JP6896912B2 - バッチ式基板処理装置 - Google Patents
バッチ式基板処理装置 Download PDFInfo
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- JP6896912B2 JP6896912B2 JP2020075191A JP2020075191A JP6896912B2 JP 6896912 B2 JP6896912 B2 JP 6896912B2 JP 2020075191 A JP2020075191 A JP 2020075191A JP 2020075191 A JP2020075191 A JP 2020075191A JP 6896912 B2 JP6896912 B2 JP 6896912B2
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- 239000000758 substrate Substances 0.000 title claims description 94
- 238000000034 method Methods 0.000 claims description 55
- 238000005192 partition Methods 0.000 claims description 50
- 230000001681 protective effect Effects 0.000 claims description 24
- 230000002093 peripheral effect Effects 0.000 claims description 13
- 239000007789 gas Substances 0.000 description 84
- 210000002381 plasma Anatomy 0.000 description 77
- 238000006243 chemical reaction Methods 0.000 description 18
- 238000002347 injection Methods 0.000 description 15
- 239000007924 injection Substances 0.000 description 15
- 239000002245 particle Substances 0.000 description 11
- 238000000354 decomposition reaction Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 6
- 239000012495 reaction gas Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000010909 process residue Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003779 heat-resistant material Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Description
110:チューブ
115:凹部
120:噴射口
130:プラズマ反応部
131:第1の電極
132:第2の電極
133:第3の電極
135:隔壁
140:基板支持部
150:排気部
151:排気部材
152:排気ライン
153:排気口
160:ガス供給管
161:供給口
170:保護管
172:保護カバー
180:可変電源供給部
181:可変キャパシタ(RFスプリッタ)
182:RF電源
190:ソースガス供給管
Claims (10)
- 複数枚の基板が収容される処理空間を与えるチューブと、
前記チューブの長手方向に延び、前記チューブの内部に配置されて前記処理空間と画成され、プラズマが形成される放電空間を与える隔壁と、
前記複数枚の基板が処理される工程に必要とされる工程ガスを前記放電空間に供給するガス供給管と、
前記チューブの長手方向に沿って延び、前記放電空間にプラズマを形成するために前記チューブの外部に配置される複数の電極と、
を備え、
前記チューブは、前記チューブの長手方向に延び、前記チューブの最外周面から前記チューブの内部に向かって凹んだ複数の凹部を有し、前記複数の電極は、前記複数の凹部にそれぞれ収容され、
前記複数の凹部同士の間隔は、互いに等しいバッチ式基板処理装置。 - 前記複数の凹部は、前記チューブの周方向に沿って互いに離間して配置される請求項1に記載のバッチ式基板処理装置。
- 前記チューブの周方向における前記複数の凹部の開かれた入口の幅は、前記複数の凹部の内部空間の最大の幅よりも小さい請求項1に記載のバッチ式基板処理装置。
- 前記チューブの最外周面を基準としたとき、前記複数の凹部のうちの少なくともいずれか一つの深さが残りの深さとは異なる請求項1に記載のバッチ式基板処理装置。
- 前記複数の電極は、RF電力が印加される複数のパワー電極及び接地される接地電極を備え、
前記複数の凹部のうち、前記接地電極が収容される真ん中に位置する凹部の深さが残りの凹部の深さよりもさらに深い請求項4に記載のバッチ式基板処理装置。 - 前記複数の電極は、前記複数の凹部の内側面に接触し、
前記複数の電極及び前記チューブの一部の外壁を覆う保護カバーをさらに備える請求項1に記載のバッチ式基板処理装置。 - 前記ガス供給管は、前記チューブの周方向に沿って前記隔壁の外側に配置される請求項1に記載のバッチ式基板処理装置。
- 前記隔壁は、前記複数の凹部のうち外側に位置する凹部から延びる請求項1に記載のバッチ式基板処理装置。
- 前記ガス供給管は、前記チューブの外部から前記複数の電極の間の空間へと前記工程ガスを供給する請求項8に記載のバッチ式基板処理装置。
- 前記複数の電極の一部に1kHz〜10kHzのパルス周波数のパルス状にRF電力を印加して、前記プラズマを周期的にオン/オフにするRF電源をさらに備える請求項1に記載のバッチ式基板処理装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020190051754A KR102139296B1 (ko) | 2019-05-02 | 2019-05-02 | 배치식 기판처리장치 |
KR10-2019-0051754 | 2019-05-02 |
Publications (2)
Publication Number | Publication Date |
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JP2020184526A JP2020184526A (ja) | 2020-11-12 |
JP6896912B2 true JP6896912B2 (ja) | 2021-06-30 |
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Application Number | Title | Priority Date | Filing Date |
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JP2020075191A Active JP6896912B2 (ja) | 2019-05-02 | 2020-04-21 | バッチ式基板処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11495442B2 (ja) |
JP (1) | JP6896912B2 (ja) |
KR (1) | KR102139296B1 (ja) |
CN (1) | CN111883410B (ja) |
TW (1) | TWI750629B (ja) |
Families Citing this family (4)
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KR102354879B1 (ko) * | 2020-08-04 | 2022-02-07 | 주식회사 유진테크 | 배치식 기판처리장치 |
KR102622739B1 (ko) * | 2022-02-10 | 2024-01-09 | 주식회사 유진테크 | 배치식 기판처리장치 |
KR102640939B1 (ko) * | 2022-03-04 | 2024-02-27 | 주식회사 유진테크 | 배치식 기판처리장치 |
KR102673030B1 (ko) * | 2022-06-14 | 2024-06-05 | 한화정밀기계 주식회사 | 회전하는 가스 터렛을 갖는 박막 증착 장치 |
Family Cites Families (22)
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JPS63137419A (ja) * | 1986-11-29 | 1988-06-09 | Furendotetsuku Kenkyusho:Kk | 半導体製造装置 |
JP3165928B2 (ja) * | 1992-02-24 | 2001-05-14 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP4384645B2 (ja) * | 2001-01-11 | 2009-12-16 | 株式会社日立国際電気 | 処理管 |
JP3979849B2 (ja) | 2001-01-11 | 2007-09-19 | 株式会社日立国際電気 | プラズマ処理装置および半導体装置の製造方法 |
US20030164143A1 (en) * | 2002-01-10 | 2003-09-04 | Hitachi Kokusai Electric Inc. | Batch-type remote plasma processing apparatus |
JP4873820B2 (ja) | 2002-04-01 | 2012-02-08 | 株式会社エフティーエル | 半導体装置の製造装置 |
JP4020306B2 (ja) | 2002-10-07 | 2007-12-12 | 株式会社日立国際電気 | 基板処埋装置 |
JP2008300444A (ja) * | 2007-05-29 | 2008-12-11 | Hitachi Kokusai Electric Inc | 半導体製造装置 |
JP2009200275A (ja) * | 2008-02-22 | 2009-09-03 | Hitachi Kokusai Electric Inc | 半導体製造装置 |
JP5099101B2 (ja) | 2009-01-23 | 2012-12-12 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP5490585B2 (ja) | 2009-05-29 | 2014-05-14 | 株式会社日立国際電気 | 基板処理装置、基板処理方法および半導体装置の製造方法 |
JP2011114230A (ja) * | 2009-11-27 | 2011-06-09 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2011135010A (ja) * | 2009-12-25 | 2011-07-07 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP5718031B2 (ja) | 2010-11-26 | 2015-05-13 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
KR101396602B1 (ko) | 2013-02-26 | 2014-05-20 | 주식회사 테라세미콘 | 배치식 기판처리 장치 |
JP6113626B2 (ja) * | 2013-10-21 | 2017-04-12 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP6307984B2 (ja) * | 2014-03-31 | 2018-04-11 | 東京エレクトロン株式会社 | 基板処理装置 |
JP6515665B2 (ja) | 2015-05-07 | 2019-05-22 | 東京エレクトロン株式会社 | 基板処理装置 |
WO2018016131A1 (ja) * | 2016-07-21 | 2018-01-25 | 株式会社日立国際電気 | プラズマ生成装置、基板処理装置及び半導体装置の製造方法 |
WO2019035223A1 (ja) | 2017-08-14 | 2019-02-21 | 株式会社Kokusai Electric | プラズマ生成装置、基板処理装置および半導体装置の製造方法 |
KR102009348B1 (ko) * | 2017-09-20 | 2019-08-09 | 주식회사 유진테크 | 배치식 플라즈마 기판처리장치 |
KR101931692B1 (ko) | 2017-10-11 | 2018-12-21 | 주식회사 유진테크 | 배치식 플라즈마 기판처리장치 |
-
2019
- 2019-05-02 KR KR1020190051754A patent/KR102139296B1/ko active IP Right Grant
-
2020
- 2020-04-07 US US16/842,755 patent/US11495442B2/en active Active
- 2020-04-09 TW TW109111952A patent/TWI750629B/zh active
- 2020-04-21 JP JP2020075191A patent/JP6896912B2/ja active Active
- 2020-04-29 CN CN202010357457.3A patent/CN111883410B/zh active Active
Also Published As
Publication number | Publication date |
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TWI750629B (zh) | 2021-12-21 |
JP2020184526A (ja) | 2020-11-12 |
US20200350143A1 (en) | 2020-11-05 |
US11495442B2 (en) | 2022-11-08 |
CN111883410A (zh) | 2020-11-03 |
KR102139296B1 (ko) | 2020-07-30 |
TW202107591A (zh) | 2021-02-16 |
CN111883410B (zh) | 2023-07-11 |
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