JP6893824B2 - 加工装置 - Google Patents
加工装置 Download PDFInfo
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- JP6893824B2 JP6893824B2 JP2017089054A JP2017089054A JP6893824B2 JP 6893824 B2 JP6893824 B2 JP 6893824B2 JP 2017089054 A JP2017089054 A JP 2017089054A JP 2017089054 A JP2017089054 A JP 2017089054A JP 6893824 B2 JP6893824 B2 JP 6893824B2
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- 230000001681 protective effect Effects 0.000 claims description 39
- 238000003384 imaging method Methods 0.000 claims description 14
- 238000003860 storage Methods 0.000 claims description 9
- 238000001514 detection method Methods 0.000 claims description 8
- 238000000227 grinding Methods 0.000 description 67
- 230000007246 mechanism Effects 0.000 description 18
- 238000000034 method Methods 0.000 description 16
- 230000008569 process Effects 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 12
- 238000004140 cleaning Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000005520 cutting process Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
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- 238000003892 spreading Methods 0.000 description 4
- 230000007480 spreading Effects 0.000 description 4
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- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000009966 trimming Methods 0.000 description 3
- 238000007514 turning Methods 0.000 description 3
- 239000006061 abrasive grain Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
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- 238000005516 engineering process Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
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- 239000007788 liquid Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
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- 239000012153 distilled water Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
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Images
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Description
41 チャックテーブル
56 粗研削手段(加工手段)
66 仕上げ研削手段(加工手段)
70 表裏検出手段
71 液滴滴下部
73 ノズル
75 撮像部
81 基準画像情報記憶部
82 判断部
85 被加工物の表面
86 被加工物の裏面
D 水滴
T 保護テープ
W 被加工物
Claims (2)
- 表面に保護テープが貼着された被加工物を保持するチャックテーブルと、該チャックテーブルに保持された被加工物の裏面を加工する加工手段と、を少なくとも含む加工装置であって、
被加工物が該チャックテーブルに載置される前に被加工物の表裏を検出する表裏検出手段が配設されており、
該表裏検出手段は、水平保持面に載置された被加工物に滴下された液滴の濡れ性と、保護テープに滴下された液滴の濡れ性との違いにより液滴を滴下した面が保護テープを貼着した表面か、加工する裏面かを検出すること、を特徴とする加工装置。 - 該表裏検出手段は、所定量の液滴を滴下する液滴滴下部と、該液滴滴下部から被加工物の上面に滴下された液滴を撮像する撮像部と、予め該表面及び/又は該裏面に該液滴滴下部から滴下した液滴を該撮像部で撮像し基準画像情報として記憶する基準画像情報記憶部と、
該基準画像情報と比較して液滴を滴下した面が表面又は裏面であると判断する判断部と、から構成される請求項1記載の加工装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2017089054A JP6893824B2 (ja) | 2017-04-28 | 2017-04-28 | 加工装置 |
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JP2017089054A JP6893824B2 (ja) | 2017-04-28 | 2017-04-28 | 加工装置 |
Publications (2)
Publication Number | Publication Date |
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JP2018187688A JP2018187688A (ja) | 2018-11-29 |
JP6893824B2 true JP6893824B2 (ja) | 2021-06-23 |
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JP2017089054A Active JP6893824B2 (ja) | 2017-04-28 | 2017-04-28 | 加工装置 |
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JP (1) | JP6893824B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019114684A (ja) * | 2017-12-25 | 2019-07-11 | 東京エレクトロン株式会社 | 基板処理システム、基板処理方法、プログラム及びコンピュータ記憶媒体 |
CN116351740B (zh) * | 2023-03-31 | 2023-11-07 | 广东荣旭智能技术有限公司 | 芯片检测设备及芯片检测方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09236532A (ja) * | 1996-02-28 | 1997-09-09 | Kao Corp | 基板表面性検査方法および検査装置 |
JP4272757B2 (ja) * | 1999-07-14 | 2009-06-03 | 株式会社ディスコ | 研削装置 |
JP4299111B2 (ja) * | 2003-11-18 | 2009-07-22 | 株式会社ディスコ | 研削装置 |
JP2006303051A (ja) * | 2005-04-19 | 2006-11-02 | Disco Abrasive Syst Ltd | ウエーハの研削方法および研削装置 |
JP5217122B2 (ja) * | 2006-07-11 | 2013-06-19 | 株式会社日立製作所 | パターン形成装置および有機薄膜トランジスタの製造方法ならびに有機薄膜トランジスタ |
JP2010010242A (ja) * | 2008-06-25 | 2010-01-14 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
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- 2017-04-28 JP JP2017089054A patent/JP6893824B2/ja active Active
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