JP6822783B2 - 有向ビーム信号分析を使用した粒子サイズの適応走査 - Google Patents

有向ビーム信号分析を使用した粒子サイズの適応走査 Download PDF

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JP6822783B2
JP6822783B2 JP2016091417A JP2016091417A JP6822783B2 JP 6822783 B2 JP6822783 B2 JP 6822783B2 JP 2016091417 A JP2016091417 A JP 2016091417A JP 2016091417 A JP2016091417 A JP 2016091417A JP 6822783 B2 JP6822783 B2 JP 6822783B2
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localized
charged particle
edge
particle beam
feature portion
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Japanese (ja)
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JP2016213189A5 (https=
JP2016213189A (ja
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コーネリス・サンデル・クイマン
ヤコブ・サイモン・フェイバー
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エフ・イ−・アイ・カンパニー
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261—Details
    • H01J37/265—Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H01J37/1474—Scanning means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/29—Reflection microscopes
    • H01J37/292—Reflection microscopes using scanning ray
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1504—Associated circuits

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
JP2016091417A 2015-05-03 2016-04-28 有向ビーム信号分析を使用した粒子サイズの適応走査 Active JP6822783B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/702,753 US9502211B1 (en) 2015-05-03 2015-05-03 Adaptive scanning for particle size using directed beam signal analysis
US14/702,753 2015-05-03

Publications (3)

Publication Number Publication Date
JP2016213189A JP2016213189A (ja) 2016-12-15
JP2016213189A5 JP2016213189A5 (https=) 2019-04-25
JP6822783B2 true JP6822783B2 (ja) 2021-01-27

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JP2016091417A Active JP6822783B2 (ja) 2015-05-03 2016-04-28 有向ビーム信号分析を使用した粒子サイズの適応走査

Country Status (3)

Country Link
US (1) US9502211B1 (https=)
JP (1) JP6822783B2 (https=)
CN (1) CN106098518B (https=)

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US10984980B2 (en) * 2016-01-29 2021-04-20 Hitachi High-Tech Corporation Charged particle beam device for imaging vias inside trenches
US9881765B2 (en) * 2016-04-20 2018-01-30 Applied Materials Israel Ltd. Method and system for scanning an object
US9983152B1 (en) 2016-11-17 2018-05-29 Fei Company Material characterization using ion channeling imaging
US10838191B2 (en) * 2016-12-21 2020-11-17 Carl Zeiss Microscopy Gmbh Method of operating a microscope
EP3531439B1 (en) * 2018-02-22 2020-06-24 FEI Company Intelligent pre-scan in scanning transmission charged particle microscopy
DE102019210452A1 (de) * 2019-07-16 2021-01-21 Carl Zeiss Microscopy Gmbh Verfahren und Vorrichtung zum Erfassen von Volumeninformationen dreidimensionaler Proben
KR102845787B1 (ko) * 2020-06-18 2025-08-13 주식회사 히타치하이테크 하전 입자선 장치
DE102020122535B4 (de) * 2020-08-28 2022-08-11 Carl Zeiss Microscopy Gmbh Verfahren zum Betrieb eines Strahlgeräts, Computerprogrammprodukt und Strahlgerät zum Durchführen des Verfahrens
GB2598780B (en) * 2020-09-14 2022-10-12 Thermo Fisher Scient Ecublens Sarl Systems and methods for performing laser-induced breakdown spectroscopy
CN116930232A (zh) * 2022-03-31 2023-10-24 Fei 公司 用于分析三维特征部的方法及系统
TW202536913A (zh) * 2023-11-06 2025-09-16 荷蘭商Ａｓｍｌ荷蘭公司 設計感知動態像素大小以提高掃描電子顯微鏡檢測及度量衡產出量
US20250216347A1 (en) * 2024-01-02 2025-07-03 Applied Materials Israel Ltd. Nondestructive estimation of structural properties of a specimen via x-ray modelling based on simulations and ground truth measurements
US20250231132A1 (en) * 2024-01-16 2025-07-17 Applied Materials Israel Ltd. Nondestructive estimation of structural properties of a specimen via x-ray modelling based on ground truth measurements
CN119603552B (zh) * 2024-12-18 2025-09-16 中国科学院合肥物质科学研究院 面向计数框计数的浮游植物快速扫描显微高清成像方法

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US6879719B1 (en) 2000-02-24 2005-04-12 International Business Machines Corporation Method for measurement of full-two dimensional submicron shapes
JP3971937B2 (ja) * 2002-02-18 2007-09-05 株式会社日立ハイテクノロジーズ 露光条件監視方法およびその装置並びに半導体デバイスの製造方法
JP2004207032A (ja) 2002-12-25 2004-07-22 Toshiba Corp 荷電ビーム装置、荷電ビーム照射方法、および半導体装置の製造方法
JP3749241B2 (ja) 2003-10-08 2006-02-22 株式会社東芝 荷電ビーム照射方法、半導体装置の製造方法および荷電ビーム照射装置
US7425703B2 (en) * 2004-02-20 2008-09-16 Ebara Corporation Electron beam apparatus, a device manufacturing method using the same apparatus, a pattern evaluation method, a device manufacturing method using the same method, and a resist pattern or processed wafer evaluation method
KR100689673B1 (ko) * 2004-05-10 2007-03-09 주식회사 하이닉스반도체 반도체소자의 불균일 이온주입 방법
JP5156619B2 (ja) 2006-02-17 2013-03-06 株式会社日立ハイテクノロジーズ 試料寸法検査・測定方法、及び試料寸法検査・測定装置
US8250667B2 (en) 2007-11-30 2012-08-21 Nanofactory Instruments Ab Iterative feedback tuning in a scanning probe microscope
JP5474174B2 (ja) * 2010-02-22 2014-04-16 株式会社日立ハイテクノロジーズ 回路パターン検査装置
EP2461347A1 (en) * 2010-12-06 2012-06-06 Fei Company Detector system for transmission electron microscope
US8389962B2 (en) 2011-05-31 2013-03-05 Applied Materials Israel, Ltd. System and method for compensating for magnetic noise
EP2557584A1 (en) 2011-08-10 2013-02-13 Fei Company Charged-particle microscopy imaging method
JP5677236B2 (ja) * 2011-08-22 2015-02-25 株式会社日立ハイテクノロジーズ 荷電粒子線装置
US9041793B2 (en) * 2012-05-17 2015-05-26 Fei Company Scanning microscope having an adaptive scan
EP2924710A1 (en) 2014-03-25 2015-09-30 Fei Company Imaging a sample with multiple beams and a single detector
EP2924708A1 (en) 2014-03-25 2015-09-30 Fei Company Imaging a sample with multiple beams and multiple detectors

Also Published As

Publication number Publication date
CN106098518A (zh) 2016-11-09
CN106098518B (zh) 2020-01-10
US9502211B1 (en) 2016-11-22
US20160322194A1 (en) 2016-11-03
JP2016213189A (ja) 2016-12-15

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