JP6881214B2 - シリコン単結晶の製造方法 - Google Patents
シリコン単結晶の製造方法 Download PDFInfo
- Publication number
- JP6881214B2 JP6881214B2 JP2017200276A JP2017200276A JP6881214B2 JP 6881214 B2 JP6881214 B2 JP 6881214B2 JP 2017200276 A JP2017200276 A JP 2017200276A JP 2017200276 A JP2017200276 A JP 2017200276A JP 6881214 B2 JP6881214 B2 JP 6881214B2
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- JP
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- Prior art keywords
- exhaust port
- gas
- single crystal
- silicon single
- exhaust
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 229910052710 silicon Inorganic materials 0.000 title claims description 56
- 239000010703 silicon Substances 0.000 title claims description 56
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 55
- 239000013078 crystal Substances 0.000 title claims description 45
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000000034 method Methods 0.000 title claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 23
- 238000006073 displacement reaction Methods 0.000 claims description 22
- 229910052799 carbon Inorganic materials 0.000 claims description 18
- 239000010453 quartz Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 2
- 229960001716 benzalkonium Drugs 0.000 claims 1
- CYDRXTMLKJDRQH-UHFFFAOYSA-N benzododecinium Chemical compound CCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 CYDRXTMLKJDRQH-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 description 69
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 239000002994 raw material Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000008710 crystal-8 Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017200276A JP6881214B2 (ja) | 2017-10-16 | 2017-10-16 | シリコン単結晶の製造方法 |
| TW107125107A TWI682077B (zh) | 2017-10-16 | 2018-07-20 | 矽單結晶的製造方法 |
| KR1020180121041A KR102151821B1 (ko) | 2017-10-16 | 2018-10-11 | 실리콘 단결정 제조 방법 |
| CN201811203581.3A CN109666968B (zh) | 2017-10-16 | 2018-10-16 | 硅单晶的制造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017200276A JP6881214B2 (ja) | 2017-10-16 | 2017-10-16 | シリコン単結晶の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2019073412A JP2019073412A (ja) | 2019-05-16 |
| JP6881214B2 true JP6881214B2 (ja) | 2021-06-02 |
Family
ID=66142054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017200276A Active JP6881214B2 (ja) | 2017-10-16 | 2017-10-16 | シリコン単結晶の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6881214B2 (ko) |
| KR (1) | KR102151821B1 (ko) |
| CN (1) | CN109666968B (ko) |
| TW (1) | TWI682077B (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021046344A (ja) * | 2019-09-20 | 2021-03-25 | 株式会社Sumco | 半導体結晶製造装置 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05319976A (ja) | 1992-03-19 | 1993-12-03 | Fujitsu Ltd | 超低炭素結晶成長装置及びシリコン単結晶の製造方法 |
| JP4128842B2 (ja) * | 2002-10-15 | 2008-07-30 | コバレントマテリアル株式会社 | シリコン単結晶引上装置 |
| JP4730937B2 (ja) * | 2004-12-13 | 2011-07-20 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | 半導体単結晶製造装置および製造方法 |
| CN101713095A (zh) * | 2009-08-18 | 2010-05-26 | 芜湖升阳光电科技有限公司 | 双向气流的硅晶体生长装置 |
| CN201793813U (zh) * | 2010-09-28 | 2011-04-13 | 常州天合光能有限公司 | 低能耗单晶热场 |
| KR101111681B1 (ko) * | 2010-10-05 | 2012-02-14 | (주)기술과가치 | 단결정 실리콘 잉곳 제조장치 |
| JP5561785B2 (ja) * | 2011-03-25 | 2014-07-30 | グローバルウェーハズ・ジャパン株式会社 | シリコン単結晶引上装置及びそれを用いたシリコン単結晶の引上げ方法 |
| CN103173849A (zh) * | 2011-12-21 | 2013-06-26 | 卉欣光电科技（江苏）有限公司 | 单晶硅制造装置炉室结构 |
| JP6268936B2 (ja) * | 2013-11-05 | 2018-01-31 | 株式会社Sumco | シリコン単結晶製造方法 |
| JP6413925B2 (ja) * | 2015-05-20 | 2018-10-31 | 株式会社デンソー | 炭化珪素単結晶製造装置 |
| CN204849115U (zh) * | 2015-08-07 | 2015-12-09 | 包头市山晟新能源有限责任公司 | 上排气热场单晶炉 |
-
2017
- 2017-10-16 JP JP2017200276A patent/JP6881214B2/ja active Active
-
2018
- 2018-07-20 TW TW107125107A patent/TWI682077B/zh active
- 2018-10-11 KR KR1020180121041A patent/KR102151821B1/ko active IP Right Grant
- 2018-10-16 CN CN201811203581.3A patent/CN109666968B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR102151821B1 (ko) | 2020-09-03 |
| CN109666968B (zh) | 2021-02-09 |
| JP2019073412A (ja) | 2019-05-16 |
| TWI682077B (zh) | 2020-01-11 |
| CN109666968A (zh) | 2019-04-23 |
| TW201917237A (zh) | 2019-05-01 |
| KR20190042457A (ko) | 2019-04-24 |
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