JP6851725B2 - 新規化合物及びその製造方法 - Google Patents
新規化合物及びその製造方法 Download PDFInfo
- Publication number
- JP6851725B2 JP6851725B2 JP2016066102A JP2016066102A JP6851725B2 JP 6851725 B2 JP6851725 B2 JP 6851725B2 JP 2016066102 A JP2016066102 A JP 2016066102A JP 2016066102 A JP2016066102 A JP 2016066102A JP 6851725 B2 JP6851725 B2 JP 6851725B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- substituted
- groups
- atom
- same
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 0 CN1c(c(*)ccc2*)c2N(C)C1c1ccccc1 Chemical compound CN1c(c(*)ccc2*)c2N(C)C1c1ccccc1 0.000 description 9
- BKCYIOZAJXIRBL-UHFFFAOYSA-N CN(C)c(cc1N(C)C(c2ccccc2)N(C)c1c1)c1N(C)C Chemical compound CN(C)c(cc1N(C)C(c2ccccc2)N(C)c1c1)c1N(C)C BKCYIOZAJXIRBL-UHFFFAOYSA-N 0.000 description 1
- YIKQVBIEOWVCHI-UHFFFAOYSA-N CN(C)c1ccc(C2N(C)c3cc(N(C)C)ccc3N2C)cc1 Chemical compound CN(C)c1ccc(C2N(C)c3cc(N(C)C)ccc3N2C)cc1 YIKQVBIEOWVCHI-UHFFFAOYSA-N 0.000 description 1
- ADYDRZPIQBBFKI-UHFFFAOYSA-N CN(C)c1ccc2N(C)C(c(cccc3)c3N(C)C)N(C)c2c1 Chemical compound CN(C)c1ccc2N(C)C(c(cccc3)c3N(C)C)N(C)c2c1 ADYDRZPIQBBFKI-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D235/00—Heterocyclic compounds containing 1,3-diazole or hydrogenated 1,3-diazole rings, condensed with other rings
- C07D235/02—Heterocyclic compounds containing 1,3-diazole or hydrogenated 1,3-diazole rings, condensed with other rings condensed with carbocyclic rings or ring systems
- C07D235/04—Benzimidazoles; Hydrogenated benzimidazoles
- C07D235/18—Benzimidazoles; Hydrogenated benzimidazoles with aryl radicals directly attached in position 2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
- H10K50/165—Electron transporting layers comprising dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/30—Doping active layers, e.g. electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
- H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/115—Polyfluorene; Derivatives thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials Engineering (AREA)
- Photovoltaic Devices (AREA)
- Electroluminescent Light Sources (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Plural Heterocyclic Compounds (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016066102A JP6851725B2 (ja) | 2016-03-29 | 2016-03-29 | 新規化合物及びその製造方法 |
| PCT/JP2017/011172 WO2017169971A1 (ja) | 2016-03-29 | 2017-03-21 | 新規化合物及びその製造方法 |
| US16/089,485 US11046655B2 (en) | 2016-03-29 | 2017-03-21 | Compound and method for producing same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016066102A JP6851725B2 (ja) | 2016-03-29 | 2016-03-29 | 新規化合物及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017178819A JP2017178819A (ja) | 2017-10-05 |
| JP2017178819A5 JP2017178819A5 (enExample) | 2019-03-22 |
| JP6851725B2 true JP6851725B2 (ja) | 2021-03-31 |
Family
ID=59964315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016066102A Expired - Fee Related JP6851725B2 (ja) | 2016-03-29 | 2016-03-29 | 新規化合物及びその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US11046655B2 (enExample) |
| JP (1) | JP6851725B2 (enExample) |
| WO (1) | WO2017169971A1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7108493B2 (ja) * | 2018-08-06 | 2022-07-28 | 日本放送協会 | 有機薄膜および有機薄膜の製造方法、有機エレクトロルミネッセンス素子およびその製造方法、表示装置、照明装置、有機薄膜太陽電池、薄膜トランジスタ |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007107356A1 (en) | 2006-03-21 | 2007-09-27 | Novaled Ag | Method for preparing doped organic semiconductor materials and formulation utilized therein |
| DE502006000749D1 (de) | 2006-03-21 | 2008-06-19 | Novaled Ag | Heterocyclisches Radikal oder Diradikal, deren Dimere, Oligomere, Polymere, Dispiroverbindungen und Polycyclen, deren Verwendung, organisches halbleitendes Material sowie elektronisches Bauelement |
| EP1837927A1 (de) | 2006-03-22 | 2007-09-26 | Novaled AG | Verwendung von heterocyclischen Radikalen zur Dotierung von organischen Halbleitern |
| JP2008110935A (ja) * | 2006-10-30 | 2008-05-15 | Kowa Co | 2−フェニルベンゾイミダゾール誘導体を有効成分とするstat6活性化阻害剤 |
| JP2008214613A (ja) * | 2007-02-07 | 2008-09-18 | Fujifilm Corp | 陽イオン化合物およびその製造方法 |
| EP2009014B1 (de) | 2007-06-22 | 2018-10-24 | Novaled GmbH | Verwendung eines Precursors eines n-Dotanden zur Dotierung eines organischen halbleitenden Materials, Precursor und elektronisches oder optoelektronisches Bauelement |
| WO2011127075A1 (en) * | 2010-04-05 | 2011-10-13 | The Board Of Trustees Of The Leland Stanford Junior University. | N-type doped organic materials and methods therefor |
| US9263524B2 (en) * | 2011-04-05 | 2016-02-16 | The Board Of Trustees Of The Leland Stanford Junior University | Semiconductor materials, apparatuses and methods |
| GB2501905B (en) * | 2012-05-10 | 2015-07-08 | Lomox Ltd | Improved methods for producing organic light emitting diode (OLED) materials |
| KR101989057B1 (ko) | 2012-09-07 | 2019-06-14 | 삼성디스플레이 주식회사 | 유기 전계 발광 소자 |
| KR101636137B1 (ko) * | 2014-07-31 | 2016-07-04 | 포항공과대학교 산학협력단 | 메모리 소자용 유기 도핑 재료, 이를 포함하는 비휘발성 메모리 소자 및 이의 제조방법 |
| CN110343073A (zh) | 2015-07-02 | 2019-10-18 | 昆山国显光电有限公司 | 苯并咪唑类n-型掺杂剂及其在有机电致发光器件中的应用 |
| JP6224758B2 (ja) * | 2016-03-29 | 2017-11-01 | 住友化学株式会社 | 発光素子及びその製造方法 |
-
2016
- 2016-03-29 JP JP2016066102A patent/JP6851725B2/ja not_active Expired - Fee Related
-
2017
- 2017-03-21 WO PCT/JP2017/011172 patent/WO2017169971A1/ja not_active Ceased
- 2017-03-21 US US16/089,485 patent/US11046655B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| WO2017169971A1 (ja) | 2017-10-05 |
| US11046655B2 (en) | 2021-06-29 |
| US20200140394A1 (en) | 2020-05-07 |
| JP2017178819A (ja) | 2017-10-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6427681B2 (ja) | 組成物、燐光発光性化合物及び発光素子 | |
| CN113421989B (zh) | 发光元件及对于制造该发光元件而言有用的组合物 | |
| JP6822363B2 (ja) | 発光素子 | |
| JP6224758B2 (ja) | 発光素子及びその製造方法 | |
| CN110386930B (zh) | 聚集诱导发光化合物、其制备方法及其应用 | |
| JP6610536B2 (ja) | 発光素子およびそれに用いる組成物 | |
| JP2015110751A (ja) | 組成物およびそれを用いた発光素子 | |
| JPWO2015008851A1 (ja) | 組成物およびそれを用いた発光素子 | |
| WO2019004247A1 (ja) | 発光素子及びその製造に有用な高分子化合物 | |
| JP6175818B2 (ja) | 新規重合体、これを含むインク、有機膜、電子デバイス、及びエレクトロルミネッセンス素子及び有機トランジスタ | |
| JP6826930B2 (ja) | 発光素子 | |
| CN108140741B (zh) | 发光元件 | |
| CN113490673A (zh) | 金属络合物和包含所述金属络合物的组合物 | |
| CN106538059A (zh) | 发光元件的制造方法 | |
| JP6851725B2 (ja) | 新規化合物及びその製造方法 | |
| CN110235266B (zh) | 组合物和使用该组合物得到的发光元件 | |
| JP2015174824A (ja) | 金属錯体およびそれを用いた発光素子 | |
| JP2018083940A (ja) | 組成物及びそれを用いた発光素子 | |
| US9000170B2 (en) | Process for the preparation of tetracarboxynaphthalenediimide compounds disubstituted with heteroaryl groups | |
| CN108659010A (zh) | 一种有机化合物及其在有机电致发光器件中的应用 | |
| JP7427318B2 (ja) | 新規な化合物およびこれを利用した有機発光素子 | |
| JP7638683B2 (ja) | 金属錯体並びにそれを含有する組成物及び発光素子 | |
| JP6543902B2 (ja) | 金属錯体およびそれを用いた発光素子 | |
| JP6320642B2 (ja) | 組成物 | |
| JP6572682B2 (ja) | 化合物及びそれを用いた発光素子 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190129 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190129 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20191015 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200109 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200512 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200811 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210112 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210209 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210224 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210310 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6851725 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |