JP6821759B2 - 表示装置 - Google Patents
表示装置 Download PDFInfo
- Publication number
- JP6821759B2 JP6821759B2 JP2019152483A JP2019152483A JP6821759B2 JP 6821759 B2 JP6821759 B2 JP 6821759B2 JP 2019152483 A JP2019152483 A JP 2019152483A JP 2019152483 A JP2019152483 A JP 2019152483A JP 6821759 B2 JP6821759 B2 JP 6821759B2
- Authority
- JP
- Japan
- Prior art keywords
- sub
- electrode
- pixel
- light emitting
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims description 41
- 239000010409 thin film Substances 0.000 claims description 31
- 239000010410 layer Substances 0.000 description 193
- 239000010408 film Substances 0.000 description 80
- 238000000034 method Methods 0.000 description 28
- 239000011777 magnesium Substances 0.000 description 20
- 239000004020 conductor Substances 0.000 description 19
- 229910001316 Ag alloy Inorganic materials 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 16
- 239000010936 titanium Substances 0.000 description 16
- 230000005540 biological transmission Effects 0.000 description 15
- 238000007789 sealing Methods 0.000 description 15
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 14
- 229910052709 silver Inorganic materials 0.000 description 14
- 239000004332 silver Substances 0.000 description 14
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 12
- 239000010949 copper Substances 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 230000002441 reversible effect Effects 0.000 description 9
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 8
- 238000001704 evaporation Methods 0.000 description 8
- 229910052749 magnesium Inorganic materials 0.000 description 8
- 239000007769 metal material Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000008020 evaporation Effects 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000003086 colorant Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 4
- 229910000861 Mg alloy Inorganic materials 0.000 description 4
- 230000003190 augmentative effect Effects 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- -1 hafnium nitride Chemical class 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 239000005011 phenolic resin Substances 0.000 description 4
- 229920001568 phenolic resin Polymers 0.000 description 4
- 229920006122 polyamide resin Polymers 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 239000009719 polyimide resin Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- 101100257420 Arabidopsis thaliana SPA3 gene Proteins 0.000 description 3
- 101000836906 Homo sapiens Signal-induced proliferation-associated protein 1 Proteins 0.000 description 3
- 102100027163 Signal-induced proliferation-associated protein 1 Human genes 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 101001045744 Sus scrofa Hepatocyte nuclear factor 1-beta Proteins 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/01—Head-up displays
- G02B27/017—Head mounted
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
- H10K59/352—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels the areas of the RGB subpixels being different
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/01—Head-up displays
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/01—Head-up displays
- G02B27/017—Head mounted
- G02B27/0172—Head mounted characterised by optical features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/32—Stacked devices having two or more layers, each emitting at different wavelengths
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80515—Anodes characterised by their shape
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Optical Filters (AREA)
Description
11 右眼用表示装置
12 左眼用表示装置
13 レンズアレイ
14 透過反射部
14a 反射面
15 透過窓
20a 左眼接眼レンズ
20b 右眼接眼レンズ
30 ヘッド装着バンド
100 表示装置
110 表示パネル
111 第1基板
112 第2基板
140 ソースドライブIC
150 軟性フィルム
160 回路基板
170 タイミング制御部
200 回路素子層
300,310,320,330 第1電極
340,350,360 補助電極
370 バンク
380 逆テーパー構造物
400,410,420,430 第1発光層
500,510,520,530 第2電極
600 第2発光層
700 第3電極
800 封止層
900 カラーフィルタ
Claims (22)
- 第1サブ画素及び第2サブ画素を備えた基板、
前記基板上で前記第1サブ画素及び前記第2サブ画素のそれぞれに備えられた第1電極、
前記第1電極上で前記第1サブ画素及び前記第2サブ画素のそれぞれに備えられ、第1色の光を発する第1発光層、
前記第1発光層上で前記第1サブ画素及び前記第2サブ画素のそれぞれに備えられた第2電極、
前記第2電極上に備えられ、第2色の光を発する第2発光層、及び
前記第2発光層上に備えられた第3電極を含み、
前記第1サブ画素の第1電極が、前記第2サブ画素の第1電極よりも大きな面積を有して、
前記第1サブ画素の第1電極は、前記第1サブ画素の第2電極と電気的に接続し、前記第2サブ画素の第1電極は、前記第2サブ画素の第2電極と絶縁され、
前記第1発光層が、前記第1サブ画素と前記第2サブ画素のそれぞれにパターン形成され、
前記第1サブ画素が、前記第1発光層が前記第1サブ画素の前記第1電極よりも小さい面積を有するように形成され、前記第1サブ画素の前記第1電極が露出し、
前記第2サブ画素は、前記第1発光層が前記第2サブ画素の前記第1電極よりも大きな面積を有するように形成され、前記第2サブ画素の前記第1電極を覆う表示装置。 - 前記第2サブ画素の第2電極が、前記第3電極と電気的に接続する請求項1に記載の表示装置。
- 前記第1サブ画素は前記第2発光層が発光し、前記第2サブ画素は前記第1発光層が発光する請求項1に記載の表示装置。
- 前記第1発光層が、青色光を発する請求項3に記載の表示装置。
- 前記第2電極が、前記第1サブ画素と前記第2サブ画素のそれぞれにパターン形成される請求項1に記載の表示装置。
- 前記第1サブ画素が、前記第2電極が前記第1発光層よりも大きな面積を有するように形成され、前記露出した第1電極と前記第2電極が接触する請求項5に記載の表示装置。
- 前記第1電極の下で、前記第1サブ画素及び前記第2サブ画素のそれぞれに備えられた補助電極、及び
前記基板と前記補助電極の間に備えられた薄膜トランジスタを含み、
前記補助電極が、前記薄膜トランジスタに接続して高電位電圧が印加される請求項1に記載の表示装置。 - 前記第1電極が、前記補助電極に接続して、前記高電位電圧が印加される請求項7に記載の表示装置。
- 前記補助電極の端を覆って前記補助電極の一部が露出するように形成されたバンクをさらに含み、
前記第1サブ画素の第1電極が、前記露出した補助電極の上面及び前記バンクの側面に形成される請求項7に記載の表示装置。 - 前記第1サブ画素の第1電極が、前記バンク上で前記第1サブ画素の第2電極と接触する請求項9に記載の表示装置。
- 前記基板が、前記第1サブ画素が第1方向に複数個が羅列した第1サブ画素領域、及び前記第2サブ画素が第2方向に前記第1サブ画素と隣接するように配置され、前記第1方向に複数個が羅列した第2サブ画素領域を含む請求項1に記載の表示装置。
- 前記第1サブ画素領域に配置された第2電極と前記第2サブ画素領域に配置された第2電極が、互いに離隔している請求項11に記載の表示装置。
- 前記第1サブ画素領域に配置された第2電極が、前記複数の第1サブ画素のそれぞれにパターン形成される請求項12に記載の表示装置。
- 前記第2サブ画素領域に配置された第2電極が、前記複数の第2サブ画素に沿って延長され、一端が前記第3電極と接触する請求項12に記載の表示装置。
- 前記基板は、更に第3サブ画素を備え、
前記第3サブ画素には、前記第1電極、前記第1発光層、前記第2電極、前記第2発光層及び前記第3電極が備えられ、
前記第1サブ画素及び前記第3サブ画素のそれぞれでは、前記第1電極と前記第2電極に同じ電圧が印加され、
前記第2サブ画素では、前記第2電極と前記第3電極に同じ電圧が印加される請求項1に記載の表示装置。 - 前記第1サブ画素及び前記第3サブ画素のそれぞれが、前記第2電極と前記第3電極の間に備えられた第2発光層が発光し、
前記第2サブ画素は、前記第1電極と前記第2電極の間に備えられた第1発光層が発光する請求項15に記載の表示装置。 - 前記第3サブ画素の第1電極が、前記第2サブ画素の第1電極よりも大きな面積を有する請求項15に記載の表示装置。
- 前記第3サブ画素が、前記第1発光層が、前記第3サブ画素の前記第1電極よりも小さい面積を有するように形成されて前記第3サブ画素の前記第1電極が露出する請求項15に記載の表示装置。
- 前記第2電極が、前記第1サブ画素、前記第2サブ画素及び前記第3サブ画素のそれぞれにパターン形成される請求項18に記載の表示装置。
- 前記第1サブ画素及び前記第3サブ画素のそれぞれが、前記第2電極が前記第1発光層よりも大きな面積を有するように形成され、前記露出した第1電極と前記第2電極が接触する請求項19に記載の表示装置。
- 前記第1サブ画素及び前記第3サブ画素のそれぞれに対応するように配置されたカラーフィルタをさらに含む請求項15に記載の表示装置。
- 前記カラーフィルタが、
前記第1サブ画素に対応するように配置され、赤色光を透過させる赤色カラーフィルタ、及び
前記第3サブ画素に対応するように配置され、緑色光を透過させる緑色カラーフィルタを含む請求項21に記載の表示装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2018-0149927 | 2018-11-28 | ||
KR1020180149927A KR102619291B1 (ko) | 2018-11-28 | 2018-11-28 | 표시장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020087911A JP2020087911A (ja) | 2020-06-04 |
JP6821759B2 true JP6821759B2 (ja) | 2021-01-27 |
Family
ID=70771200
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019152483A Active JP6821759B2 (ja) | 2018-11-28 | 2019-08-23 | 表示装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11114467B2 (ja) |
JP (1) | JP6821759B2 (ja) |
KR (1) | KR102619291B1 (ja) |
CN (1) | CN111244130B (ja) |
TW (1) | TWI703724B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210065239A (ko) * | 2019-11-26 | 2021-06-04 | 삼성디스플레이 주식회사 | 표시 장치 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100478274B1 (ko) * | 2002-11-04 | 2005-03-25 | 한성엘컴텍 주식회사 | 노이즈 감소용 전극층을 구비한 이엘소자 |
JP2005222928A (ja) | 2004-01-07 | 2005-08-18 | Seiko Epson Corp | 電気光学装置 |
JP2010003629A (ja) | 2008-06-23 | 2010-01-07 | Canon Inc | 有機el表示装置の製造方法 |
JP2010010041A (ja) * | 2008-06-30 | 2010-01-14 | Canon Inc | 有機el表示装置の製造方法 |
JP2010033983A (ja) * | 2008-07-31 | 2010-02-12 | Canon Inc | 有機el表示装置及びその製造方法 |
KR101023133B1 (ko) | 2009-03-19 | 2011-03-18 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 |
JP6391401B2 (ja) * | 2014-10-03 | 2018-09-19 | 株式会社ジャパンディスプレイ | 画像表示装置 |
CN204257650U (zh) * | 2014-12-30 | 2015-04-08 | 京东方科技集团股份有限公司 | 显示基板、显示面板和掩膜板 |
JP6550967B2 (ja) * | 2015-06-30 | 2019-07-31 | セイコーエプソン株式会社 | 有機el装置、有機el装置の製造方法、及び電子機器 |
JP6588299B2 (ja) | 2015-10-21 | 2019-10-09 | 株式会社ジャパンディスプレイ | 表示装置 |
KR102470377B1 (ko) | 2015-12-31 | 2022-11-23 | 엘지디스플레이 주식회사 | 개인 몰입형 기기의 표시장치 |
JP6686497B2 (ja) * | 2016-02-12 | 2020-04-22 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
KR101796501B1 (ko) * | 2016-04-29 | 2017-12-04 | 엘지디스플레이 주식회사 | 개인 몰입형 장치의 표시장치 |
KR102521254B1 (ko) * | 2016-06-01 | 2023-04-17 | 삼성디스플레이 주식회사 | 표시 패널 및 이의 제조 방법 |
US20170352709A1 (en) | 2016-06-03 | 2017-12-07 | Universal Display Corporation | Architecture for very high resolution amoled display |
US10818652B2 (en) | 2016-07-15 | 2020-10-27 | Samsung Display Co., Ltd. | Display device and manufacturing method thereof |
KR102626690B1 (ko) * | 2016-09-30 | 2024-01-17 | 엘지디스플레이 주식회사 | 표시장치, 그의 제조방법, 및 그를 포함한 헤드 장착형 디스플레이 |
KR20180055024A (ko) | 2016-11-15 | 2018-05-25 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
JP7059574B2 (ja) * | 2017-02-01 | 2022-04-26 | セイコーエプソン株式会社 | 電気光学装置、電子機器、ヘッドマウントディスプレイ |
CN108376528B (zh) * | 2017-02-01 | 2022-12-27 | 精工爱普生株式会社 | 电光装置、电子设备及头戴显示器 |
-
2018
- 2018-11-28 KR KR1020180149927A patent/KR102619291B1/ko active IP Right Grant
-
2019
- 2019-08-07 CN CN201910725334.8A patent/CN111244130B/zh active Active
- 2019-08-14 TW TW108128907A patent/TWI703724B/zh active
- 2019-08-20 US US16/545,581 patent/US11114467B2/en active Active
- 2019-08-23 JP JP2019152483A patent/JP6821759B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
KR102619291B1 (ko) | 2023-12-28 |
CN111244130A (zh) | 2020-06-05 |
TWI703724B (zh) | 2020-09-01 |
TW202021116A (zh) | 2020-06-01 |
US11114467B2 (en) | 2021-09-07 |
KR20200063782A (ko) | 2020-06-05 |
US20200168637A1 (en) | 2020-05-28 |
CN111244130B (zh) | 2023-11-24 |
JP2020087911A (ja) | 2020-06-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108269833B (zh) | 有机发光显示装置 | |
US11522028B2 (en) | Display device having a trench provided between first subpixel and second subpixel and method for manufacturing the same | |
JP6595444B2 (ja) | 表示装置 | |
JP6612305B2 (ja) | 発光表示装置とその製造方法 | |
EP3193322B1 (en) | Display device | |
KR102626690B1 (ko) | 표시장치, 그의 제조방법, 및 그를 포함한 헤드 장착형 디스플레이 | |
JP6605441B2 (ja) | 表示装置及びその製造方法 | |
JP6862529B2 (ja) | 表示装置 | |
JP6995581B2 (ja) | 発光表示装置及びその製造方法 | |
US20240164135A1 (en) | Display device and method for manufacturing the same | |
US10763309B2 (en) | Display device | |
JP6990680B2 (ja) | 表示装置 | |
KR102630000B1 (ko) | 표시장치 | |
KR20210086287A (ko) | 표시장치 | |
JP6821759B2 (ja) | 表示装置 | |
KR102622791B1 (ko) | 표시장치 | |
KR102622790B1 (ko) | 표시장치 | |
GB2588295A (en) | Display device and method for manufacturing the same | |
KR20210084877A (ko) | 표시장치 | |
KR20210053654A (ko) | 표시장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190826 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200911 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200923 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20201209 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20201222 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210106 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6821759 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |