JP2018151630A - 表示システム - Google Patents
表示システム Download PDFInfo
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- JP2018151630A JP2018151630A JP2018042636A JP2018042636A JP2018151630A JP 2018151630 A JP2018151630 A JP 2018151630A JP 2018042636 A JP2018042636 A JP 2018042636A JP 2018042636 A JP2018042636 A JP 2018042636A JP 2018151630 A JP2018151630 A JP 2018151630A
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- transistor
- layer
- display
- insulating layer
- electrode
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- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
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- G—PHYSICS
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
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- G09G5/00—Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators
- G09G5/003—Details of a display terminal, the details relating to the control arrangement of the display terminal and to the interfaces thereto
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Abstract
【解決手段】表示装置と、ディスプレイコントローラと、を含む表示システム。表示装置は、m行n列(mおよびnは、それぞれ2以上の整数)に配置された複数の画素を有する。ディスプレイコントローラは、設定パラメータに基づいて画像データを加工する機能と、加工された画像データを表示装置に供給する機能と、を有する。また、画像データの加工に用いる設定パラメータは、行番号に応じて決定される。
【選択図】図1
Description
本発明の一態様の表示システム1000の構成例について、図面を用いて説明する。
図1は、表示システム1000の構成例を説明するためのブロック図である。表示システム1000は、ディスプレイコントローラ100、表示装置110、プロセッサ120、DRAM130、DRAMコントローラ131、およびクロック生成回路160を有する。
ディスプレイコントローラ100は、入力I/F101、マスタコントローラ102、データ処理回路103、フレームメモリ104、出力I/F105、タイミングコントローラ106、レジスタチェーン107、および設定レジスタ108を有する。ディスプレイコントローラ100とプロセッサ120は電気的に接続される。
表示装置110は、データドライバ111、ゲートドライバ112、表示部113を有する。表示部113は、複数の画素114を有する。
プロセッサ120は、データ処理回路121、レジスタ値生成回路122、プロセッサコントローラ123を有する。
続いて、表示システム1000の動作例について説明する。本実施の形態では、1つの画素115が4つの画素114を含む場合の動作例について説明する。具体的には、画素115が図2(E)の構成を有する場合に、8K解像度の表示部113の行毎にデータ処理回路103の設定パラメータを変更する動作について説明する。
信号syncがアクティブかを判断する(ステップS601。図5参照。)。
信号syncがアクティブである場合、行数を数える2ビットカウンタ信号In_en_cnt[1:0]をリセットする(ステップS602)。
In_en_cnt[1:0]に応じて、context[1:0]の値を決定する(ステップS603)。本実施の形態では、context[1:0]はIn_en_cnt[1:0]と同じ値になる。
context[1:0]の値に応じて、設定パラメータQ(Q0乃至Q3のいずれか)を決定する(ステップS604)。context[1:0]が0の場合、設定パラメータQとしてラッチ群221に保持されている設定パラメータQ0を用いる。context[1:0]が1の場合、設定パラメータQとしてラッチ群222に保持されている設定パラメータQ1を用いる。context[1:0]が2の場合、設定パラメータQとしてラッチ群223に保持されている設定パラメータQ2を用いる。context[1:0]が3の場合、設定パラメータQとしてラッチ群224に保持されている設定パラメータQ3を用いる。
設定パラメータQをデータ処理回路103に設定する(ステップS605)。
設定パラメータQに従い、データ処理回路103で入力データInを補正して、出力データOutを生成する(ステップS606)。
出力データOutを、出力I/F105を介して、表示装置110のデータドライバ111に伝送する(ステップS607)。
In_en_cnt[1:0]に1を加える(ステップS608)。なお、1を加える前のIn_en_cnt[1:0]が3である場合は、In_en_cnt[1:0]を0にする。
図6に、表示システム1000の変形例である表示システム1000Aのブロック図を示す。表示システム1000Aは、表示システム1000にタッチセンサ140と、タッチセンサコントローラ109を加えた構成を有する。
本実施の形態では、画素114の構成例について図面を用いて説明する。
表示素子462には、様々な表示素子を用いることが出来る。表示素子の一例としては、EL(エレクトロルミネッセンス)素子(有機EL素子、無機EL素子、または、有機物および無機物を含むEL素子)、LED(白色LED、赤色LED、緑色LED、青色LEDなど)、トランジスタ(電流に応じて発光するトランジスタ)、電子放出素子、液晶素子、電子インク、電気泳動素子、GLV(グレーティングライトバルブ)、MEMS(マイクロ・エレクトロ・メカニカル・システム)を用いた表示素子、DMD(デジタルマイクロミラーデバイス)、DMS(デジタル・マイクロ・シャッター)、MIRASOL(登録商標)、IMOD(インターフェロメトリック・モジュレーション)素子、シャッター方式のMEMS表示素子、光干渉方式のMEMS表示素子、エレクトロウェッティング素子、圧電セラミックディスプレイ、カーボンナノチューブを用いた表示素子、など、電気的または磁気的作用により、コントラスト、輝度、反射率、透過率などが変化する表示媒体を有するものがある。また、表示素子として量子ドットを用いてもよい。
[発光表示装置用画素回路の一例]
図7(A)に示す画素回路534は、トランジスタ461と、容量素子463と、トランジスタ468と、トランジスタ464と、を有する。また、図7(B)に示す画素回路534は、表示素子462として機能できる発光素子と電気的に接続されている。
図7(B)に示す画素回路534は、トランジスタ461と、容量素子463と、を有する。また、図7(B)に示す画素回路534は、表示素子462として機能できる液晶素子が電気的に接続されている。
本実施の形態では、上記実施の形態に示した表示装置110などに用いることができるトランジスタの一例について、図面を用いて説明する。
図8(A1)は、ボトムゲート型のトランジスタの一種であるチャネル保護型のトランジスタ310の断面図である。図8(A1)において、トランジスタ310は基板371上に形成されている。また、トランジスタ310は、基板371上に絶縁層372を介して電極322を有する。また、電極322上に絶縁層326を介して半導体層324を有する。電極322はゲート電極として機能できる。絶縁層326はゲート絶縁層として機能できる。
図9(A1)に、トップゲート型のトランジスタの一種であるトランジスタ330の断面図を示す。トランジスタ330は、絶縁層372の上に半導体層324を有し、半導体層324および絶縁層372上に、半導体層324の一部に接する電極344a、および半導体層324の一部に接する電極344bを有し、半導体層324、電極344a、および電極344b上に絶縁層326を有し、絶縁層326上に電極322を有する。
基板に用いる材料に大きな制限はない。目的に応じて、透光性の有無や加熱処理に耐えうる程度の耐熱性などを勘案して決定すればよい。例えばバリウムホウケイ酸ガラスやアルミノホウケイ酸ガラスなどのガラス基板、セラミック基板、石英基板、サファイア基板などを用いることができる。また、半導体基板、可撓性基板(フレキシブル基板)、貼り合わせフィルム、基材フィルムなどを用いてもよい。
トランジスタのゲート、ソースおよびドレインのほか、表示装置を構成する各種配線および電極などの導電層に用いることのできる導電性材料としては、アルミニウム(Al)、クロム(Cr)、銅(Cu)、銀(Ag)、金(Au)、白金(Pt)、タンタル(Ta)、ニッケル(Ni)、チタン(Ti)、モリブデン(Mo)、タングステン(W)、ハフニウム(Hf)、バナジウム(V)、ニオブ(Nb)、マンガン(Mn)、マグネシウム(Mg)、ジルコニウム(Zr)、ベリリウム(Be)等から選ばれた金属元素、上述した金属元素を成分とする合金、または上述した金属元素を組み合わせた合金などを用いることができる。また、リン等の不純物元素を含有させた多結晶シリコンに代表される半導体、ニッケルシリサイドなどのシリサイドを用いてもよい。導電性材料の形成方法は特に限定されず、蒸着法、CVD法、スパッタリング法、スピンコート法などの各種形成方法を用いることができる。
各絶縁層は、窒化アルミニウム、酸化アルミニウム、窒化酸化アルミニウム、酸化窒化アルミニウム、酸化マグネシウム、窒化シリコン、酸化シリコン、窒化酸化シリコン、酸化窒化シリコン、酸化ガリウム、酸化ゲルマニウム、酸化イットリウム、酸化ジルコニウム、酸化ランタン、酸化ネオジム、酸化ハフニウム、酸化タンタル、アルミニウムシリケートなどから選ばれた材料を、単層でまたは積層して用いる。また、酸化物材料、窒化物材料、酸化窒化物材料、窒化酸化物材料のうち、複数の材料を混合した材料を用いてもよい。
トランジスタの半導体層に用いる半導体材料としては、非晶質半導体、結晶性を有する半導体(微結晶半導体、多結晶半導体、単結晶半導体、または一部に結晶領域を有する半導体)のいずれを用いてもよい。
絶縁層、半導体層、電極や配線を形成するための導電層などは、スパッタリング法、化学気相堆積(CVD:Chemical Vapor Deposition)法、真空蒸着法、パルスレーザ堆積(PLD:Pulse Laser Deposition)法、原子層成膜(ALD:Atomic Layer Deposition)法などを用いて形成することができる。CVD法としては、プラズマ化学気相堆積(PECVD)法や、熱CVD法でもよい。熱CVD法の例として、有機金属化学気相堆積(MOCVD:Metal Organic CVD)法を用いてもよい。
本実施の形態では、トランジスタの半導体層に用いることができる金属酸化物について説明する。
本項では、本発明の一態様で開示されるトランジスタなどの半導体装置に用いることができる金属酸化物の一態様である、CAC−OS(Cloud−Aligned Composite−Oxide Semiconductor)、またはCAC(Cloud−Aligned Composite)−metal oxideの構成について説明する。
本項では、本発明の一態様で開示されるトランジスタなどの半導体装置に用いることができる金属酸化物の構造について説明する。
本実施の形態では、上記実施の形態に示した表示装置等に用いることができるトランジスタの一例について、図面を用いて説明する。特に、OSトランジスタに用いることが好ましいトランジスタ構造の一例について説明する。
〔構成例1〕
まず、トランジスタの構造の一例として、トランジスタ500aについて、図11(A)(B)、(C)を用いて説明する。図11(A)はトランジスタ500aの上面図である。図11(B)は、図11(A)に示す一点鎖線X1−X2間における切断面の断面図に相当し、図11(C)は、図11(A)に示す一点鎖線Y1−Y2間における切断面の断面図に相当する。なお、図面をわかり易くするため、図11(A)ではトランジスタ500aの構成要素の一部(ゲート絶縁層としての機能を有する絶縁層等)を省略して図示している。なお、以下において、一点鎖線X1−X2方向をチャネル長方向、一点鎖線Y1−Y2方向をチャネル幅方向と呼称する場合がある。なお、トランジスタの上面図においては、以降の図面においても図11(A)と同様に、構成要素の一部を省略して図示する場合がある。
次に、トランジスタの構造の一例として、トランジスタ500bについて、図12(A)、(B)、(C)を用いて説明する。図12(A)はトランジスタ500bの上面図である。図12(B)は、図12(A)に示す一点鎖線X1−X2間における切断面の断面図に相当し、図12(C)は、図12(A)に示す一点鎖線Y1−Y2間における切断面の断面図に相当する。
次に、トランジスタの構造の一例として、トランジスタ500cについて、図13(A)、(B)、(C)を用いて説明する。図13(A)はトランジスタ500cの上面図である。図13(B)は、図13(A)に示す一点鎖線X1−X2間における切断面の断面図に相当し、図13(C)は、図13(A)に示す一点鎖線Y1−Y2間における切断面の断面図に相当する。
次に、トランジスタの構造の一例として、トランジスタ500dおよびトランジスタ500eについて、図14(A)、(B)、(C)、(D)を用いて説明する。
次に、トランジスタの構造の一例として、トランジスタ500fについて、図15(A)、(B)、(C)を用いて説明する。図15(A)はトランジスタ500fの上面図である。図15(B)は、図15(A)に示す一点鎖線X1−X2間における切断面の断面図に相当し、図15(C)は、図15(A)に示す一点鎖線Y1−Y2間における切断面の断面図に相当する。
本実施の形態では、液晶素子を用いた表示装置の構成例と、EL素子を用いた表示装置の構成例について説明する。図16(A)において、第1の基板4001上に設けられた表示部113を囲むようにして、シール材4005が設けられ、表示部113がシール材4005および第2の基板4006によって封止されている。
本実施の形態では、本発明の一態様の表示システムを適用可能な電子機器について、図18乃至図19を用いて説明する。
102 マスタコントローラ
103 データ処理回路
104 フレームメモリ
106 タイミングコントローラ
107 レジスタチェーン
108 設定レジスタ
109 タッチセンサコントローラ
110 表示装置
111 データドライバ
112 ゲートドライバ
113 表示部
114 画素
115 画素
116 配線
117 配線
120 プロセッサ
121 データ処理回路
122 レジスタ値生成回路
123 プロセッサコントローラ
130 DRAM
131 DRAMコントローラ
140 タッチセンサ
150 光センサ
160 クロック生成回路
220 ラッチ
221 ラッチ群
222 ラッチ群
223 ラッチ群
224 ラッチ群
227 絶縁層
229 設定レジスタ
230 セレクタ
240 コンテキスト生成回路
241 内部コンテキスト生成回路
Claims (6)
- 表示装置と、ディスプレイコントローラと、を含み、
前記表示装置は、表示部を有し、
前記表示部は、
m行n列(mおよびnは、それぞれ2以上の整数)に配置された複数の画素と、
m行の走査線と、n列のビデオ信号線と、を含み、
前記ディスプレイコントローラは、
設定レジスタと、マスタコントローラと、データ処理回路と、を含み、
前記設定レジスタは、複数の設定パラメータを保持する機能を有し、
前記マスタコントローラは、
前記走査線の行番号に応じて、前記複数の設定パラメータの一が前記データ処理回路に入力されるように制御する機能を有し、
前記データ処理回路は、
入力された前記設定パラメータに基づいて、第1の画像データを第2の画像データに加工する機能を有し、
前記ディスプレイコントローラは、
前記第2の画像データを前記表示装置に供給する機能を有する
ことを特徴とする表示システム。 - 請求項1において、
j列目(jは1以上n以下の整数)の前記ビデオ信号線は、
前記複数の画素のうち、
第1の色を制御する前記画素と、
第2の色を制御する前記画素と、
に電気的に接続されていることを特徴とする表示システム。 - 請求項1または請求項2において、
前記複数の画素は、それぞれ、表示素子と、トランジスタと、を有することを特徴とする表示システム。 - 請求項3において、
前記表示素子は、液晶素子またはEL素子であることを特徴とする表示システム。 - 請求項3または請求項4において、
前記トランジスタは、チャネルが形成される半導体層がシリコンまたは金属酸化物を含むことを特徴とする表示システム。 - 請求項1乃至請求項5のいずれか一項において、
前記表示装置は、8K解像度以上の解像度を有することを特徴とする表示システム。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020213043A1 (ja) * | 2019-04-15 | 2020-10-22 | シャープ株式会社 | 表示装置 |
WO2020213042A1 (ja) * | 2019-04-15 | 2020-10-22 | シャープ株式会社 | 表示装置 |
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CN109935600B (zh) * | 2019-03-29 | 2021-03-30 | 京东方科技集团股份有限公司 | 一种Micro LED阵列结构、显示面板和显示装置 |
KR20210081677A (ko) * | 2019-12-24 | 2021-07-02 | 엘지디스플레이 주식회사 | 디스플레이 장치 및 디스플레이 장치의 보상 방법 |
US11342481B2 (en) | 2020-05-26 | 2022-05-24 | Applied Materials, Inc. | Preclean and encapsulation of microLED features |
CN115331587B (zh) * | 2022-10-14 | 2022-12-20 | 南京达斯琪数字科技有限公司 | 一种减少重叠阴影的旋转显示方法及系统 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06230760A (ja) * | 1993-02-04 | 1994-08-19 | Hitachi Ltd | 表示装置 |
JP2003280615A (ja) * | 2002-01-16 | 2003-10-02 | Sharp Corp | 階調表示基準電圧発生回路およびそれを用いた液晶表示装置 |
JP2006317566A (ja) * | 2005-05-11 | 2006-11-24 | Sanyo Epson Imaging Devices Corp | 表示装置および電子機器 |
US20080094335A1 (en) * | 2006-10-23 | 2008-04-24 | Samsung Electronics Co., Ltd., | Liquid crystal display and method of driving the same |
US20090278866A1 (en) * | 2008-05-08 | 2009-11-12 | Kim Jong-Soo | Gamma corrected display device |
-
2018
- 2018-02-28 WO PCT/IB2018/051250 patent/WO2018163019A1/en active Application Filing
- 2018-03-02 TW TW107107128A patent/TW201839746A/zh unknown
- 2018-03-09 JP JP2018042636A patent/JP2018151630A/ja not_active Withdrawn
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06230760A (ja) * | 1993-02-04 | 1994-08-19 | Hitachi Ltd | 表示装置 |
JP2003280615A (ja) * | 2002-01-16 | 2003-10-02 | Sharp Corp | 階調表示基準電圧発生回路およびそれを用いた液晶表示装置 |
JP2006317566A (ja) * | 2005-05-11 | 2006-11-24 | Sanyo Epson Imaging Devices Corp | 表示装置および電子機器 |
US20080094335A1 (en) * | 2006-10-23 | 2008-04-24 | Samsung Electronics Co., Ltd., | Liquid crystal display and method of driving the same |
US20090278866A1 (en) * | 2008-05-08 | 2009-11-12 | Kim Jong-Soo | Gamma corrected display device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020213043A1 (ja) * | 2019-04-15 | 2020-10-22 | シャープ株式会社 | 表示装置 |
WO2020213042A1 (ja) * | 2019-04-15 | 2020-10-22 | シャープ株式会社 | 表示装置 |
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