JP6870623B2 - キャリアの製造方法及びウェーハの両面研磨方法 - Google Patents

キャリアの製造方法及びウェーハの両面研磨方法 Download PDF

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Publication number
JP6870623B2
JP6870623B2 JP2018006654A JP2018006654A JP6870623B2 JP 6870623 B2 JP6870623 B2 JP 6870623B2 JP 2018006654 A JP2018006654 A JP 2018006654A JP 2018006654 A JP2018006654 A JP 2018006654A JP 6870623 B2 JP6870623 B2 JP 6870623B2
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Japan
Prior art keywords
carrier
wafer
raw material
polishing
plate material
Prior art date
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Active
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JP2018006654A
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English (en)
Japanese (ja)
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JP2019123059A (ja
Inventor
上野　淳一
淳一 上野
大地 北爪
大地 北爪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP2018006654A priority Critical patent/JP6870623B2/ja
Priority to TW107147300A priority patent/TWI804554B/zh
Priority to KR1020190004571A priority patent/KR102657849B1/ko
Priority to CN201910035973.1A priority patent/CN110052955B/zh
Publication of JP2019123059A publication Critical patent/JP2019123059A/ja
Application granted granted Critical
Publication of JP6870623B2 publication Critical patent/JP6870623B2/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
    • B23P9/00—Treating or finishing surfaces mechanically, with or without calibrating, primarily to resist wear or impact, e.g. smoothing or roughening turbine blades or bearings; Features of such surfaces not otherwise provided for, their treatment being unspecified
    • B23P9/02—Treating or finishing by applying pressure, e.g. knurling
    • B23P9/025—Treating or finishing by applying pressure, e.g. knurling to inner walls of holes by using axially moving tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/28—Work carriers for double side lapping of plane surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Laser Beam Processing (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
JP2018006654A 2018-01-18 2018-01-18 キャリアの製造方法及びウェーハの両面研磨方法 Active JP6870623B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018006654A JP6870623B2 (ja) 2018-01-18 2018-01-18 キャリアの製造方法及びウェーハの両面研磨方法
TW107147300A TWI804554B (zh) 2018-01-18 2018-12-27 載體的製造方法及晶圓的雙面研磨方法
KR1020190004571A KR102657849B1 (ko) 2018-01-18 2019-01-14 캐리어의 제조방법 및 웨이퍼의 양면 연마방법
CN201910035973.1A CN110052955B (zh) 2018-01-18 2019-01-15 载体的制造方法及晶圆的双面研磨方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018006654A JP6870623B2 (ja) 2018-01-18 2018-01-18 キャリアの製造方法及びウェーハの両面研磨方法

Publications (2)

Publication Number Publication Date
JP2019123059A JP2019123059A (ja) 2019-07-25
JP6870623B2 true JP6870623B2 (ja) 2021-05-12

Family

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JP2018006654A Active JP6870623B2 (ja) 2018-01-18 2018-01-18 キャリアの製造方法及びウェーハの両面研磨方法

Country Status (4)

Country Link
JP (1) JP6870623B2 (zh)
KR (1) KR102657849B1 (zh)
CN (1) CN110052955B (zh)
TW (1) TWI804554B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7506394B2 (ja) 2020-04-13 2024-06-26 相模ピーシーアイ株式会社 積層体仮キャリアの製造方法
CN111745535B (zh) * 2020-07-07 2022-09-02 郑州宇光复合材料有限公司 一种手机玻璃研磨用耐磨护圈
CN116175397A (zh) * 2022-12-13 2023-05-30 西安奕斯伟材料科技有限公司 一种用于研磨硅片的设备和方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19905737C2 (de) * 1999-02-11 2000-12-14 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe mit verbesserter Ebenheit
JP2000271858A (ja) * 1999-03-24 2000-10-03 Sanko Spring Kk ラッピング用キャリヤ
DE10023002B4 (de) * 2000-05-11 2006-10-26 Siltronic Ag Satz von Läuferscheiben sowie dessen Verwendung
WO2002011947A2 (en) * 2000-08-07 2002-02-14 Memc Electronic Materials, Inc. Method for processing a semiconductor wafer using double-side polishing
KR100550491B1 (ko) * 2003-05-06 2006-02-09 스미토모덴키고교가부시키가이샤 질화물 반도체 기판 및 질화물 반도체 기판의 가공 방법
JP5254706B2 (ja) * 2008-08-28 2013-08-07 株式会社岡本工作機械製作所 軸受研削用治具
JP5233888B2 (ja) 2009-07-21 2013-07-10 信越半導体株式会社 両面研磨装置用キャリアの製造方法、両面研磨装置用キャリア及びウェーハの両面研磨方法
JP5630414B2 (ja) * 2011-10-04 2014-11-26 信越半導体株式会社 ウェーハの加工方法
JP2013235898A (ja) * 2012-05-07 2013-11-21 Shirasaki Seisakusho:Kk 両面研磨装置用キャリアの製造方法及びこれを用いた両面研磨装置並びに両面研磨方法
JP5847789B2 (ja) * 2013-02-13 2016-01-27 信越半導体株式会社 両面研磨装置用キャリアの製造方法およびウエーハの両面研磨方法
JP6470976B2 (ja) * 2015-01-19 2019-02-13 Ｋｂセーレン株式会社 被研磨物保持材
JP6443370B2 (ja) * 2016-03-18 2018-12-26 信越半導体株式会社 両面研磨装置用のキャリアの製造方法およびウェーハの両面研磨方法

Also Published As

Publication number Publication date
TWI804554B (zh) 2023-06-11
CN110052955B (zh) 2022-08-12
JP2019123059A (ja) 2019-07-25
TW201933463A (zh) 2019-08-16
KR20190088414A (ko) 2019-07-26
CN110052955A (zh) 2019-07-26
KR102657849B1 (ko) 2024-04-17

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