JP6868929B1 - 移載装置及びこれを用いた成膜装置 - Google Patents
移載装置及びこれを用いた成膜装置 Download PDFInfo
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- 230000015572 biosynthetic process Effects 0.000 title claims description 33
- 230000007246 mechanism Effects 0.000 claims abstract description 88
- 230000002093 peripheral effect Effects 0.000 claims abstract description 4
- 238000005192 partition Methods 0.000 claims description 22
- 238000004381 surface treatment Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 141
- 239000000758 substrate Substances 0.000 description 133
- 238000000034 method Methods 0.000 description 30
- 238000004544 sputter deposition Methods 0.000 description 10
- 230000001174 ascending effect Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000003638 chemical reducing agent Substances 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000001810 electrochemical catalytic reforming Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- -1 organosilane compound Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
- C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
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- H—ELECTRICITY
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- H01J37/32431—Constructional details of the reactor
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- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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Abstract
Description
11…成膜室
111…カルーセルドラム(所定機器)
112…スパッタ電極
113…スパッタ電極
114…排気装置
115…ガス供給装置
116…ドラム軸
117…サーボモータ
118…減速器
119…磁気シールユニット
12…補助室
121…気密扉
122…排気装置
123…リーク弁
124…回転体軸
125…サーボモータ(第1駆動部)
126…減速器
127…磁気シールユニット
13…仕切バルブ
14…制御装置
2…移載装置
21…回転体
211…回転体本体
212…保持部
213…プレート
214…ピン
22…移載機構
221…移載機構本体
222…リニアスライダ(第2駆動部)
223…把持機構
224…真空モータ(第2駆動部)
225…アクチュエータユニット
226…スライダ
227…バネ
228…ピン
3…被成膜基板(対象物)
31…本体
32…第1リブ
33…第2リブ
34…第1孔
35…第2孔
36…切欠き部
Claims (7)
- 対象物に所定の表面処理を施す成膜室と、前記成膜室と空間的に隔離される補助室と、を備える成膜装置に用いられ、
回転可能とされた回転体であって、前記補助室に設けられ、移載すべき前記対象物が着脱可能に保持される保持部が当該回転体の外周部に沿って設けられた回転体と、
前記対象物を把持及び解放可能な把持機構を有し、前記成膜室に保持された対象物を前記回転体の保持部に移載するとともに、前記回転体に保持された他の対象物を前記成膜室に移載する移載機構と、を備える移載装置。 - 前記保持部は、前記対象物の着脱方向に沿って延在する複数のピンを有し、
前記対象物は、
それぞれの前記ピンに係合する複数の孔と、
前記ピンと前記孔との係合長さ以上の切欠き長さを有し、前記保持部との干渉を避けるための切欠き部と、を有する請求項1に記載の移載装置。 - 前記回転体は、回転体軸が鉛直方向に垂下する片軸構造とされ、
前記保持部は、前記回転体の外周部から垂下して設けられ、前記対象物を把持した移載機構の一部又は全部が前記保持部の間を通過可能とされている請求項1又は2に記載の移載装置。 - 前記回転体を回転駆動する第1駆動部と、
前記移載機構を駆動する第2駆動部と、
前記第1駆動部及び前記第2駆動部を制御する制御部と、をさらに備え、
前記制御部は、前記第1駆動部及び前記第2駆動部を制御して、
前記成膜室に設けられたホルダの移載位置に保持された対象物を前記回転体の保持部の移載位置に移載し、
前記回転体をインデックス回転させ、
前記回転体の保持部の移載位置に保持された対象物を前記ホルダの移載位置に移載し、
前記ホルダをインデックス回転させる請求項1〜3のいずれか一項に記載の移載装置。 - 対象物を保持するホルダを有し、前記ホルダに保持された対象物に所定の表面処理を施す成膜室と、
仕切バルブを介して前記成膜室と空間的に隔離される補助室と、
請求項1〜4のいずれか一項に記載の移載装置と、を備える成膜装置。 - 前記補助室に複数の移載装置が設けられている請求項5に記載の成膜装置。
- 前記補助室において、前記保持部に保持された対象物に前記所定の表面処理又はそれ以外の表面処理を施す請求項5又は6に記載の成膜装置。
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Application Number | Priority Date | Filing Date | Title |
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PCT/JP2020/029241 WO2022024295A1 (ja) | 2020-07-30 | 2020-07-30 | 移載装置及びこれを用いた成膜装置 |
Publications (2)
Publication Number | Publication Date |
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JP6868929B1 true JP6868929B1 (ja) | 2021-05-12 |
JPWO2022024295A1 JPWO2022024295A1 (ja) | 2022-02-03 |
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Application Number | Title | Priority Date | Filing Date |
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JP2020563735A Active JP6868929B1 (ja) | 2020-07-30 | 2020-07-30 | 移載装置及びこれを用いた成膜装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20230123586A1 (ja) |
EP (1) | EP4043608A4 (ja) |
JP (1) | JP6868929B1 (ja) |
KR (1) | KR102318364B1 (ja) |
CN (1) | CN114144542B (ja) |
TW (1) | TWI773387B (ja) |
WO (1) | WO2022024295A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115584472A (zh) * | 2022-11-01 | 2023-01-10 | 上海哈呐技术装备有限公司 | 一种磁控溅射镀膜机 |
CN115772652A (zh) * | 2022-12-05 | 2023-03-10 | 唐山斯腾光电科技有限公司 | 一种红外窗片加工用溅射镀膜设备 |
JP2023036153A (ja) * | 2021-09-02 | 2023-03-14 | キヤノンアネルバ株式会社 | 真空処理装置 |
WO2023108313A1 (zh) * | 2021-12-13 | 2023-06-22 | 湘潭宏大真空技术股份有限公司 | 一种提高工件镀膜均匀度的真空镀膜设备 |
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JP2023036153A (ja) * | 2021-09-02 | 2023-03-14 | キヤノンアネルバ株式会社 | 真空処理装置 |
JP7393400B2 (ja) | 2021-09-02 | 2023-12-06 | キヤノンアネルバ株式会社 | 真空処理装置 |
WO2023108313A1 (zh) * | 2021-12-13 | 2023-06-22 | 湘潭宏大真空技术股份有限公司 | 一种提高工件镀膜均匀度的真空镀膜设备 |
CN115584472A (zh) * | 2022-11-01 | 2023-01-10 | 上海哈呐技术装备有限公司 | 一种磁控溅射镀膜机 |
CN115772652A (zh) * | 2022-12-05 | 2023-03-10 | 唐山斯腾光电科技有限公司 | 一种红外窗片加工用溅射镀膜设备 |
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CN114144542A (zh) | 2022-03-04 |
JPWO2022024295A1 (ja) | 2022-02-03 |
WO2022024295A1 (ja) | 2022-02-03 |
US20230123586A1 (en) | 2023-04-20 |
EP4043608A1 (en) | 2022-08-17 |
TW202204655A (zh) | 2022-02-01 |
KR102318364B1 (ko) | 2021-10-26 |
CN114144542B (zh) | 2022-09-06 |
EP4043608A4 (en) | 2023-07-05 |
TWI773387B (zh) | 2022-08-01 |
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