 6 is a schematic view showing a wafer cleaning device according to a modified example. In the modified example, for convenience of explanation, the configuration having the same name as that of the present embodiment is indicated by the same reference numerals.

図6では、ガイドレール81の一端側に傾け手段7の回動軸5aが設けられており、テーブル3と洗浄手段4とが一体的に傾斜可能に構成されている(図6A参照)。この場合も、ウエーハWの洗浄を実施する際に洗浄手段4側が下方となるようにテーブル3及び洗浄手段4を傾けることで(図6B参照)、洗浄水の排水性を向上することが可能である。 In FIG. 6, a rotating shaft 5a of the tilting means 7 is provided on one end side of the guide rail 81, and the table 3 and the cleaning means 4 are configured to be integrally tiltable (see FIG. 6A). Also in this case, it is possible to improve the drainage property of the cleaning water by tilting the table 3 and the cleaning means 4 so that the cleaning means 4 side is downward when cleaning the wafer W (see FIG. 6B). be.

また、上記実施の形態では、2つの洗浄部材41a、bでウエーハWの外周縁を洗浄する構成としたが、この構成に限定されない。図6の変形例に示すように、単一の洗浄部材41でウエーハWの外周縁を洗浄してもよい。図6では、洗浄部材41の軸方向がウエーハWの面方向に対して垂直となるように配置されている。ウエーハWの外周縁を洗浄部材41に押し付けると、ウエーハWの上側面取り部C1及び下側面取り部C2を洗浄部材41の側面に接触させることができる。この場合であっても、ウエーハWの外周縁を適切に洗浄することが可能である。 Further, in the above embodiment, the outer peripheral edge of the wafer W is cleaned by the two cleaning members 41a and 41b, but the configuration is not limited to this. As shown in the modified example of FIG. 6, the outer peripheral edge of the wafer W may be cleaned with a single cleaning member 41. In FIG. 6, the cleaning member 41 is arranged so that the axial direction is perpendicular to the surface direction of the wafer W. When the outer peripheral edge of the wafer W is pressed against the cleaning member 41, the upper side surface removing portion C1 and the lower side surface removing portion C2 of the wafer W can be brought into contact with the side surface of the cleaning member 41. Even in this case, it is possible to properly clean the outer peripheral edge of the wafer W.

また、上記実施の形態では、判断部47は、テーブル3の移動量から洗浄部材41の消耗を判断する構成としたが、この構成に限定されない。例えば、検出光が洗浄部材41によって遮光されるようにセンサ46(投光部48及び受光部49)を配置し、判断部47が、洗浄部材41の消耗に応じて変化する検出光の受光量に基づいて洗浄部材41の消耗を判断してもよい。この場合、判断部47は、受光部49が受光する検出光の受光量が予め設定した設定値より大きくなったら洗浄部材41が消耗したと判断することができる。 Further, in the above embodiment, the determination unit 47 is configured to determine the wear of the cleaning member 41 from the amount of movement of the table 3, but is not limited to this configuration. For example, the sensor 46 (light emitting unit 48 and light receiving unit 49) is arranged so that the detected light is shielded by the cleaning member 41, and the determination unit 47 receives the detected light that changes according to the consumption of the cleaning member 41. The wear of the cleaning member 41 may be determined based on the above. In this case, the determination unit 47 can determine that the cleaning member 41 has been consumed when the amount of the detected light received by the light receiving unit 49 becomes larger than a preset value.

また、上記実施の形態では、センサ46を透過型センサで構成したが、これに限定されず、適宜変更が可能である。また、センサ46に限らず、例えば、スキャナで洗浄部材41の側面形状を認識し、判断部47がその側面形状に基づいて洗浄部材41の消耗を判断してもよい。 Further, in the above embodiment, the sensor 46 is composed of a transmissive sensor, but the present invention is not limited to this, and changes can be made as appropriate. Further, not limited to the sensor 46, for example, a scanner may recognize the side surface shape of the cleaning member 41, and the determination unit 47 may determine the wear of the cleaning member 41 based on the side surface shape.

また、上記実施の形態では、洗浄部材41として、クッション性を有するスポンジを例に挙げて説明したが、これに限定されない。洗浄部材41は、例えば、ブラシや布、たわし等、適宜変更が可能である。 Further, in the above embodiment, as the cleaning member 41, a sponge having a cushioning property has been described as an example, but the present invention is not limited to this. The cleaning member 41 can be appropriately changed, for example, a brush, a cloth, a scrubbing brush, or the like.

また、上記実施の形態では、保護部材を剥離した後のウエーハWの外周縁を洗浄する場合について説明したが、これに限定されない。本発明は、ウエーハWの外周縁を洗浄するものに適用可能であり、例えば、エッジトリミング後のウエーハWの外周縁を洗浄する構成にも適用可能である。 Further, in the above embodiment, the case where the outer peripheral edge of the wafer W is cleaned after the protective member is peeled off has been described, but the present invention is not limited to this. The present invention is applicable to those for cleaning the outer peripheral edge of the wafer W, and is also applicable to, for example, a configuration for cleaning the outer peripheral edge of the wafer W after edge trimming.

また、本実施の形態及び変形例を説明したが、本発明の他の実施の形態として、上記実施の形態及び変形例を全体的又は部分的に組み合わせたものでもよい。 Moreover, although the present embodiment and the modified example have been described, as another embodiment of the present invention, the above-described embodiment and the modified example may be combined in whole or in part.

また、本発明の実施の形態は上記の実施の形態に限定されるものではなく、本発明の技術的思想の趣旨を逸脱しない範囲において様々に変更、置換、変形されてもよい。さらには、技術の進歩又は派生する別技術によって、本発明の技術的思想を別の仕方で実現することができれば、その方法を用いて実施されてもよい。したがって、特許請求の範囲は、本発明の技術的思想の範囲内に含まれ得る全ての実施形態をカバーしている。 Further, the embodiment of the present invention is not limited to the above-described embodiment, and may be variously modified, replaced, or modified without departing from the spirit of the technical idea of the present invention. Furthermore, if the technical idea of the present invention can be realized in another way by the advancement of technology or another technology derived from it, it may be carried out by using that method. Therefore, the scope of claims covers all embodiments that may be included within the scope of the technical idea of the present invention.

以上説明したように、本発明は、ウエーハの外周縁を洗浄してウエーハの厚み不良の発生を防止することができるという効果を有し、特に、うねりを除去した後のウエーハの外周縁を洗浄するウエーハ洗浄装置に有用である。 As described above, the present invention has the effect of cleaning the outer peripheral edge of the wafer to prevent the occurrence of poor thickness of the wafer, and in particular, cleaning the outer peripheral edge of the wafer after removing the waviness. It is useful for wafer cleaning equipment.

2 ウエーハ洗浄装置
3 テーブル
30 保持面
4 洗浄手段
40a スリット(挿入口)
40b 排気口
40c 排水口
41 洗浄部材
41a 洗浄部材(上側洗浄部材)
41b 洗浄部材(下側洗浄部材)
42 洗浄水ノズル
43 エアカーテン
44 モータ(回転手段)
46 センサ(透過型センサ)
47 判断部
48 投光部
49 受光部
6 テーブル回転手段
8 移動手段
S 洗浄室
W ウエーハ
C 面取り部
C1 上側面取り部(面取り部)
C2 下側面取り部(面取り部)
2 Wafer cleaning device 3 Table 30 Holding surface 4 Cleaning means 40a Slit (insertion port)
40b Exhaust port 40c Drain port 41 Cleaning member 41a Cleaning member (upper cleaning member)
41b Cleaning member (lower cleaning member)
42 Washing water nozzle 43 Air curtain 44 Motor (rotating means)
46 sensor (transmissive sensor)
47 Judgment part 48 Light emitting part 49 Light receiving part 6 Table rotating means 8 Moving means S Cleaning room W Wafer C Chamfering part C1 Upper side chamfering part (chamfering part)
C2 Lower side chamfer (chamfer)

Claims (4)

ウエーハの外周縁を洗浄するウエーハ洗浄装置であって、
ウエーハの外周部分をはみ出させ中央を保持する保持面を有するテーブルと、
該テーブルの中心を軸に回転させるテーブル回転手段と、
該テーブルからはみ出したウエーハの外周縁を洗浄する洗浄手段と、
該テーブルと該洗浄手段とを相対的に接近及び離間する方向に移動させる移動手段と、を備え、
該洗浄手段は、
ウエーハの外周縁の一部を収容する洗浄室と、
該洗浄室内にウエーハの外周縁の一部を挿入する挿入口と、
該挿入口から挿入したウエーハの外周縁に接触する洗浄部材と、
該洗浄部材を回転させる回転手段と、
該洗浄部材とウエーハとに洗浄水を供給する洗浄水ノズルと、
該挿入口から挿入したウエーハの上面及び下面に向かってエアを噴射させウエーハを該洗浄室の内側と外側とで仕切るエアカーテンと、
ウエーハを洗浄した後の洗浄水を排水する排水口と、
該エアカーテンに使用したエアを排気する排気口と、を備え、
ウエーハの外周縁に接触する該洗浄部材の接触面が該挿入口から検出可能であって、該挿入口の両端を横断させる検出光を投光する投光部と該検出光を受光する受光部とを備えた透過型センサと、
該移動手段で該洗浄手段に接近する方向に該テーブルを移動させ、該検出光が遮光されたときの該テーブルの移動量が予め設定した設定値より大きくなったら該洗浄部材が消耗したと判断する判断部と、を備え
該移動手段により該テーブルと該洗浄手段とを接近させ該テーブルが保持したウエーハの外周縁に該洗浄部材を接触させ、該洗浄部材を回転させ、該テーブルを回転させ、ウエーハの外周縁を洗浄するウエーハ洗浄装置。
A wafer cleaning device that cleans the outer periphery of a wafer.
A table with a holding surface that sticks out the outer peripheral part of the wafer and holds the center,
A table rotating means for rotating the center of the table as an axis,
A cleaning means for cleaning the outer peripheral edge of the wafer protruding from the table, and
The table and the cleaning means are provided with a moving means for moving the table and the cleaning means in a direction of relatively approaching and separating from each other.
The cleaning means is
A cleaning room that houses a part of the outer periphery of the wafer,
An insertion port for inserting a part of the outer peripheral edge of the wafer into the washing chamber,
A cleaning member that comes into contact with the outer peripheral edge of the wafer inserted from the insertion port, and
A rotating means for rotating the cleaning member and
A cleaning water nozzle that supplies cleaning water to the cleaning member and the wafer, and
An air curtain that injects air toward the upper and lower surfaces of the wafer inserted from the insertion port to partition the wafer between the inside and the outside of the cleaning chamber.
A drainage port for draining the washing water after cleaning the wafer,
It is provided with an exhaust port for exhausting the air used for the air curtain.
The contact surface of the cleaning member in contact with the outer peripheral edge of the weight can be detected from the insertion port, and a light projecting unit that emits detection light that traverses both ends of the insertion port and a light receiving unit that receives the detection light. With a transmissive sensor equipped with
The table is moved in a direction approaching the cleaning means by the moving means, and when the moving amount of the table when the detection light is shielded becomes larger than a preset set value, it is determined that the cleaning member has been consumed. The table and the cleaning means are brought close to each other by the moving means, the cleaning member is brought into contact with the outer peripheral edge of the wafer held by the table, the cleaning member is rotated, and the table is rotated. , A waiha cleaning device that cleans the outer periphery of the waha.
ウエーハの外周縁を洗浄するウエーハ洗浄装置であって、A wafer cleaning device that cleans the outer periphery of a wafer.
ウエーハの外周部分をはみ出させ中央を保持する保持面を有するテーブルと、A table with a holding surface that sticks out the outer peripheral part of the wafer and holds the center,
該テーブルの中心を軸に回転させるテーブル回転手段と、A table rotating means for rotating the center of the table as an axis,
該テーブルからはみ出したウエーハの外周縁を洗浄する洗浄手段と、A cleaning means for cleaning the outer peripheral edge of the wafer protruding from the table, and
該テーブルと該洗浄手段とを相対的に接近及び離間する方向に移動させる移動手段と、を備え、The table and the cleaning means are provided with a moving means for moving the table and the cleaning means in a direction of relatively approaching and separating from each other.
該洗浄手段は、The cleaning means is
ウエーハの外周縁の一部を収容する洗浄室と、A cleaning room that houses a part of the outer periphery of the wafer,
該洗浄室内にウエーハの外周縁の一部を挿入する挿入口と、An insertion port for inserting a part of the outer peripheral edge of the wafer into the washing chamber,
該挿入口から挿入したウエーハの外周縁に接触する洗浄部材と、A cleaning member that comes into contact with the outer peripheral edge of the wafer inserted from the insertion port, and
該洗浄部材を回転させる回転手段と、A rotating means for rotating the cleaning member and
該洗浄部材とウエーハとに洗浄水を供給する洗浄水ノズルと、A cleaning water nozzle that supplies cleaning water to the cleaning member and the wafer, and
該挿入口から挿入したウエーハの上面及び下面に向かってエアを噴射させウエーハを該洗浄室の内側と外側とで仕切るエアカーテンと、An air curtain that injects air toward the upper and lower surfaces of the wafer inserted from the insertion port to partition the wafer between the inside and the outside of the cleaning chamber.
ウエーハを洗浄した後の洗浄水を排水する排水口と、A drainage port for draining the washing water after cleaning the wafer,
該エアカーテンに使用したエアを排気する排気口と、を備え、It is provided with an exhaust port for exhausting the air used for the air curtain.
ウエーハの外周縁に接触する該洗浄部材の接触面が該挿入口から検出可能であって、該挿入口の両端を横断させる検出光を投光する投光部と該検出光を受光する受光部とを備えた透過型センサと、The contact surface of the cleaning member in contact with the outer peripheral edge of the weight can be detected from the insertion port, and a light projecting unit that emits detection light that traverses both ends of the insertion port and a light receiving unit that receives the detection light. With a transmissive sensor equipped with
該検出光は、該洗浄部材によって遮光されていて、受光部が受光する受光量が予め設定した設定値より大きくなったら該洗浄部材が消耗したと判断する判断部と、を備え、The detection light is shielded by the cleaning member, and includes a determination unit that determines that the cleaning member has been consumed when the amount of light received by the light receiving unit becomes larger than a preset set value.
該移動手段により該テーブルと該洗浄手段とを接近させ該テーブルが保持したウエーハの外周縁に該洗浄部材を接触させ、該洗浄部材を回転させ、該テーブルを回転させ、ウエーハの外周縁を洗浄するウエーハ洗浄装置。The table and the cleaning means are brought close to each other by the moving means, the cleaning member is brought into contact with the outer peripheral edge of the wafer held by the table, the cleaning member is rotated, the table is rotated, and the outer peripheral edge of the wafer is cleaned. Wafer cleaning device.
該テーブルはウエーハの外周縁が該洗浄室に挿入された部分を低く傾けてウエーハを洗浄する請求項1又は請求項2に記載のウエーハ洗浄装置。 The wafer cleaning device according to claim 1 or 2 , wherein the table is used to clean the wafer by tilting the portion where the outer peripheral edge of the wafer is inserted into the cleaning chamber low. ウエーハの外周縁には面取り部を備えていて、
該洗浄部材は、
ウエーハの上面に連接する面取り部の上側を洗浄する上側洗浄部材と、
ウエーハの下面に連接する面取り部の下側を洗浄する下側洗浄部材と、を備えた請求項1から請求項3のいずれかに記載のウエーハ洗浄装置。
The outer peripheral edge of the wafer has a chamfered part,
The cleaning member is
An upper cleaning member that cleans the upper side of the chamfered part that is connected to the upper surface of the wafer,
The wafer cleaning device according to any one of claims 1 to 3 , further comprising a lower cleaning member for cleaning the lower side of the chamfered portion connected to the lower surface of the wafer.
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