JP6869000B2 - 発光モジュール - Google Patents
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- JP6869000B2 JP6869000B2 JP2016205875A JP2016205875A JP6869000B2 JP 6869000 B2 JP6869000 B2 JP 6869000B2 JP 2016205875 A JP2016205875 A JP 2016205875A JP 2016205875 A JP2016205875 A JP 2016205875A JP 6869000 B2 JP6869000 B2 JP 6869000B2
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- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Fastening Of Light Sources Or Lamp Holders (AREA)
Description
10、11、12 実装基板
20 回路基板
24A 第1端子電極
24B 第2端子電極
25A、25C 第1外側電極
25B、25D 第2外側電極
26A、26C、26E、26G、26I、26K 第1内側電極
26B、26D、26F、26H、26J、26L 第2内側電極
27A 第1接続電極
27B 第2接続電極
30 LED素子
31 ボンディングワイヤ
40、40’ 反射枠
50、50’ 封止樹脂
Claims (11)
- 基板と、
前記基板上に配置された第1電極および第2電極と、
前記第1電極と前記第2電極の間に接続された複数のLED素子と、
前記複数のLED素子を取り囲むように前記基板上に配置されたダム材と、
前記ダム材により囲まれた前記基板上の領域に充填されて前記複数のLED素子を封止する蛍光体含有樹脂と、を有し、
前記第1電極は、前記ダム材の下に配置された第1外側電極および前記第1外側電極よりも前記基板の中央側に配置された第1内側電極を有し、
前記第2電極は、前記ダム材の下に配置された第2外側電極および前記第2外側電極よりも前記基板の中央側に配置された第2内側電極を有し、
前記第1外側電極は前記第2内側電極と対向して配置され、前記第2外側電極は前記第1内側電極と対向して配置され、
前記第1外側電極と前記第2内側電極との間の距離、及び前記第2外側電極と前記第1内側電極との間の距離の間の距離は、均一であり、
前記第1外側電極と前記第2内側電極との間の距離は、前記第2外側電極と前記第1内側電極との間の距離の間の距離と等しい、
ことを特徴とする発光モジュール。 - 前記第1内側電極および前記第2内側電極は、前記ダム材により囲まれた前記基板上の実装領域の中央には配置されておらず、
前記複数のLED素子のうちの一部は、前記実装領域の中央を含む、前記第1内側電極と前記第2内側電極との間の中心領域に配置されている、請求項1に記載の発光モジュール。 - 前記複数のLED素子はM列のLED素子列を有し、各LED素子列は前記第1電極と前記第2電極の間に直列に接続したN個のLED素子を有し、MはNよりも大きい、請求項2に記載の発光モジュール。
- 前記中心領域に配置されたLED素子列は、前記第1内側電極と前記第2内側電極に接続され、
前記第1外側電極と前記第2内側電極との間および前記第2外側電極と前記第1内側電極との間の周辺領域に配置されたLED素子列は、前記第1外側電極と前記第2内側電極または前記第1内側電極と前記第2外側電極に接続されている、請求項3に記載の発光モジュール。 - 前記ダム材は円環状であり、
前記第1外側電極と前記第2外側電極は同じ円周上に円弧状に配置され、
前記第1内側電極と前記第2内側電極は前記第1外側電極及び前記第2外側電極とは異なる円周上に円弧状に配置され、
前記第1電極は、前記第1外側電極と前記第1内側電極とを接続する直線状の第1接続電極をさらに有し、
前記第2電極は、前記第2外側電極と前記第2内側電極とを接続する直線状の第2接続電極をさらに有する、請求項4に記載の発光モジュール。 - 前記第1内側電極および前記第2内側電極は、それぞれ同じ個数の複数の円弧状の電極で構成され、前記複数の円弧状の電極は同心円状に配置されている、請求項5に記載の発光モジュール。
- 前記第1電極と前記第2電極とは、前記基板の中心に対して点対称である、請求項5または6に記載の発光モジュール。
- 前記周辺領域における前記複数のLED素子は、前記基板の中心に対して放射状に配置されている、請求項5〜7のいずれか一項に記載の発光モジュール。
- 前記周辺領域における各LED素子列の同じ順番のLED素子は、同心円状に配置されている、請求項8に記載の発光モジュール。
- 前記基板及び前記LED素子は矩形の平面形状を有し、
前記複数のLED素子の実装位置および前記基板の辺に対する前記LED素子の角度である回転角の分布は、前記基板の中心に対して点対称である、請求項1〜9のいずれか一項に記載の発光モジュール。 - 前記基板は、実装基板と、前記実装基板上に配置された回路基板と、を有し、
前記第1電極および前記第2電極は前記回路基板上に配置され、
前記回路基板は開口部を有し、
前記複数のLED素子は、前記開口部内で露出した前記実装基板上の領域に実装されている、請求項1〜10のいずれか一項に記載の発光モジュール。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2015208903 | 2015-10-23 | ||
JP2015208903 | 2015-10-23 |
Publications (2)
Publication Number | Publication Date |
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JP2017085096A JP2017085096A (ja) | 2017-05-18 |
JP6869000B2 true JP6869000B2 (ja) | 2021-05-12 |
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JP2016205875A Active JP6869000B2 (ja) | 2015-10-23 | 2016-10-20 | 発光モジュール |
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US (2) | US9768151B2 (ja) |
JP (1) | JP6869000B2 (ja) |
DE (1) | DE102016220745A1 (ja) |
Families Citing this family (14)
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WO2015020205A1 (ja) * | 2013-08-09 | 2015-02-12 | 株式会社光波 | 発光装置 |
CN106605026A (zh) * | 2014-05-15 | 2017-04-26 | 布莱恩·艾伦·多布斯 | 道路轮廓标和安全系统 |
JP6869000B2 (ja) * | 2015-10-23 | 2021-05-12 | シチズン電子株式会社 | 発光モジュール |
JP2018206886A (ja) * | 2017-06-01 | 2018-12-27 | パナソニックIpマネジメント株式会社 | 発光装置、及び、照明装置 |
KR101936830B1 (ko) * | 2017-07-13 | 2019-01-10 | 은성라이팅 주식회사 | 조명기구 |
US11107857B2 (en) | 2017-08-18 | 2021-08-31 | Creeled, Inc. | Light emitting diodes, components and related methods |
US11101248B2 (en) * | 2017-08-18 | 2021-08-24 | Creeled, Inc. | Light emitting diodes, components and related methods |
CN109599411B (zh) * | 2018-12-07 | 2019-09-24 | 广东工业大学 | 一种用于Micro-LED巨量转移的可控分散及转移方法 |
JP7348501B2 (ja) * | 2019-09-30 | 2023-09-21 | 日亜化学工業株式会社 | 発光装置 |
KR102698236B1 (ko) * | 2019-12-16 | 2024-08-23 | 삼성디스플레이 주식회사 | 표시 장치 |
JP7494017B2 (ja) | 2020-06-02 | 2024-06-03 | シチズン電子株式会社 | 発光モジュール及び発光モジュールの製造方法 |
WO2022044762A1 (ja) * | 2020-08-26 | 2022-03-03 | デンカ株式会社 | 発光装置 |
JP2022038765A (ja) * | 2020-08-27 | 2022-03-10 | 三菱電機株式会社 | 光源モジュール及び照明装置 |
WO2024195399A1 (ja) * | 2023-03-23 | 2024-09-26 | シチズン電子株式会社 | 発光装置 |
Family Cites Families (14)
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JP4753904B2 (ja) * | 2007-03-15 | 2011-08-24 | シャープ株式会社 | 発光装置 |
JP5431818B2 (ja) * | 2009-07-21 | 2014-03-05 | シチズン電子株式会社 | 発光ダイオード光源装置 |
JP5623062B2 (ja) * | 2009-11-13 | 2014-11-12 | シャープ株式会社 | 発光装置およびその製造方法 |
JP5697091B2 (ja) * | 2011-04-01 | 2015-04-08 | シチズン電子株式会社 | 半導体発光装置 |
CN103548159B (zh) | 2011-05-27 | 2017-03-22 | 夏普株式会社 | 发光装置以及照明装置 |
JP6079629B2 (ja) * | 2011-07-25 | 2017-02-15 | 日亜化学工業株式会社 | 発光装置 |
JP5312711B1 (ja) * | 2011-12-20 | 2013-10-09 | シチズンホールディングス株式会社 | Ledモジュール |
JP2013153081A (ja) * | 2012-01-25 | 2013-08-08 | Sharp Corp | 発光装置、照明器具、および発光装置の製造方法 |
JP5776599B2 (ja) * | 2012-03-26 | 2015-09-09 | 東芝ライテック株式会社 | 発光モジュール及び照明装置 |
JP6072472B2 (ja) * | 2012-08-27 | 2017-02-01 | シチズン電子株式会社 | Led発光装置 |
JP5857928B2 (ja) * | 2012-09-25 | 2016-02-10 | 豊田合成株式会社 | 発光装置 |
CN103887402B (zh) * | 2012-12-21 | 2018-02-09 | 光宝电子(广州)有限公司 | 发光二极管封装结构、其围墙结构及围墙结构的制造方法 |
US9504207B2 (en) * | 2012-12-28 | 2016-11-29 | Sharp Kabushiki Kaisha | Light emitting device |
JP6869000B2 (ja) * | 2015-10-23 | 2021-05-12 | シチズン電子株式会社 | 発光モジュール |
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2016
- 2016-10-20 JP JP2016205875A patent/JP6869000B2/ja active Active
- 2016-10-21 DE DE102016220745.8A patent/DE102016220745A1/de active Pending
- 2016-10-21 US US15/299,930 patent/US9768151B2/en active Active
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- 2017-08-02 US US15/666,772 patent/US10056358B2/en active Active
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US10056358B2 (en) | 2018-08-21 |
US20170194297A1 (en) | 2017-07-06 |
US9768151B2 (en) | 2017-09-19 |
JP2017085096A (ja) | 2017-05-18 |
US20170330869A1 (en) | 2017-11-16 |
DE102016220745A1 (de) | 2017-04-27 |
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