JP6904769B2 - 表示装置 - Google Patents
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- JP6904769B2 JP6904769B2 JP2017083615A JP2017083615A JP6904769B2 JP 6904769 B2 JP6904769 B2 JP 6904769B2 JP 2017083615 A JP2017083615 A JP 2017083615A JP 2017083615 A JP2017083615 A JP 2017083615A JP 6904769 B2 JP6904769 B2 JP 6904769B2
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- transistor
- layer
- insulating layer
- semiconductor layer
- electrode
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- 239000004065 semiconductor Substances 0.000 claims description 339
- 239000004973 liquid crystal related substance Substances 0.000 claims description 78
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| KR20220020829A (ko) * | 2019-06-12 | 2022-02-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 금속 산화물, 및 금속 산화물을 가지는 트랜지스터 |
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| CN113270046B (zh) * | 2020-02-14 | 2023-07-07 | 群创光电股份有限公司 | 电子装置 |
| CN112271217A (zh) * | 2020-11-02 | 2021-01-26 | 中国工程物理研究院电子工程研究所 | 一种抗冲击场效应晶体管及抗冲击低噪声放大器 |
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| CN113534551B (zh) * | 2021-07-21 | 2024-04-16 | 北京京东方光电科技有限公司 | 一种显示基板和显示面板 |
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