JP6830878B2 - 半導体装置の製造方法、基板処理装置、プログラム - Google Patents

半導体装置の製造方法、基板処理装置、プログラム Download PDF

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JP6830878B2
JP6830878B2 JP2017188787A JP2017188787A JP6830878B2 JP 6830878 B2 JP6830878 B2 JP 6830878B2 JP 2017188787 A JP2017188787 A JP 2017188787A JP 2017188787 A JP2017188787 A JP 2017188787A JP 6830878 B2 JP6830878 B2 JP 6830878B2
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processing chamber
gas
raw material
nozzle
inert gas
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JP2019067820A (ja
JP2019067820A5 (enExample
Inventor
奥田　和幸
和幸 奥田
南　政克
南　　政克
吉延 中村
吉延 中村
康祐 ▲たか▼木
康祐 ▲たか▼木
加我　友紀直
友紀直 加我
竹林　雄二
雄二 竹林
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Kokusai Electric Corp
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Kokusai Electric Corp
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Priority to JP2017188787A priority Critical patent/JP6830878B2/ja
Priority to CN201811053128.9A priority patent/CN109585265B/zh
Priority to TW107132095A priority patent/TWI677918B/zh
Priority to KR1020180112882A priority patent/KR102149580B1/ko
Priority to US16/137,331 priority patent/US10640869B2/en
Publication of JP2019067820A publication Critical patent/JP2019067820A/ja
Publication of JP2019067820A5 publication Critical patent/JP2019067820A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
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  • Organic Chemistry (AREA)
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  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2017188787A 2017-09-28 2017-09-28 半導体装置の製造方法、基板処理装置、プログラム Active JP6830878B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2017188787A JP6830878B2 (ja) 2017-09-28 2017-09-28 半導体装置の製造方法、基板処理装置、プログラム
CN201811053128.9A CN109585265B (zh) 2017-09-28 2018-09-10 半导体器件的制造方法、衬底处理装置、记录介质
TW107132095A TWI677918B (zh) 2017-09-28 2018-09-12 半導體裝置之製造方法、基板處理裝置、記錄媒體
KR1020180112882A KR102149580B1 (ko) 2017-09-28 2018-09-20 반도체 장치의 제조 방법, 기판 처리 장치, 기록매체
US16/137,331 US10640869B2 (en) 2017-09-28 2018-09-20 Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

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Application Number Priority Date Filing Date Title
JP2017188787A JP6830878B2 (ja) 2017-09-28 2017-09-28 半導体装置の製造方法、基板処理装置、プログラム

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