JP6854768B2 - 周期的かつ選択的な材料の除去及びエッチングのための処理チャンバ - Google Patents
周期的かつ選択的な材料の除去及びエッチングのための処理チャンバ Download PDFInfo
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- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
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- 229920001296 polysiloxane Polymers 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Description
フラットパネルディスプレイや集積回路などの電子デバイスは、通常、層が基板上に堆積され、堆積された材料が所望のパターンにエッチングされる、一連のプロセスによって製造される。これらのプロセスは、通常、物理的気相堆積(PVD)、化学気相堆積(CVD)、プラズマCVD(PECVD)、及び他のプラズマ処理を含む。具体的には、プラズマ処理は、混合処理ガスを真空チャンバに供給することと、無線周波数電力(RF電力)を印加して、処理ガスをプラズマ状態に励起することとを含む。プラズマは、混合ガスを、所望の堆積プロセス又はエッチングプロセスを実施するイオン種に分解する。
Claims (14)
- 処理領域を画定し、かつ、内部で直流プラズマを生成するよう構成された、チャンバ本体と、
静電チャックを備え、前記処理領域の中に配置された、基板支持アセンブリと、
プラズマ遮断スクリーンを有するプレートスタックを備え、前記チャンバ本体に連結されたソースモジュールであって、前記プレートスタックが、前記処理領域を更に画定し、かつ、内部で遠隔プラズマを生成するよう構成されている、ソースモジュールと、
前記プラズマ遮断スクリーンを上昇可能なように、かつ前記プラズマ遮断スクリーンを電気的に接地可能なように構成されている、リフトプレートと、
前記プラズマ遮断スクリーン付近で、前記リフトプレートの一部上に配置されたセラミックスペーサと、
前記チャンバ本体に連結されたフローモジュールと、
対称フローバルブ及び対称ターボ分子ポンプを備え、前記フローモジュールに連結された、排気モジュールと
を備える、処理チャンバ装置であって、前記チャンバ本体、前記ソースモジュール、前記フローモジュール、及び前記排気モジュールが、基板を対称に処理するよう構成される、装置。 - 前記ソースモジュールが、
RF電源と、
RF電極と、
ガス源と、
ガスマニホールドと、
ガス入口チューブと
を更に備える、請求項1に記載の装置。 - フローセンタリングインサートが、前記ガス入口チューブの中の、前記ガスマニホールドの近隣に配置される、請求項2に記載の装置。
- 前記プレートスタックがさらに、
第1ディフューザーと、
面板と、
セラミックリングと、
第2ディフューザーと、
ガス分配デバイスと
を備える、請求項1に記載の装置。 - 遠隔プラズマが、前記面板と前記第2ディフューザーとの間で生成される、請求項4に記載の装置。
- 前記プラズマ遮断スクリーンが、直流プラズマ生成物が前記プレートスタックへと流れることを防止するよう構成される、請求項1に記載の装置。
- 前記第1ディフューザー、前記面板、前記セラミックリング、前記第2ディフューザー、前記ガス分配デバイス、及び前記プラズマ遮断スクリーンの各々が、イットリア又はアルミナを含有するセラミックコーティングでコーティングされる、請求項4に記載の装置。
- 処理領域を画定するチャンバ本体と、
静電チャックを備え、前記処理領域の中に配置された、基板支持アセンブリと、
プレートスタックを備え、前記チャンバ本体に連結された、ソースモジュールと
を備える、処理チャンバ装置であって、前記プレートスタックが、
第1ディフューザー、
面板、
セラミックリング、
第2ディフューザー、
ガス分配デバイス、及び
プラズマ遮断スクリーンを備え、前記処理チャンバ装置が更に、
前記プラズマ遮断スクリーンを上昇可能なように、かつ前記プラズマ遮断スクリーンを電気的に接地可能なように構成されている、リフトプレートと、
前記プラズマ遮断スクリーン付近で、前記リフトプレートの一部上に配置されたセラミックスペーサと、
前記チャンバ本体に連結されたフローモジュールと、
前記フローモジュールに連結された排気モジュールと
を備える、装置。 - 前記ソースモジュールが、RF源及びガス源を更に備える、請求項8に記載の装置。
- 前記RF源が、前記プレートスタックの中で第1プラズマを生成するよう構成される、請求項9に記載の装置。
- 前記RF源が、前記処理領域内で第2プラズマを生成するよう構成される、請求項10に記載の装置。
- 前記ガス源が、前記プレートスタック又は前記処理領域のいずれかに一又は複数の処理ガスを供給するよう構成される、請求項9に記載の装置。
- 前記処理ガスは、H2、He、Ar、O2、NF3、NH3、N2、N2O、H2O、SiF4、SiH4、SiCl4、フッ化炭素前駆体、及びこれらの組み合わせからなる群から選択される、請求項12に記載の装置。
- 前記排気モジュールが対称フローバルブ及びターボ分子ポンプを備える、請求項8に記載の装置。
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JP2021042869A JP7175339B2 (ja) | 2015-09-04 | 2021-03-16 | 周期的かつ選択的な材料の除去及びエッチングのための処理チャンバ |
JP2022178834A JP7425160B2 (ja) | 2015-09-04 | 2022-11-08 | 周期的かつ選択的な材料の除去及びエッチングのための処理チャンバ |
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US201562214902P | 2015-09-04 | 2015-09-04 | |
US62/214,902 | 2015-09-04 | ||
US14/994,425 US11004661B2 (en) | 2015-09-04 | 2016-01-13 | Process chamber for cyclic and selective material removal and etching |
US14/994,425 | 2016-01-13 | ||
PCT/US2016/045202 WO2017039920A1 (en) | 2015-09-04 | 2016-08-02 | Process chamber for cyclic and selective material removal and etching |
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JP (3) | JP6854768B2 (ja) |
KR (2) | KR102451502B1 (ja) |
CN (1) | CN107408486B (ja) |
TW (2) | TWI751637B (ja) |
WO (1) | WO2017039920A1 (ja) |
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CN105431924B (zh) * | 2014-04-09 | 2020-11-17 | 应用材料公司 | 用于解决具有改良的流动均匀性/气体传导性的可变的处理容积的对称腔室主体设计架构 |
US11004661B2 (en) | 2015-09-04 | 2021-05-11 | Applied Materials, Inc. | Process chamber for cyclic and selective material removal and etching |
CN108431930A (zh) * | 2016-01-07 | 2018-08-21 | 应用材料公司 | 具有远程等离子体源和dc电极的原子层蚀刻系统 |
US10204795B2 (en) * | 2016-02-04 | 2019-02-12 | Applied Materials, Inc. | Flow distribution plate for surface fluorine reduction |
US10161034B2 (en) * | 2017-04-21 | 2018-12-25 | Lam Research Corporation | Rapid chamber clean using concurrent in-situ and remote plasma sources |
KR101945378B1 (ko) | 2017-06-27 | 2019-02-07 | 주식회사 포스코 | 합금 코팅 강판 및 이의 제조방법 |
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