JP6853251B2 - How to repair metal wiring - Google Patents

How to repair metal wiring Download PDF

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JP6853251B2
JP6853251B2 JP2018527890A JP2018527890A JP6853251B2 JP 6853251 B2 JP6853251 B2 JP 6853251B2 JP 2018527890 A JP2018527890 A JP 2018527890A JP 2018527890 A JP2018527890 A JP 2018527890A JP 6853251 B2 JP6853251 B2 JP 6853251B2
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insulating film
metal wiring
repair
metal
repairing
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JP2019521502A (en
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テ キム、ヒョン
テ キム、ヒョン
パク、フン
ジュ キム、ソン
ジュ キム、ソン
ウン パク、ジェ
ウン パク、ジェ
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Cowin DST Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H01L21/02288—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating printing, e.g. ink-jet printing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76823—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. transforming an insulating layer into a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76832—Multiple layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
    • H01L21/76894—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern using a laser, e.g. laser cutting, laser direct writing, laser repair

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Optics & Photonics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Description

本発明は、半導体、ディスプレイなどの金属配線のリペア方法に関する。 The present invention relates to a method for repairing metal wiring of a semiconductor, a display, or the like.

半導体やディスプレイの生産工程において、微細線幅を有する金属配線の更なる微細化や更なる高解像度化が進むことに伴い発生する抵抗の問題に起因して、配線の高さが増大している傾向にある。 In the production process of semiconductors and displays, the height of wiring is increasing due to the problem of resistance that occurs with the progress of further miniaturization and higher resolution of metal wiring having a fine line width. There is a tendency.

しかしながら、配線の短絡などの問題を解消するための金属層のリペア工程を適用するとき、高くなった配線の段差に起因して、リペアされた金属層が途切れたり密度が下がったりする問題が発生している。 However, when applying the metal layer repair process to solve problems such as short-circuiting of wiring, there is a problem that the repaired metal layer is interrupted or the density decreases due to the heightened step of the wiring. are doing.

図１を参照すると、短絡された金属配線１０に吐出ユニット４０でリペア金属層３０を形成するとき、高い段差に起因して金属層の間にボイドＶが生じることが分かる。既存のディスプレイ配線の線幅は、一般に、４〜８μｍのレベルであったが、高解像度のパネルの生産過程において２〜３μｍの配線に変更されることに伴い、配線の高さが２０００〜３０００Ａから５０００〜８０００Ａへと増大し、その結果、修理（短絡の接続）のためのリペア金属層３０を形成するとき、段差（ｓｔｅｐ ｃｏｖｅｒａｇｅ）の発生部分において膜厚が薄くなったり、隙間（ボイド）が生じたりする問題が発生している。 With reference to FIG. 1, it can be seen that when the repair metal layer 30 is formed by the discharge unit 40 on the short-circuited metal wiring 10, void V is generated between the metal layers due to the high step. The line width of existing display wiring was generally at the level of 4 to 8 μm, but with the change to wiring of 2 to 3 μm in the process of producing high-resolution panels, the height of the wiring is 2000 to 3000 A. As a result, when the repair metal layer 30 for repair (short-circuit connection) is formed, the film thickness becomes thin or the gap (void) occurs at the step coverage. Is occurring.

このような薄い膜及びボイドＶは、リペアされた金属層３０に高い抵抗値を持たせたり、ひび割れ（クラック）を生じたりして、リペア金属層３０が途切れるといった不良の原因として働くとともに、電気的な特性のばらつきの原因となっている。 Such a thin film and void V act as a cause of defects such as the repaired metal layer 30 having a high resistance value or cracks, and the repair metal layer 30 is interrupted, and also electric electricity. It is a cause of variation in characteristics.

本発明は上述した問題を解消するために案出されたものであり、損傷された金属配線の間に絶縁層を形成して段差を減らしてリペア金属層の短絡を防ぐことを目的とする。
また、リペア金属層の上に絶縁膜を更に形成することにより、リペア金属層を保護することを目的とする。 The present invention has been devised to solve the above-mentioned problems, and an object of the present invention is to form an insulating layer between damaged metal wirings to reduce steps and prevent a short circuit of the repair metal layer.
Another object of the present invention is to protect the repair metal layer by further forming an insulating film on the repair metal layer.

上記の目的を達成するための本発明の金属配線のリペア方法は、損傷された金属配線の間に第１の吐出ユニットで第１の絶縁膜を形成する第１のステップと、前記第１の絶縁膜の上部に第２の吐出ユニットで前記損傷された金属配線を接続するリペア金属層を形成する第２のステップと、前記第１の吐出ユニットで前記リペア金属層の上部に第２の絶縁膜を形成する第３のステップと、を含む。
一実施形態によれば、前記第１の絶縁膜及び第２の絶縁膜は、窒化物、酸化物及び窒酸化物のうちから選ばれたいずれか一種以上を含んでいてもよい。
他の一実施形態によれば、前記窒化物は、Ｓｉ３Ｎ４であってもよい。
更に他の一実施形態によれば、前記酸化物は、ＳｉＯ２であってもよい。
更に他の一実施形態によれば、前記窒酸化物は、Ｓｉ（Ｎ，Ｏ）ｘであってもよい。 The method for repairing a metal wiring of the present invention for achieving the above object includes a first step of forming a first insulating film with a first ejection unit between damaged metal wiring and the first step. The second step of forming the repair metal layer connecting the damaged metal wiring with the second discharge unit on the upper part of the insulating film and the second insulation on the upper part of the repair metal layer with the first discharge unit. Includes a third step of forming the film.
According to one embodiment, the first insulating film and the second insulating film may contain any one or more selected from nitrides, oxides and nitrogen oxides.
According to another embodiment, the nitride may be Si 3 N 4 .
According to still another embodiment, the oxide may be SiO 2.
According to still another embodiment, the nitrogen oxide may be Si (N, O) x.

更に他の一実施形態によれば、前記リペア金属層は、Ａｇ、Ｃｕ、Ａｕのうちから選ばれたいずれか一種以上の金属パーティクルを含むインキにより形成されてもよい。 According to still another embodiment, the repair metal layer may be formed of an ink containing one or more metal particles selected from Ag, Cu, and Au.

更に他の一実施形態によれば、前記第１の絶縁膜及び第２の絶縁膜は、インキを塗布し且つ硬化させて形成し、前記硬化は、レーザーランプにより行われてもよい。
更に他の一実施形態によれば、前記リペア金属層は、 電気流体力学（ＥＨＤ）インキジェット装置により形成されてもよい。
更に他の一実施形態によれば、前記リペア金属層は、レーザー化学気相蒸着装置（ＬＡＳＥＲ ＣＶＤ）により形成されてもよい。
更に他の一実施形態によれば、前記損傷された金属配線の厚さは、２０００〜８０００Ａであってもよい。 According to still another embodiment, the first insulating film and the second insulating film are formed by applying and curing ink, and the curing may be performed by a laser lamp.
According to yet another embodiment, the repair metal layer may be formed by an electrohydrodynamic (EHD) ink jet device.
According to still another embodiment, the repair metal layer may be formed by a laser chemical vapor deposition apparatus (LASER CVD).
According to yet another embodiment, the thickness of the damaged metal wiring may be 2000-8000A.

更に他の一実施形態によれば、 前記損傷された金属配線の間に形成される前記第１の絶縁膜及び前記リペア金属層の合計の厚さは、前記金属配線の厚さよりも小さくてもよい。
更に他の一実施形態によれば、第１の絶縁膜及び第２の絶縁膜は、電気流体力学（ＥＨＤ）インキジェット印刷法により形成されてもよい。 According to still another embodiment, the total thickness of the first insulating film and the repair metal layer formed between the damaged metal wirings may be smaller than the thickness of the metal wirings. Good.
According to still another embodiment, the first insulating film and the second insulating film may be formed by an electrohydrodynamic (EHD) ink jet printing method.

本発明は、損傷された金属配線の間に絶縁層を形成することで損傷された金属配線の段差を減らしてリペア金属層の短絡及びボイドの生成を防ぐことができるというメリットがある。 The present invention has an advantage that by forming an insulating layer between the damaged metal wirings, it is possible to reduce the step of the damaged metal wirings and prevent a short circuit of the repair metal layer and the formation of voids.

また、前記絶縁膜は、平坦化させる役割を果たしてリペア金属層を均一に形成可能にし、このような均一性により均一な電気的特性を持たせることができるという効果がある。
更に、前記リペア金属層の上に更に絶縁膜を形成することにより、外部の環境からリペア金属層を保護することができ、耐久性を向上させることができる。 Further, the insulating film plays a role of flattening and enables uniform formation of the repair metal layer, and has an effect that uniform electrical characteristics can be provided by such uniformity.
Further, by further forming an insulating film on the repair metal layer, the repair metal layer can be protected from the external environment and the durability can be improved.

従来の問題を説明するための模式図Schematic diagram for explaining conventional problems 本発明の一実施形態である金属配線のリペア方法を段階的に説明するための模式図Schematic diagram for stepwise explaining a method of repairing metal wiring according to an embodiment of the present invention. 本発明の一実施形態である金属配線のリペア方法を段階的に説明するための模式図Schematic diagram for stepwise explaining a method of repairing metal wiring according to an embodiment of the present invention. 本発明の一実施形態である金属配線のリペア方法を段階的に説明するための模式図Schematic diagram for stepwise explaining a method of repairing metal wiring according to an embodiment of the present invention.

本発明は様々な変換を加えることができ、種々の実施形態を有することができるが、特定の実施形態を図面に例示し、詳細な説明の欄において詳細に説明する。しかしながら、これは本発明を特定の実施形態に限定しようとするものではなく、本発明の思想及び技術範囲に含まれるあらゆる変換、均等物若しくは代替物を含む。本発明を説明するに当たって、関連する公知の技術についての具体的な説明が本発明の要旨を曖昧にする虞があると認められる場合にはその詳細な説明を省略する。 The present invention can be subjected to various transformations and can have various embodiments, but specific embodiments are illustrated in the drawings and will be described in detail in the detailed description section. However, this is not intended to limit the invention to any particular embodiment, but includes any transformations, equivalents or alternatives within the ideas and technical scope of the invention. In explaining the present invention, if it is recognized that a specific description of the related known technology may obscure the gist of the present invention, the detailed description thereof will be omitted.

本出願において使用した用語は、単に特定の実施形態を説明するために使用されたものであり、本発明を限定しようとする意図を有するものではない。単数の表現は、文脈上、別途に断りのない限り、複数の表現を含む。本出願において、「特徴とする」、「含む」又は「有する」などの用語は、明細書の上に記載されている特徴、数字、段階、動作、構成要素、部品又はこれらを組み合わせたものが存在することを指定するものに過ぎず、一つまたはそれ以上の他の特徴や数字、段階、動作、構成要素、部品又はこれらを組み合わせたものの存在又は付加可能性を予め排除しない。 The terms used in this application are used solely to describe a particular embodiment and are not intended to limit the invention. The singular representation includes multiple representations, unless otherwise noted in the context. In this application, terms such as "feature", "contain" or "have" refer to the features, numbers, stages, actions, components, parts or combinations thereof described above the specification. It merely specifies the existence and does not preclude the existence or addability of one or more other features or numbers, stages, actions, components, components or combinations thereof.

以下、添付図面に基づいて、本発明の好適な実施形態について詳細に説明する。但し、本発明を説明するに当たって、公知の機能若しくは構成についての説明は、本発明の要旨を明瞭にするために省略する。
図２から図４は、本発明の一実施形態である金属配線のリペア方法を示す図であり、これらを参照して本発明の金属配線のリペア方法について説明する。 Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, in explaining the present invention, the description of known functions or configurations will be omitted in order to clarify the gist of the present invention.
2 to 4 are diagrams showing a metal wiring repair method according to an embodiment of the present invention, and the metal wiring repair method of the present invention will be described with reference to these.

本発明の金属配線のリペア方法は、損傷された金属配線１００の間に第１の吐出ユニット４００で第１の絶縁膜２００を形成する第１のステップと、前記第１の絶縁膜２００の上部に第２の吐出ユニット４１０で前記損傷された金属配線１００を接続するリペア金属層３００を形成する第２のステップと、前記第１の吐出ユニット４００で前記リペア金属層３００の上部に第２の絶縁膜２１０を形成する第３のステップと、を含む。 The metal wiring repair method of the present invention includes a first step of forming a first insulating film 200 with a first ejection unit 400 between damaged metal wirings 100, and an upper portion of the first insulating film 200. A second step of forming the repair metal layer 300 connecting the damaged metal wiring 100 with the second discharge unit 410, and a second step on the upper part of the repair metal layer 300 with the first discharge unit 400. A third step of forming the insulating film 210 is included.

本発明の金属配線のリペア方法の第１のステップは、図２に示すように、第１の吐出ユニット４００で損傷された金属配線１００の間に第１の絶縁膜２００を形成する。ここで、金属配線１００は、各種の電子機器の金属配線であってもよい。特に、配線幅が狭いことから、配線高さが増大しつつある半導体やディスプレイに適用される金属配線１００であってもよい。金属配線１００は、ガラスや高分子基板Ｓの上に形成されることが普通であり、必ずしもこれに限定されるとは限らない。 In the first step of the metal wiring repair method of the present invention, as shown in FIG. 2, a first insulating film 200 is formed between the metal wiring 100 damaged by the first discharge unit 400. Here, the metal wiring 100 may be a metal wiring of various electronic devices. In particular, since the wiring width is narrow, the metal wiring 100 may be applied to semiconductors and displays whose wiring height is increasing. The metal wiring 100 is usually formed on glass or the polymer substrate S, and is not necessarily limited to this.

前記第１の絶縁膜２００の素材としては、電気的な絶縁素材である限り、いかなる素材も適用可能である。好ましくは、窒化物、酸化物及び窒酸化物のうちから選ばれたいずれか一種以上を含んでいてもよい。前記窒化物、酸化物及び窒酸化物は、高粘度の絶縁インキを形成し易く、このような高粘度の絶縁インキは、リペア金属層３００の均一な形成のための平坦化作業を行い易いというメリットを有している。更に好ましくは、前記窒化物は、Ｓｉ３Ｎ４であってもよく、前記酸化物は、ＳｉＯ２であってもよく、前記窒酸化物は、Ｓｉ（Ｎ，Ｏ）ｘであってもよい。 As the material of the first insulating film 200, any material can be applied as long as it is an electrical insulating material. Preferably, it may contain any one or more selected from nitrides, oxides and nitrogen oxides. It is said that the nitride, oxide and nitrogen oxide easily form a high-viscosity insulating ink, and such a high-viscosity insulating ink easily performs a flattening operation for uniform formation of the repair metal layer 300. It has merits. More preferably, the nitride may be Si 3 N 4 , the oxide may be SiO 2 , and the nitrogen oxide may be Si (N, O) x. ..

前記第１の吐出ユニット４００は、第１の絶縁膜材料を吐き出す装置であって、いかなる装置、方法も適用可能である。好ましくは、インキジェット印刷法が適用可能であり、更に好ましくは、電気流体力学（ＥＨＤ：Ｅｌｅｃｔｒｏ ｈｙｄｒｏ ｄｙｎａｍｉｃ）インキジェット印刷法により形成可能である。すなわち、所定の周期を有する電気パルス（Ｅｌｅｃｔｒｉｃ Ｐｕｌｓｅ）を加えてインキを塗布して形成してもよい。このような電気流体力学（ＥＨＤ）インキジェット印刷法を用いて第１の絶縁膜４００を形成することにより、高精細で且つ均一な絶縁膜を形成することができるというメリットがある。インキジェット印刷法により形成された第１の絶縁膜４００の素材としては、インキ状態のものを使用するため、硬化過程を経なければならない。硬化方法としては多種多様な方法が適用可能であるが、窒化物、酸化物又は窒酸化物を含むインキの第１の絶縁膜４００の耐久性及び生産性の側面からみて、レーザーランプを適用して硬化させることが好ましい。 The first discharge unit 400 is a device for discharging the first insulating film material, and any device and method can be applied. Preferably, an ink jet printing method is applicable, and more preferably, it can be formed by an electrohydrodynamic (EHD) ink jet printing method. That is, it may be formed by applying an ink by applying an electric pulse having a predetermined period. By forming the first insulating film 400 by using such an electrohydrodynamic (EHD) ink jet printing method, there is an advantage that a high-definition and uniform insulating film can be formed. As the material of the first insulating film 400 formed by the ink jet printing method, an ink state is used, so that it must go through a curing process. Although a wide variety of curing methods can be applied, a laser lamp is applied from the viewpoint of durability and productivity of the first insulating film 400 of the ink containing nitrides, oxides or nitrogen oxides. It is preferable to cure the mixture.

図３は、本発明の第２のステップであるリペア金属層３００の形成を示す図であり、前記第１の絶縁膜２００の上部に第２の吐出ユニット４１０により形成されてもよい。つまり、第１の吐出ユニット４００とは異なる第２の吐出ユニット４１０でリペア金属層を形成してもよい。図３に示すように、第１の絶縁膜２００及び損傷された金属配線１００の上に跨って形成されることが、通電性及び耐久性の側面からみて好ましい。このように、第１の絶縁膜２００が損傷された（短絡された）金属配線１００の間に平坦化膜を形成して、均一であり、しかも、段差の小さいリペア金属層３００を形成することができる。 FIG. 3 is a diagram showing the formation of the repair metal layer 300, which is the second step of the present invention, and may be formed by the second discharge unit 410 on the upper portion of the first insulating film 200. That is, the repair metal layer may be formed by the second discharge unit 410, which is different from the first discharge unit 400. As shown in FIG. 3, it is preferable that the insulating film 200 and the damaged metal wiring 100 are formed over the first insulating film 200 and the damaged metal wiring 100 from the viewpoint of electrical conductivity and durability. In this way, the flattening film is formed between the damaged (short-circuited) metal wiring 100 of the first insulating film 200 to form the repair metal layer 300 which is uniform and has a small step. Can be done.

前記リペア金属層４００は、Ａｇ、Ｃｕ、Ａｕのうちから選ばれたいずれか一種以上の金属パーティクルを含むインキにより形成されてもよい。すなわち、伝導性インキが適用可能である。金属パーティクルとしては、球状、棒状、板状などの様々な形状のパーティクルが適用可能であり、金属が被覆されたコア（Ｃｏｒｅ）状や２種以上の金属粒子が適用可能である。 The repair metal layer 400 may be formed of an ink containing one or more metal particles selected from Ag, Cu, and Au. That is, conductive ink can be applied. As the metal particles, particles having various shapes such as spherical, rod-shaped, and plate-shaped can be applied, and a core-shaped metal-coated particle or two or more kinds of metal particles can be applied.

このようなリペア金属層４００は、様々な装置の適用により形成可能である。好ましくは、電気流体力学（ＥＨＤ）インキジェット装置やレーザー化学気相蒸着（ＬＡＳＥＲ ＣＶＤ）装置により形成可能である。電気流体力学（ＥＨＤ）インキジェット装置やレーザー化学気相蒸着（ＬＡＳＥＲ ＣＶＤ）装置は、リペア金属層４００の均一性及び耐久性の側面からみて、有効であるというメリットを有している。 Such a repair metal layer 400 can be formed by applying various devices. Preferably, it can be formed by an electrohydrodynamic (EHD) ink jet device or a laser chemical vapor deposition (LASER CVD) device. The electrohydrodynamic (EHD) ink jet device and the laser chemical vapor deposition (LASER CVD) device have an advantage that they are effective in terms of the uniformity and durability of the repair metal layer 400.

図３に示すように、前記第１の絶縁膜２００及び前記リペア金属層３００の合計の厚さは、損傷された金属配線１００の厚さよりも小さくてもよい。このように金属配線１００よりも低く形成することにより、金属配線１００との接触面積を広げてリペア金属層３００の通電性を高めることができ、低い抵抗値を持たせることができるという効果がある。なお、段差をもって形成されることにより、外部の環境の物理的な要素による耐久性が向上するというメリットがある。前記損傷された金属配線１００の厚さは、２０００〜８０００Ａであってもよく、第１の絶縁膜２００及び前記リペア金属層３００の合計の厚さは、１５００〜７０００Ａの範囲内に収まれても良い。なお、第１の絶縁膜２００及びリペア金属層３００の形成を同じ条件下で、同じ厚さを有するように行ってもよく、このような条件の同一性により生産性を向上させることができる。 As shown in FIG. 3, the total thickness of the first insulating film 200 and the repair metal layer 300 may be smaller than the thickness of the damaged metal wiring 100. By forming the metal wiring 100 lower than the metal wiring 100 in this way, the contact area with the metal wiring 100 can be widened to increase the electrical conductivity of the repair metal layer 300, and there is an effect that a low resistance value can be provided. .. It should be noted that the formation with a step has an advantage that the durability due to the physical elements of the external environment is improved. The thickness of the damaged metal wiring 100 may be 2000 to 8000A, and the total thickness of the first insulating film 200 and the repair metal layer 300 may be within the range of 1500 to 7000A. good. The first insulating film 200 and the repair metal layer 300 may be formed under the same conditions so as to have the same thickness, and the sameness of such conditions can improve the productivity.

図４は、本願発明の第２の絶縁膜２１０を形成する第３のステップを示す図である。図４を参照すると、前記リペア金属層３００の上部に第２の絶縁膜２１０を第１の吐出ユニット４００で形成してもよい。すなわち、前記第１の絶縁膜２００を形成した第１の吐出ユニット４００で第２の絶縁膜２１０を形成してもよい。第１の吐出ユニット２００で第２の絶縁膜２１０を第１の絶縁膜２００の形成条件と同じ条件下で形成することにより、生産性を向上させることができるというメリットがある。 FIG. 4 is a diagram showing a third step of forming the second insulating film 210 of the present invention. With reference to FIG. 4, a second insulating film 210 may be formed on the repair metal layer 300 by the first discharge unit 400. That is, the second insulating film 210 may be formed by the first discharge unit 400 on which the first insulating film 200 is formed. By forming the second insulating film 210 in the first discharge unit 200 under the same conditions as those for forming the first insulating film 200, there is an advantage that the productivity can be improved.

第２の絶縁膜２１０は、第１の絶縁膜２００の素材と同じ素材により形成されてもよい。すなわち、好ましくは、窒化物、酸化物及び窒酸化物のうちから選ばれたいずれか一種以上を含んでいてもよく、更に好ましくは、前記窒化物は、Ｓｉ３Ｎ４であってもよく、前記酸化物は、ＳｉＯ２であってもよく、前記窒酸化物は、Ｓｉ（Ｎ，Ｏ）ｘであってもよい。このような高粘度の絶縁インキを用いることにより、均一な第２の絶縁膜２１０が形成可能であり、耐久性が向上してリペア金属層３００を保護する機能を向上させることができるというメリットがある。 The second insulating film 210 may be formed of the same material as the material of the first insulating film 200. That is, preferably, it may contain any one or more selected from nitrides, oxides and nitrogen oxides, and more preferably, the nitride may be Si 3 N 4 . The oxide may be SiO 2 , and the nitrogen oxide may be Si (N, O) x. By using such a high-viscosity insulating ink, a uniform second insulating film 210 can be formed, and there is an advantage that the durability can be improved and the function of protecting the repair metal layer 300 can be improved. is there.

また、第１の絶縁膜２００と同様に、第２の絶縁膜２１０の形成方法としては、好ましくは、インキジェット印刷法が適用可能であり、更に好ましくは、電気流体力学（ＥＨＤ）インキジェット印刷法が適用可能である。このような電気流体力学（ＥＨＤ）インキジェット印刷法を用いて第２の絶縁膜２１０を形成することにより、高精細で且つ均一な絶縁膜を形成することができるというメリットがある。なお、塗布された第２の絶縁膜２１０は、レーザーランプを用いて硬化させてもよい。 Further, as in the case of the first insulating film 200, the ink jet printing method is preferably applicable as the method for forming the second insulating film 210, and more preferably, electrohydrodynamic (EHD) ink jet printing. The law is applicable. By forming the second insulating film 210 using such an electrohydrodynamic (EHD) ink jet printing method, there is an advantage that a high-definition and uniform insulating film can be formed. The applied second insulating film 210 may be cured by using a laser lamp.

第２の絶縁膜２１０は、図４に示すように、リペア金属層３００の全面を覆うように形成されてもよい。このように全面を覆うように形成されることにより、外部の化学的、物理的な要素からリペア金属層３００を保護し、リペアされた金属配線の全体の耐久性を向上させることができる。第２の絶縁膜２１０の厚さは、第１の絶縁膜２００の厚さに等しいか又はそれよりも薄くても良い。このような第２の絶縁膜２１０の厚さは、適用される電子機器の特性に応じて変更可能である。但し、生産性の側面からみて、第１の絶縁膜２００と同じ条件下で、第１の絶縁膜２００と同じ厚さを有することが好ましい。 As shown in FIG. 4, the second insulating film 210 may be formed so as to cover the entire surface of the repair metal layer 300. By being formed so as to cover the entire surface in this way, the repair metal layer 300 can be protected from external chemical and physical elements, and the overall durability of the repaired metal wiring can be improved. The thickness of the second insulating film 210 may be equal to or thinner than the thickness of the first insulating film 200. The thickness of such a second insulating film 210 can be changed according to the characteristics of the electronic device to be applied. However, from the viewpoint of productivity, it is preferable to have the same thickness as the first insulating film 200 under the same conditions as the first insulating film 200.

以上述べたように、本発明においては、具体的な構成要素などの特定の事項と、限定された実施形態及び図面により説明されたが、これは、本発明の全般的な理解への一助となるために提供されたものに過ぎず、本発明は、上記の実施形態に何等限定されるものではなく、本発明が属する技術分野において通常の知識を有する者であれば、このような記載から種々の修正及び変形を行うことができる。よって、本発明の思想は、説明された実施形態に限定されてはならず、後述する特許請求の範囲だけではなく、特許請求の範囲と均等若しくは等価的な変形があるあらゆるものは、本発明の思想の範囲に属するものである。 As described above, in the present invention, specific matters such as specific components and limited embodiments and drawings have been described, but this is an aid to the general understanding of the present invention. The present invention is not limited to the above-described embodiment, and any person who has ordinary knowledge in the technical field to which the present invention belongs can use such a description. Various modifications and modifications can be made. Therefore, the idea of the present invention should not be limited to the described embodiments, and not only the scope of claims described later but also anything having a modification equal to or equivalent to the scope of claims of the present invention is the present invention. It belongs to the scope of the idea of.

Claims (12)

損傷によって欠落した金属配線の空隙に第１の吐出ユニットで第１の絶縁膜を形成する第１のステップと、
前記第１の絶縁膜の上部に第２の吐出ユニットで前記損傷された金属配線を接続するリペア金属層を形成する第２のステップと、
前記第１の吐出ユニットで前記リペア金属層の上部に第２の絶縁膜を形成する第３のステップと、を含み、
前記第１の絶縁膜は、前記損傷によって欠落した金属配線の空隙のみに充填され、
前記第１の絶縁膜と前記第２の絶縁膜は、同じインキジェット印刷法で形成し、前記第１の絶縁膜と前記第２の絶縁膜の材料は同じである
ことを特徴とする金属配線のリペア方法。 The first step of forming the first insulating film with the first discharge unit in the gap of the metal wiring missing due to the damage, and
A second step of forming a repair metal layer connecting the damaged metal wiring with a second discharge unit on the upper portion of the first insulating film, and
The first ejection unit includes a third step of forming a second insulating film on top of the repair metal layer.
The first insulating film is filled only in the voids of the metal wiring missing due to the damage.
The metal wiring is characterized in that the first insulating film and the second insulating film are formed by the same ink jet printing method, and the materials of the first insulating film and the second insulating film are the same. How to repair. 前記第１の絶縁膜及び第２の絶縁膜は、窒化物、酸化物及び窒酸化物のうちから選ばれたいずれか一種以上を含む
請求項１に記載の金属配線のリペア方法。 The method for repairing a metal wiring according to claim 1, wherein the first insulating film and the second insulating film include any one or more selected from nitrides, oxides and nitrogen oxides. 前記窒化物は、Ｓｉ３Ｎ４である
請求項２に記載の金属配線のリペア方法。 The method for repairing metal wiring according to claim 2, wherein the nitride is Si 3 N 4. 前記酸化物は、ＳｉＯ２である
請求項２に記載の金属配線のリペア方法。 The method for repairing a metal wiring according to claim 2 , wherein the oxide is SiO 2. 前記窒酸化物は、Ｓｉ（Ｎ，Ｏ）ｘであり、インキジェット印刷法を用いた
請求項２に記載の金属配線のリペア方法。 The method for repairing metal wiring according to claim 2, wherein the nitrogen oxide is Si (N, O) x, and an ink jet printing method is used. 前記リペア金属層は、Ａｇ、Ｃｕ、Ａｕのうちから選ばれたいずれか一種以上の金属パーティクルを含むインキにより形成される
請求項１に記載の金属配線のリペア方法。 The method for repairing metal wiring according to claim 1, wherein the repair metal layer is formed of an ink containing one or more metal particles selected from Ag, Cu, and Au. 前記第１の絶縁膜及び第２の絶縁膜は、インキを塗布し且つ硬化させて形成し、前記硬化は、レーザーランプにより行われる
請求項１に記載の金属配線のリペア方法。 The metal wiring repair method according to claim 1, wherein the first insulating film and the second insulating film are formed by applying and curing ink, and the curing is performed by a laser lamp. 前記リペア金属層は、 電気流体力学（ＥＨＤ）インキジェット装置により形成される
請求項１に記載の金属配線のリペア方法。 The method for repairing metal wiring according to claim 1, wherein the repair metal layer is formed by an electrohydrodynamic (EHD) ink jet device. 前記リペア金属層は、レーザー化学気相蒸着装置により形成される
請求項１に記載の金属配線のリペア方法。 The method for repairing metal wiring according to claim 1, wherein the repair metal layer is formed by a laser chemical vapor deposition apparatus. 損傷された金属配線の厚さは、２０００〜８０００Ａであることを特徴とする請求項１に記載の金属配線のリペア方法。 The method for repairing a metal wiring according to claim 1, wherein the thickness of the damaged metal wiring is 2000 to 8000A. 前記損傷された金属配線の間に形成される前記第１の絶縁膜及び前記リペア金属層の合計の厚さは、前記金属配線の厚さよりも小さい
請求項１０に記載の金属配線のリペア方法。 The method for repairing a metal wiring according to claim 10, wherein the total thickness of the first insulating film and the repair metal layer formed between the damaged metal wirings is smaller than the thickness of the metal wirings. 第１の絶縁膜及び第２の絶縁膜は、電気流体力学（ＥＨＤ）インキジェット印刷法により形成される
請求項１に記載の金属配線のリペア方法。 The metal wiring repair method according to claim 1, wherein the first insulating film and the second insulating film are formed by an electrohydrodynamic (EHD) ink jet printing method.
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