JP6904517B2 - 結晶性酸化物半導体膜およびその製造方法 - Google Patents

結晶性酸化物半導体膜およびその製造方法 Download PDF

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JP6904517B2
JP6904517B2 JP2016131157A JP2016131157A JP6904517B2 JP 6904517 B2 JP6904517 B2 JP 6904517B2 JP 2016131157 A JP2016131157 A JP 2016131157A JP 2016131157 A JP2016131157 A JP 2016131157A JP 6904517 B2 JP6904517 B2 JP 6904517B2
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layer
crystalline oxide
oxide semiconductor
semiconductor film
main component
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JP2018002544A5 (enExample
JP2018002544A (ja
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真也 織田
真也 織田
梨絵 徳田
梨絵 徳田
俊実 人羅
俊実 人羅
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Flosfia Inc
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  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2016131157A 2016-06-30 2016-06-30 結晶性酸化物半導体膜およびその製造方法 Active JP6904517B2 (ja)

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JP2018002544A JP2018002544A (ja) 2018-01-11
JP2018002544A5 JP2018002544A5 (enExample) 2019-08-08
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Families Citing this family (15)

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Publication number Priority date Publication date Assignee Title
CN112424947A (zh) 2018-07-12 2021-02-26 株式会社Flosfia 半导体装置及包含半导体装置的半导体系统
JP6761920B2 (ja) * 2018-08-01 2020-09-30 出光興産株式会社 化合物
JP7612144B2 (ja) * 2019-05-23 2025-01-14 株式会社Flosfia 半導体装置
WO2020261355A1 (ja) * 2019-06-25 2020-12-30 日本碍子株式会社 半導体膜
CN114342044A (zh) * 2019-07-12 2022-04-12 株式会社Flosfia 氧化物膜及半导体装置
JPWO2021010237A1 (enExample) * 2019-07-12 2021-01-21
JP7306640B2 (ja) * 2019-08-28 2023-07-11 信越化学工業株式会社 結晶性酸化物膜
WO2021065940A1 (ja) * 2019-09-30 2021-04-08 株式会社Flosfia 積層構造体および半導体装置
JPWO2021066156A1 (enExample) * 2019-10-04 2021-04-08
JP7510123B2 (ja) * 2020-01-27 2024-07-03 株式会社Flosfia 半導体装置
CN115023816A (zh) 2020-01-27 2022-09-06 株式会社Flosfia 半导体装置和半导体装置的制造方法
JP2023085571A (ja) * 2020-03-17 2023-06-21 日本碍子株式会社 半導体膜
FR3109470B1 (fr) 2020-04-15 2022-04-01 Commissariat Energie Atomique Diode electroluminescente comprenant une structure hybride formee de couches et de nanofils
CN116157550B (zh) * 2020-08-06 2025-09-09 信越化学工业株式会社 半导体层叠体、半导体元件及半导体元件的制造方法
JP7708349B2 (ja) * 2020-12-24 2025-07-15 株式会社Flosfia 半導体素子および半導体装置

Family Cites Families (3)

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Publication number Priority date Publication date Assignee Title
JP5343224B1 (ja) * 2012-09-28 2013-11-13 Ｒｏｃａ株式会社 半導体装置および結晶
JP6013410B2 (ja) * 2014-08-07 2016-10-25 株式会社タムラ製作所 Ｇａ２Ｏ３系単結晶基板
JP2016100593A (ja) * 2014-11-26 2016-05-30 株式会社Flosfia 結晶性積層構造体

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