JP6822114B2 - 表示装置、トランジスタ回路及び薄膜トランジスタの駆動方法 - Google Patents
表示装置、トランジスタ回路及び薄膜トランジスタの駆動方法 Download PDFInfo
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- JP6822114B2 JP6822114B2 JP2016241604A JP2016241604A JP6822114B2 JP 6822114 B2 JP6822114 B2 JP 6822114B2 JP 2016241604 A JP2016241604 A JP 2016241604A JP 2016241604 A JP2016241604 A JP 2016241604A JP 6822114 B2 JP6822114 B2 JP 6822114B2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
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- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
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- G—PHYSICS
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- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
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- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
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- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
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- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
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- G—PHYSICS
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- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
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- G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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- H10D30/67—Thin-film transistors [TFT]
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10D30/6756—Amorphous oxide semiconductors
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- Physics & Mathematics (AREA)
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016241604A JP6822114B2 (ja) | 2016-12-13 | 2016-12-13 | 表示装置、トランジスタ回路及び薄膜トランジスタの駆動方法 |
| CN201711190146.7A CN108231904B (zh) | 2016-12-13 | 2017-11-24 | 薄膜晶体管及其驱动方法、显示装置和晶体管电路 |
| US15/828,586 US10388798B2 (en) | 2016-12-13 | 2017-12-01 | Thin film transistor, display device, transistor circuit, and driving method of thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016241604A JP6822114B2 (ja) | 2016-12-13 | 2016-12-13 | 表示装置、トランジスタ回路及び薄膜トランジスタの駆動方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018098364A JP2018098364A (ja) | 2018-06-21 |
| JP2018098364A5 JP2018098364A5 (enExample) | 2020-03-05 |
| JP6822114B2 true JP6822114B2 (ja) | 2021-01-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016241604A Active JP6822114B2 (ja) | 2016-12-13 | 2016-12-13 | 表示装置、トランジスタ回路及び薄膜トランジスタの駆動方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US10388798B2 (enExample) |
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Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102420080B1 (ko) * | 2017-05-19 | 2022-07-13 | 삼성디스플레이 주식회사 | 다채널 박막 트랜지스터 및 이를 포함하는 화소 |
| JP6844845B2 (ja) | 2017-05-31 | 2021-03-17 | 三国電子有限会社 | 表示装置 |
| KR102699490B1 (ko) * | 2018-06-22 | 2024-08-27 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| JP7190729B2 (ja) | 2018-08-31 | 2022-12-16 | 三国電子有限会社 | キャリア注入量制御電極を有する有機エレクトロルミネセンス素子 |
| WO2020059027A1 (ja) * | 2018-09-18 | 2020-03-26 | シャープ株式会社 | 表示装置 |
| JP7246681B2 (ja) | 2018-09-26 | 2023-03-28 | 三国電子有限会社 | トランジスタ及びトランジスタの製造方法、並びにトランジスタを含む表示装置 |
| CN111092093B (zh) * | 2018-10-08 | 2025-02-25 | Tcl科技集团股份有限公司 | a-Si TFT器件驱动的主动背光LED光源板及背光模组 |
| WO2020161775A1 (ja) * | 2019-02-04 | 2020-08-13 | シャープ株式会社 | 表示装置 |
| JP7190740B2 (ja) | 2019-02-22 | 2022-12-16 | 三国電子有限会社 | エレクトロルミネセンス素子を有する表示装置 |
| TWI691762B (zh) * | 2019-04-18 | 2020-04-21 | 友達光電股份有限公司 | 畫素結構 |
| KR102837643B1 (ko) * | 2019-06-14 | 2025-07-24 | 삼성디스플레이 주식회사 | 게이트 구동부 및 이를 포함하는 표시 장치 |
| KR102651064B1 (ko) * | 2019-07-30 | 2024-03-25 | 삼성디스플레이 주식회사 | 표시 장치 |
| US11121263B2 (en) * | 2019-08-27 | 2021-09-14 | Apple Inc. | Hydrogen trap layer for display device and the same |
| US11915647B2 (en) * | 2019-10-02 | 2024-02-27 | Shar Kabushiki Kaisha | Display device equipped with current-driven electro-optical elements |
| CN110993620A (zh) * | 2019-12-05 | 2020-04-10 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板及其制备方法、显示面板 |
| JP7444436B2 (ja) | 2020-02-05 | 2024-03-06 | 三国電子有限会社 | 液晶表示装置 |
| KR102825010B1 (ko) * | 2020-09-25 | 2025-06-27 | 삼성디스플레이 주식회사 | 게이트 구동 회로 및 이를 포함하는 표시 장치 |
| CN112289854B (zh) * | 2020-10-22 | 2021-09-24 | 深圳市华星光电半导体显示技术有限公司 | 一种阵列基板及其制备方法 |
| CN112530978B (zh) * | 2020-12-01 | 2024-02-13 | 京东方科技集团股份有限公司 | 开关器件结构及其制备方法、薄膜晶体管膜层、显示面板 |
| CN112490275B (zh) * | 2020-12-03 | 2023-04-21 | 湖北长江新型显示产业创新中心有限公司 | 显示面板及其制作方法、显示装置 |
| KR102850343B1 (ko) * | 2021-02-03 | 2025-08-28 | 삼성디스플레이 주식회사 | 트랜지스터 및 이를 포함하는 표시 장치 |
| KR102864989B1 (ko) * | 2021-10-12 | 2025-09-25 | 엘지디스플레이 주식회사 | 박막 트랜지스터 및 이를 포함하는 표시장치 |
| CN117643202A (zh) * | 2022-06-23 | 2024-03-01 | 京东方科技集团股份有限公司 | 显示基板和显示装置 |
| TWI802478B (zh) * | 2022-07-27 | 2023-05-11 | 友達光電股份有限公司 | 主動元件基板 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4257971B2 (ja) * | 2003-03-27 | 2009-04-30 | 独立行政法人産業技術総合研究所 | 二重ゲート電界効果トランジスタのゲート信号印加方法 |
| JP2007173741A (ja) * | 2005-12-26 | 2007-07-05 | Sharp Corp | P型薄膜トランジスタ、n型薄膜トランジスタ及び半導体装置 |
| JP4748456B2 (ja) * | 2006-09-26 | 2011-08-17 | カシオ計算機株式会社 | 画素駆動回路及び画像表示装置 |
| JP2009133914A (ja) * | 2007-11-28 | 2009-06-18 | Sony Corp | 表示装置 |
| US8586979B2 (en) * | 2008-02-01 | 2013-11-19 | Samsung Electronics Co., Ltd. | Oxide semiconductor transistor and method of manufacturing the same |
| US8681307B2 (en) * | 2008-12-19 | 2014-03-25 | Sharp Kabushiki Kaisha | Insulated gate transistor, active matrix substrate, liquid crystal display device, and method for producing the same |
| WO2011048923A1 (en) * | 2009-10-21 | 2011-04-28 | Semiconductor Energy Laboratory Co., Ltd. | E-book reader |
| KR101108176B1 (ko) * | 2010-07-07 | 2012-01-31 | 삼성모바일디스플레이주식회사 | 더블 게이트형 박막 트랜지스터 및 이를 구비한 유기 발광 표시 장치 |
| KR101928897B1 (ko) * | 2010-08-27 | 2018-12-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 기억 장치, 반도체 장치 |
| US20120298999A1 (en) * | 2011-05-24 | 2012-11-29 | Sharp Kabushiki Kaisha | Semiconductor device and manufacturing method thereof |
| KR102044667B1 (ko) * | 2013-05-28 | 2019-11-14 | 엘지디스플레이 주식회사 | 산화물 박막 트랜지스터를 구비한 평판표시장치 및 그의 제조방법 |
| KR20150061302A (ko) * | 2013-11-27 | 2015-06-04 | 삼성디스플레이 주식회사 | 표시 기판, 표시 기판의 제조 방법 및 표시 기판을 포함하는 표시 장치 |
| JP6350984B2 (ja) * | 2014-04-24 | 2018-07-04 | Tianma Japan株式会社 | 薄膜トランジスタ及び表示装置 |
| JP6459271B2 (ja) * | 2014-07-23 | 2019-01-30 | Tianma Japan株式会社 | イメージセンサ及びその駆動方法 |
| CN106298883B (zh) * | 2015-06-04 | 2020-09-15 | 昆山工研院新型平板显示技术中心有限公司 | 一种薄膜晶体管及其制备方法 |
| US10439069B2 (en) * | 2015-08-10 | 2019-10-08 | Nlt Technologies, Ltd. | Optical sensor element and photoelectric conversion device |
-
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| US10388798B2 (en) | 2019-08-20 |
| JP2018098364A (ja) | 2018-06-21 |
| CN108231904A (zh) | 2018-06-29 |
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