TWI602477B - Patterned structure for electronic device and manufacturing method thereof - Google Patents

Description

Pattern structure for electronic components and method of manufacturing the same

The present invention relates to a pattern structure, and in particular to a pattern structure having a large step height.

The use of a printing process to form electronic components has many advantages, including a simple and fast process. In particular, the ink can be printed into any pattern by simple steps of alignment, printing, and curing, thereby avoiding the cumbersome steps required to perform the lithography process. In addition, the printing process uses less equipment, high material usage, and a short manufacturing cycle, thereby reducing the manufacturing cost of electronic components.

In particular, the printing process includes inkjet printing. In ink jet printing, if the step height is too large (for example, greater than 200 nm), there may be a problem that the subsequently formed film layer is discontinuous at the side walls of the step.

The present invention provides a pattern structure with better step coverage.

The present invention provides a method of fabricating a pattern structure that avoids the problem of discontinuity of the film layer on the sidewalls of the step.

In an embodiment of the invention, the pattern structure is for electronic components. The pattern structure includes a pattern layer, a barrier structure, a cantilever structure, and a connection structure. The pattern layer is disposed on the substrate. The blocking structure is disposed on the substrate on one side of the pattern layer, wherein the thickness of the blocking structure is less than the thickness of the pattern layer. The cantilever structure is coupled between the pattern layer and the barrier structure. The connection structure is connected between the pattern layer and the substrate on one side thereof, and is located on the cantilever structure and the barrier structure.

In an embodiment of the invention, in the above pattern structure, the thickness of the pattern layer may be greater than 200 nm.

In an embodiment of the invention, in the above pattern structure, the ratio of the thickness of the barrier structure to the thickness of the pattern layer may range from 1:2 to 3:20.

In an embodiment of the invention, in the above pattern structure, the ratio of the spacing between the barrier structure and the pattern layer to the thickness of the pattern layer may range from 3:5 to 7:4.

In an embodiment of the invention, in the above pattern structure, the blocking structure may surround the pattern layer.

In an embodiment of the invention, in the pattern structure, the top surface of the cantilever structure may be a sloped surface, the higher side of which is connected to the pattern layer and the lower side of which is connected to the barrier structure.

In an embodiment of the invention, in the above pattern structure, the material of the cantilever structure may be different from the material of the blocking structure.

In an embodiment of the invention, in the above pattern structure, the material of the connection structure may include a conductor material and an insulation material.

In an embodiment of the invention, the pattern structure is for electronic components. The pattern structure includes a pattern layer, a barrier structure, a cantilever structure, and a connection structure. The pattern layer is disposed on the substrate. The blocking structure is disposed on the substrate on one side of the pattern layer, wherein the thickness of the blocking structure is less than the thickness of the pattern layer. The cantilever structure is coupled between the pattern layer and the barrier structure. The connection structure is disposed on the pattern layer, the cantilever structure, and the barrier structure, wherein the material of the barrier structure and the material of the connection structure both comprise a conductor material.

The method of manufacturing the pattern structure of the present invention is used for electronic components. The manufacturing method of the pattern structure includes the following steps. A pattern layer is formed on the substrate. A barrier structure is formed that is formed on the substrate on one side of the pattern layer, wherein the thickness of the barrier structure is less than the thickness of the pattern layer. A cantilever structure is formed that is formed to be connected between the pattern layer and the barrier structure. A connection structure is formed which is formed to be connected between the pattern layer and the substrate on one side thereof, and formed on the cantilever structure and the barrier structure.

In an embodiment of the invention, in the method of fabricating the pattern structure described above, the method of forming the barrier structure, the cantilever structure, and the connection structure may include inkjet printing.

Based on the above, by providing the barrier structure and the cantilever structure on one side of the pattern layer, the slope between the pattern layer and the substrate on one side thereof can be lowered, or the height difference on the side of the pattern layer can be reduced. Therefore, when the connection structure between the pattern layer and the substrate on one side thereof is formed, discontinuity of the connection structure on the sidewall of the pattern layer can be avoided, and the step coverage of the connection structure can be improved. In addition, the size of the cantilever structure can be easily adjusted by adjusting the thickness of the barrier structure, the thickness of the cantilever structure, and the pitch of the barrier structure from the pattern layer. In other words, the above gradient or height difference can be simply adjusted.

The above described features and advantages of the invention will be apparent from the following description.

1A through 1C are schematic cross-sectional views showing a manufacturing process of a pattern structure in accordance with an embodiment of the present invention.

Referring to FIG. 1A, a method of fabricating a pattern structure of the present embodiment is applied to an electronic component, which includes the following steps. First, the pattern layer 102 is formed on the substrate 100. In an embodiment, the substrate 100 can include a semiconductor substrate, a glass substrate, or a soft substrate. The pattern layer 102 can be a film composed of any material, and the pattern layer 102 can also be a semiconductor element or a die. The present invention is not limited to the type of the substrate 100 and the pattern layer 102. The thickness h1 of the pattern layer 102 may be greater than 200 nm. If a layer is directly formed on the pattern layer 102 by inkjet printing, the film layer may be caused by an excessive step height between the pattern layer 102 and the substrate 100 on one side thereof. A problem of discontinuity occurs on the sidewalls of the pattern layer 102. For example, the above-mentioned film layer may be a connection structure connected between the pattern layer 102 and the substrate 100 on one side thereof.

Next, a barrier structure 104 is formed on the substrate 100 on one side of the pattern layer 102. In the present embodiment, the material of the blocking structure 104 may be an insulating material. For example, the insulating material may include a polymer material such as epoxy, an oxide or an oxynitride. In other embodiments, the material of the barrier structure 104 can also be a conductor material. For example, the conductor material can include a metallic material or a metal nitride. In an embodiment, the method of forming the barrier structure 104 can include a dispensing process or an inkjet printing process. First, an ink containing a material of the barrier structure 104 is formed on the substrate 100 on one side of the pattern layer 102. Next, a curing process is performed to remove the solvent in the ink to form the barrier structure 104. The barrier structure 104 is formed such that its thickness h2 is smaller than the thickness h1 of the pattern layer 102. In an embodiment, the ratio of the thickness h2 of the blocking structure 104 to the thickness h1 of the pattern layer 102 may range from 1:2 to 3:20. The ratio of the distance d1 between the barrier structure 104 and the pattern layer 102 to the thickness h1 of the pattern layer 102 may range from 3:5 to 7:4. In one embodiment, the viscosity of the ink used to form the barrier structure 104 may be greater than 1 mPa·s, that is, greater than the viscosity coefficient of water. Accordingly, it is advantageous to control the thickness h2 of the blocking structure 104 and to control the spacing d1 between the blocking structure 104 and the pattern layer 102.

In other embodiments, the method of forming the barrier structure 104 may also be other suitable coating processes, and the cross-sectional shape of the barrier structure 104 is not limited to the hemispherical shape as shown in FIG. 1A. In an embodiment, the blocking structure 104 can be formed to surround the pattern layer 102 to form a closed pattern. In other embodiments, the blocking structure 104 may partially surround the pattern layer 102.

Referring to FIG. 1B, next, a cantilever structure 106 is formed. The cantilever structure 106 is formed to be connected between the pattern layer 102 and the barrier structure 104. In one embodiment, the method of forming the cantilever structure 106 can include an inkjet printing process that includes the steps of forming ink on the substrate 100 and performing a curing process. By providing the barrier structure 104, the diffusion range of the ink used to form the cantilever structure 106 can be limited between the barrier structure 104 and the pattern layer 102. Accordingly, the size of the cantilever structure 106 can be simply adjusted by adjusting the thickness h2 of the blocking structure 104 and the spacing d1 of the blocking structure 104 from the pattern layer 102. In addition, since the diffusion range of the ink for forming the cantilever structure 106 can be limited, an ink having a lower viscosity coefficient can be selected so that it can be quickly diffused between the barrier structure 104 and the pattern layer 102, and cured. The cantilever structure 106 is then formed. Therefore, the speed at which the cantilever structure 106 is formed can be increased. In one embodiment, the viscosity of the ink used to form the cantilever structure 106 may be less than the viscosity of the ink used to form the barrier structure 104. For example, the viscosity of the ink used to form the cantilever structure 106 can be less than 1 mPa·s.

In one embodiment, the top surface of the cantilever structure 106 can be a beveled surface with a higher side attached to the pattern layer 102 and a lower side coupled to the barrier structure 104. In particular, the bevel may be coupled between the top of the sidewall of the patterned layer 102 and the top of the barrier structure 104. Therefore, the slope between one side of the pattern layer 102 and the substrate 100 can be lowered. In addition, the slope can be simply changed by adjusting the thickness h2 of the barrier structure 104, the thickness h1 of the pattern layer 102, and the pitch d1 between the barrier structure 104 and the pattern layer 102. For example, the thickness of the barrier structure 104 can be adjusted by adjusting the viscosity coefficient of the ink used to form the barrier structure 104. More specifically, the higher the viscosity coefficient of the ink for forming the barrier structure 104, the less the ink is more likely to spread around, so that it is easier to form the barrier structure 104 having a larger thickness.

In other embodiments, the top surface of the cantilever structure 106 can be a plane, a bevel, a curved surface, or a combination thereof, and the cantilever structure 106 is formed such that the height difference between the pattern layer 102 and the top surface of the cantilever structure 106 is less than 200 nm, According to this, the height difference on the side of the pattern layer 102 can be reduced. Additionally, the thickness of the barrier structure 104 and the cantilever structure 106 can be adjusted to simply change the height difference between the pattern layer 102 and the top surface of the cantilever structure 106.

In an embodiment, the material of the cantilever structure 106 can be different than the material of the barrier structure 104. For example, the material of the cantilever structure 106 can be an insulating material, and the material of the blocking structure 104 can be a conductive material. Conversely, the material of the cantilever structure 106 can be a conductive material, and the material of the barrier structure 104 can be an insulating material. In other embodiments, the material of the cantilever structure 106 and the barrier structure 104 can be both an insulating material or a conductive material.

Referring to FIG. 1C, the connection structure 108 is then formed to complete the fabrication of the pattern structure 110. The connection structure 108 is formed to be connected between the pattern layer 102 and the substrate 100 on one side thereof and on the cantilever structure 106 and the barrier structure 104 or to cover the cantilever structure 106 and the barrier structure 104. The method of forming the connection structure 108 can include an inkjet printing process. The material of the connection structure 108 may comprise a conductor material or an insulating material. In the present embodiment, the material of the connection structure 108 may be different from the material of the barrier structure 104. For example, the material of the connection structure 108 can be a conductor material, and the material of the barrier structure 104 can be an insulation material. In addition, in an embodiment, the material of the connection structure 108 can be an insulating material or a conductor material at the same time as the cantilever structure 106, so that the cantilever structure 106 and the connection structure 108 can be formed in the same step, and the process can be further simplified.

By providing the barrier structure 104 and the cantilever structure 106, the slope between one side of the pattern layer 102 and the substrate 100 can be reduced, or the height difference between the pattern layer 102 and the top surface of the cantilever structure 106 can be less than 200 nm. Therefore, when the connection structure 108 is formed, the discontinuity of the connection structure 108 on the sidewall of the pattern layer 102 can be avoided, thereby improving the step coverage of the connection structure 108. In addition, by adjusting the thickness h2 of the blocking structure 104, the thickness h1 of the pattern layer 102, and the pitch d1, the slope of the top surface of the cantilever structure 106 or the height difference between the pattern layer 102 and the top surface of the cantilever structure 106 can be changed. Therefore, the length of the connection structure 108 on the cantilever structure 106 and the barrier structure 104 can be indirectly adjusted, so that the electrical resistance of the connection structure 108 and the overall area of the pattern structure 110 can be simply adjusted.

Hereinafter, the pattern structure 110 of the present invention will be described with reference to FIG. 1C. The pattern structure 110 includes a pattern layer 102, a barrier structure 104, a cantilever structure 106, and a connection structure 108. The pattern layer 102 is disposed on the substrate 100. The blocking structure 104 is disposed on the substrate 100 on one side of the pattern layer 102, wherein the thickness h2 of the blocking structure 104 is smaller than the thickness h1 of the pattern layer 102. The cantilever structure 106 is connected between the pattern layer 102 and the blocking structure 104. The connection structure 108 is connected between the pattern layer 102 and the substrate 100 on one side thereof, and is located on the cantilever structure 106 and the barrier structure 104 or covers the cantilever structure 106 and the barrier structure 104. The thickness h1 of the pattern layer 102 may be greater than 200 nm. The ratio of the thickness h2 of the barrier structure 104 to the thickness h1 of the pattern layer 102 may range from 1:2 to 3:20. The ratio of the distance d1 between the barrier structure 104 and the pattern layer 102 to the thickness h1 of the pattern layer 102 may range from 3:5 to 7:4. The blocking structure 104 can surround the pattern layer 102. The top surface of the cantilever structure 106 can be a beveled surface with a higher side attached to the pattern layer 102 and a lower side connected to the barrier structure 104. The material of the barrier structure 104, the material of the cantilever structure 106, and the material of the connection structure 108 may each comprise a conductor material or an insulating material. In the present embodiment, the material of the barrier structure 104 may be different than the material of the connection structure 108. For example, the material of the barrier structure 104 can be an insulating material, and the material of the connection structure 108 can be a conductor material. Additionally, the material of the cantilever structure 106 can be different than the material of the barrier structure 104. For example, the material of the cantilever structure 106 and the material of the barrier structure 104 may be insulating materials that are different from each other.

2 is a cross-sectional view of a pattern structure in accordance with an embodiment of the present invention. The pattern structure 220 of FIG. 2 is similar to the pattern structure 110 of FIG. 1C, and the differences will be described in detail below, and the same portions will not be described again.

Referring to FIG. 2 , the blocking structure 204 of the pattern structure 220 is disposed on the pattern layer 102 , the cantilever structure 106 and the blocking structure 204 . The material of the barrier structure 204 and the material of the connection structure 208 each comprise a conductor material. In an embodiment, the connection structure 208 can be an interconnection of electronic components. Since the connection structure 208 can be electrically connected to the substrate 100 by the barrier structure 204, the connection structure 208 does not need to cross the barrier structure 204 to be in contact with the substrate 100. Therefore, the mechanical strength of the connection structure 208 can be enhanced, thereby improving the reliability of the electronic component.

3 is a cross-sectional view of a pattern structure in accordance with an embodiment of the present invention. The pattern structure 330 of FIG. 3 is similar to the pattern structure 110 of FIG. 1C, and the differences will be described in detail below, and the same portions will not be described again.

Referring to FIG. 3, the pattern structure 330 can be a two-layer structure. Specifically, the pattern structure 330 further includes a pattern layer 302 , a barrier structure 304 , and a cantilever structure 306 disposed on the pattern layer 102 . Additionally, the connection structure 308 can be formed to connect the pattern layer 302, the pattern layer 102, and the substrate 100. The connection structure 308 is located on the cantilever structure 306, the barrier structure 304, the cantilever structure 106, and the barrier structure 104, or may cover the cantilever structure 306, the barrier structure 304, the cantilever structure 106, and the barrier structure 104. In an embodiment, the connection structure 308 can cover the cantilever structure 306, the barrier structure 304, the pattern layer 102, and the substrate 100. In addition, in other embodiments, the pattern structure may be a three-layer structure, a four-layer structure, or the like, and the present invention is not limited to the number of layers of the pattern structure.

In summary, by providing the barrier structure and the cantilever structure on one side of the pattern layer, the slope between the pattern layer and the substrate on one side thereof can be reduced, or the height difference on one side of the pattern layer can be reduced. Therefore, when the connection structure is formed on the pattern layer, the discontinuity of the connection structure on the sidewall of the pattern layer can be avoided, and the step coverage of the connection structure can be improved. In addition, the size of the cantilever structure can be easily adjusted by adjusting the thickness of the barrier structure, the thickness of the cantilever structure, and the pitch of the barrier structure from the pattern layer. In other words, the above slope or height difference can be simply adjusted.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

100‧‧‧Base

102, 302‧‧‧ pattern layer

104, 204, 304‧‧‧ blocking structure

106, 306‧‧‧ cantilever structure

108, 208, 308‧‧‧ connection structure

110, 220, 330‧‧‧ pattern structure

H1, h2‧‧‧ thickness

D1‧‧‧ spacing

1A through 1C are schematic cross-sectional views showing a manufacturing process of a pattern structure in accordance with an embodiment of the present invention. 2 is a cross-sectional view of a pattern structure in accordance with an embodiment of the present invention. 3 is a cross-sectional view of a pattern structure in accordance with an embodiment of the present invention.

100‧‧‧Base

102‧‧‧pattern layer

104‧‧‧Block structure

106‧‧‧cantilever structure

108‧‧‧Connection structure

110‧‧‧pattern structure

H1, h2‧‧‧ thickness

D1‧‧‧ spacing

Claims (10)

A pattern structure for an electronic component, the pattern structure comprising: a pattern layer disposed on the substrate; and a blocking structure disposed on the substrate on one side of the pattern layer, wherein the thickness of the barrier structure is less than a thickness of the pattern layer; a cantilever structure disposed on the substrate and between the pattern layer and the barrier structure, wherein the cantilever structure connects the pattern layer and the barrier structure; and the connection structure is connected to The pattern layer is located between the cantilever structure and the barrier structure between the substrate on one side thereof. The pattern structure of claim 1, wherein the pattern layer has a thickness greater than 200 nm. The pattern structure of claim 1, wherein a ratio of a thickness of the barrier structure to a thickness of the pattern layer ranges from 1:2 to 3:20. The pattern structure of claim 1, wherein a ratio of a pitch between the barrier structure and the pattern layer to a thickness of the pattern layer ranges from 3:5 to 7:4. The pattern structure of claim 1, wherein the barrier structure surrounds the pattern layer. The pattern structure of claim 1, wherein the top surface of the cantilever structure is a sloped surface, the higher side of which is connected to the pattern layer and the lower side of which is connected to the barrier structure. The pattern structure of claim 1, wherein the material of the cantilever structure and the material of the barrier structure comprise an insulating material or a conductor material, respectively. A pattern structure for an electronic component, the pattern structure comprising: a pattern layer disposed on the substrate; and a blocking structure disposed on the substrate on one side of the pattern layer, wherein the thickness of the barrier structure is less than a thickness of the pattern layer; a cantilever structure disposed on the substrate and located between the pattern layer and the barrier structure, wherein the cantilever structure connects the pattern layer and the barrier structure; and a connection structure, a configuration On the pattern layer, the cantilever structure and the barrier structure, wherein the material of the barrier structure and the material of the connection structure both comprise a conductor material. A method of fabricating a pattern structure for an electronic component, the method of fabricating the pattern structure comprising: forming a pattern layer on a substrate; forming a barrier structure, the barrier structure being formed on the substrate on one side of the pattern layer Above, wherein the barrier structure has a thickness smaller than a thickness of the pattern layer; forming a cantilever structure formed on the substrate and between the pattern layer and the barrier structure, wherein the cantilever Structure connecting the pattern layer and the barrier structure; and forming a connection structure, the connection structure being formed to be connected to the pattern layer and Between the substrates on one side thereof, and formed on the cantilever structure and the barrier structure. The method of fabricating a pattern structure according to claim 9, wherein the method of forming the barrier structure, the cantilever structure, and the connection structure comprises inkjet printing.