JP6823799B2 - 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材 - Google Patents
電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材 Download PDFInfo
- Publication number
- JP6823799B2 JP6823799B2 JP2016178563A JP2016178563A JP6823799B2 JP 6823799 B2 JP6823799 B2 JP 6823799B2 JP 2016178563 A JP2016178563 A JP 2016178563A JP 2016178563 A JP2016178563 A JP 2016178563A JP 6823799 B2 JP6823799 B2 JP 6823799B2
- Authority
- JP
- Japan
- Prior art keywords
- coating layer
- atomic
- sputtering target
- target material
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000011247 coating layer Substances 0.000 title claims description 97
- 238000005477 sputtering target Methods 0.000 title claims description 44
- 239000013077 target material Substances 0.000 title claims description 41
- 230000015572 biosynthetic process Effects 0.000 title description 2
- 239000010410 layer Substances 0.000 claims description 46
- 229910052802 copper Inorganic materials 0.000 claims description 35
- 229910052748 manganese Inorganic materials 0.000 claims description 35
- 229910052759 nickel Inorganic materials 0.000 claims description 31
- 229910000838 Al alloy Inorganic materials 0.000 claims description 16
- 239000012535 impurity Substances 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 229910052720 vanadium Inorganic materials 0.000 claims description 9
- 229910052758 niobium Inorganic materials 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 80
- 239000010949 copper Substances 0.000 description 48
- 239000000758 substrate Substances 0.000 description 36
- 230000003647 oxidation Effects 0.000 description 25
- 238000007254 oxidation reaction Methods 0.000 description 25
- 239000000843 powder Substances 0.000 description 24
- 238000005530 etching Methods 0.000 description 21
- 238000000034 method Methods 0.000 description 21
- 238000001039 wet etching Methods 0.000 description 21
- 230000007797 corrosion Effects 0.000 description 20
- 238000005260 corrosion Methods 0.000 description 20
- 229910045601 alloy Inorganic materials 0.000 description 18
- 239000000956 alloy Substances 0.000 description 18
- 239000000203 mixture Substances 0.000 description 18
- 229910052750 molybdenum Inorganic materials 0.000 description 17
- 239000011521 glass Substances 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 239000006104 solid solution Substances 0.000 description 6
- 239000002390 adhesive tape Substances 0.000 description 5
- 239000000470 constituent Substances 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000003981 vehicle Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910001182 Mo alloy Inorganic materials 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000002845 discoloration Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000003796 beauty Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000002706 hydrostatic effect Effects 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 235000014593 oils and fats Nutrition 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229910000938 samarium–cobalt magnet Inorganic materials 0.000 description 2
- 229910001209 Low-carbon steel Inorganic materials 0.000 description 1
- 229910017318 Mo—Ni Inorganic materials 0.000 description 1
- 229910001257 Nb alloy Inorganic materials 0.000 description 1
- 229910018054 Ni-Cu Inorganic materials 0.000 description 1
- 229910003286 Ni-Mn Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910018481 Ni—Cu Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010411 cooking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 238000009689 gas atomisation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
- B32B5/14—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by a layer differing constitutionally or physically in different parts, e.g. denser near its faces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H01B1/023—Alloys based on aluminium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B1/00—Layered products having a non-planar shape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/061—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of metal
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
- B32B2307/202—Conductive
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015195763 | 2015-10-01 | ||
| JP2015195763 | 2015-10-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2017066519A JP2017066519A (ja) | 2017-04-06 |
| JP6823799B2 true JP6823799B2 (ja) | 2021-02-03 |
Family
ID=58491991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016178563A Active JP6823799B2 (ja) | 2015-10-01 | 2016-09-13 | 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6823799B2 (ko) |
| KR (2) | KR20170039582A (ko) |
| CN (1) | CN107039097B (ko) |
| TW (1) | TWI604066B (ko) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7110749B2 (ja) * | 2017-07-05 | 2022-08-02 | 日立金属株式会社 | ＭｏＮｂターゲット材 |
| TWI641001B (zh) * | 2018-01-22 | 2018-11-11 | 國立屏東科技大學 | 薄膜電阻合金 |
| KR102474944B1 (ko) * | 2020-04-08 | 2022-12-06 | 주식회사 큐프럼 머티리얼즈 | 배선막 제조 방법, 배선막 및 이를 포함하는 표시 장치 |
| WO2023145440A1 (ja) * | 2022-01-31 | 2023-08-03 | 株式会社プロテリアル | フィルム配線の製造方法 |
| CN114855131A (zh) * | 2022-05-23 | 2022-08-05 | 安泰天龙(北京)钨钼科技有限公司 | 一种钼合金靶材制备方法、钼合金靶材和应用 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3859119B2 (ja) | 2000-12-22 | 2006-12-20 | 日立金属株式会社 | 電子部品用薄膜配線 |
| CN100530701C (zh) * | 2002-09-30 | 2009-08-19 | 米亚索尔公司 | 薄膜太阳能电池大规模生产的制造装置与方法 |
| JP3649238B2 (ja) * | 2002-10-17 | 2005-05-18 | 旭硝子株式会社 | 積層体、配線付き基体、有機ｅｌ表示素子、有機ｅｌ表示素子の接続端子及びそれらの製造方法 |
| WO2005041290A1 (ja) * | 2003-10-24 | 2005-05-06 | Nikko Materials Co., Ltd. | ニッケル合金スパッタリングターゲット及びニッケル合金薄膜 |
| JP4730662B2 (ja) | 2005-03-02 | 2011-07-20 | 日立金属株式会社 | 薄膜配線層 |
| JP5532767B2 (ja) * | 2009-09-04 | 2014-06-25 | 大同特殊鋼株式会社 | Ｃｕ電極保護膜用ＮｉＣｕ合金ターゲット材 |
| JP6016083B2 (ja) | 2011-08-19 | 2016-10-26 | 日立金属株式会社 | 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材 |
| JP2013133489A (ja) * | 2011-12-26 | 2013-07-08 | Sumitomo Metal Mining Co Ltd | Ｃｕ合金スパッタリングターゲット、この製造方法及び金属薄膜 |
| JP6026261B2 (ja) * | 2012-12-19 | 2016-11-16 | 山陽特殊製鋼株式会社 | Ｃｕ系磁気記録用合金およびスパッタリングターゲット材並びにそれを使用した垂直磁気記録媒体 |
| JP6292466B2 (ja) * | 2013-02-20 | 2018-03-14 | 日立金属株式会社 | 金属薄膜および金属薄膜形成用Ｍｏ合金スパッタリングターゲット材 |
| JP6361957B2 (ja) * | 2013-03-22 | 2018-07-25 | 日立金属株式会社 | 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材 |
| JP6380837B2 (ja) * | 2013-08-21 | 2018-08-29 | 日立金属株式会社 | 被覆層形成用スパッタリングターゲット材およびその製造方法 |
| JP6369750B2 (ja) * | 2013-09-10 | 2018-08-08 | 日立金属株式会社 | 積層配線膜およびその製造方法ならびにＮｉ合金スパッタリングターゲット材 |
-
2016
- 2016-09-13 JP JP2016178563A patent/JP6823799B2/ja active Active
- 2016-09-26 TW TW105130937A patent/TWI604066B/zh active
- 2016-09-28 KR KR1020160124601A patent/KR20170039582A/ko active Application Filing
- 2016-09-29 CN CN201610866976.6A patent/CN107039097B/zh active Active
-
2019
- 2019-01-22 KR KR1020190008075A patent/KR102032085B1/ko active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| JP2017066519A (ja) | 2017-04-06 |
| KR20170039582A (ko) | 2017-04-11 |
| TW201715054A (zh) | 2017-05-01 |
| KR20190010701A (ko) | 2019-01-30 |
| TWI604066B (zh) | 2017-11-01 |
| CN107039097A (zh) | 2017-08-11 |
| CN107039097B (zh) | 2019-04-23 |
| KR102032085B1 (ko) | 2019-10-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6823799B2 (ja) | 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材 | |
| JP6369750B2 (ja) | 積層配線膜およびその製造方法ならびにＮｉ合金スパッタリングターゲット材 | |
| TWI583801B (zh) | A sputtering target for forming a wiring film for an electronic component and a coating layer material | |
| JP6284004B2 (ja) | Ｍｏ合金スパッタリングターゲット材の製造方法およびＭｏ合金スパッタリングターゲット材 | |
| JP6016083B2 (ja) | 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材 | |
| JP5958822B2 (ja) | Ｍｏ合金スパッタリングターゲット材の製造方法およびＭｏ合金スパッタリングターゲット材 | |
| TWI576454B (zh) | Spraying target for forming wiring film and coating layer for electronic parts | |
| JP6292471B2 (ja) | 電子部品用金属薄膜および金属薄膜形成用Ｍｏ合金スパッタリングターゲット材 | |
| JP6380837B2 (ja) | 被覆層形成用スパッタリングターゲット材およびその製造方法 | |
| JP6292466B2 (ja) | 金属薄膜および金属薄膜形成用Ｍｏ合金スパッタリングターゲット材 | |
| JP6037208B2 (ja) | 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材 | |
| CN103227195B (zh) | 电子部件用层叠布线膜 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190809 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200608 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200925 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200930 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20201210 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20201223 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6823799 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |